Datta Meghe College of Engineering, Airoli

Department Of Electronics Engineering

EDC-I
MODULE-II_Bipolar Junction Transistor (BJT)

 It is invented by, John Bardeen , Wiliam Shockley and Walter H Brattain on December 23 , 1947
in Bell Laboratories.
 When a third doped element (either P or N type semiconductor) is added to a P-N Junction, a
new semiconductor device is formed that device is basically called as Bipolar Junction
Transistor (BJT) or simply TRANSISTOR.

 By adding N type semiconductor to a P-N Junction , we will get NPN Transistor and by adding
P type semiconductor to a P-N Junction , we will get PNP Transistor

 So , the two types of transistors are PNP and NPN Transistors.

 In PNP , N-type semiconductor is sandwich between two P-type semiconductors .

 In NPN , P-type semiconductor is sandwich between two N-type semiconductors .

 The name TRANSISTOR is divided in two parts (TRANS + ISTOR) i.e. TRANS means
TRANSFER property and ISTOR means RESISTOR property.

 Thus the name TRANSISTOR comes from the fact that , it transfers the electrical signal from
low resistance path to high resistance path.

 Basically a reSISTOR that amplifies electrical impulses as they are TRANsferred from its
INPUT to its OUTPUT terminals.

 Transistor is a two junction and three terminal device.

 It is called as a bipolar device , because , the current conduction in BJT is carried out by both the
types of charge carriers i.e. By Holes and Free Electrons.

 Name of the terminals are EMITTER , BASE and COLLECTOR

 Junction between Emitter and Base is called as Emitter-Base Junction (i.e. E-B Junction & is
denoted by JE) . It is always Forward Biased for normal operation of Transistor.

 Junction between Collector and Base is called as Collector-Base Junction (i.e. C-B Junction & is
denoted by JC). It is always Reverse Biased for normal operation of Transistor.
 TWO TYPES OF TRANSISTOR

NPN:-

PNP:-

THREE TERMINALS OR REGIONS OF BJT

 Base: - The middle portion which forms two PN Junctions between the Emitter and the
Collector is called as Base.
 The base of the transistor is thin as compared to the Emitter and is a lightly doped region.
 The function of the base is to control the flow of charge carriers.
 Doping Level is 1017 dopants /cm3.
 Lightly Doped.
 Emitter: - The section on one side that supplies charge carriers (i.e. Electrons or Holes) to the
other two sections is called as Emitter.
 The Emitter is always Forward Biased with respect to Base
 Doping Level is 1019 dopants /cm3.
 Heavily Doped , so that it can inject a large number of charge carriers (i.e. Electrons or Holes)
to the base depending on the type of transistor,
 Collector: - The portion on the other side of the transistor (i.e the side opposite to Emitter) that
collects the charge carriers (i.e. Electrons or Holes) is called as Collector.
 The Collector is always Reverse Biased with respect to Base
 Doping Level is 1015 dopants /cm3.
 Moderately Doped.
 The doping level of the collector is in between the heavily doping of the Emitter and lightly
doping of the Base
STRUCTURE OF NPN TRNSISTOR

WORKING PRINCIPLE OF NPN TRANSISTOR

 Working of NPN Transistor
 Figure in previous slide shows the NPN transistor with Forward Bias to Emitter-Base Junction
and Reverse Bias to Collector-Base Junction.

 The Forward Bias causes the electrons in the N-type emitter to flow towards the base which
constitutes the Emitter Current IE.

 As these electrons flow through the P-type base, they tend to combine with holes.

 As the base is lightly doped and very thin, therefore, only few electrons (Less than 5%) , combine
with holes to constitute base current IB.

 The remainder electrons (more than 95%) , cross over into the collector region to constitute the
Collector current IC.

 In this way, almost the entire emitter current flows in the collector circuit.

 It is clear that, Emitter current is the sum of collector and base currents.

 Thus, the total current flowing within the transistor is given by the following equation….

IE=IB + IC

WORKING PRINCIPLE OF PNP TRANSISTOR

 In this battery VEE keeps the Emitter-Base junction Forward Bias and VCC keeps the Collector-
Base Junction Reverse Biased.

 Arrowhead indicates the direction of conventional current flow. (Which flow always from
positive to negative terminal).

 Due to this reason, arrow on the Emitter terminal of transistor is in INWARD direction.
(Emitter Current enters the emitter region as shown in figure.)

 But in case of NPN transistor, direction of conventional current is opposite and hence arrow on
the Emitter terminal of transistor is in OUTWARD direction. (Emitter Current Leaves the
emitter region)
 Working of PNP Transistor
 Figure in previous slide shows the PNP transistor with Forward Bias to Emitter-Base Junction
and Reverse Bias to Collector-Base Junction.

 The Forward Bias causes the Holes in the P-type emitter to flow towards the base which
constitutes the Emitter Current IE.

 As these holes flow through the N-type base, they tend to combine with electrons.

 As the base is lightly doped and very thin , therefore , only few holes (Less than 5%) , combine
with electrons to constitute base current IB.

 The remainder holes (more than 95%), cross over into the collector region to constitute the
Collector current IC.

 In this way , almost the entire emitter current flows in the collector circuit.

 It may be noted that current conduction within PNP transistor is by holes.

 However, in the external connecting wires , the current is still by electrons.

 It is clear that, Emitter current is the sum of collector and base currents.

 Thus, the total current flowing within the transistor is given by the following equation….

IE=IB + IC
WORKING PRINCIPLE OF PNP TRANSISTOR
 Importance of Transistor Action
 The Input Circuit (i.e. Emitter-Base Junction) has low resistance path because of forward bias
whereas Output Circuit (i.e. Collector-Base Junction) has high resistance due to reverse bias.

 As we have seen, the input emitter current almost entirely flows in the collector circuit.

 Therefore, a transistor transfers the input signal from a low-resistance circuit to a high-resistance
circuit.

 This is the key factor responsible the Amplifying capability of transistor

 Why BJT is called as Bipolar Device?

 BJT is called as bipolar device because, in BJT, the current conduction is done by both the types
of carries (i.e. by holes and electrons).

 In , NPN transistor , the maximum current conduction done by electrons.

While, In PNP transistor , the maximum current conduction done by holes

Connections & Symbols of transistors

 BJT characteristics (CE, CB, CC configurations)

Practical circuit diagram of CB mode For NPN Transistor

Practical circuit diagram of CB mode For PNP Transistor

 Input characteristics of CB mode
 Input Characteristics:- It is the curve between I/P voltage VBE Vs I/P current IE by keeping
O/P voltage VCB constant.

 In this, with small increase in VBE, the emitter current IE , increases rapidly.
 The emitter current is almost independent of collector-base voltage VCB.
 This leads to the conclusion that the emitter current (and hence collector current) is almost
independent of collector voltage.
 Due to which, it offers a low resistance path to the flow of current.
 Hence the I/P resistance of a transistor is low.
 This characteristic is just similar to Forward characteristics of PN junction diode.
 Input Resistance:- Ratio of change in VBE to the change in IE at constant VCB
* This resistance is quiet small because a very small increase in input voltage VBE is sufficient
to produce a large flow of emitter current IE.
* Its value is in few ohms

Output Characteristics of CB Mode

 Output Characteristics:- It is the curve between O/P Voltage VCB Vs O/P Current IC by
keeping I/P current IE constant.
 Following points to be noted….

 1) The collector current IC varies with VCB only at a low voltages (<1V).
 The transistor is never operated in this region.
 2) When the value of VCB is raised above 1 - 2V , collector current IC becomes almost constant
and is indicated by straight horizontal curves.
 It means that IC is independent of VCB and depends on IE only.
 This is consistent with the theory that the emitter current IE flows almost entirely to the
collector terminal.
 The transistor is operated in this region.
 3) A very large change in collector-base voltage , VCB
 Produces only a tiny change in collector current I C.
 This means that, the output resistance is very high.
 Output Resistance:- It is the ratio of change in collector-base
 Voltage VCB to resulting change in collector current at constant IE
 This resistance is very high of the order of several tens of KΏ.
 This is not surprising because collector current IC changes very slightly with change in VCB

BJT characteristics (CE, CB, CC configurations)

 Current Amplification Factor and Total Collector Current of CB mode

 Current Amplification Factor (α):- It is the ratio of collector current IC to the emitter current
IE.

 As the value of collector current IC is slightly less than emitter current IE , the value of current
amplification factor (α) , is always less than unity.
 The value of current amplification factor (α) always ranges in between 0.9 to 0.99.
 Total Collector Current:- It is by two components namely…
 A) A part of Emitter current that flows into the collector. i.e. IC= αIE
 B) Collector to Base Leakage current when Emitter is open circuited , ICBO
 Hence , Total Collector Current flow in CB mode is given by……
IC = αIE + ICBO

BJT characteristics (CE, CB, CC configurations)

BJT characteristics (CE, CB, CC Configurations)

 Common Emitter (CE) Configuration

Current Amplification Factor and Total Collector Current for CE Mode

 Current Amplification Factor (β) :- It is the ratio of change in collector current IC to the base
current IB.

 As , the collector current , IC is greater than base current , IB , therefore , the value of β always
ranges in between 20-600.
 It is sometimes referred to as hfe , a term used in transistor modeling calculations.
 Total Collector Current: - It is by two components namely…
 A) A part of Base current that flows into the collector. i.e. IC= β * IB
 B) Collector to Emitter Leakage current when base is open circuited , ICEO
 Hence , Total Collector Current flow in CE mode is given by……
IC = β IB + ICEO

** Emitter Current in terms of IB and β…..

** Current flowing through the transistor is given by…..

IE = IB + I C

Divide both sides by IB

IE / IB = IB / IB + IC / IB

IE / IB = (1 + β)

Therefore, IE = (β + 1) IB
Relation between Alpha (α) and Beta (β)

Practical Circuit Diagram of CE Mode

 Input Characteristics of CE Configuration

 Input Characteristics:- It is the curve between base current I B and the base –emitter voltage
VBE at constant collector-emitter voltage VCE.

The following points may be noted from the characteristics:-

 1) The characteristic resembles that of a forward biased diode curve. This is expected since the
base-emitter section of transistor is a diode and it is forward biased.
 2) As compared to CB arrangement, IB increases less rapidly with VBE. Therefore I/P resistance
of a CE circuit is higher than that of CB circuit.
 Input Resistance:- It is the ratio of change in base-emitter voltage to the change in base
current.
 It is of the order of few hundred ohms.

Output Characteristics of CE Configuration

Output Characteristics:- It is the curve between collector current IC and the collector–emitter
voltage VCE at constant base current IB
 The following points may be noted from the Characteristics:-

 1) The collector current IC varies with VCE for VCE between 0 and 1V only. After this the collector
current becomes almost constant and independent of VCE. This value of VCE up to which collector
current IC changes with VCE is called the Knee Voltage (Vknee)/. The transistors are always
operated in the region above the knee voltage.

 2) Above the knee voltage , IC is almost constant. However , a small increase in IC with increasing
VCE is caused by the collector depletion layer getting wider and capturing a few more majority
carriers before electron-hole combination occur in the base area.

 3) For any value of VCE , above knee voltage , the collector current I C is approximately equal to
β x IB.

 Output Resistance:- It is the ratio of change in collector-emitter voltage to the change in

collector current , IC at constant I B.

Its value is of the order of 50KΏ

Regions of Transistor Action

 Region of Transistor Operations

Common Collector Configuration

 Current Gain (γ):- It is define as the ratio of Emitter Current to the Base Current.

γ = IE / IB
RELATION BETWEEN ALPHA (α) AND GAMMA (γ)