This document contains instructions for the 2016/2017 Ordinary Examinations for the Bachelor of Science in Electrical & Electronic Engineering, Mechatronic Engineering, and Bachelor of Education in Technology (Electrical & Electronic Engineering) programs. It outlines five questions on various analog electronics topics that students must answer, including questions about MOSFETs, diode characteristics, transistor circuits, rectifiers, and semiconductor materials. Diagrams and calculations are required.
This document contains instructions for the 2016/2017 Ordinary Examinations for the Bachelor of Science in Electrical & Electronic Engineering, Mechatronic Engineering, and Bachelor of Education in Technology (Electrical & Electronic Engineering) programs. It outlines five questions on various analog electronics topics that students must answer, including questions about MOSFETs, diode characteristics, transistor circuits, rectifiers, and semiconductor materials. Diagrams and calculations are required.
This document contains instructions for the 2016/2017 Ordinary Examinations for the Bachelor of Science in Electrical & Electronic Engineering, Mechatronic Engineering, and Bachelor of Education in Technology (Electrical & Electronic Engineering) programs. It outlines five questions on various analog electronics topics that students must answer, including questions about MOSFETs, diode characteristics, transistor circuits, rectifiers, and semiconductor materials. Diagrams and calculations are required.
This document contains instructions for the 2016/2017 Ordinary Examinations for the Bachelor of Science in Electrical & Electronic Engineering, Mechatronic Engineering, and Bachelor of Education in Technology (Electrical & Electronic Engineering) programs. It outlines five questions on various analog electronics topics that students must answer, including questions about MOSFETs, diode characteristics, transistor circuits, rectifiers, and semiconductor materials. Diagrams and calculations are required.
DEPARTMENT OF ELECTRICAL AND ELECTRICS ENGINEERING
2016/2017 ORDINARY EXAMINATIONS
THIRD/SECOND YEAR EXAMINATIONS FOR THE BACHELOR OF SCIENCE
IN; ELECTRICAL & ELECTRONIC ENGINEERING, MECHATRONIC ENGINEERING AND BACHELOR OF EDUCATION IN TECHNOLOGY (ELECTRICAL & ELECTRONIC ENGINEERING)
EEE 2202 ANALOGUE ELECTRONICS I
DURATION: 2 HOURS DATE: AUGUST 2017
Instructions: This paper consists of FIVE questions. Answer question ONE and any other TWO
Question One
(a) Why are N-channel MOSFETS preferred over P-channel MOSFETS?
(2 marks)
(a) Given the figure below, the Vin = 3 Volts, VT = 2 volts and k = 100microA/V2, calculate the Vo and the ID. (4 marks)
Figure 1(a) (b) With the aid of well labeled diagrams, explain how a silicon crystal can be doped to form p-type and n-type extrinsic semiconductors. Give examples of appropriate doping elements for each case. (6 marks)
(c) A diode connected as shown in Fig Q1 (c) yields the characteristics shown in the Table Q1 (c). Use the graph paper provided to answer this question.
Fig Q1 (c)
Table 1(c)
Forward 0 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
Voltage (V)
Forward 0 1 5 28 65 120 175 240 330
Current (mA)
(i) Use a DC load line to determine the current flowing in the circuit.
(ii) Calculate the voltage across the load resistance
(iii) Find the value of load resistance that will allow a current of 135mA to flow in the circuit (10 marks)
(d) Differentiate between analog and digital signals. (4 marks)
(e) Use Thevenin’s Theorem to find the total resistance, RThevenin, the Current through the 10Ω resistor in the circuit below; (6 marks) Figure 1(e)
Question Two
(a) If a common emitter circuit connection has the following parameters: VCC =9V, VCE = 3V, VBE = 0.3V, I1=10IB, IC =2mA, RC = 2.2 kΩ and β =50. Determine RB1, RB2 and RE. (7 marks)
Figure 2(a)
(b) A full wave rectifier produces an RMS output of 30 V. Determine;
(i) Find the average DC output voltage
(ii) Find the peak input voltage
(iii) State the assumption made in your calculations. (6 marks)
(c) Describe a thyristor explaining any three methods used to switch it on. (7 marks) Question Three (a) With aid of a well labeled circuit diagram and volt-ampere characteristic, explain how a Zener diode regulates the amount of voltage across a load resistor R L . (7 marks) (b) Describe the operation of a junction field effect transistor. (8 marks) (c) With aid of a well labeled diagram, explain how currents flow in an n-p-n transistor operating in the forward active mode. (5 marks)
Question Four
a) With aid of Fermi levels, discuss the different types of semiconductor materials (Intrinsic, P-type, N-type). (4 marks) b) With an aid of diagrams, discuss the Full wave center tapped rectifier circuit. (8 Marks) c) Given the following properties of a Silicon based intrinsic semiconductor (the intrinsic carrier density is 1.45x 1010 carriers per cm3, the mobilities of electrons and holes are 1500 and 475 cm2/Vs, respectively), derive and then compute the conductivity. (8 marks)
Question Five
a) State any four advantages of field effect transistors over bipolar junction transistors. (4 marks)
b) For the voltage divider circuit shown in Fig. Q5 (b), determine I C and VCE . (10 marks) R1 17.3kΩ RC 4kΩ
β 100
R2 2.7 kΩ RE 1 kΩ
Fig. Q5 (b)
c) With the aid of well labeled diagrams, explain how an n-p-n transistor can be
