Lab no. 4: Device characteristics of a pMOS transistor in Virtuoso
Objective: The purpose of this lab is to understand the operation and characteristics of pMOS devices in Cadence Virtuoso.
Procedure: The student designs a pMOS transistor circuit in Virtuoso, simulates it, and analyzes the transfer characteristics (IDS-VGS), output characteristics (IDS-VDS), threshold voltage (Vth), transconductance (gm), and channel resistance (RON) as functions of gate voltage.
Conclusion: Through this lab, the student learns about the characteristics of pMOS transistors, including threshold voltage, different regions of operation, transconductance, and channel resistance. Analysis is performed
Lab no. 4: Device characteristics of a pMOS transistor in Virtuoso
Objective: The purpose of this lab is to understand the operation and characteristics of pMOS devices in Cadence Virtuoso.
Procedure: The student designs a pMOS transistor circuit in Virtuoso, simulates it, and analyzes the transfer characteristics (IDS-VGS), output characteristics (IDS-VDS), threshold voltage (Vth), transconductance (gm), and channel resistance (RON) as functions of gate voltage.
Conclusion: Through this lab, the student learns about the characteristics of pMOS transistors, including threshold voltage, different regions of operation, transconductance, and channel resistance. Analysis is performed
Original Description:
Designing a P-MOS transistor using Cadence Virtuoso
Lab no. 4: Device characteristics of a pMOS transistor in Virtuoso
Objective: The purpose of this lab is to understand the operation and characteristics of pMOS devices in Cadence Virtuoso.
Procedure: The student designs a pMOS transistor circuit in Virtuoso, simulates it, and analyzes the transfer characteristics (IDS-VGS), output characteristics (IDS-VDS), threshold voltage (Vth), transconductance (gm), and channel resistance (RON) as functions of gate voltage.
Conclusion: Through this lab, the student learns about the characteristics of pMOS transistors, including threshold voltage, different regions of operation, transconductance, and channel resistance. Analysis is performed
Lab no. 4: Device characteristics of a pMOS transistor in Virtuoso
Objective: The purpose of this lab is to understand the operation and characteristics of pMOS devices in Cadence Virtuoso.
Procedure: The student designs a pMOS transistor circuit in Virtuoso, simulates it, and analyzes the transfer characteristics (IDS-VGS), output characteristics (IDS-VDS), threshold voltage (Vth), transconductance (gm), and channel resistance (RON) as functions of gate voltage.
Conclusion: Through this lab, the student learns about the characteristics of pMOS transistors, including threshold voltage, different regions of operation, transconductance, and channel resistance. Analysis is performed
Lab Title: Designing a P-MOS transistor using Cadence Virtuoso
Student Name: Abdul Mohsin Reg. No: 200773
Objective: To create the schematic and analyze pMOS transistor in Cadence Virtuoso
LAB ASSESSMENT:
Excellent Good Average Satisfactory Unsatisfactory
Attributes (5) (4) (3) (2) (1)
Ability to perform Experiment without supervision
Ability to general understanding of software
Ability to assimilate the
results
Total Marks: Obtained Marks:
LAB REPORT ASSESSMENT:
Excellent Good Average Satisfactory Unsatisfactory
Attributes (5) (4) (3) (2) (1)
Data presentation
Experimental results
Conclusion
Total Marks: Obtained Marks:
Date: Signature: Lab no. 4: Device characteristics of a pMOS transistor in Virtuoso Objective: The purpose of this lab is to understand the operation and the electronic characteristics of pMOS devices. Here, you must study the following for a MOSFET device in Cadence-Vituoso. 1. Transfer characteristics, IDS - VGS. a. Identify the threshold region 2. Output characteristics, IDS - VDS, of MOSFET. a. Identify different regions of operation. i. Which region could be utilized as a current source, and what are the nonidealities and challenges? b. Identify deep triode region and study RON as a function of VGS. What could be the potential application of this region? 3. Compute transconductance, gm, as a function of the overdrive VGS – Vth
Parameters. Inputs: VDS: -3V, VGS: -1.5V, Outputs: I vs Vgs, I vs. Vds, Ron, gm Procedure: Repeat the steps of Lab 03. Attach body to maximum positive voltage.
Implementation:
Pmos Circuit: Results & Discussion: 1)Transfer characteristics, IDS - VGS. a. Identify the threshold region.
For Vgs: Vth Value = -0.44064
Show Vth value in graph:
Vth And Over drive Graph:
Over drive = vgs – vth
= -1.5 – (-0.44064)
= -1.5 +0.44064
= -1.0593
Discussion: From starting point to M1 Pmos are in linear and point between M1 and M0 is saturation and after these point that are in cutoff. 2. Output characteristics, IDS - VDS, of MOSFET. a. Identify different regions of operation. i. Which region could be utilized as a current source, and what are the nonidealities and challenges?
For Vds: Go to choose analysis select dc analysis and the select design variable after this we choose Vds and put sweep range value starting is -3 and stop is 0. Then sweep type is linear and put number of steps is 10. And then ok.
Graph of Vds:
I put the value of sweep range value starting is -1.5 and stop is 0. Then sweep type is linear and put number of steps is 10. To remove the curve I discuss this in class And then ok. Go to parametric analysis: Here we can find over drive voltage value and each graph have different. These three different we find by Overdrive formula and the formula is OV=Vgs-Vth. The value of Vth is given in graph we put in this formula and then we find overdrive value for this.
b. Identify deep triode region and study RON as a function of VGS. What could be the potential application of this region? Ron Graph:
From starting it will be on cutoff region after om Vgs -25 they are in saturation and then it will be on linear region. This is how we find region of Ron. 3. Compute transconductance, gm, as a function of the overdrive VGS – Vth
Graph: Conclusion: In this lab we learn about Designing a P-MOS transistor using Cadence Virtuoso. To create the schematic and analyze pMOS transistor in Cadence Virtuoso. we perform different task in this lab like we Transfer characteristics, IDS - VGS. And Identify the threshold region and then we find Output characteristics, IDS - VDS, of MOSFET. The Aim if this lab is to understand the characteristics of Pmos.in this lab we find Ron value and we tell there regions and also find Vth ,over drive voltage and gm. and this lab we study the characteristics of pmos.and also take output from waveforms.
This Operation Manual Is Intended For Users With Basic Knowledge of Electricity and Electric Devices. LSLV-M100 Is The Official Name For The M100 Series Inverters
This Operation Manual Is Intended For Users With Basic Knowledge of Electricity and Electric Devices. LSLV-M100 Is The Official Name For The M100 Series Inverters
