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CND101 Lab 7

This document describes a lab experiment on MOSFET characterization and amplifier design using Cadence simulation. It includes steps to characterize a MOSFET by measuring its I-V characteristics under varying gate and drain voltages. It also describes the three common MOSFET amplifier configurations - common source, common gate, and common drain - and includes the circuit schematics and expected output for each. Simulation results are provided for various analyses including DC sweeps, transients, and AC voltage gain. The document concludes with an assignment asking the reader to simulate and analyze a specific common source amplifier circuit to determine operating points and input/output resistances and suggests how to modify the circuit to maintain gain with a different load resistance.

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Mostafa Khaled
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24 views24 pages

CND101 Lab 7

This document describes a lab experiment on MOSFET characterization and amplifier design using Cadence simulation. It includes steps to characterize a MOSFET by measuring its I-V characteristics under varying gate and drain voltages. It also describes the three common MOSFET amplifier configurations - common source, common gate, and common drain - and includes the circuit schematics and expected output for each. Simulation results are provided for various analyses including DC sweeps, transients, and AC voltage gain. The document concludes with an assignment asking the reader to simulate and analyze a specific common source amplifier circuit to determine operating points and input/output resistances and suggests how to modify the circuit to maintain gain with a different load resistance.

Uploaded by

Mostafa Khaled
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Lab 7

MOSFET
(Metal-Oxide-Semiconductor Field -Effect Transistor)

Introduction:
A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is a type of
transistor that can be used as a switch or amplifier in electronic circuits. It consists
of a metal gate, an insulating oxide layer, and a semiconductor channel, and
operates by applying a voltage to the gate to control the flow of current through the
channel.
1-Device Characterization
The test setups for the NMOS transistor are shown in Figure 1 , which will produce
the plots shown in graphs 1 and 2 , using parametric analysis.

Figure 1 Active Mode circuit


Steps:
-Starting cadence with normal way then :
-Create >> Instance
-Library=> UMC 65
-SCHEMATIC1:

-we need to define DC analysis for getting the response of mosfet’s operation
- Launch >> ADE XL window.

-on sweep 2 variables ,need to clarify the input component so we can select it
by click on bottom like that:
-Choosing Analysis window =>dc
-click on =>” Save DC Operating point” icon
-Component parameter=>Select component
-Schematic Window => vds Source =>OK.
-Run from XL’s window

-Final Results
Graph 1 (I/Vds Characteristic for select regions of mosfet)

Note that : the output curve will be linear for 2 stages , the second stage due to
the library of MOSFET selecting breakdown voltage of MOSFET at almost 4v
so after that voltage ,MOSFET will act as resistor
 Replacing the main sweep variables as shown below
At Vds=1,2,3volts

Graph 2(I/Vgs for select the operating point of gate voltage )

From the above 2 curves we suggest to work on Vds=3volts and Vgs started
from 0.1volts
2-Types of MOSFET Amplifiers

MOSFET amplifiers are available in three types like common source (CS),
common gate (CG), and common drain (CD), where each type along with its
configuration is discussed below.

2-a Common Source

The common source circuit provides a medium input and output impedance levels.
Both current and voltage gain can be described as medium, but the output is the
inverse of the input, i.e. 180° phase change. This provides a good overall
performance and as such it is often thought of as the most widely used
configuration.

The common-source MOSFET amplifier is related to the CE (common-emitter)


amplifier of BJT. This is very popular due to high gain and larger signal
amplification can be achieved.

Figure 2 Common Source Circuit


Steps:
-Library=> analogLib
-Cell=>res
-view=> symbol

-Library=> analogLib
-Cell=>Vsin
-view=> symbol
- SCHEMATIC 2:

-select output and input node as active-mode lab


-Final Results:-
Graph 3(Transient analysis for checking the amplification)

 Making Ac analysis to check the output voltage gain


Graph 4 (voltage gain)
2-b Common gate
Common gate FET configuration provides a low input impedance while offering a
high output impedance. As the gate is grounded, this acts as a barrier between
input and output providing high levels of isolation, preventing feedback, especially
at very high frequencies.
Although the voltage gain is high, the current gain is low and the overall power
gain is also low when compared to the other FET circuit configurations available.
The other salient feature of this configuration is that the input and output are in
phase.
Note that: although gate have to be grounded, we have to make voltage difference
between gate and source =1v so MOSFET can work

Figure 3 Common Gate Circuit


Steps:
Same properties of component (input sine wave) and setup of analysis(even
transient or AC) then:-
SCHEMATIC 3:

-Final Results
Graph 5
Graph 6
2-c Common drain
The like the transistor emitter follower, the FET source follower configuration
itself provides a high level of buffering and a high input impedance. The actual
input resistance of the FET itself is very high as it is a field effect device. This
means that the source follower circuit is able to provide excellent performance as a
buffer.
The voltage gain is unity, although current gain is high. The input and output
signals are in phase.

Figure 4 Common Drain Circuit


Steps:
-SCHEMATIC 4:

-Final Results
Graph 7
Graph 8
Assignment 7

Using cadence simulation build the below circuit and answer the following
question using the simulator.

P.S.: Create a .scs file including the following model library at the adexl to
save the parameters of the Mosfet and to make it easier to analyze.
save*:gm sigtype=dev
save*:gds sigtype=dev
save*:id sigtype=dev
save*:vgs sigtype=dev
save*:vds sigtype=dev
save*:vth sigtype=dev
save*:vdsat sigtype=dev
save*:gmbs sigtype=dev
save*:region sigtype=dev
Q1) Using DC sweep find the value of RSS that will make the current ID =
2.75 mA. Report the Graph RSS vs ID

Q2) 2- After setting the Value of RSS Report the DC operating points of the
MOSFET ID, Vgs, Vds, gm, region of operation and vth

Q3) Find the input resistance and output resistance of the amplifier mid-band.
Bonus 7

Q4) If it’s desired to attach 100 Ω resistance instead of 8K load resistance and
maintain the same gain of the amplifier at the same value, then what type of
the amplifier stage should be inserted between this one and the load. (Justify
your answer using graph simulations)

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