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OXFORD PUBLIC SCHOOL, BAM SOLID AND SEMICONDUCTOR

Multiple Choice Questions: [1Mark] 10. Let nh and ne be the number of holes and
1. The type of bonding in a Germanium crystal is: conduction electrons in an intrinsic
(a) Ionic (b) Metallic semiconductor. Then:
(c) Covalent (d) Vander waal’s (a) nh = ne (b) nh< ne
2. In an intrinsic semiconductor, the forbidden
energy gap between valence band and a (c) nh> ne (d) nh ≠ ne
conduction band is of the order of: 11. An n-type semiconductor is:
(a) 1 ev (b) 4 ev (c) 1 kev (d) 1 Mev (a) Negatively charged (b) Positively charged
3. The forbidden energy gap in conductors, (c) Uncharged (d) Its charge
semiconductors and insulations are Δ1, Δ2 and Δ3 increases with increase in temperature
respectively. The relations among them is: 12. When pure silicon is doped with trivalent
(a) Δ1 = Δ2 = Δ3 (b) Δ1> Δ2> Δ3 impurity like boron, the conduction is due to:
(c) Δ1< Δ2> Δ3 (d) Δ1< Δ2< Δ3 (a) Electrons (b) Holes
4. The level formed due to impurity atom, in the (c) Protons (d) Positrons
forbidden energy gap, very near to conduction 13. If silicon atom is doped with a donor impurity,
band in n-type semiconductor is called: the donor atoms should be:
(a) Acceptor level (b) Donor level (a) Trivalent (b) Pentavalent
(c) Conduction level (d) Forbidden level (c) Tetravalent (d) None of the above
5. Acceptor level in a p-type semiconductor is: 14. Majority charge carriers in extrinsic
(a) Nearer to valence band semiconductors are:
(b) Nearer to conduction band (a) Holes in n-type and electrons in p-type
(c) At the middle of the gap between conduction (b) Holes both in n-type and p-type
and valence bands (c) Electron in n-type and holes in p-type
(d) None of the above (d) Electrons in both in n-type and p-type
6. In a semiconductor: 15. The depletion layer in a p-n junction is caused
(a) There are no free electrons at OK by:
(b) The number of free electrons increases with (a) Drift of holes
increase in temperature (b) Diffusion of charge carriers
(c) The number of free electrons is less than that (c) Migration of impurity atoms
in a conductor (d) Drift of electrons
(d) All the above 16. In the depletion region of an unbiased p-n
7. The impurity atoms with which pure germanium junction diode, there are:
may be doped with it to form a p-type (a) Only electrons
semiconductor are those of: (b) Only holes
(a) Boron (b) Aluminium (c) Both electrons and holes
(c) Gallium (d) All the above (d) Only fixed ions
8. A semiconductor is doped with an acceptor 17. In a semiconductor diode, p-side is earthed and
impurity. n-side is applied a potential of ‒3v, then the
(a) The hole concentration increases diode is:
(b) The electron concentration decreases (a) Forward biased (b) Reverse biased
(c) Both of the above are correct (c) Unbiased (d) Depletion region widens
(d) None of the above are correct 18. A diode commonly used as:
9. Electric conduction in a semiconductor takes (a) An amplifier (b) An oscillator
place due to: (c) A modulator (d) A rectifier
(a) Electrons only 19. In a full wave rectifier, the minimum number of
(b) Holes only diodes required is:
(c) Both electrons and holes (a) 1 (b) 2
(d) Neither electrons nor holes (c) 3 (d) 4

Std XII (SCIENCE) 1 Assignment (Physics)

Modern
OXFORD PUBLIC SCHOOL, BAM SOLID AND SEMICONDUCTOR
20. In a full wave rectifier, input frequency is 50 Hz. (a) electron and holes
The frequency of the ripples in the output is: (b) holes and electrons
(a) 50 Hz (b) 100 Hz(c) 25 Hz (d) 2500 Hz (c) donor and acceptor ions
21. In a half wave rectifier, the load current flows for (d) acceptor and donor ions.
(a) The complete cycle of the input signal 30. The thickness of the depletion layer is of the
(b) Only for positive half cycle of the input signal order of:
(c) Less than half cycle of the input signal (a) A micron (b) A millimeter
(d) More than half cycle but less than the (c) A nanometer (d) A picometer
complete cycle of the input signal 31. An ideal p-n junction diode permits
22. In which case valance band and conduction band (a) unidirectional flow of current.
are overlapped? (b) Bidirectional flow of current
(a) Insulator (b) Conductor (c) No flow of current
(c) Semiconductor (d) None of these (d) None of these
23. The forbidden energy gap of Ge and Si are 32. The resistance of an ideal diode in forward bias
respectively condition is:
(a) 1.1 ev and 0.7 ev (b) 0.7 ev and 1.1 ev (a) Infinite (b) Finite
(c) 0.3 ev and 0.7 ev (d) 0.7 ev and 0.3 ev (c) Zero (d) Negative
24. In which of the following figure junction diode is 33. The resistance of an ideal diode in reverse bias
forward biased? condition is:
(a) Infinite (b) Finite
(a) (c) Zero (d) Negative
34. In reverse bias condition, the thickness of the
(b)
depletion layer:
(c) (a) Increase (b) Decrease
(c) Remains same (d) None of these
(d) 35. The small currents in reverse bias condition are
25. When a p-n junction diode is reverse-biased the due to:
flow of current across the junction is mainly due (a) Electrons
to: (b) Majority charge carriers, i.e. electrons on n-
(a) Diffusion of charges side and holes in p-side
(b) Drift of charges (c) Minority charge carriers, i.e., electrons on p-
(c) Both drift and diffusion of charges side and holes on n-side
(d) Depends upon the nature of the material (d) Temperature
26. If the p-n junction is heavily doped breakdown 36. Knee voltage in Ge diode is of the order of:
voltage will _____. (a) 0.3V (b) 0.7V
(a) Increase (b) Decrease (c) 5V (d) 100V
(c) Nil (d) Remain constant 37. The device which converts A.C. to D.C. is called
27. In half wave recti fraction, if the input frequency (a) Oscillator (b) Rectifier
is 50 Hz the output frequency is: (c) Amplifier (d) None of the these
(a) 50 Hz (b) 100 Hz 38. The efficiency of half wave rectifier is
(c) 200 Hz (d) None of these (a) 81.2 % (b) 40.6%
28. The mobility of electrons is __________ in a (c) 33% (d) 67%
semiconductor. 39. In the symbol of a semiconductor diode, the
(a) Less than the mobility of holes arrow represents:
(b) equal to the mobility of holes (a) p-type material
(c) 0 (b) n-type material
(d) greater than hole mobility (c) both p and n type
29. The minority and majority charge carriers in n- (d) none of these
type semiconductor are

Std XII (SCIENCE) 2 Assignment (Physics)

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OXFORD PUBLIC SCHOOL, BAM SOLID AND SEMICONDUCTOR
40. When a p-n junction diode is forward biased, the (a) decreases (b) increases
flow of current across the junction is mainly due (c) remains unchanged (d) none
to: 51. When an electron jumps from conduction band
(a) Diffusion of charges to valency band in Si-solid, the emitted photon
(b) Depends upon nature of material has the wavelength of
(c) Drift of charges (a) 11273 Å (b) 19000 Å
(d) Both drift and diffusion of charges (c) 8857Å (d) None
41. The potential barrier at a p-n junction is due to 52. The maximum wavelength of electromagnetic
the charges on either side of junction. These radiation which can create a hole-electron pair
charges are: in Ge is:
(a) Fixed donor and acceptor ions (a) 11273Å (b) 19000Å
(b) Minority carriers (c) 8857Å (d) None
(c) Majority carrier 53. An ideal silicon pn-junction diode along with a
(d) Both majority and minority carriers. series resistance of 1kΩ is connected to a cell of
42. In a p-n junction diode, holes diffuse from p- emf 2.7V in forward biased condition. The
region to n-region because: forward current across the junction is:
(a) The free electrons in the n-region attract (a) 4mA (b) 2mA
them. (c) 6mA (d) 8mA
(b) They are swept across the junction by 54. In an n-type silicon, which of the following
potential difference. statement is true:
(c) There is a greater concentration of holes in p- (a) Electrons are majority carriers and trivalent
region as compared to n-region atoms are the dopants.
(d) None of these (b) Electrons are minority carriers and
43. The efficiency of full wave rectifier is pentavalent atoms are the dopants.
(a) 81.2 % (b) 40.6% (c) Holes are minority carriers and pentavalent
(c) 33% (d) 67% atoms are the dopants.
44. The barrier potential across the pn-junction (d) Holes are majority carriers and trivalent
made up off Si is: atoms are the dopants.
(a) 1.1 v (b) 0.7 v 55. Carbon, Silicon and germanium have four
(c) 0.3 v (d) 1.4 v valence electrons each. These are characterized
45. At absolute zero, a pure semiconductor behaves by valence and conduction bands separated by
as: energy band gap respectively equal to (Eg)C,
(a) conductor (b) Super conductor (Eg)Si and (Eg)Ge. Which of the following
(c) insulator (d) None statements is true?
46. The forward resistance of a pn junction diode is (a) (Eg)Si < (Eg)Ge < (Eg)C
_______ its reverse resistance. (b) (Eg)C < (Eg)Ge > (Eg)Si
(a) greater than (b) Lesser than (c) (Eg)C > (Eg)Si > (Eg)Ge
(c) equal to (d) None (d) (Eg)C = (Eg)Si = (Eg)Ge
47. If conductivity of n type & p-type semiconductor 56. In an unbiased p-n junction, holes diffuse from
are σn& σp then the p-region to n-region because
(a) σn> σp (b) σn = σp (a) free electrons in the n-region attract them.
(c) σn< σp (d) none of these (b) they move across the junction by the
48. Barrier potential depends on potential difference.
(a) Nature of semiconductor (c) hole concentration in p-region is more as
(b) Temperature compared to n-region.
(c) Amount of doping (d) All of these (d) All the above
49. With increase in forward bias across a pn- 57. When a forward bias is applied to a p-n junction,
junction beyond the knee voltage, the forward it
current. (a) raises the potential barrier
(a) increases linearly (b) reduces the majority carrier current to zero
(b) increases exponentially (c) lowers the potential barrier
(c)decreases exponentially (d) none of the above
(d) decreases linearly
50. With rise in temperature the resistivity of an *****
intrinsic semiconductor

Std XII (SCIENCE) 3 Assignment (Physics)