BTS50015-1TMA

Smart High-Side Power Switch

Data Sheet
Rev. 1.1, 2012-06-14

Automotive Power
 BTS50015-1TMA

Table of Contents

Table of Contents

1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.3 Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1 Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.1 Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.2 Switching a Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.3 Switching an Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.3.1 Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1.3.2 Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1.4 Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.1.5 PWM Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2 Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2.1 Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2.2 Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.3.1 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.3.2 Protection during Loss of Load or Loss of VS Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.3.3 Undervoltage Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.3.4 Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.3.5 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.3.6 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.3.6.1 Activation of the Switch into Short Circuit (Short circuit Type 1) . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.3.6.2 Short Circuit Appearance when the Device is already ON (Short circuit Type 2) . . . . . . . . . . . . 21
5.3.7 Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.4 Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.4.1 IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.4.2 SENSE Signal in Different Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.4.3 SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.4.3.1 SENSE Signal Variation, Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . . 24
5.4.3.2 SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.4.3.3 SENSE Signal in Case of Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.4.3.4 SENSE Signal in Case of Over Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Electrical characteristics BTS50015-1TMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.1 Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6.2 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
8 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8.1 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Data Sheet 2 Rev. 1.1, 2012-06-14

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Table of Contents

9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Data Sheet 3 Rev. 1.1, 2012-06-14

Smart High-Side Power Switch BTS50015-1TMA

1 Overview

Application
• All types of resistive and capacitive loads
• Replaces electromechanical relays and fuses
• Most suitable for applications with high current loads, such as heating
system, main switch for power distribution, start-stop power supply switch
• PWM application with low frequencies

Features PG-TO220-7-232
• One channel device
• Low Stand-by current
• Wide input voltage range (can be driven by logic levels 3.3V and 5V as well as directly by VS)
• Electrostatic discharge protection (ESD)
• Optimized Electromagnetic Compatibility (EMC)
• Logic ground independent from load ground
• Very low leakage current on OUT pin
• Compatible to cranking pulse requirement (test pulse 4 of ISO7637 and cold start pulse in LV124)
• Embedded diagnostic functions
• Embedded protection functions
• Green Product (RoHS compliant)
• AEC Qualified

Description
The BTS50015-1TMA is a 1.5mΩ single channel Smart High-Side Power Switch, embedded in a PG-TO-220-7-
232 package, providing protective functions and diagnosis. It contains Infineon® Reversave. The power transistor
is built by a N-channel power MOSFET with charge pump. It is specially designed to drive high current loads up
to 80A, for applications like switched battery couplings, power distribution switches, heaters, glow plugs, in the
harsh automotive environment.

Type Package Marking

BTS50015-1TMA PG-TO-220-7-232 S50015A

Data Sheet 4 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Overview

Table 1 Product Summary

Parameter Symbol Values
Operating voltage range VS(OP) 8 V … 18 V
Extended supply voltage contain dynamic VS (DYN) 3.2 V … 28 V
undervoltage capability
Maximum on-state resistance at Tj = 150 °C RDS(ON) 3 mΩ
Minimum nominal load current IL (nom) 33 A
Typical current sense ratio ΔkILIS 51500
Minimum short circuit current threshold IL (OVL) 135 A
Maximum stand-by current for the whole device IS (OFF) 18 μA
with load at TA =TJ= 85°C
Maximum reverse battery voltage at TA = 25°C for -VS(REV) 16 V
2 min

Embedded Diagnostic Functions

• Proportional load current sense
• Short circuit / Overtemperature detection
• Latched status signal after short circuit or overtemperature detection

Embedded Protection Functions

• Infineon® Reversave: Reverse battery protection by self turn ON of power MOSFET
• Infineon® Inversave: Inverse operation robustness capability
• Secure load turn-OFF while device loss of GND connection
• Overtemperature protection with latch
• Short circuit protection with latch
• Overvoltage protection with external components
• Enhanced short circuit operation
• Infineon® SMART CLAMPING

Data Sheet 5 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Block Diagram

2 Block Diagram

R VS VS

voltage sensor
internal
power
over Smart clamp
supply
temperature

gate control
driver & over current
IN
logic charge pump switch OFF
ESD
protection OUT
load current sense

IS

GND Blockdiagram

Figure 1 Block Diagram for the BTS50015-1TMA

Data Sheet 6 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Pin Configuration

3 Pin Configuration

3.1 Pin Assignment

2 4 6
1 3 5 7

Figure 2 Pin Configuration

3.2 Pin Definitions and Functions

Pin Symbol Function

1 GND GrouND; Ground connection
2 IN INput; Input signal for channel activation. HIGH active
3 IS Sense; Provides signal for diagnosis
1)
4, Cooling tab VS Supply Voltage; Battery voltage
2)
5, 6, 7 OUT OUTput; Protected high side power output
1) When cooling tab is not connected to VS and the whole current is only flowing via pin 4, additional 0.8mΩ resistance must
be added to RDS(ON)
2) All output pins are internally connected and they also have to be connected together on the PCB. Not shorting all outputs
on PCB will considerably increase the ON-state resistance and decrease the current sense / overcurrent tripping accuracy.
PCB traces have to be designed to withstand the maximum current.

Data Sheet 7 Rev. 1.1, 2012-06-14

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Pin Configuration

3.3 Voltage and Current Definition

Figure 3 shows all terms used in this datasheet, with associated convention for positive values.

IS
VS

VS
IIN
IN
VIN VDS

IOUT
OUT

Vb,IS

IIS V OUT
IS
GND
VIS
IGND

Figure 3 Voltage and Current Definition

Data Sheet 8 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

General Product Characteristics

4 General Product Characteristics

4.1 Absolute Maximum Ratings

Table 2 Absolute Maximum Ratings 1)

Tj = -40°C to +150°C; (unless otherwise specified)
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Supply Voltages
Supply Voltage VS -0.3 – 28 V – 4.1.1
2)
Reverse polarity voltage -VS(REV) 0 – 16 V t < 2 min 4.1.2
TA = 25°C
RL ≥ 0.5Ω
3)
Supply voltage for load dump VS(LD) – – 45 V RI = 2Ω 4.1.5
protection RL = 2.2Ω
RIS = 1kΩ
RIN = 4.7kΩ
Short circuit capability
4)
Supply voltage for short circuit VS(SC) 5 – 20 V RECU = 20mΩ 4.1.3
protection LECU = 1μH
Rcable = 6mΩ/m
Lcable = 1μH/m
l = 0 to 5m
R, C as shown in
Figure 50
See Chapter 5.3
5)
Short circuit is permanent: IN pin nRSC1 – – 100k – 4.1.4
toggles short circuit (SC type 1) (Grade D)
GND pin
Current through ground pin IGND -15 – 107) mA – 4.1.6
–6) – 15 t ≤ 2 min
Input Pin
Voltage at IN pin VIN -0.3 – VS V – 4.1.7
Current through IN pin IIN -5 – 5 mA – 4.1.8
– – 506) t ≤ 2 min
Maximum retry cycle rate in fault ffault – – 1 Hz – 4.1.9
condition
Sense Pin
Voltage at IS pin VIS -0.3 – VS V – 4.1.10
7)
Current through IS pin IIS -15 – 10 mA – 4.1.11
–6) – 15 t ≤ 2 min

Data Sheet 9 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

General Product Characteristics

Table 2 Absolute Maximum Ratings (cont’d)1)

Tj = -40°C to +150°C; (unless otherwise specified)
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Power Stage
Maximum energy dissipation by EAS – – 1000 mJ VS = 13.5V 4.1.12
switching off inductive load IL = IL(NOM) = 33A
Single pulse over lifetime TJ(0) ≤ 150°C
See Figure 5
Average power dissipation PTOT – – 200 W TC = -40°C to 4.1.15
150°C
Voltage at OUT Pin VOUT -64 – – V – 4.1.21
Temperatures
Junction Temperature TJ -40 – 150 °C – 4.1.16
Dynamic temperature increase ΔTJ – – 60 K See Chapter 5.3 4.1.17
while switching
Storage Temperature TSTG -55 – 150 °C – 4.1.18
ESD Susceptibility
ESD susceptibility (all pins) VESD -2 – 2 kV HBM8) 4.1.19
8)
ESD susceptibility OUT Pin vs. VESD -4 – 4 kV HBM 4.1.20
GND / VS
1) Not subject to production test, specified by design.
2) The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection.
3) VS(LD) is setup without DUT connected to the generator per ISO 7637-1.
4) In accordance to AEC Q100-012
5) In accordance to AEC Q100-012. Test aborted after 100,000 cycles. Short circuit conditions deviating from AEC Q100-012
may influence the specified short circuit cycle number in the datasheet.
6)The total reverse current (sum of IGND, IIS and -IIN) is limited by -VS(REV)_max and RVS.
7) TC ≤ 125°C
8) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001

Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.

Data Sheet 10 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

General Product Characteristics

250

200

150
IL,max [A]

100

50

0
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

tpulse [sec]

Figure 4 Maximum Single Pulse Current vs. Pulse Time, TJ ≤ 150°C, Tamb = 85°C, lLEAD = 3.7mm
Above diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Furthermore, above
diagram is only valid for short lead length, i.e. narrow distance between package and PCB. For long lead length it
is mandatory to connect the cooling tab to the supply voltage. Pulse time may be limited due to thermal protection
of the device.

1.4

1.2

1.0

0.8
EA [J]

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140
IL(0) [A]

Figure 5 Maximum Energy Dissipation for Inductive Switch OFF, EA vs Load Current

Data Sheet 11 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

General Product Characteristics

4.2 Functional Range

Table 3 Functional Range

Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Nominal operating voltage VS(OP) 8 – 18 V – 4.2.1
Extended operating voltage VS(OP_EXT) 5.3 – 28 V 1)
VIN ≥ 2.2V 4.2.2
IL ≤ IL(NOM)
TJ ≤ 25°C
Parameter
deviations possible
5.5 – 28 V 1)
VIN ≥ 2.2V
IL ≤ IL(NOM)
TJ = 150°C
Parameter
deviations possible
Extended operating voltage VS(DYN) 3.22) – 28 V 1)
acc. to ISO7637 4.2.3
contain short dynamic
undervoltage capability
1)
Undervoltage turn OFF VS(UV_OFF) – – 4.5 V VIN ≥ 2.2V 4.2.4
voltage RL = 270Ω
VS decreasing
See Figure 18
1)
Undervoltage shutdown VS(UV)_HYS – 500 – mV RL = 270Ω 4.2.6
hysteresis See Figure 18
Slewrate at OUT dVDS/dt – – 101) V/μs |VDS| < 3V 4.2.7
See Chapter 5.1.4
1) Not subject to production test. Specified by design
2) TA = 25°C; RL = 0.5Ω; pulse duration 6ms; cranking capability is depending on load and must be verified under application
conditions

Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.

4.3 Thermal Resistance

Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.

Table 4 Thermal Resistance

Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
1)
Junction to Case RthJC – – 0.5 K/W 4.3.1
1)
Junction to Ambient (free air) RthJA – 70 – K/W 4.3.3
1) Not subject to production test, specified by design.

Data Sheet 12 Rev. 1.1, 2012-06-14

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Functional Description

5 Functional Description

5.1 Power Stage

The power stage is built by a N-channel power MOSFET (DMOS) with charge pump.

5.1.1 Output ON-State Resistance

The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 30
shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 5.3.5.
A HIGH signal (see Chapter 5.2) at the input pin causes the power DMOS to switch ON with a dedicated slope,
which is optimized in terms of EMC emission.

5.1.2 Switching a Resistive Load

Figure 7 shows the typical timing when switching a resistive load. The power stage has a defined switching
behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.

VOUT VOUT
90% VS

∆V/∆tON IOUT I OUT ∆V/∆t OFF

50% VS

25% VS tOFF_delay
t ON_delay
10% VS VIN VIN
tON t OFF

Figure 7 Switching a Resistive Load Timing

5.1.3 Switching an Inductive Load

5.1.3.1 Output Clamping

When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device due to
high voltages, there is a Infineon® SMART CLAMPING mechanism implemented that keeps negative output
voltage to a certain level (VS - VDS(CL)). Please refer to Figure 8 and Figure 9 for details. Nevertheless, the
maximum allowed load inductance remains limited.

Data Sheet 14 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

VS
R VS
Smart
Clamp
IN VDS
LOGIC

VBAT IL
GND OUT
VOUT
VIN L, RL

Figure 8 Output Clamp

VIN

t
VOUT
VS

VS -V DS(CL)

IL

Tj

TJ0
t

Figure 9 Switching an Inductance

The BTS50015-1TMA provides Infineon® SMART CLAMPING functionality. To increase the energy capability for
single operation, the clamp voltage VDS(CL) increases over the junction temperature TJ and load current IL. Refer
to Figure 38.

5.1.3.2 Maximum Load Inductance

During demagnetization of inductive loads, energy has to be dissipated in the BTS50015-1TMA. This energy can
be calculated with following equation:

L V S – V DS ( CL ) RL × IL ⎞
E = V DS ( CL ) × ------ × --------------------------------- × ln ⎛ 1 – --------------------------------
- + IL
RL RL ⎝ V S – V DS ( CL )⎠ (1)

Data Sheet 15 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

Following equation simplifies under the assumption of RL = 0Ω.

1 VS
E = --- × L × I L × ⎛ 1 – --------------------------------
-⎞
2
⎝ (2)
2 V S – V DS ( CL )⎠

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 5 for the
maximum allowed energy dissipation as function of the load current.

If the application requires the inductive load to be switched on/off repetitively, the recommendation in Chapter 8
must be followed.

5.1.4 Inverse Current Capability

In case of inverse current, meaning a voltage VOUT(INV) at the output higher than the supply voltage VS, a current
IL(INV) will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 10). In case
the IN pin is HIGH, the power DMOS is already activated and keeps ON. In case, the input goes from “L” to “H”,
the DMOS will be activated. Under inverse condition, the device is not overtemperature / overload protected. The
IS pin is high impedance. Due to the limited speed of INV comparator, the output voltage slope needs to be limited.

VBAT

VS

Gate
driver
VOUT (INV)

INV OL
I L(INV)
Comp.
comp. OUT

GND

Figure 10 Inverse Current Circuitry

Data Sheet 16 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

(a) Inverse spike during ON -mode (b) Inverse spike during ON -mode (c) Inverse spike during ON -mode with short
for short times (< tp,INV ,noFAULT) for times > tp,INV ,noFAULT circuit after leaving Inverse mode
VOUT VOUT VOUT

VS VS VS

t t t
< t p, INV ,noFAULT > t p, INV ,noFAULT
IIS tOFF (trip ) IIS IIS
IIS (fault ) IIS (fault )
tsIS (ON)_J t p, noINV, FAULT
tpIS (FAULT )

t t t
Internal Fault -flag set
Figure 11 Inverse Behavior - Timing Diagram

5.1.5 PWM Switching

For PWM switching application, a tIN(RESETDELAY) parameter should be respected by defining the maximum PWM
frequency (see Figure 21). The average power over time must be below the specified value (see paramater
4.1.15) and is defined as (see Figure 12):
PTOT = (switching_ON_energy + switching_OFF_energy + IL2 * RDS(ON) * tDC) / period
For system with PWM switching, the maximum retry cycle (ffault) under fault condition should not be exceeded.

VIN
VIN_H

V IN_L
t

PTOT
t

tDC

Figure 12 Switching in PWM

5.2 Input Pins

5.2.1 Input Circuitry

The input circuitry is compatible with 3.3V and 5V microcontrollers or can be directly driven by VS. The concept of
the input pin is to react to voltage threshold. With the Schmitt trigger, the output is either ON or OFF. Figure 13
shows the electrical equivalent input circuitry.

Data Sheet 17 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

RVS VS

IN

IIN

GND

Figure 13 Input Pin Circuitry

5.2.2 Input Pin Voltage

The IN uses a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set by the
threshold VIN(L) Max and VIN(H) Min. The exact value where ON and OFF take place depends on the process, as
well as the temperature. To avoid cross talk and parasitic turn ON and OFF, an hysteresis is implemented. This
ensures immunity to noise.

Data Sheet 18 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.3 Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed to prevent the
destruction of the IC from fault conditions described in the datasheet. Fault conditions are considered as “outside”
normal operating range. Protection functions are designed neither for continuous nor for repetitive operation.
Figure 14 describes the typical functionality of the diagnosis and protection block.

VS
V DS
Vb,IS ESD VS
RVS
V S(int)
IN protection current
sense

2V
&
Driver

0
1
IIS (fault ) Over-
IS current IL
1

V IS IL /ΔkILIS +IIS (OFFSET ) OUT

tIN(RESET
IIS DELAY)

If VOUT &
RIS < V S(int ) - 3V: R Q

IL >ICL
≥1 & S Q FAULT
30mV
ϑj> ϑjT

driver logic inverse comparator

GND

GND

Figure 14 Diagram of Diagnosis & Protection Block

5.3.1 Loss of Ground Protection

In case of loss of module or device ground, where the load remains connected to ground, the device protects itself
by automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on
IN pin. It is recommended to use input resistors between the microcontroller and the BTS50015-1TMA to ensure
switching OFF of channel. In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the
DMOS. Figure 15 sketches the situation.

Vbat
RVS VS
Z(AZ)GND
Z(AZ)I S
2* Z(ESD)

RIN
OUT
Logic

IN
VIN

IS GND

RIS

Figure 15 Loss of Ground Protection with External Components

Data Sheet 19 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.3.2 Protection during Loss of Load or Loss of VS Condition

In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is
recommended to use a Z-diode, a varistor (VZ2 < 28V) or VS clamping power switches with connected loads in
parallel.
In case of loss of VS connection, the inductance of the wire connecting the load should be taken into account and
should be demagnetized by providing a proper current path. It is recommended to protect the device using a zener
diode together with a diode (VZ1 + VD1 < 16V), as shown in Figure 16.
For a proper restart of the device after loss of VS, the input voltage must be applied delayed to the supply voltage.
This can be realized by an capacitor between IN and GND (see Figure 50).
For higher clamp voltages, currents through all pins have to be limited according to the maximum ratings. Please
see Figure 16 and Figure 17 for details.

ext. components acc.

VBAT to either (A) or (B)
(A) R VS required, not both
VS

D1
Logic

(B)
OUT
Z1

IN IS GND D1 R/L cable

R IN R IS
R/C load
Z1
VIN

Figure 16 Loss of VS

VBAT L/R cable

RVS VS
Logic

Z2

OUT
IN IS GND

RIN RIS R/L cable

V IN R/ C load

Figure 17 Loss of Load

Data Sheet 20 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.3.3 Undervoltage Behavior

If the supply voltage is in the area below VS(UV_OFF), the device is OFF (turns OFF). As soon as the supply voltage
is above VS(OP_EXT)_min, the device will switch ON again. Figure 18 sketches the undervoltage behavior.

VOUT

VIN ≥ 2.2V

VS
VS(UV_OFF) VS(OP_EXT)_min
Figure 18 Undervoltage Behavior

5.3.4 Overvoltage Protection

In the case VS(SC)_max < VS < VDS(CL), the ouput transistor is still operational and follows the input. Parameters are
no longer warranted and lifetime is reduced compared to normal mode. This specially impacts the short circuit
robustness, as well as the maximum energy EAS the device can handle.
The BTS50015-1TMA provides Infineon® SMART CLAMPING functionality, which suppresses non nominal over
voltages by actively clamping the overvoltage across the power stage and the load. This is achieved by controlling
the clamp voltage VDS(CL) depending on the junction temperature TJ and the load current IL (see Figure 19 for
details).

VBAT

RVS VS
2*Z(ESD )

Z(A Z) GND
Z(A Z)IS

RIN
Logic

VIN IN
OUT

IS GND

RIS

Figure 19 Overvoltage Protection with External Components

Data Sheet 21 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.3.5 Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the risk
of overtemperature, the device provides Infineon® Reversave function. The power in this intrinsic body diode is
limited by turning the DMOS ON. The DMOS resistance is then equal to RDS(ON)_REV.
Additonally, the current into the logic has to be limited. The device includes a RVS resistor which limits the current
in the diodes. To avoid overcurrent in the RVS resistor, it is nevertheless recommended to use a RIN resistor. Please
refer to maximum current described in Chapter 4.1. Figure 20 shows a typical application. RSENSE is used to limit
the current in the sense transistor which behaves as a diode.
The recommended typical values for RIN is 4.7kΩ and for RSENSE 1kΩ.

-VBAT

RVS I RVS
VS
Z(A Z) GND

Rev. ON
Z(A Z)IS
Z(ESD )

OUT

-I L
IN IS GND
RIN
DOUT
RIS
IIN
controller
Micro-

-IIS -IGND
GND

Figure 20 Reverse Polarity Protection with External Components

5.3.6 Overload Protection

In case of overload, high inrush current or short circuit to ground, the BTS50015-1TMA offers several protection
mechanisms. Any protective switch OFF latches the output. To restart the device, it is necessary to set IN=LOW
for t > tIN(RESETDELAY). This behavior is known as latch behavior. Figure 21 gives a sketch of the situation.

5.3.6.1 Activation of the Switch into Short Circuit (Short circuit Type 1)
When the switch is activated into short circuit, the current will raise until reaching the IL(TRIP) value. After tOFF(TRIP),
the device will turn OFF and latches until the IN pin is set to low for t > tIN(RESETDELAY). An undervoltage shutdown
will not reset the latched fault overcurrent. For overload (short circuit or overtemperature), the maximum retry cycle
(ffault) under fault condition must be considered.

5.3.6.2 Short Circuit Appearance when the Device is already ON (Short circuit Type 2)
When the device is in ON state and a short circuit to ground appears at the output (SC2) with a overcurrent higher
than IL(TRIP) for a time longer than tOFF(TRIP), the device automatically turns OFF and latches until the IN pin is set
to low for t > tIN(RESETDELAY). An undervoltage shutdown will not reset the latched fault overcurrent.

Data Sheet 22 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.3.7 Temperature Limitation in the Power DMOS

The BTS50015-1TMA incorporates an abolute (TJ(TRIP)) temperature sensor. Activation of the sensor will cause an
overheated channel to switch OFF to prevent destruction. The device restarts when the IN pin is toggled and the
temperature has decreased below TJ(TRIP) - ΔTJ(TRIP). An undervoltage shutdown will not reset the fault over
temperature.

IN tIN(RESETDELAY)

IL t
tOFF(TRIP) tOFF(TRIP)
ICL(1)

ICL(0)

TJ t

TJ(TRIP)

TA
t
IIS

IIS(FAULT)

0
t
start

Input disable

Short Circuit 1
IIS (FAULT) disable

IIS (FAULT) disable

Input disable
Short Circuit 2

Overtemperature

IIS(F AULT) disable

Input disable

Figure 21 Overload Protection

The current sense exact signal timing can be found in the Chapter 5.4. It is represented here only for device’s
behavior understanding.

Data Sheet 23 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.4 Diagnostic Functions

For diagnosis purposes, the BTS50015-1TMA provides a combination of digital and analog signal at pin IS.

5.4.1 IS Pin
The BTS50015-1TMA provides an enhanced current sense signal called IIS at pin IS. As long as no “hard” failure
mode occurs (short curcuit to GND / overcurrent / overtemperature) and the condition VIS ≤ VOUT - 5V is fulfilled,
a proportional signal to the load current (ratio kILIS = IL / IS) is provided. The complete IS pin and diagnostic
mechanism is described in Figure 22. The accuracy of the sense current depends on temperature and load
current. In case of failure, a fixed IIS(FAULT) is provided. In order to enable the fault current reporting, the condition
VS - VOUT > 2V must be fulfilled. In order to get the fault current in the specified range, the condition VS - VIS ≥ 5V
must be fulfilled.

Vs

RVS

VS -V OUT>2V
FAULT
IIS(FAULT) IL / ∆k ILIS + IIS(OFFSET)
ZIS(AZ) &

IS 0

Figure 22 Diagnostic Block Diagram

5.4.2 SENSE Signal in Different Operation Mode

Table 5 Sense Signal, Function of Operation Mode1)

Operation mode Input Level Output Level VOUT Diagnostic Output (IS)2)
Normal operation LOW (OFF) ~ GND IIS(OFF)
Short circuit to GND GND Z
Overtemperature Z Z
Short circuit to VS VS Z
Open Load Z Z
Inverse current > VS Z
Normal operation HIGH (ON) ~ VS IIS = IL / ΔkILIS + IIS(OFFSET)
Overcurrent condition < VS IIS = IL / ΔkILIS + IIS(OFFSET)...IIS(FAULT)
Short circuit to GND ~ GND IIS(FAULT)
Overtemperature TJ(TRIP) event Z IIS(FAULT)
Short circuit to VS VS IIS = 0 ... IL / ΔkILIS + IIS(OFFSET)
Open Load ~ VS IIS0
Inverse current > VS Z
1) Z = High Impedance
2) See Chapter 5.4.3 for Current Sense Range and Improved Current Sense Accuracy

Data Sheet 24 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.4.3 SENSE Signal in the Nominal Current Range

Figure 23 and Figure 24 show the current sense as function of the load current in the power DMOS. Usually, a
pull-down resistor RIS is connected to the current sense pin IS. A typical value is 1kΩ. The blue curve represents
the typical sense current, assuming an typical ΔkILIS factor value. The range between the red and green curves
shows the sense accuracy the device is able to provide, at a defined current.

IL
I IS = ---------------
-+I with ( I IS ( OFFSET ) = ± I IS0 ( max ) ) (3)
Δk ILIS IS ( OFFSET )

Where the definition of ΔkILIS is:

I L – I L1
Δk ILIS = --------------------
-
I IS – I IS1 (4)

I IS
4
( mA ) IIS_max.
3.5 IIS_typ.
IIS_min.
3

2.5

2
I IS(OFFSET) range
1.5

0.5

0IL0 I L1 IL250 IL3 100 150

IL4 IL (A) 200

Figure 23 Current Sense for Nominal and Overload Condition

5.4.3.1 SENSE Signal Variation, Function of Temperature and Load Current

In some application, an enhanced accuracy is required around the device nominal current range IL(NOM). To
achieve this accuracy requirement, a calibration on the application is possible. With only one calibration point at a
given point (e.g. at IL1=20A; TJ=25°C), the BTS50015-1TMA will still have a limited IIS value spread at different
load current and temperature condition. This sense current spreading is described by the parameter ΔkILIS(OFFSET)
(Equation (5)). Figure 24 shows the behavior of the sense current, assuming one calibration point at IL=IL(CAL)

Data Sheet 25 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

(point (a) in Figure 24) and TJ = 25°C. IIS represents the sense current at load current IL. ΔkILIS(OFFSET) represents
the derating of the ΔkILIS over temperature and supply voltage range.
The blue line marked area indicates the spreading on the ΔkILIS parameter, which is defined as ΔkILIS(OFFSET),
assuming one calibration point, over temperature TJ and battery voltage VS range.

I L – I L ( CAL )
I IS = -------------------------------------------------------------------------
-+I ±I × ΔT (5)
Δk ILIS × ( 1 ± Δk ILIS ( OFFSET ) ) IS ( CAL ) IS ( OFFSET )

The area between the red and green lines indicates the ΔkILIS accuracy without calibration.

Figure 24 Improved Current Sense Accuracy with One Point Calibration for Nominal and Overload
The load current can be calculated out of the measured sense current with one calibration point.

I L = Δk ILIS × ( 1 ± Δk ILIS ( OFFSET ) ) × ( I IS – I IS ( CAL ) ± I IS ( OFFSET ) × ΔT ) + I L ( CAL ) (6)

Data Sheet 26 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Functional Description

5.4.3.2 SENSE Signal Timing

Figure 25 shows the timing during settling and disabling of the sense.

VIN tOF F <tIN (RESET DELAY) tOF F >tIN (RESET DELAY)

Short /
t
Overtemp.

VOUT t

IIS IIS (fault ) t

IIS 1.. 4
t
latch reset
no
reset

V IN VIN

t Short t
IL tO N
90% of circuit
IL s tatic

t VOUT t
V OUT 3V

I IS t s IS(O N) t t
90% of
tp IS (O N)_ 9 0 IIS IIS (fault )
IS s tatic t s IS(O N)_ J
IIS 1.. 4
t t
tp IS(FAU L T)

Figure 25 Fault Acknowledgement

5.4.3.3 SENSE Signal in Case of Short Circuit to VS

In case of a short circuit between OUT and VS pin, a major part of the load current will flow through the short circuit.
As a result, a lower current compared to the nominal operation will flow through the DMOS of the BTS50015-
1TMA, which can be recognized at the current sense signal.

5.4.3.4 SENSE Signal in Case of Over Load

An over load condition is defined by a current flowing out of the DMOS reaching the current over load ICL or the
junction temperature reaches the thermal shutdown temperature TJ(TRIP). Please refer to Chapter 5.3.6 for details.
In that case, the SENSE signal will be in the range of IIS(FAULT) when the IN pin stays HIGH.
This is a device with latch function. The state of the device will remain and the sense signal will remain on IIS(FAULT)
until a reset signal comes from the IN pin. For example, when a thermal shutdown happened, even the over
temperature condition was disappeared, the DMOS can only be reactivated when a reset signal is send to the IN
pin.

Data Sheet 27 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

6 Electrical characteristics BTS50015-1TMA

6.1 Electrical Characteristics Table

Table 6 Electrical Characteristics: BTS50015-1TMA

VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Operating and Standby Currents
Operating current (channel IGND – 1.2 3 mA VIN ≥ 2.2V 6.1.1
active)
Standby current for whole IS(OFF) – 7 18 μA VS = 18V 6.1.2
device with load at ambient VOUT = 0V
VIN ≤ 0.8V
TJ ≤ 85°C
See Figure 26
See Figure 27
Maximum standby current for IS(OFF) – 30 1000 μA VS = 18V 6.1.3
whole device with load at max VOUT = 0V
junction VIN ≤ 0.8V
TJ ≤ 150°C
See Figure 26
See Figure 27
Power Stage
1)
ON state resistance in RDS(ON) – 2.1 3 mΩ IL = 135A 6.1.4
forward condition VIN ≥ 2.2V
TJ = 150°C
See Figure 30
1)
ON state resistance in RDS(ON) – 5 10 mΩ IL = 20A 6.1.5
forward condition, Low VIN ≥ 2.2V
battery voltage VS = 5.5V
TJ = 150°C
See Figure 32
1)2)
ON state resistance in RDS(ON) – 1.5 – mΩ IL = 135A 6.1.6
forward condition VIN ≥ 2.2V
TJ = 25°C
See Figure 30
1)
ON state resistance in RDS(ON)_INV – 2.1 3.1 mΩ IL = -135A 6.1.7
inverse condition VIN ≥ 2.2V
TJ = 150°C
See Figure 10
1)2)
ON state resistance in RDS(ON)_INV – 1.5 – mΩ IL = -135A 6.1.8
inverse condition VIN ≥ 2.2V
TJ = 25°C
See Figure 10

Data Sheet 27 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Table 6 Electrical Characteristics: BTS50015-1TMA (cont’d)

VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Nominal load current IL(NOM) 33 39 – A TA = 85°C3) 6.1.9
TJ ≤ 150°C
Drain to source smart clamp VDS(CL) 28 – 56 V IDS = 50mA 6.1.11
voltage VDS(CL) = VS - VOUT TJ = 25°C
See Figure 38
Drain to source smart clamp VDS(CL) 30 – 60 V IDS = 50mA 6.1.12
voltage VDS(CL) = VS - VOUT TJ = 150°C
See Figure 38
Output leakage current at IL(OFF) – 3 15 μA VIN ≤ 0.8V
2)
6.1.13
ambient VOUT = 0V
TJ ≤ 85°C
Output leakage current at IL(OFF) – 30 1000 μA VIN ≤ 0.8V 6.1.14
max junction temperature VOUT = 0V
TJ = 150°C
Turn ON Slew rate dV/dtON 0.05 0.23 0.5 V/μs RL = 0.5Ω 6.1.15
VOUT = 25% to 50% VS VS = 13.5V
Turn OFF Slew rate -dV/dtOFF 0.05 0.25 0.55 V/μs See Figure 7 6.1.16
VOUT = 50% to 25% VS See Figure 32
See Figure 33
Turn ON time to tON – 220 700 μs 6.1.17
See Figure 34
VOUT = 90% VS
See Figure 35
Turn OFF time to tOFF – 300 700 μs 6.1.18
VOUT = 10% VS
Turn ON time to tON_delay – 80 150 μs 6.1.19
VOUT = 10% VS
Turn OFF time to tOFF_delay – 230 500 μs 6.1.20
VOUT = 90% VS
2)
Switch ON energy EON – 7 – mJ RL = 0.5Ω 6.1.21
VS = 13.5V
See Figure 36
2)
Switch OFF energy EOFF – 5 – mJ RL = 0.5Ω 6.1.22
VS = 13.5V
See Figure 37

Data Sheet 28 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Table 6 Electrical Characteristics: BTS50015-1TMA (cont’d)

VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Input Pin
LOW level input voltage VIN(L) – – 0.8 V See Figure 40 6.1.23
HIGH level input voltage VIN(H) 2.2 – – V See Figure 41 6.1.24
2)
Input voltage hysteresis VIN(HYS) – 200 – mV 6.1.25
LOW level input current IIN(L) 8 – – μA VIN = 0.8V 6.1.26
HIGH level input current IIN(H) – – 80 μA VIN ≥ 2.2V 6.1.27
Protection: Loss of ground
2)4)
Output leakage current while IOUT(GND_M) 0 30 1000 μA VS = 18V 6.1.28
module GND disconnected VOUT = 0V
IS & IN pins open
GND pin open
TJ = 150°C
See Figure 15
Output leakage current while IOUT(GND) 0 30 1000 μA VS = 18V 6.1.29
device GND disconnected GND pin open
VIN ≥ 2.2V
1kΩ pull down
from IS to GND
4.7kΩ to IN pin
TJ = 150°C
See Figure 15
See Figure 42
Protection: Reverse polarity
1)
ON state resistance in RDS(ON)_REV – – 3.2 mΩ VS = 0V 6.1.30
Infineon® Reversave VGND =VIN =16V
IL = -20A
TJ = 150°C
See Figure 20
1)2)
ON state resistance in RDS(ON)_REV – 1.5 – mΩ VS = 0V 6.1.31
Infineon® Reversave VGND =VIN =16V
IL = -20A
TJ = 25°C
See Figure 45
Integrated resistor RVS – 60 90 Ω TJ = 25°C 6.1.32

Data Sheet 29 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Table 6 Electrical Characteristics: BTS50015-1TMA (cont’d)

VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Protection: Overvoltage
Overvoltage protection VS(AZ)_GND 64 70 80 V See Figure 19 6.1.33
GND pin to VS See Figure 39
Overvoltage protection VS(AZ)_IS 64 70 80 V GND and IN pin 6.1.34
IS pin to VS open
See Figure 19
See Figure 39
Protection: Overload
Current trip detection level ICL(0) 135 175 – A VS = 13.5V, static 6.1.35
TJ = 150°C
See Figure 21
ICL(0) 145 185 – A VS = 13.5V, static
TJ = -40...25°C
See Figure 21
2)
Current trip maximum level ICL(1) – 190 250 A VS = 13.5V
dIL/dt = 1A/μs
See Figure 43
2)
Overload shutdown delay tOFF(TRIP) – 12 – μs 6.1.36
time
Thermal shutdown TJ(TRIP) 150 1702) 2002) °C See Figure 21 6.1.37
temperature
Thermal shutdown hysteresis ΔTJ(TRIP) – 10 – K 2)
6.1.38
Diagnostic Function: Sense pin
Sense signal current in fault IIS(FAULT) 4 6 8 mA VIN = 4.5V 6.1.40
condition VS - VIS ≥ 5V
Diagnostic Function: Current sense ratio signal in the nominal area, stable current load condition
Current sense ratio ΔkILIS_20_135 43700 51500 58200 – IL = 135A 6.1.41
IL1 = 20A
See Equation (4)
Current sense IIS0 – 1 250 μA VIN ≥ 2.2V 6.1.42
IL = IL0 = 50mA VS - VIS ≥ 5V
Current sense IIS1 95 385 710 μA See Figure 23 6.1.43
IL = IL1 = 20A
Current sense IIS2 435 775 1165 μA 6.1.44
IL = IL2 = 40A
Current sense IIS3 1.125 1.55 2.08 mA 6.1.45
IL = IL3 = 80A
Current sense IIS4 2.07 2.60 3.34 mA 6.1.46
IL = IL4 = 135A

Data Sheet 30 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Table 6 Electrical Characteristics: BTS50015-1TMA (cont’d)

VS = 8 V to 18 V, Tj = -40°C to +150°C (unless otherwise specified)
For a given temperature or voltage range, typical values are specified at VS = 13.5V, TJ = 25°C
Parameter Symbol Values Unit Note / Number
Min. Typ. Max. Test Condition
Current sense ratio spreading |ΔkILIS(OFFSET)| – 8 – % 2)
See Figure 24 6.1.47
over current and temperature
with one calibration point on
IL1 = 20A
2)
Current sense offset with one |IIS(OFFSET)| – 0.5 – μA/K 6.1.54
calibration point on IL1 = 20A
Diagnostic Function: Diagnostic timing in normal condition
Current sense propagation tpIS(ON)_90 0 – 700 μs VIN ≥ 2.2V 6.1.48
time until 90% of IIS stable VS = 13.5V
after positive input slope on RL = 0.5Ω
IN pin See Figure 25
Current sense settling time to tsIS(ON) – – 3000 μs VIN ≥ 2.2V 6.1.49
IIS stable after positive input VS = 13.5V
slope on IN pin RL = 0.5Ω
See Figure 25
IIS leakage current when IN IIS(OFF) 0 0.05 1 μA VIN ≤ 0.8V 6.1.50
disabled RIS =1kΩ
Current sense propagation tsIS(ON)_J – 350 – μs 2)
VIN ≥ 2.2V 6.1.51
time after load jump during dIL/dt = 0.4A/μs
ON condition
Diagnostic Function: Diagnostic timing in overload condition
Current sense propagation tpIS(FAULT) 0 – 100 μs 2)
VIN ≥ 2.2V 6.1.52
time for short circuit detection from VOUT= VS-3V
to IIS(FAULT)_min
See Figure 25
2)
Delay time to reset fault tIN(RESETDELAY) 250 1000 1500 μs 6.1.53
signal at IS pin after turning
OFF VIN
Timing: Inverse Behavior
2)
Propagation time from tp,INV,noFAULT – 4 – μs See Figure 11 6.1.55
VOUT > VS to fault disable
2)
Propagation time from tp,noINV,FAULT – 10 – μs See Figure 11 6.1.56
VOUT < VS to fault enable
1) Only valid for minimum distance between package and PCB. Electrical connection between Tab and VS required otherwise
additional 0.8mΩ must be added. For electrical connection at the End of the OUT leads, additional lead resistance of 0.2mΩ
must be added.
2) Not subject to production test, specified by design
3) Value is calculated from the parameters typ. RthJA(2s2p), with 65K temperature increase, typ. and max. RDS(ON)
4) All pins are disconnected except VS and OUT

Data Sheet 31 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

6.2 General Product Characteristics

Typical Performance Characteristics

Figure 26 Standby Current for Whole Device with Figure 27 Standby Current for Whole Device with
Load, IS(OFF) = f(VS, TJ) Load, IS(OFF) = f(TJ) at VS = 13.5V
40
-40 °C 30
0°C
35 25 °C
85 °C 25
30 100 °C
125 °C
150 °C
20
25
IS(O FF) [µA]

I S(OFF) [µA]

20
15

15
10
10

5
5

0 0
0 10 20 30 -40 -20 0 20 40 60 80 100 120 140 160
o
V S [V] T J [ C]

Figure 28 GND Leakage Current Figure 29 GND Leakage Current

IGND(OFF) = f(VS, TJ) IGND(OFF) = f(TJ) at VS = 13.5V
4
4

3.5
3.5

3 3

2.5
IGND(OFF) [µA]

2.5
I GND(OFF) [µA]

2 2

1.5 1.5
-40 °C

1
0°C 1
25 °C
85 °C
100 °C
0.5
0.5
125 °C
150 °C 0
0
-40 -20 0 20 40 60 80 100 120 140 160
0 5 10 15 20 25 30
o
V S [V] T J [ C]

Data Sheet 32 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Figure 30 ON State Resistance Figure 31 ON State Resistance

RDS(ON) = f(VS, TJ), IL = 20A ... 135A RDS(ON) = f(TJ),VS = 13.5V,IL = 20A...135A
5
2.5
4.5 -40°C
25°C
4
150°C 2
3.5
RDS(ON) [mΩ]

R DS(ON) [mΩ]
1.5

2.5

2 1

1.5

1 0.5

0.5

0 0
5 7 9 11 13 15 -40 -20 0 20 40 60 80 100 120 140 160

V S [V] T J [°C]
Figure 32 Turn ON Time Figure 33 Turn OFF Time
tON = f(VS, TJ), RL = 0.5Ω tOFF = f(VS, TJ), RL = 0.5Ω
1200 450

400
-40°C
1000
25°C 350 -40°C
150°C
25°C
800 300
150°C

250
t ON [µs]

tOFF [µs]

600
200

400 150

100
200
50

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

V S [V] V S [V]

Data Sheet 33 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Figure 34 Slew Rate at Turn ON Figure 35 Slew Rate at Turn OFF

dV / tON = f(VS, TJ), RL = 0.5Ω dV / tOFF = f(VS, TJ), RL = 0.5Ω
0.9
0.9

0.8 -40°C 0.8 -40°C

25°C
0.7 25°C
150°C 0.7
150°C
0.6
0.6
dV/dt ON [V/µs]

dV/dt OFF [V/µs]

0.5 0.5

0.4 0.4

0.3 0.3

0.2 0.2

0.1 0.1

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

V S [V] V S [V]

Figure 36 Switch ON Energy Figure 37 Switch OFF Energy

EON = f(VS, TJ), RL = 0.5Ω EOFF = f(VS, TJ), RL = 0.5Ω
40 40

35 35 -40°C
-40°C
25°C 25°C
30 30 150°C
150°C

25 25
E ON [mJ]

E OFF [mJ]

20 20

15 15

10 10

5 5

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

V S [V] V S [V]

Data Sheet 34 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Figure 38 Drain to Source Clamp Voltage Figure 39 Overvoltage Protection

VDS(CL) = f(TJ), IL = 50mA VS(AZ)_GND = f(TJ), VS(AZ)_IS = f(TJ)

44 80

78
42
76

V S(AZ)_GND, V S(AZ)_IS [V]

40 74

72
V DS(CL) [V]

38
70
36
68

34 66

64
32
62

30 60
-40 -20 0 20 40 60 80 100 120 140 160 -40 -20 0 20 40 60 80 100 120 140 160

T J [°C] T J [°C]

Figure 40 LOW Level Input Voltage Figure 41 HIGH Level Input Voltage
VIN(L) = f(VS, TJ) VIN(H) = f(VS, TJ)

1.8 1.8

1.6 1.6

1.4 1.4

1.2 1.2
V IN(L) [V]

V IN(H) [V]

1 1

0.8 0.8

0.6 0.6
-40°C -40°C
0.4 25°C 25°C
0.4
150°C 150°C
0.2 0.2

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
V S [V] V S [V]

Data Sheet 35 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Figure 42 Output Leakage Current while Device Figure 43 Overload Detection Current
GND Disconnected, IOUT(GND) = f(VS, TJ) ICL(1) = f(dIL/dt, TJ), VS = 13.5V

25
400

-40°C 350
20 25°C
150°C 300
IOUT(GND) [µA]

15 250

ICL(1) [A]
200
-40°C
10 25°C
150 150°C

100
5
50

0 0
0 5 10 15 20 25 30 0 2 4 6 8 10
V S [V] dI L/dt [A/µs]

Figure 44 Resistance in Reversave Figure 45 Resistance in Reversave

RDS(ON)_REV = f(VS, TJ), IL = -120A RDS(ON)_REV = f(VS, TJ), IL = -20A

16
16

14
14 -40°C
-40°C
25°C
25°C
12 150°C
12
150°C

10
RD S(ON )_R EV [mΩ]
RDS(ON)_REV [mΩ]

10

8 8

6 6

4 4

2 2

0
0
4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18
VS [V] V S [V]

Data Sheet 36 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Electrical characteristics BTS50015-1TMA

Figure 46 Input Current IIN = f(TJ) Figure 47 Input Current IIN = f(VIN, TJ)
VS = 13.5V; VIN(L) = 0.8V; VIN(H) = 5.0V VS =13.5V

60
60

IIN(L)
50
50
IIN(H)

40 40
IIN [µA]

IIN [µA]
30 30

20 -40°C
20
25°C
150°C
10 10

0 0
-40 -20 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14
TJ [°C] VIN [V]

Figure 48 GND current IGND = f(VS, TJ)

VIN = 2.2V

1.6

1.4

1.2

1.0
-40°C
I GND [mA]

25°C
0.8
150°C
0.6

0.4

0.2

0.0
4 8 12 16 20 24 28

V S [V]

Data Sheet 37 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Package Outlines

7 Package Outlines

10 ±0.2
A
9.9 ±0.2 4.4

3.7-0.15
2.8 ±0.2
8.5 1) 1.27 ±0.1

9.25 ±0.2
12.95 1)
15.65 ±0.3

0...0.3
17 ±0.3

1.6 ±0.3
8.6 ±0.3
0.05

10.2 ±0.3

3.7 ±0.3
C
0.5 ±0.1
7 x 0.6 ±0.1
0...0.15 2.4
6 x 1.27 3.9 ±0.4
0.25 M A C 8.4 ±0.4

1) Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
PG-TO220-7-232-PO V01 Dimensions in mm

Figure 49 PG-TO-220-7-232 (RoHS-Compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages.

Data Sheet 38 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Application Information

8 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.

V BAT

R/L cable

VDD
CVS

Vdd_p Vs
Module
OUT IN ground
RIN

Za

CIN OUT
XC2x
(P11_MR)
R/L cable
Zb
R SENSE
P5.x (A/D) IS COUT
GND

CSENSE RIS
R/C Load

Vss

Module ground

Figure 50 Application Diagram with BTS50015-1TMA driving R/C loads

Note: This is a very simplified example of an application circuit. The function must be verified in the real application.

Table 7 Bill of material

Reference Value Purpose
RIN 4.7kΩ Protection of the microcontroller during overvoltage, reverse polarity
allows BTS50015-1TMA channels OFF during loss of ground
RIS 1kΩ Sense resistor
RSENSE 4.7kΩ Protection of the microcontroller during overvoltage
Protection of the BTS50015-1TMA during reverse polarity
Za Zener diode Protection of BTS50015-1TMA during loss of load with primary charged
inductance, see Chapter 5.3.2
Zb Zener diode Protection of BTS50015-1TMA during loss of battery or against negative huge
pulses at OUT (like ISO pulse 1), see Chapter 5.3.2
CSENSE 10nF Sense signal filtering
CVS 100nF Improved EMC behavior (in layout, pls. place close to the pins)
COUT 10nF Improved EMC behavior (in layout, pls. place close to the pins)
CIN 150nF BTS50015-1TMA tends to latched switch-off due to short negative transients
on supply pin; CIN automatically resets the device

Data Sheet 39 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Application Information

VBAT

R/L cable

V DD
CVS

Vdd_p Vs Options for free wheeling

Module path of inductive load
OUT IN ground
RIN
Option Option
Za A B

CIN OUT
XC2x
(P11_MR)
Zb R/L cable
Z1 Z1
R SENSE
IS COUT Z2
P5.x (A/D) GND

CSENSE RIS inductive load

T1

S
Optional :
Vss MOSFET to block

G
reverse current

D
Module ground

Figure 51 Application Diagram with BTS50015-1TMA driving inductive loads

Note: This is a very simplified example of an application circuit. The function must be verified in the real application.

Table 8 Bill of material

Reference Value Purpose
RIN 4.7kΩ Protection of the microcontroller during overvoltage, reverse polarity
allows BTS50015-1TMA channels OFF during loss of ground
RIS 1kΩ Sense resistor
RSENSE 4.7kΩ Protection of the microcontroller during overvoltage
Protection of the BTS50015-1TMA during reverse polarity
Za Zener diode Protection of BTS50015-1TMA during loss of load with primary
charged inductance, see Chapter 5.3.2
Zb Zener diode Protection of BTS50015-1TMA during loss of battery or against
negative huge pulses at OUT (like ISO pulse 1), see Chapter 5.3.2
Z1 Schottky diode Protection of the BTS50015-1TMA when driving an inductive load. Z2
Z2 Zener Transient Suppressor is added in option A to demagnetize more quickly the inductance
associated with the cable. Only one of the two possible options A and
B should be implemented
T1 n-channel MOSFET Optional. It can be added to block reverse current in protection diodes.
CSENSE 10nF Sense signal filtering
CVS 100nF Improved EMC behavior (in layout, pls. place close to the pins)
COUT 10nF Improved EMC behavior (in layout, pls. place close to the pins)
CIN 150nF BTS50015-1TMA tends to latched switch-off due to short negative
transients on supply pin; CIN automatically resets the device

Data Sheet 40 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Application Information

8.1 Further Application Information

• Please contact us for information regarding the pin FMEA

• For further information you may contact http://www.infineon.com/

Data Sheet 41 Rev. 1.1, 2012-06-14

 BTS50015-1TMA

Revision History

9 Revision History

Revision Date Changes

1.1 2012-06-14 Page 4, in the first bullet point, “inductive” deleted
Table 1 on Page 5, eighth row, “TA = 85°C” changed into “TA =TJ= 85°C”
Table 1 on Page 5, ninth row, “TA = 85°C” changed into “TA = 25°C”
Table 2, Page 10 : parameter 4.1.13 removed
Table 2, Page 10: parameter 4.1.14 removed
Table 2, Page 10: parameter name 4.1.15 corrected (typing error present in
previous release)
Page 10, footnote 8) removed (refer to Rev. 1.0)
Figure 4 “” on Page 11 modified
Figure 5 “” on Page 11 EAR curve removed
Page 12, figure 6 removed (refer to Rev. 1.0)
Chapter 5.1.3.2,Page 16, last sentence added (“If the application requires the
inductive load to be switched on/off repetitively, the recommendation in Chapter 8
must be followed”)
Figure 14 “” on Page 19 modified
Chapter 5.3.2, Page 20,third and fourth sentences modified, from “In case of loss
of VS” to “...as shown in Figure 17”.
Figure 16 “” on Page 20 modified
Figure 17 “” on Page 20 modified
Chapter 5.3.4, Page 21, third row, parameter EAR deleted
Table 6, Page 29, parameter 6.1.23, value indicated as minimum is actually
maximum
Table 6, Page 29, parameter 6.1.24, value indicated as maximum is actually
minimum
Table 6, Page 30, in the description of the parameter 6.1.40, word “maximum”
deleted
Figure 50 “” on Page 39 modified
Figure 50 “” on Page 39, “driving R/C loads” added in the caption and “TAA”
corrected as TMA
Table 7 on Page 39, fifth row deleted (refer to Rev. 1.0)
Table 7 on Page 39, two rows added (describing Za and Zb)
Figure 51 “” on Page 40 added
Page 40 Note: “This represents only a recommendation for driving inductive
loads. The function must be verified in the real application.” added
Table 8 on Page 40 added
1.0 2011-11-16 Datasheet released

Data Sheet 41 Rev. 1.1, 2012-06-14

Edition 2012-06-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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