TABLE OF CONTENTS Unit I Chapter - 1 MOSFE and its Analysis: (1 1.1 Introduction... 1.2. Enhancement MOSFET ..... 1.3 Nonideal Current Voltage Characteristics... 1.4 W/LRatio.... 1.5 MOSFET DC Analysis .. 1.6 MOSFET Amplifier - Graphical and Load Line Analysis ............. 1.7. Small Signal Parameters C3 ma 1.8 AC Equivalent Circt 1.9 Small Signal Equivalent Circuit..... 1.10 Modeling the Body Effect .. 1.11 Analysis of CS Amplifier . 1.12 Analysis of CD (Source Follower) Amplifier... Qy 1.13 Comparison between Common Source and Source Follower Amplifiers... 1.14 Frequency Response for Amplifier ‘Chapter-2 MOSFET Circuits (2-1) to @- 13) 2.1 MOSFET as Switch, Diode/Active Resistor... 2.2. CMOS Inverter . 2.3. MOSFET Current Sink and Source... )2-6 2.4 MOSFET Current Mirror se Chapter - 3 Feedback Amplifiers (3 - 1) to (3- 28) 3.1 Introduction... 3.2. Four Types of Amplifiers... 3.3. Negative Feedback Amplifier orn. 3.4 Feedback Topologies... 3.5. Effect of Feedback on Terminal Characteristics of Amplifiers .....3 - 8 3.6 Voltage Series and Current Series Feedback Amplifiers and Analysis Unit I ee =e Chapter - 4 Voltage Regulators (4-1) to (4 - 20) 4.1 Block Diagram of D.C. Regulated Power Supply ... 4.2. Block Diagram of Three Terminal Voltage Regulator ... 4.3 Voltage Regulator IC 317 and IC 337 4.4 Low Dropout Regulator (LDO) ... 4.5, Block Diagram of Switched Mode Power Supply (SMPS) . 4.6. Buck (Step Down) Switching Regulator ..... 4.7 Boost (Step Up) Switching Regulator .... 4.8 Comparison of SMPS and Linear Regulator ..... ee ee ee Chapter - 5 Operational Amplifier (5 - 1) to (5 - 35) 5.1 Block Diagram of IC Op-amp.. 5.2 Basics of Differential Amplifier ... 5.3 Transistorised Differential Amplifier. (i)5.4 Configurations of Differential Amplifier ..... 5.5. D.C. Analysis of Differential Amplifier....... 5.6 A.C. Analysis of Differential Amplifier........csserrereresesesereeeS = 11 5.7 Differential Amplifier with Constant Current SOUFCE.....-.sss+005 = 15 5.8 Current Mirror Circuit... 5.9 Level Shifters... 5.10 Ideal Op-amp Characteristics... 5.11 Practical Op-amp Characteristics 5.12 Feedback Configurations using Op-amp... 5.13. Voltage Series Feedback Amplifier... 5.14 Voltage Shunt Feedback Amplifier. 5.15 Comparison between Series and Shunt Feedback Amplifiers a 5-34 rackicul Inte Unit Schmitt rl Pre Wales Chapter - 6 Op-amp Applications (6 - 1) to (6 - 36) 6.1. Realistic Simplifying Assumptions... 6.2 Ideal Inverting Amplifier .. 6.3 Ideal Noninverting Amplifier. 6.4 Voltage Follower or Unity Gain Amplifier. 6.5 Summing Amplifier or Adder Circuit 6.6 Differential Amplifier or Subtracter..... 6.7. Practical Integrator .. 6.8 Practical Differentiator .... 6.9 Instrumentation Amplifier .. 6.10 Comparatoi 6.11 Schmitt Trigger (Regenerative Comparator) Oe (vil)6.12 Square Wave Generator...... 6.13 Triangular Wave Generator 16} Bose EM > Un: DAC —— Chapter - 7 Converters and PLL (7 - 1) to (7 - 4] 7.1 Voltage to Current Converter ... 7.2 Current to Voltage Converter... 7.3 DAC (Digital to Analog Converter) ..... 7.4 Types of DAC.... 7.5 Specifications of DAC.. 7.6 Applications of DAC.......... 7:7 ADC (Analog to Digital Converter) 7.8 Types of ADC, 7.9. Specifications of ADC 7.10 PLL: Introduction. 7.11 Block Diagram of PLL 7.12. Characteristics and Parameters of PLL. 7.13. Applications of PLL 7.14 PLLICS6S.. — Solved Model Question Paper (M - 1) to(M-2 Solved SPPU Question Paper (S-1) to (S-7 PLU? Phase lecdeul lp (uli)4 , a a 3 3 ai Unit | MOSFETs and its Analysis Q.1 What is MOSFET ? Ans. : © MOSFET (Metal Oxide Semiconductor Field Effect Transistor). yi is a second category of field effect transistor. \° The. MOSFETs, compared to BJTs, can be made very small and hence can be used to design high density VLSI circuits. The MOSFET differs from the JFET in that it has no p-n junction structure; instead, the gate of the MOSFET is insulated from the channel by a ‘silicon dioxide (SiO) layer. Due to. this the input resistance of MOSFET is greater than JFET. Because of the insulated gate, MOSFETs are also called IGFETs. * MOSFET is a’ voltage controlled device. Input voltage Vcs controls drain current Ip. * In MOSFET current flows only due to majority carriers and hence it is unipolar device. Types of MOSFET The two basic types of MOSFETs are : = Depletion (D) MOSFET and = Enhancement (E) MOSFET. Enhancement MOSFET Q.2 Explain the construction of n-channel Enhancement MOSFET. Ams,:¢ Fig. Q.2.1 shows the basic construction of n-channel enhancement type MOSFET. = es a-)Electronic Circuits 1-25 MOSFETs and its Analy, sio, _)-doped region Metalic one s Substrate te oSS sn Substrate 8 h- doped region (Source) Fig. Q.2.1 n-channel enhancement type MOSFET © Two highly doped n-regions are diffused into a lightly doped p-typ substrate. The source and drain are taken out through metallic contacts to n-doped regions as shown in the Fig. Q.2.1. The channel between two n-regions is absent in the enhancement typ. MOSFET. The SiO; layer is still present to isolate the gate metallic platform from the region between the drain and source, but now it i simply separated from a section of the p-type material. © It differs in construction from the depletion MOSFET in that it has no physical channel. Q.3 Explain the construction of p-channel Enhancement MOSFET. Ams. : ¢ Fig.Q.3.1 shows the basic construction of p-channel enhancement type MOSFET. © Like, depletion type MOSFET, two highly doped p-regions are diffused into a lightly doped n-type substrate, The source and drain are taken out through metallic contacts to p-doped regions as shown in thé Fig. Q3.1. © The channel between two p-regions is absent in the enhancement type MOSFET. The SiO; layer is still present to isolate the gate metalli¢ rr ——— A Gulde for Engineering Student ape ue 6 Electronic Circuits 1-3 MOSFETs and its Analysis (Drain) D No channel Metal Contacts Go oSS (Gate) \a substrate (Substrate) (source) p-doped region Fig. Q.3.1 Construction of p-channel enhancement type MOSFET platform from the region between the drain and source, but now it is simply separated from a section of the n-type material. © It differs in construction from the depletion MOSFET in that it has no physical channel. . Q4 Explain the Operation of n-channel Enhancement MOSFET. i ‘Ans. : © This type of MOSFET operates only in the enhancement mode and has'no depletion mode. * Ves =0 : On application of drain to source voltage Vps and keeping gate to source voltage zero by directly connecting gate terminal to the source terminal, practically zero current flows, quite different from the depletion type MOSFET. * Ves >0 : If we increase magnitude of Vcg in the positive direction, the concentration of electrons near the SiO, surface increases. At a particular value of Vgg there is a measurable current flow between drain and source: This minimum value of Vgs at which Ip starts flowing is called threshold voltage denoted by Vy. ¢ Thus we can say that in an enhancement type n-channel MOSFET, a Positive gate voltage above a threshold value induces a channel and hence the drain current by creating a thin layer of negative charges in ‘A Guide for Engineering StudentsElectronic Circuits 1-4 MOSFETS and its Anatysy Electrons attracted to positive gate ,Region depleted of (Induced n - channel) p- type carriers (holes) Insulating layer Holes repelled (SiO,) by positive gate Fig. Q.4.1 Channel formation in the n-channel enhancement type MOSFET the ‘substrate region adjacent to the SiO, layer, as shown in the Fig. Q.4.1. © The conductivity of the channel is enhanced by increasing the gate to source voltage and thus pulling more electrons into the channel. For any voltage below the threshold value, there is no channel. Since the channel does not exist with Vgg = 0 V and “enhanced” by the application of a positive gate to source voltage, this type of MOSFET is called an enhancement type MOSFET. Q,5 Explain the Operation of p-channel Enhancement MOSFET. Ans. : © This type of MOSFET operates only in the enhancement mode and has no depletion mode. * Vos = 0 : On application of drain to source voltage Vps and keeping gate to source voltage zero by directly connecting gate terminal to the source terminal, practically zero current flows, quite different from the depletion type MOSFET. © Vos < 0 : If we increase magnitude of Vos in the negative direction, the concentration of holes near the SiO; surface increases, At a : = A Gulde for Engineering StudentsElectronic Circuits 1-5 MOSFETs and its Analysis particular value of Vgs there is a measurable current flow between drain and source. This minimum value of Vos at which Ip starts flowing is called threshold voltage denoted by Vr. Thus we can say that in an enhancement type p-channel MOSFET, a negative gate voltage above a threshold value induces a channel and hence the drain curfent by creating a thin layer of positive charges in the substrate region adjacent to the SiO, layer. Q.6 Give the Symbols for n and p-channel Enhancement MOSFET. Ans. : Fig, Q.6.1 shows graphic symbols for n and p-channel enhancement type MOSFET. D D SG ss tS ss Ss Ss Conventional symbol : (n-channel) Conventional symbol : (p-channel) Do Do G G s s Simplified symbol : (n-channel) Simplified symbol : (p-channel) (a) Symbols for n-channel (b) Symbols for p-channel enhancement type MOSFETs enhancement type MOSFETs Fig. Q.6.1 E-MOSFET symbols Q7 Draw and explain the V-I characteristics for n-channel EMOSFET and show operating regions. 03 [SPPU : May-19, Marks 7] Ans. ; ¢ Fig, Q.7.1 (a) and (b) show transfer and drain characteristics for n-channel enhancement-type MOSFET, respectively. © The drain characteristics of a MOSFET are drawn between the drain current Ip and the drain source voltage Vps. Typical drain ‘A Guide for Engineering StudentsElectronic Circuits 1-6 MOSFETS and its Anatysig characteristics, for various levels of gate-source voltage, of an n-channel MOSFET are shown in Fig. Q.7.1 (b)- © Looking at Fig. Q.7.1 (b) we can say that as VGs increases beyond the threshold level, the density of free carriers (electrons) in the induce channel increases, increasing the drain current. ¢ However, at some point of Vps, for constant VGs, the drain current reaches a saturation level. The value of Vps at this point is known as pinch-off voltage (Vp). Fig. Q7.1 (@) shows the transfer characteristic for n-channel enhancement type MOSFET. For an n-channel enhancement type MOSFET it is totally in the Positive VGs region and as we know Ip does not flow until Vos ny = Vr- * The relation between drain current and Vos is given by following equation Ip=K(Vcs~Vz). K is a constant and it depends on the particular MOSFET. ¢ This relation is nonlinear and valid for Vos > Vz. Enhancement ‘mode Nog*#4V) fos vege s3V, “ » . in and transfer characteristics for n-channel Fig. Q.7-1 Drain hancomenttype MOSFET A Guide for Engineering StudentsElectronic Circuits 1-7 MOSFETs and its Analysis Q.8 Draw the drain and transfer characteristics of P-channel EMOSFET and show operating regions. Ans.:¢ Fig. Q.8.1 (b) shows the drain characteristics of p-channel enhancement type MOSFET. Here, drain current increases with increase in the negative gate to source (Vgg) voltage, © Fig. Q8.1 (a) shows the transfer characteristics of p-channel enhancement type MOSFET. In the p-channel enhancement type MOSFET, the transfer characteristic is a mirror image about the Ip axis (y axis) of the transfer characteristics of n-channel depletion type MOSFET, since the Vg is negative. Fo (a) (@) Fig. Q.8.1. Drain and transfer characteristics for p-channel enhancement-type MOSFET Q.9 State and explain various operating region of EMOSFET. Ans. : As evident from characteristics curves, an E-MOSFET has three operating regions : = Cut-off region = Linear/ohmic/ triode/ non-saturation region = Saturation region. 1, Cut-off region : With Vos < Vz the gate-source voltage is much lower than the MOSFET threshold voltage, so the MOSFET is A Guide for Engineering Students*\V ps eat) = gs Up Electronic Circuits MOSFETs and its Analysis switched OFF. Thus Ip = 0 and MOSFET acts as an open switch regardless of the value of Vps. 2. Linear/ohmic/triode/non-saturation region : With Vgs > Vy and Vps < Vpsisat) Where Vpsisat) = Vos ~ Vr» the MOSFET is in its constant resistance region behaving as a voltage controlled resistance whose resistive value is determined by thé gate voltage, Ves level. The region for which Vos < Vpgisat) is also known as the triode or non-saturation region. The ideal current-voltage chracteristics in this region are described by the equation. . Ip = Kal2(Vgs -Vz Vps -V7ps] 3. Saturation region : With Vgs>Vz and Vps >.Vps(sat) » the incremental channel conductance at the drain is zero and MOSFET is in its constant current region. This, region of Ip versus Vps characteristic is referred to as the saturation region. In this region, the ideal current-voltage characteristics for Vos > Vr are described by the equation. Ip = K(Vos -Vr)? Q.10 For n-channel MOSFET, Vzy = 1 V, Ip = 0.8 mA when Vcs = 3 V and Vy¢s = 4.5 V. Calculate the Ip when a) Vos =2 V, Vps = 4.5 V and b) Ves = 3 V, Vps =1V- Ans. : Given data : Vy = 1V, Vog = 3 V and Vps = 4.5 V Since Vps >Vos -Vry [4.5 > (3-1)] we can calculate Ky as = ——B__, = 8 = 0.2 mA/ V2 (Ves -Vin)° (3-1) a) At Veg = 2 Vand Vps = 4.5 V, Vps > Vos -Vin [45 >(2-1)]} Thus, we have, Ip = Kn (Ves ~Vru)? = 022-1)? 0.2 mA A Guide for Engineering Students 7Electrontc Circuits 1-9 MOSFETs and its Analysis b) At Ves = 3 V and Vpg = 1 V, Vos < Ves -VIN [I< 3-1], Thus we have 2 Ip = Kgl2(Ves -Vz )Vps -V vs! 0.2[2(3-1)1- 1] = 0.6 mA Q.11 Consider an enhancement-mode p-channel MOSFET for which Ky = 0.2 mA/V?. Vzp = 0.50 V and Ip = 0.50 mA. Determine the source-to-drain voltage required to bias a p-channel enhancement-mode MOSFET in the saturation region. Solution : In the saturation region, the drain current is given by Ip = Kp(vsc + Vip)? Substituting given values we have 0.50 = 0.2(vgg - 0.50)? Therefore, vgg = 2.08 V To bias this p-channel MOSFET in the saturation region, the following must apply : Ysp > Vspisat) = Vso + Vp = 2.08 - 0.5 = 1.58 V Important Concept Biasing a transistor in either the saturation or the nonsaturation region depends on both the gate-to-source voltage and the drain-to source voltage. 0 1,3 : Nonideal Current Voltage Characteristics Q.12 List various nonideal current-voltage characteristics and MOSFET. Ans. : In practice, the current-voltage characteristics of MOSFET have five nonideal effects. These are : «= Finite output resistance = Body effect = Subthreshold conduction 7 ; ‘A Guide for Engineering StudentsElectronic Circuits 1-10 MOSFETs and Its Analysy, = Breakdown effects and = Temperature effects. ]Q.13 Explain the finite output resistance non-ideal characteristics of MOSFET. USP [SPPU : May-10,13,14,15,16,18, eens Marks 41 Ans. : ¢ In ideal case, when a MOSFET is biased in the saturation "salon, the drain current, Ip is independent of drain-to-source voltage, Vg, Therefore, output resistance or drain resistance. V gg= constant tance due to channel length modulation Fig. Q.13.1 A Guide for Engineering StudentsElectronic Circults 1-1 MOSFETs and its Analysis © However, in practice, the Ip is slightly dependent on the drain to source voltage, Vpg. This can be observed on Ip versus Vpg. characteristics where a nonzero slope does exists beyond the saturation point. Refer Fig, Q.13.1 (b). k ‘eFor Vps>Vpg(saty» the actual point in the channel at which the + inversion charge goes to zero moves away from the drain terminal. © The effective channel length decreases, and hence the slope exists in the saturation region of V-I characteristics. © This slope of the curve in the saturation region can be described by — expressing the Ip versus Vps characteristics in the form, for an n-channel device, 2 Ip = KI(Vos -Vr)’ (1+%Vps)] w (Q.13.1) where 2 is a positive quantity called the channel length modulation parameter. As shown in the exaggerated view of V-I characteristics, the curves can be extrapolated to get intercept to voltage axis at a point Vpg =-Va. The voltage Vq is usually defined as a positive quantity and is similar to the early voltage of a bipolar transistor. The parameter 4 and Va can be related. From equation (Q.13.1) we have (1+2Vpg) = 0 at the extrapolated point where Ip =0. At the point, Vpg =- Vy. Therefore, 142(-Va) =0 1 va =i ar’ The output resistance 1, due to the channel length modulation is defined = 2Vps dp Vics = constant ‘A Guide for Engineering StudentsElectronic Circuits 1-12 MOSFETS and its Anatyy, We can evaluate the output resistance at the Q point as = 9Vps _ Vpsq -(- Va) 1 Vosq +7 K[(Vesq Vz) (142 Vosa) ———_Nosott 2K| (Vesq -Vz)°(1+ ns) To = —-———__ = ____= [lpg] © Important Concept . In practice, 4 is not infinite; it has some Sinite value and it appears in the small signal equivalent circuit of MOSFET.” Q.14 The n-channel E-MOSFET has the following parameters : Vesq =3 V, Vz =1 V, K = 0.15 mA/V?, X= 0.03 V-! and Vps = 8 V. Calculate : i) Drain current ii) The output resistance. S& [SPPU : Dec.-10, Marks 7] Ans. i) Ip = K[(Vosq-Vr)*(1+4Vps)] = (015){(3-1)? (1+ 0.03 x 8)] = 0.744 mA if) Ipg = K(Vesq ~ Vr)? = (015)(3-1)? = 0.6 ma [Alp]? = [003 x 0.6 x 103] = 5.556 Ka a A Guide for Engineering StudentsElectronic Circuits 1-13 MOSFETs and its Analysis Q.45 The parameters of n-channel E-MOSFET are K=0.2 mA/V?, 2.20.01 V-', Vz =1.2 V. Calculate the output resistance for : i) Ves =2 V li) Veg =4 V. C&P [SPPU : Dec.-11, Marks 8] Ans. : i) For Vos = 2. V Tg = K (Vgsq - V3)" = (0.2) (2 - 1.2)° = 0.128 mA Ty = DeTpg] 7! = [0.01 x 0.128] -! ii) For Vgs = 4 V 781.25 kQ Ing = K (Vogq - Vx)? = (0.2) (4 - 1.2)? = 1.568 mA 1, = (Ip)! = (0.01 x 1.568] ~! = 66.77 kQ Q.16 For NMOS E mode device Vzy = 0.8 V, K, = 0.1 m4/V?. The device is biased at Vs = 2.5 V. Calculate Ip when Vps = 2 V and Vps = 10 V. for (a) d = 0, (b) 2 = 0.02 V-! Calculate r, for (a) and (b) (> [SPPU : May-17, Marks 6] Ams. ¢ Ip = K(Vgs~ Vy)? (I+ AVps) : Fork=0 Ip = K(Vgs- Vy )? = 0.1x1073(2.5-0.8)? = 0.289 mA In this case, Ip = 0.289 mA for Vps = 2 V and Vps = 10 V For A= 0.02V-!, Vps =2V Ip = K(Vos— Vy )? (1+ 2Nps)= 0.289 mA x (1 + 0.02 x 2)=0.30mA For A= 0.02V-!, Vps = 10V Ip = 0.289 mA x (1+0.02x 10) = 0.347 mA 1 vo * po For 4=0, 1 =< For 2= 0.02, 1, = ——1_= 173 0.289 mA Q.17 Explain the body effect non-ideal characteristics of EMOSFET. CS} [SPPU : May-10,13,14,15,16,18, Dec.-14,15,17,18, Marks 6] . ‘A Guide for Engineering StudentsElectronic Circuits 1-14 MOSFETs and its Anatys, Ans. :¢ In integrated circuits the substrate, or body, of all n-channg MOSFETs are usually common and are connected to the most negativ, potential in the circuit. © The Fig. Q.17.1 shows the two n-channel MOSFETs in series with , common p-substrate. Ss L SG —— —— MOSFET 1 MOSFET 2 psubstrate °Voo Fig. Q.17.1 Two n-channel MOSFETs fabricated on a common ‘substrate e The drain of MOSFET! is common to the source of MOSFET2. When the two MOSFETs are conducting, there is a nonzero drain-to-source voltage on MOSFET1, which means that the source of MOSFET2 is not at the same potential as the substrate. As a result, there exists zero or reverse bias voltage across the source substrate p-n junction of MOSFET2. The change in this reverse bias voltage changes the threshold voltage. This is known as body effect. The same effect also exists in p-channel devices. Consider the n-channel device shown in Fig. Q.17.2. To maintain a zero or reverse biased source substrate p-n junction, Vsp must be greater than or equal to zero. The threshold voltage for this condition is given by Vr =V +7 l 7 Vep ~V2411 Fig. Q.17.2 w (QUT) A Guide for Engineering StudentsElectronic Circuits 1-15 MOSFETs and its Analysis where, Vto : Threshold voltage for Vsg =0 Y : Bulk threshold or body effect parameter. It is related to device properties and is typically of the order of 0.5 V1/?_ ¢ : Semiconductor parameter, typically of the order of 0.35 V. It is a function of semiconductor doping. Q.76 Explain the subthreshold condition non-ideal characteristics of EMOSFET. 0 [SPPU : May-10,13,14,15,16,18, Dec.-10,14,15,17,19, Marks 6] Ans, : ¢ The drain current, Ip in the ideal V-I characteristic is given by 2 Ip = K (Vgs -Vr) e Taking square roots on both sides we have, vip = VK (Vos -Vr) @ The above relation is represented = __ in Fig. Q.18.1. The ideal curve 1 in the figure, says that , > isa linear function of Vg. However, in practice, when Veg is slightly less than V7, the drain current, Ip is not zero. This current is called the subthreshold current. a ~~ Practical Ves vy “« This effect may not be significant for a single device, but if hundreds or thousands of devices on an integrated circuit are biased just slightly below the threshold voltage, the power supply current will not be zero but may contribute to significant power dissipation in the integrated circuit. Q.19 Explain the breakdown effect in MOSFET. OB [SPPU : May-10,13,14,15,18, Dec.-14,15,17,18, Marks 6] There are three different breakdown effects which may occur in a MOSFET, These are = Breakdown due to avalanche multiplication. Fig. Q.18.1 Plot of Ip versus Vcs A Guide for Engineering StudentsTS Adare : Electronic Circuits 1-16 MOSFETs and its Analyy, = Breakdown due to punch-through effect. = Breakdown due to near-avalanche or snapback. = Breakdown due to static charge. 41. Breakdown due to avalanche multiplication * When applied drain voltage is too high, the drain-to-substrate Pa junction may breakdown due to avalanche multiplication. This breakdown is same as reverse biased p-n junction breakdown. Breakdown due to punch-through effect Punct-through occurs when the drain voltage is large enough for the depletion region around the drain to extend completely through the channel to the source terminal. * This effect also causes the drain current to increase rapidly with only a small increase in drain voltage. The punch through breakdown mechanism may become significant for smaller size devices. . Breakdown due to near-avalanche or snapback The near-avalanche or snapback breakdown occurs due to second-order effects within the MOSFET, such as parasitic action or excess electric field in the oxide. Breakdown due to Static Charge The input impedance of MOSFET is very high. Because of this a small amount of static charge accumulating on the gate can cause the breakdown voltage to be exceeded. * To prevent the accumulation of static charge on the gate, a gate protective device, such as a reverse-biased diode is usually included at the input of a MOSFET. 20 Explain the effects of change in temperature in EMOSFET. Ans. : ¢ Due to change in temperature, there is a change in threshold voltage, V7 and condition parameter K. © The magnitude of the threshold voltage decreases. with temperature, which means that the drain current increases with temperature at a given Vgs- y Py = A Gulde for Engineering StudentsElectronic Circuits 1-17 MOSFETs and its Analysis The condition parameter K is a direct function of the inversion carrier mobility, which decreases as the temperature increases. This causes reduction in drain current. Since the temperature dependance of mobility is larger than that of the threshold voltage, the net effect of increasing temperature is a decrease in drain current at a given Veg. This particular result provides temperature stability for MOSFETs and prevent them from thermal runaway. Q.21 Write a note on W/L ratio, Ans. : © For Veg > Vz the relationship between drain current and Vos is nonlinear and it is given as wate K( Vg - Vz )? wee (Q.21.1) The K term is a constant that is a function of the construction of the device. The value of K can be determined from equation, Ipiom (Vescon ~ Vr)? 1 = (HsCox]() e+ (Q21.2) The parameter K, is called conduction parameter for n-channel aa cam ee Ip Where Coy is the oxide capacitance per unit area, "The capacitance is given by c. = fx tox where tx is the oxide thickness and eq, is the oxide permittivity. The parameter 1, is the mobility of the electrons in the inversion layer. A Guide for Engineering StudentsElectronic Circuits 1-18 MOSFETs and tts Anaiyy, © The parameter W is the channel width and parameter L is the chang 4 length. As equation (Q.21.1) indicates, the conduction parameter is a functig, of both electrical and geometric parameters. The oxide capacitance ay carrier mobility are essentially constants for @ given fabricatio, technology. However, the geometry or width-to-length ratio W/L, is , variable in the design of MOSFETs that is used to produce specifi current-voltage characteristics in MOSFET circuits. . ‘We can rewrite the conduction parameter in the form = kn W ; fi K= = re +(Q.213) where k;, = HaCox and is called the process conduction parameter. Normally, k;, is considered to be a constant for a given” fabrication technology, so equation (Q.21.3) indicates that the width-to-length ratio WIL is the transistor design variable. Q.22 For an n-channel enhancement-mode MOSFET with the following parameters : Vzy = 0.4 V, W = 20 um, L=0.8 um, 7 Un = 650 em?/V-s, to, = 200 A° and Eg, = (3.9) (8.85x 107) F/em. Determine the current when the MOSFET is biased in the saturation region for a) vgs = 0.8 V and b) vgs = 1.6 V. Ans. : We have, = Un Cox W_ Hn €ox W Xn E 2 L 2tox Let us consider the units of this equations as follows : (cm) CIV) <\> = V=s 2g, (em) L(em) Vos The value of the conduction parameter is therefore = Hn Eon W. _ (650)(39)(885x10-" y0x10~4) 2tox L 2200x108 (a8x10- 4) 1.40 mA/V? x " A Gulde for Engiveering SudentsElectronic Circuits 1-19 MOSFETs and its Analysis We have, Ip = K(Vgg - Vy)? a) For Veg = 0.8 V, Ip = Ky(Ves - Vay )* = (1.40)(0.8- 0.4)? = 0.224 mA b) For vcs = 1.6 V, Ip = (1.40)(1.6-0.4)? = 0.02 mA Important Concept The current capability of a transistor can be increased by increasing the conduction parameter: For a given fabrication technology, Kn is adjusted by varying the transistor width W. Q.23 Calculate the drain current in an NMOS transistor with parameters : Vry = 0.4 V, ki, = 120 4/V2, W = 10 wm , L = 0.8 wm and with applied voltages of Vps = 0.1 V and i) Ves = 0, ii) Vos = 2 V, b) Repeat part a) for Vp, = 4 V. Ans. : = oF (ag)- 0.75 ma/v? a) i) Vos = 0, Ip =0 ii) Given : Vps = 0.1 V, Vp =0.4V At Vos = 2 V, Vos < Vos - Vy and we have Ip = Knl2(Vos -Vaw )Vps -V2. 1 Ip = (0.75)[2(2-0.4 )(0.1)-(0.1)?] = 0.2325 ma b)i) Vos = 0, Ip = 0 ii) Given : Vps = 4 V, Vp = 0.4 V At Veg = 2 V, Vps > Vos - Vr and we have Ip = K(Vgs -Vr)? Ip = (0.75)(2-0.4)? = 1.92 mA A Guide for Engineering StudentsElectronic Circuits 1-20 MOSFETs and its Analy) Q.24 Determine the value of the process conduction parameter 4) for an NMOS transistor with j.,, = 600 cm?/V-s and for an oxid thickness ta, of a) 500 A, b) 250 A. Ans: ky = u,C,, = Hn €ox tox -10 = (600) (3.9)(8.85 x 107) _ 2071x1077 tox tox kK. = 2071x1071 enna lO 500x 10 § a) = 41.4 pAlV? b) ki = 2071x107 _ go gualv? 250x 10- § . Q.25 An n-channel enhancement-mode MOSFET has parameters Vay = 0.4 V, W = 20 um, L = 0.8 pm, to, = 200 A and Hn = 650 cm?/V—s, a) Calculate the conduction parameter K,. b) Determine the drain current when Vos = Vps = 2 V. c) With Ves = 2 V, what value of Vp. puts the device at the edge of saturation ? Ans. : y K, = HaEox W _ (650)(3.9)(8.85x 10" 20x 1074) 2tox L 2200 10-8 (0.8 x10 ) = 1.40 ma/v? b) Given : Vpg = 2 V, Vz = 0.4V At Ves = 2 V, Vps > Vos ~Vz and we have Ip = Ky(Vos -Vrn ? = (1.40)(2-04) = 3.58 mA c) Given : Veg = 2 V Vps¢at) = Vos -Vin =2-04=16V Q.26 An n-channel enhancement-mode MOSFET has Parameters Viy = 0.8 V, L = 0.8 pm and k,, = 120 14/V?, When the transistor is biased in the saturation region with Vos = 14 y, the drain —— —— A Gulde for Engineering StudentsElectronic Circuits 1-21 MOSFETs and its Analysis current is Ip = 0.6 mA. a) What is the channel width W ? b) Determine the drain current when Vps = 0.4 V. c) What value of Vps puts the device at the edge of saturation ? ka (W Ans.ia) Ip = 2%) (os -Vw 0.12) (W ; 06 = (222) (M7) sos? 6 ()(Z) O08) 278 — cls f W = (27.8)(0.8) = 22.2 um b) Given : Vpg = 0.4 V, Vz = 0.8 V At Vos =-14 V, Vps < Vog - Vz and we have P Jeror204-a8y00)-(a4y! ] = 0.534 mA Ip ©) Vpsqat) = Vos - Van = 14-08= 0.6 V Q.27 For a p-channel enhancement-mode MOSFET, ky = 50 4/V?. The device has drain currents of Ip = 0.225 mA at Vg = Vsp = 2 V and Ip = 0.65 mA at Vsc = 3 V. Determine the WIL ratio and the value of Vzp. my Ans: Ip = F(T] +Vp? A Guide for Engineering StudentsElectronic Circuits 1-22 MOSFETs and tts Any, MOSFET DC Analysis Q.28 Explain any one biasing circuit for EMOSFET configuration. OG [SPPU : May-14, Marks 4 Ans. : © Common-source circuit is one of the basic MOSFET city configurations. The Fig. Q.281 (a) shows the n-chay enhancement-mode MOSFET circuit with the source terminal is at groy potential and is common to both the input and output sides of the circyi © It is important to note that the coupling capacitor Cc acts as an open circuit to d.c. but it allows the signal voltage to be coupled to the gate of the MOSFET. © The d.c. equivalent circuit is shown in Fig. Q.28.1 (b). © Since the gate current into the MOSFET is zero, the voltage at the gate is given by a voltage divider, which can be written as, (Q,28.1) Fig. 0.28.4 (b) dic. equivalent circultElectronic Circults 1-23 MOSFETs and its Analysis Assuming that the gate-to-source voltage given by equation (1.5.1) is greater than Vz and MOSFET is biased in the saturation region, the drain current is, t Ip = K(Vgg-V7 w=» (Q.28.2) Note that, capital notations for voltage and current indicate d.c. values. ARR Applying KVL to drain circuit we have, Yps = Vpp -IpRp ++ (Q28.3) If Vps >Vpsisat) = Vos Vy, then the MOSFET is biased in the saturation region, as we initially assumed, and our analysis is correct. If Vps Vpg( Vos (at) = Vos - Vr = 4- 1 = 3, the transistor is indeed biased in the saturation region and our analysis is valid. Q.31 For the circuit shown in Fig. Q.31.1, the MOSFET parameters are Vr = 3 V, K = 0.4 mA/V’, Determine Ves, Vps and Ip and show that MOSFET is biased in the saturation region : [SPU : Dec.-14, Marks 7] Vop = 25V Fig. Q.31.1 R lo Ans. : Vg = Vos =| ——2— | V, —— Sees (e3s) oo (arn Assuming transistor is baised in saturation, the drain current is Ip = K(Vgg- Vz? = (0.4 x 10%) (5 - 3) = 1.6 mA sass Vps = Vpp ~ IpRp = 25 - (1.6 x 10°) (4.7 x 10%) = 17.48 V Bacause Vps = 17.48 > Vps(sat) = Vos - Vr = 5 - 3 = 2, the transistor is indeed biased in saturation region and our analysis is valid. Q.32 Calculate the drain current and drain to source voltage of a common source circuit with an N-channel EMOSFET shown in Fig. Q.32.1. Find the power dissipated in the transistor. Given Vzy = 1V and K,, = 0.1 mAV?. T@ [SPU : May-15, Dec.-15, Marks 7] ——_—_—— A Guide for Engineering StudentsFETs and i Electronic Circuits 1-26 MOSFETS and ts Ang Vpp 25V Rp m1 20K Re Fig. 0.32.1 Ans.: We have, Vo = Ves Ry -(_2%_\s-2v 73Ry ¥00 (ae Assuming transistor is biased in the saturation, the drain current is Ip = K (Veg -Vz ? =(0.1x107)x (2-1? = 0.1 mA Vps = Vpp -Ip Rp =5~ (0.1x107) (20x103)= 3 V Because Vps =3 V> Vp (gay) = Vg -Vz =2-1=1V, the transistor i indeed in the saturation region and our analysis is valid. Power dissipation in transistor = Ip x Vpg = 0.1 mA x 3 V = 0.3 mW Q.33 Calculate the drain current and source to drain voltage of # common source circuit, shown in the Fig. Q.33.1. Also verify the region of operation. Device parameters Vr =~ 0.8 V and k = 0.2 mA/V*. (Refer Fig. Q.33.1 on next page) 5 [SPPU : May-05, Marks 10] ~ VppR2 _ 5x50 =25V R,+R, 50+50 Vos = 2.5-5V=-25V . we have, Ip = k(Vgg-Vr)” 4 Gulde for Engineering StudentsElectronic Circults 1-27 MOSFETs and its Analysis 50 kQ 50 kQ Fig. 0.33.1 02x10 ((-2.5V)-(-08V))? = 0.578 ma Vsp = Vpp — IpRp = 5 V - 0.578 x 107? x 7.5 x 10° = 0.665 V Since | Vcg| >| Vr | it is the nonlinear region of operation. Q.34 Draw the DC load line on the output characteristics of common-source circuit and explain various operating regions. ‘Ams.: © The load line gives a graphical picture by which we can visualize the region in which the MOSFET is biased. © Consider the common-source circuit shown in Fig. Q.34.1 (a). © Writing Kirchhoff’s voltage law around the drain-source loop results Vps = Vpp -IpRp, which is the load line equation. ¢ It shows a linear relationship between the drain current and drain-to-source voltage. —————_— ————————— ‘A Guide for Engineering StudentsElectronic Circuits 1-28 MOSFETs and ts Any ¢ Fig. Q.34.1 (b) shows the Vpsisat) characteristic for the MOSFET, won I R, tof ER AP Igx0 + ve w= Vos Re (2) Common source circuit (b) Transictor charactatistics, Voguby curve, loadtine and point for the nMOS. ‘common-source elrult shown In Fig. 0.34.1 (a) Fig. Q.34.1 © The load line is given by Yps = Vpp ~IpRp =10-1p (40) ° = (Q34.1 10_V; or Ib = ae ma) w=» (Q.34.1 0b) and is also plotted in the figure. The two end points of the load line ar determine in the usual manner. If the drain curent = 0, then Vpg= 10 V; if Vps = 0, then drain current = 10/40 = 0.25 mA. * The Q-point of the MOSFET is given by the dc. drain curent (Iz) and drain-to-source voltage (Vpg) and it is always on the load line, # shown in Fig. Q.34.1 (b). : If the gate-to-source voltage is less than V7, and the MOSFET is in cut-off. the drain current is zero © As the gate-to-source voltage becomes just greater than Pte A the id voltage, the MOSFET tums ON and is biased in the stuntion meee © As Vgg increases, the Q-point moves upon the load line, ¢ The transition point is the boundary between the satura i i ti non-saturation regions. It is the point where, ion and Ele Ve op! a. sul Re orMole) Wal) = OF Upp. NS a Electronic Circuits 1-29 Moar Pa its Analysis Vos = Vpsiai)=Vcs-Vr. As Veg increases further, the MOSFET operates in nonsaturation region. Q.35 Consider the circuit shown in Fig. Q.34.1 (a). Assume Vz =1 V and K = 0.1 mA/V?, Determine the transition parameters for the given circuit. Ans. : At the transition point, Vos = Vpsat) = Ves -Vt =Vpp -IpRp -(Q35.1) The drain current is still Ip = K(Vos-Vr ? = (Q35.2) Substituting expression of Ip in equation (Q.35.1) we get, Ves = Vr =Vpp -KRp(Vgs -Vz ? Rearranging this equation gives KRp (Ves -Vr? (Ves -Vr)-Vpp = or (0.1) (40) (Veg -Vz ? +(Veg -Vz )-10 4(Vgs -Vz +(Vgs -Vz )-10 Vec-Vn = “be vee rbt Vb? -4ac irc 10) GsTYT = = 7112.68857 8 “ou co = 1.461 V or 1.711 V Taking the smaller value we have, Vos-Vr = 1461 V = Vos Therefore Vos = 2.461 V and Ip (0.1)x10%(2.461-1)? = 0.2134 mA For Vog <2.461 V the MOSFET is biased in the saturation region and for Vos >2.461V, the MOSFET is biased in the nonsaturation region. Q.36 Give the step in the D.C. analysis of MOSFET Circuits. ‘A Guide for Engineering StudentsTs and Electronic Circuits 1-30 MOSFETS and Its Any Ams. : » To analyze the d.c, response of a MOSFET circuit we’ requin know the bias condition (saturation or non-saturation) of the MOSFET, some cases, the bias condition is not given, which means that we hae assume any one bias condition, then analyze the circuit to determine if, solution consistent with our initial assumption. To do this, we hav, : perform following steps. 1. Assume that, the MOSFET is biased in the saturation region, in wi case Ves > Vr, Ip >0 and Vg 2 Vp gat 2. Analyze the circuit using the saturation curent-voltage relations. 3. Evaluate the resulting bias condition of the MOSFET. If the assun parameter values in step-1 are valid, then the initial assumption correct. If Vqs Vpgia = Vog-Vz =10-5=5 V, the transistor is indeed biased in the saturation region and our calculations are valid with, 0 Vps = 1431 V and hence valid Ip = 6.725 mA Ves = Vo -Ip Rg = 18-6.725x 10-3 (820)= 12.4855 V Q.39 Determine Ip9, Vesg, Vp and Vs for the MOSFET circuit shown in Fig. Q.39.1. Given for MOSFET, Vs (..4) = 3 V, Tpcony = 5 MA, Ves (ony = 6 V. 0a [SPPU : Dec.-05, 10, May-14, Marks 8] 9 + Vo =24V Ry Fig. 0.39.1 A Guide for Engineering StudentsElectronic Circuits 1-34 MOSFETs and tt Ang is Ipom 5x10 Ans. : K = —_““"__= Saas Weson)-Vr > (6-3) 5.55x107 4 a/v? Vg = WpoRe _ 24x68 _ongy CUR +R, 10+ Vo-Ves-Vs = 0 Ves = Vg-IpRs =9.714-IpRs We have, Ip = K(Vgg-Vr Substituting value of Veg we get, Ip = K[(Q9.714-IpRg)-V7}? 5.55x10~ [9.714-750Ip -3]? D = 5.55x10- [6.714-750 Ip}? " 5.55x10~ [45-1071 Ip +56250012,] Ip = 0.024975 — 5.5894 Ip+ 312.1875 12, 312.1875 12, — 6.5894 Ip + 0.024975 =0 ! Ip = 6:5894+ V12.2326 2x 312.1875 Ip = 4.95 mA or 16.15 mA Let us take Ip = 16.15 mA Yps = Vpp ~Ip(Rp +Rg)= 24-16.15x103(2.2x103 +750) = -23.64.V ‘ Practically Vpg should be positive. Hence Ip = 4.95 mA Vps = 24-4.95x1073(2.2x103 +750)Electronic Circuits 1-35 MOSFETs and its Analysis = 9.3975 V Vs = IpRg = 4.95x10-3 x750 = 3.7125 V Vp = Vst+Vps = IpRs+Vps_ = 4.95x10-°.x750 +9.3975 = 13.11V Q.40 Determine the d.c. bias point for the EMOSFET circuit in Fig. Q.40.1. Assume k= 0.4 mA/V?, V7 =3 V. Oa [SPPU : Dec.-11, Marks 10] 30V 10K 2MQ Fig. 0.40.4 Solution : The Fig. Q.40.1 (a) shows the equivalent circuit 2 Vo = Vos = 3735 Vos = 0-5 Vos Vos = Vpp- Ip Rp = 30-101, oma 2” Vos = 0.5 Vpg = 15-5 Ip We know, I, = K (Vg, - V,)* -750) a Ve V, Substituting the value of Vg. , K and V; we have Ds I, = 04'(5 -51,-3) gi | = 04 (12-5 1 2 > 0.4 [144 - 120 I, + 25 Ip] Fig. 0.40.1 (a) See c= ome A Guide for Engineering StudentsElectronic Cireuits 1-36 MOSFETs and its Ang = $7.6 481, +101 1012, - 49 1, -57.6 = 0 = 49¢y (-49)? -(4x 10% 57.6) 2x10 1.96 mA or 2.942 mA Ip = 1.96 mA gives more appropriate Vps value, Vos = Vpp — Ip Rp = 30 - (1.96 X10) = 10.4 V Q.41 For the E-MOSFET circuit shown in Fig, Q.41.1, Vps = 2 Vpp and Ip =Ipioy): Determine Vppy Rp and Ves. Fy MOSFET, VGs(ony = 6 Vs Ipcon) =4 mA and Ves(+8 =3 ¥- a [SPPU : May-O5, Marks 6) +Vpp Rp . D 10M 6 S Fig. Q:41.1 Ans.: Ip = Ipon= 4mA We have, Vpp -IpRp -Vps = ° “.Vpp -IpRp -0.5Vpp = 9 . IpRp = 05Vpp Ves = Vpp -IpRp Let us calculate Vos aElectronic Circults 1-37 MOSFETs and its Analysis I We have, K = ——DON) __ 4mA _ 4g yy io-4 (Vosion-Vr (6-3 We have, Ip = K(Vgs-Vr 2 “4x10 = 444x107 4(Vigg - 3) Vos = 6V 6 = Vpp -IpRp = Vpp -0.5 Vpp 6 = 05Vpp Ree. Vpp = 12V 0.5x12 a Rp = ——F=15kQ sq 4x10 Q.42 Draw and explain the constant current source biasing circuit for EMOSFET. UG [SPU : Dec.-13,15, Marks 6] Ans, ; ¢ Another way of biasing MOSFET to. stabilize the Q-point is to ‘use constant current source instead of source resistance, as shown in the Fig: Q.42.1 (a). The ‘constant current source is independent of the MOSFET parameters, thereby stabilizing the Q-point. @ Fig. Q.42.1 (a) nMOS common-source circult blased with a Constant-current source and (b) Equivalent d.c. circult tudens -SODE A Guide for Engineering SudentsElectronic Circuits 1-38 MOSFETs and its Analyxy, © The Fig. Q.42.1 (b) shows the dc. equivalent circuit for common source circuit biased with a constant current source. (Refer Fig. Q.42.1 on previous page) ; Q.43 The parameters of the MOSFET in the circuit shown in Fig. Q.42.1 (a) are Vp = 0.8 V, k’ = 80 4/V? and W/L = 3. Design the circuit such that the quiescent values are Ip = 500 HA and Vp = 5 V. Assume Vpp = + 10 V and Vsg = - 10 V. Ans.: The d.c. equivalent circuit is shown in Fig. Q.42.1 (b). Since | vj; =0, the gate is at ground potential and there is no gate current through | Ro. Assuming the MOSFET is biased in the saturation region, we have KW IDs Wes -Vr P or 500 " (F): © Wes-087 * Vos = 2.84. The voltage at the source terminal is Vs = -Vgg = -2.84 V. The drain current can also be written as, = Yo-Yo _ 10-Vp es Rp Rp For Vp = 5 V, we have, 10-5 Role - D = “pg = 10ke ; The drain-to-source voltage is Vps = Vp -Vs =5-(-2.84) = 7.84V Validity of assumption : Since Vps_= 784 V>Vpsat) = Vos ~Vr =2.84-0.8=2.04V the MOSFET, is biased in the saturation region, as initially assumed, Q.44 Draw and explain the constant current source biasing circuit using mirror. A Guide for E: =Electronte Circuits 1-39 MOSFETs and its Analysis Ans. : Fig. Q.44.1 shows the biasing of MOSFET using a constant current source using a current mirror. Here, MOSFET Qu, whose drain is Shorted to its gate and thus is operating in the saturation region. Therefore, we have Ww Ip. = 4Ky (L).%s -v,P ve (Q44.1) For circuit we have Vpp + Vsg - Vi Ipi = Iper = PP “S5- "cs = fy | +. (Q.49.2) avs) | vgs = Vosq = const DK (Vesq Vr PI"! = BIg] ++ (Q.49.3) Q.50 Draw the small signal equivalent circuit for CS circuit. Ans. : ¢ Fig, Q.50.1 shows. the small signal equivalent circuit of common-source circuit shown in Fig. Q41.1 (a). -1 " oe T> Fig. Q.50.1 Small signal equivalent circuit of common-source circuit with NMOS transistor model Q.51 For the. circuit shown in Yoo = 5 Fig.’ Q51.1. MOSFET parameters are : Vry = 1 V, K = 0.80 mA/V? and 2 = 0.02 V~1, Determine the small signal voltage gain of a MOSFET circuit. Assume the transistor is biased in the saturation region. BSP [SPPU : Dec.-15, Marks 7) Fig. Q.51.1 Common source circult ———— A Guide for Engineering StudentsElectronic Circuits 1-44 MOSFETs and 45 Analyy Ans. : Step 1 : Calculate Ing, gm and T, The quiescent values are, Ipg = KVgsq- Vr = (0.8) (2.12 - 12 =1mA Bm = 2K(Vgsq - Vr) = 2(0.8) (2.12 - 1) = 1.792 mA/V Ty = [lpg]? = [(0.02) (0.8)]" 1 = 62.5 kQ Step 2 : Draw the small signal ac equivalent circuit. : i G D f \ Fig. Q.51.2 Small signal equivalent circuit of common-source circuit with NMOS transistor model Step 3 : Calculate voltage gain Look at Fig. Q.51.2, we have _ Vo = ~&mVgs(tol[Rb) Since Ves = Vj, the small signal voltage gain is, Ay = 9 =~8mltollRp)=~ (1.792) (62.5 ||2.5) =- 43 7 4 Q52 For the circuit shown in Yoo Fig, Q521, if Vy = 1V, K, = 08mA/V;, A = 001 v", determine small signal voltage gain. Assume that EMOSFET is biased in saturation and Vgsq =3 V. S@ [SPPU : Dec.-12, Marks 8 ] Ans. : Step 1: Calculate Ing , gm and ro Ing = K (Vosq ~ Vr)" = (0.8) 3 = 17 Fig. 0.82.1 = 3.2 mA Gucope) A Gulde for Engineering SudentsElectronic Circuits LAs MOSFETs and its Analysis Bm = 2K (Vosq - Vz) = (0.8) (3 - 1) = 3.2 mA/V 1. = Apa)! [(0.01) (3.2)]-! = 31.25 2 Step 2 : Calculate Ay Vo = — Sm Ves (Fo Il Rp) ve wAy = Ven Be (r, I Rp) = ~ 3.2) (31.25 || 4.7) =- 13 -: V, =e Q.53 Determine the small signal Vpp = 10 voltage gain for a CS amplifier Ro shown in Fig. Q.53.1. Transistor 10K parameters are Vy = 2 V, . K, = 05 mA/V? and 2 = 0, Vos Assume the transistor is biased Vi such that Ip = 0.4 mA, | 1 [SPPU : May-15, Marks 7] = Ans. : Vesa Step 1: Calculate Vesq, gm and 1) I Ipg = K (Vgsq -Vr ? ~ Fig. 0.53.1 ff Vosq = err = [po+2= 2004 v Bm = 2K (Vesq -Vz )=2 (0.5) (2894-2) = 0,894 mA/V To = [AIpQ]? =[0xIpg]t = Step 2 : Voltage gain Av = —8m (fo Il Rp)=-8m Rp Vv oIyse — 0.894 x 10 =- 8.94 Q.54 State the Steps in the A.C. Analysis of MOSFET Amplifier. Ans.: The steps to be performed in the analysis of the MOSFET amplifier are as follows : 1, Perform the dic. analysis of the circuit and check whether the MOSFET is biased in the saturation region in order to Produce a linear amplifier, A Guide for Engineering StudentsElectronic Circuits 1-46 MOSFETs and its Anay, SVC7_f TT thy 2. Replace the MOSFET by its small signal equivalent circuit. 3. Analyze the small signal equivalent circuit, making the d.c. sour, components equal to zero. 1,10 : Modeling the Body Effect Q.5 Draw and explain the small signal equivalent circuit for NMOs considering body effect. Ans. : ¢ We know that, the body effect occurs in a MOSFET. In which the substrate, or body, is not connected to the source. © For an NMOS device, the body is connected to the most negative terminal in the circuit i.e. to the signal ground. For NMOS, ip = Ky os-Vin? we (Q.55.1) | and Vin = Vino +y[y20¢+¥e3 -V20F] s+ (Q.55.2) If an ac component exists in the source-to-body voltage, vsp, the ac component will be induced in the threshold voltage. This results an ac component in the drain current. Thus, a back-gate transconductance can dip —s be defined as = - ip \(2Vm~ | OVES IQ-pt OveR opt OVI.) | OVsB lo-pt Substituting value of ip from equation (1) we have Smb = ai . : Vm = -2K,y (vos-Vn)=-8m o» (Q55.3) and substituting value of Vz; from equation (Q.55.2) we have @Vm . __¥__ oy (Q.55.4) Ovs— 220; +¥ 55 — aw &mb = ~(-8m)'M)=8mN Fig. Q.55.1 shows, the small signal equivalent circuit of the MOSFET considering the body effect. A Gulde for Engineering StudentsElectronic Circuits MOSFETs and its Analysis Fig. Q.55.1 Small signal equivalent circuit of NMOS device considering body effect 1.11 : Analysis of CS Amplifier Q.56 For the circuit shown in Fig. Q.56.1, the MOSFET parameters are: Vp = 15 V, Ky = 0.8 mA/V? and d= 0.01V~!, determine the small signal voltage gain, R; and R,. =10V Fig. 0.56.1 S&H [SPU : Dec.-09, 17 May-16, Marks 10] Ans.: : Step 1: D.C. analysis : The d.c. or quiescent gate-to-source voltage is, Ro \wyy -(_30 = Vesa (wnta) oo) -(aea)o = 2.678 V Ipg = K(Vgsq - Vr = (0.8) (2678-152 = 111mA Vpse = Vpp —IpgRp = 10 - (1.116) = 445 V ——————————————— A Guide for Engineering StudentsElectronic Circults 1-48 MOSFETs and its Ang, —. Since Vpsq > Vosq Vr, the MOSFET is biased in the saturation region. Step 2 : Calculate Ay , Rj and Ry &m = 2K (Vosq-Vr) 2 (0.8)(2.678 - 1.5) = 1.8848 mA/V to = lpg] = [(0.01)(1.11)]" 1 = 90kQ BP = Ryl[Rz = 82 ||30 = 21.96 k R Ay = -8m(tollRp)| <—! v = ~8m(oll of es) 21.96 = = (1.8848)(90 || 9 steer Ro = Rpll to = 5 || 90 = 4.737 k2 @.57 For the circuit diagram - 7.55 =12V shown in Fig. Q57d, Vp = 12 calculate Ay, Rj, Ry. The MOSFET parameters are on Vy =15V,K, = 0.8 mA/V2, ~_ A=001 V7. t- S&P [SPPU : Dec.-18, Marks 6] Ans. : Step 1: DC Analysis vec, -( 2 y 30 ka: 'GSQ R,+Rz ‘DD 30 “p30? 7 Fig. Q.87, =3214V im OETA Ipg = K(Nosq- Vy )?= 0.8(3.214-1.5)? = 2.35 ma oso = Yop ~IpgRp = 12 - (2.35 * 4,7) = 0,985 v Since Vpsq [SPPU : Dec.-13, Marks 6) Ams: Ipg = Kn(Vegq -Vrn)? = 0801073 (212-1)? Ipg = 1mA 8m 2Ky (Vgsq -Van) = 2x 080x107 (212-1) Sm = 1.792 mav T) = > =——__= 50 kQ. ° Ape ao2xix103 Ay = ~8m(tolIRp)= -1792x10-5(50K || 2.5K) = — 4.266 Q.59 Describe the small-signal voltage gain, input and output resistance of a common source amplifier. For the circuit shown below in Fig. Q.59.1 the parameters are Vpp =10 V, Ry = 70.9 k2, Rz = 29.1 kQ and Rp = 5 kQ. The transistor Parameters are Vz = 15 V, K, = 0.5 m4/V? and 4= 0.01 V-1, assume Ry = 4 kQ. SO [SPPU : May-10, Marks 8] © #Vop Fig. Q.59.4 A Gulde for Engineering SindentsElectronic Circuits 1-51 MOSFETs and its Analysis Ans. : Step 1: DC analysis R 29.1 Vesa = | x—2— |(Vpp) =( 224 _ \a10) = 2.91 Vv a [soo D0) =| FB wa J d Ipg = K(Vesq - Vr)? = (0.5) (2.91- 1.5)? = 0.994 mA Vpsq = Vpn -IpgRp = 10 - (0.994)(5) = 5.03 V Since Vpsq > Vcsq - Vr, the MOSFET is biased in the saturation region. Step 2 : AC analysis Bm = 2K (Vesq - Vr) = 2 (0.5)(2.91 - 1.5) = 1.41 ma/V [lpg] = [(0.01)(0.994)|- ! = 100.6 ka To Ri RyI[Rz = 70.9 || 29.1 = 20,63 k2 > f we -smtlRD =(1.41)(1006 | af ws Z| Ay = - 5.625 Ry = Rpl| m = 5] 100.6 = 4.763 ka. .60 For the circuit diagram shown in the Fig. Q.60.1 calculate 4,, = and R,. Assume : K,, = 0.4 mA/V?, Vr =3 V, Vos= 4.66 V, = 40 kQ. (Refer Fig. Q.60.1 on next page) UG [SPPU : Dec.-10, May-19, Marks 6] Ams.: gm = 2K(Vosq- Vp) = 2«0.4x 107 (4.66- 3) = 1.328x1073 Ay = -8m (ta lIRp) = =1,328( 40 |/4.7) = - 5.585 Rj = Ry || Ry = 40 || 10=8 MQ i A Gulde for Engineering StudentsElectronic Circuits 1-52 MOSFETs and its Anaiy, Fig. Q.60.1 Ro = Rp lity = 4.7 |] 40= 4.2 kQ Q.61 For the circuit diagram shown in Fig. Q.61.1. Calculate A,,R; and R,. Assume, Ky, =15 mAWV?, Vy =15 V, 2=0) OS [SPPU : Dec.-19, Marks 6] Solution : Step 1 : DC analysis =(_®2 Vosg = (whey) ">> _ (51 12+5. 10 = 2.98V Step 2 : AC analysis Fig. Q.61.1 &m = 2K(Vesq -Vr) = 2x (1.5) (2.98-1.5) = 4.44 mA/V A Gulde for Engineering Sudent,Electronic Circuits 1-53 MOSFETs and its Analysis To Ri A= 0 Ri |Rz =12Mo | 51 Mo = 3.58 M2 Ay = ~ 8m(to |p) =" gm Rp‘ fy = = -(444%1) = = 4.44 Q.62 A common source amplifier using EMOSFET is shown in Fig. Q.62.1. Assume for this device Tpon) =200mA at Vescon) =4V. Vr =2V and gy, =23 mS, Vj, =25 mV. Find : 1) Vcs__ ii) Ip il) Vps iv) a.c. output voltage. O} [SPPU : Dec.-11, Marks 14) 15V Fig. .62.1 Ans. : Step 1 : Calculate Vos, Inq Vos 82 82 = Veg = OA y= 82 ag Vo = Vos = ay ay Yoo” gay gy * 15 = 2228 V Ke Ip(ON) _ 200«10 [Vcs(ON)-Ves(TH) 4-2 Ing = K (Vgsq - Vz) = 0.1 (2.228 - 2)? = 5,198 mA Vps = Vpp ~ Ip Rp = 15 - 5.198 x 10°? x 3.3 x 10? — 2.1534 V ‘A Guide for Engineering StudentsElectronic Circuits 1-54 MOSFETs and its Analy, Step 2 : Calculate a.c. output voltage Ay = yee G33 KK) = ~23x 1073 3.3 K || 33 K) = 6. Vi= fo = Vix Ay =25x 1073 x 69 = 1.725 V | Q.63 Consider the circuit in Fig. Q.63.1. The MOSFET parameters are Vr = 0.8 V. K= 1 mA/V?, and A = 0..Calculate the voltage gain of the amplifier. Fig. Q.63.1 Ans. : Step 1: DC analysis =(—®2 -(_ 30 e Vo (x) Ypp = (worm) 10 = 1.667 V Vso = Vo-IpRs = 1.667-IpRs A Guide for Engineering §Electronic Circuits 1-55 MOSFETs and its Analysis Ip = K(Vesg-Vz = (1) (1.667 - Ip(0.5)- 0.8) = 0.752 ~ 0.867 Ip +025 iB 0.25 I?, - 1.867 Ip + 0.752 = 0 bib? = Solving quadratic equation using formula abi ate we get, a 1.867 4(- 1.867) — 4x 0.25% 0752 2x 0.25 1.867 + 1.6534 0.5 Ip = 7mA or 0.4272 mA For I, = 7 mA, Yps = Vpp ~Ip(Rp + Rs)= 10-7 (6.8 +05) =—41.1V * Since Vps should be greater than Vpsicas) = Vgg—Vz the value of Vps with Ip = 7 mA is not valid. “Ipg = 0.4272 mA Ypse = Vpp -IpgRp ~IpgRs 10 — (0.4272) (6.8) ~(0.4272)(0.5) = 6.88.V Since Vpsq > Vcsq-Vr, MOSFET is biased in the saturation Tegion Vesq = 1.667 - (0.4272) (0.5) = 1.4534 V 8m = 2K (Vesq - Vr )= 2(1) (1.4534 - 0.8) = 1.3 mA/V to = Alp)! = Step 2 : Draw the small signal equivalent circuit Fig. Q.63.2 shows the small signal equivalent circuit, for the common Source amplifier circuit with source resistor. A Guide for Engineering StudentsElectronic Circuits ‘ Fig. Q.63.2 Small signal equivalent circuit NAOS common-source amplifier with Rg t Step 3: Calculate A, Vo = -8mVgsRp © Writing a KVL equation from the input around the gate-source Joop, we have Vi = Vgs + GmVgs)Rg = Ves(1+ 8m) y, ene & 1+ gms © The small signal voltage gain is ay = Yo. J8m¥eR> _ -saRp i Vgsl+8mRs) 1+ gmRg ~ (1.3) 6.8) Ay = —£3)68) v= Ty 305) ~ 536 Q.64 For the circuit shown in Fig. Q.64.1, the MOSFET parameters are : Vr = 0.8 V, K = 1mA/V? and i = 0. Calculate the voltage gain. (Refer Fig. Q.64.1 on next page) Ans. : Step 1 : DC analysis Since the d.c. gate current is zero, the d.c. voltage at the source terminal is Vs =-Vosq, and the gate-to-source voltage is determined from Q = K(Vesq - Vr? Ipg = A Gulde for Engineering Studet,Electronic Circuits 1-57 MOSFETs and its Analysis Fig. Q.64.1 NMOS common-source circuit with source bypass capacitor 0.5 = (1) (Vesq - 0.8% which gives, Vosq = -Vs =151V The quiescent drain-to-source voltage is Vpse = Vpp ~IpgRp - Vs = 5- (0.5)(68)-(-151) = 311 V Since Vps > Vas — Vr = 1.51 — 0.8 = 0.71 V, transistor is biased in the saturation region. Step 2 : Draw the small signal equivalent circuit. Fig. Q.64.2 Small signal equivalent circult, for bypass source resistor 7 ‘A Guide for Engineering StudentsElectronic Circuits 1-58 MOSFETs and its An, OO“ Bm = 2K(Vgs-Vyz)= 2(1) (1.51 - 0.8) = 1.42 mA/V Vo = -8mVgsRp Since Ves = Vj, the small-signal voltage gain is Ay = Yo 2-gaRp =~ (1.42\(6.8) = - 9.656 i 1.12 : Analysis of CD (Source Follower) Amplifier Q.65 Explain analysis of source follower EMOSFET amplifier. Ans. : © Fig. Q.65.1 shows NMOS source follower cea amplifier. Here, the output is taken from the source with resp‘ ground and drain is connected directly to Vpn. $Yo0 Fig. 2.65.1 Common drain (source-follower) amplifier © Fig. Q.65.1 (a) shows the small-signal equivalent circuit. The circuit is drawn assuming the coupling capacitor acts as a. short circuit. Fig. Q.65.1 (b) shows the same equivalent circuit, with all signal grounds at a common point. Input resistance (Rj) R= RR, A Guilde for Engineering SyElectronic Cireults 1-59 MOSFETs and its Analysis Vo Vin 9m Vest (b) Equivalent circuit with all signal grounds at a common point Fig, 0.65.2 Voltage gain (A,) Vo = &mV¢s (oll Rs) +(Q.65.1) Applying KVL to the outer loop, we have Vin = Vest Vo =A Q65.2) Substituting the value of V, from equation (Q.65.1) in equation (Q.65.2) we have , Vin = Vos + Bm Vgs (ty ll Ry) «-(Q.65.3) V;, “ V,. = ——*_ --(Q.65.4) & 1+8m(tollRs) Using voltage divider rule we have, Vi Ri V, ++(Q.65.5) = i mR +RG A Guide for Engineering StudentsElectronic Circuits 1-60 MOSFETs and its Ang, Substituting value of Via from equation (Q.65.5) in equation (Q.65.4) 1 R =——_ V, ++ (Q65¢ Webwe Ne ~ Temes) Ri+Ra ©! Substituting the value of V,; from equation (Q.65.6) in equation (Q.65)) we have, y. = BmltollRs) Ri Vv »-(Q.653) © 1+gmltlIRs) Ri +Rg : a Vo A= Vv, SmltollRs) “Ry --(Q.65.8 | © T+gm(olls) Ri +Rg Output resistance (R,) output resistance R,. To calculate the output resistance, we set all independent small signal sources equal to zero by shorting them, apply the test voltage to the output terminals and measure the test current. © Fig. Q.65.3 shows the small-signal equivalent circuit to esa al ! Source shorted Fig. Q.65.3 Equivalent circuit to determine Re Applying KCL to the output node we have +-(Q.65.9) Since input current is zero, we have Venn = Vs +-(Q.65.10) A Guide for Engineering StudsElectronic Circuits 1-61 MOSFETs and its Analysis Substituting value of V,, from equation (Q.65.10) in equation (Q.65.9), we have, Ty Be Va = RE Q.66 For the circuit shown in Fig. Q.66.1, calculate the R, Ay and R,. The MOSFET parameters are : Vin = 1.5 V, K, = 8 mA/V? and = 0.01 V-!, Assume Ipg = 8 mA and Vosq = 2.5 V. vi Fig. 0.66.1 Ans. :, Rj = R; |] Ro = 180 |] 470 = 130.15 kQ Bm = 2K, (Vosq - Vay) = 2(8) (2.5 - 1.5) = 16 mA/V =} . 1. v~ TIpq Ooixe ~ 25H A, = Sa Rsllt) Ri 1+8m(Rellto) Ri +Rsi — A Guide for Engineering StudentsElectronic Circuits 1-62 MOSFETs and its Any, _ _16(0|f125) 130.15 1416 (1]] 125) (130.15+ 2) R, geltals = - ” || 12500 || 1000 = 58.55 Q = 0.9226 Comparison between Common Source and Source Follower Amplifiers Q.67 Give comparison between CS and CD amplifiers. Ans. + Parameter ‘Common source . amplifier Tnput and output “Input is applied to gate terminals and output is sensed at rain Ay= Voltage gain “Ba (Golo) Ry a Moderately high value Zin = Ri |Ro High value Ourput impedance 244 = Rp|r, Moderate value : Application Can be used “as das a yoltag 4 Can s ed a3 a voltage buffer inverting amplifier and can be used to drive a low impedance load ‘like speaker renee A Guide for Engineering Stutle.Electronic Circuits 1-63 MOSFETs and its Analysis 1.14 : Frequency Response for Amplifier Q.68 Draw the frequency response and indicate cut-off frequencies and bandwidth. OR What do you mean by mid frequency range related to an amplifier. Ans. : Fig. Q.68.1 shows the frequency response of the RC coupled amplifier. Voltage gan Amid) | 0.707 Ayia). PIM frequency region + Bandwicth —oi Frequency ot tb Fig. Q.68.1 Frequency response, half power frequencies and bandwidth of an RC coupled amplifier Two frequencies are indicated by f, and f; are called the lower cut-off and upper cut-off frequencies, respectively, Bandwidth of the amplifier is defined as the difference between f and fy; ie. Bandwidth of the amplifier = f; - f. These two frequencies are also referred to as half-power frequencies since gain or output voltage drops to 70.7 % of maximum value and this Tepresents a power level of one-half the power at the reference frequency in mid-frequency region. Q.69 Write a note on low frequency response of CS amplifier. Ans. : Low frequency, response is affected by coupling and. bypass capacitors and high frequency response is affected by intemal capacitances, parasitics and load capacitances for CS amplifier circuit shown in Fig. Q.69.1 we have 1 f,, = ——_______ 2m(Rg +R |R2)Co 1 2n(Rp +R, Coz —S——— A Guide for Engineering Students fl. =Electronic Circuits 1-64 MOSFETs and its Anup, Rx Fig. 0.69.1 CS amplifier 1 fis = “7. 1). {Ral +h loo &m .70 Describe the internal capacitances and high frequency model of MOSFET. 6 SPPU : May-10, 14, Marks 8 ] ‘Ams.*: » Fig. Q.70.1 shows an n-channel MOSFET structure with inherent _ Tesistances and capacitances. Cg, and Cog: These two capacitances connected to the gate are inherent in the transistor. Cp, and C,q. represent the interaction between the gate and the channel inversion charge near the source and drain terminals, respectively. © If the device is biased in the nonsaturation region and Vpgs is small, the channel inversion charge is approximately uniform, It means that, 1 Cys = Cea = (5]WLCo where Cox (F/cm?) = € gx /tox © The parameter €,, is the oxide permittivity, ——— ~ A Guide for Engineering StudentsElectronic Circuits 1-65 MOSFETs and its Analysis P substract Fig. Q.70.1 Inherent resistance and capacitances in the n-channel MOSFET structure For silicon MOSFET, €,, = 3.9 €,, where €, = 8,85x 107 + F/em . is the permittivity of free space. The parameter to, is the oxide thickness in cm. When the transistor is biased in the saturation region, the channel is pinched-off at the drain and the inversion charge is no longer uniform. In this case, the value of Cy essentially goes to zero and C approximately equals (2/3) WLC... The value of C,, depends on the size of the device. Typically, it is in the range of picofarad. .Cgsp and Cog, : © These two gate capacitances are called Parasitic or overlap capacitances because in actual devices, the gate oxide overlaps the source and drain contacts, because of tolerances or other fabrication factors. , © The drain overlap capacitance Coap lowers the bandwidth of the FET. Cys : It is the drain-to-substrate pn junction capacitance. © Fig. Q.70.2 shows the small signal high frequency equivalent circuit for the n-channel common-source MOSFET. © The voltages, capacitances and resistances in the circuit are stated below. ” Vgs ‘It is the internal gate-to-source voltage that controls the channel current. —— A Guide for Engineering StudentsElectronic Circuits 1-66 MOSFETs and tts Ang, Fig. Q.70.2 Equivalent circuit of the n-channel common-source MOSFE Cog and Cgg: * The gate to source and gate to drain capacitances are the parasitic overlap capacitances, To : This resistance is associated with the slope of Ip versus Vps- © In the ideal MOSFET biased in the saturation region, Ip is | independent of Vpc. That is, r, is finite. In short channel length devices, tp is finite because of channel-length modulation. Tg :It is the source resistance. It can have a significant effect on the transistor characteristics. Fig. Q.70.3 shows a simplified low frequency equivalent circuit including 1, but not r.. Fig. Q.70.3 Simplified low-frequency equivalent circult of the n-channel common-source MOSFET Including source resistance 1, but not resistance 1, END... A Guide for Engineering Students |(Unie I) MOSFET Circuits MOSFET as Swite! iode/Active Resistor Q.1 Explain the working of MOSFET as a switch. Ans. : ¢ For E-MOSFET no channel exists while gate is at the same potential as the source. Therefore, MOSFETs require no external bias voltage to switch them off; ie. they can be operated from a single polarity supply. For the n-channel MOSFET, a positive input pulse is necessary for switch-ON. When the input signal becomes positive, Ip flows, and the output voltage drops from Vpp to IpRp (oy). The Fig. Q.1.1 shows the n-channel enhancement MOSFET switch. +Vo0 R V, + A V9 0 Output { aie uy [ “3 Fig. Q.1.1 n-channel enhancement MOSFET switch Q.2 Explain the working of a MOSFET as a diode. Ans. When the MOSFET has the gate connected to the drain, it acts like a diode or active resistance with characteristics similar to a pn-junction diode, @-)Electronic Circuits 2-2 MOSFET Co, Note that when the gate is connected to the drain of an enhancem, MOSFET, the MOSFET is always in the saturation region. Fig. Q.2.1 MOSFET as diode / active resistor vps 2Ves-Vr = Vo -Vs2VG-Vs—VT S vp- v¢2-Vr = Vp¢2-Vr © Since Vz is always greater than zero for an enhancement device, Vpc = 0 satisfies the conditions for saturation. In saturation, Ip = ‘ Wwes-Vr = K@weg-Vr 2 =(Q2) | © Connecting the gate to the drain means that the vpg controls ip and therefore the channel transconductance becomes a channel conductance. The small signal conductance can be found by differentiating equation 1 with respect to vcs, giving. _ dip _K'W Bm = BVG5 Sree) 2. CMOS Inverter Q.3 Draw the structure of CMOS inverter gate, Explain its working. Ans, : Fig. Q.3.1 shows the basic CMOS inverter circuit, It consists of two MOSFETs in series in such a way that the P-channel device has its source connected to + Vpp (a positive voltage) and the N-channel device has its source connected to ground. The gates of the two devices are A Gulde for Engineering StudeElectronic Circuits 2-3 MOSFET Circuits +Vpp = + 5V p-channel (Q,) Input o——4, n-channel (Qo) Fig. Q.3.1 The CMOS inverter connected together as the common input and the drains are connected together as the common output. 1, When input is HIGH, the gate of Q, (P-channel) is at 0 V relative to the source of Q, ie. Vg, =OV. Thus, Q; is OFF. On the other hand, the gate of Q> (N-channel) isat + Vpp relative to its source ie. Vgsy = + Vpp- Thus, Qo is ON. This will produce Voy =0 V. 2. When input is LOW, the gate of Q; (P-channel) is at a negative potential relative to its source while Q) has Vgs = 0 V. Thus, Q) is ON and Q) is OFF. This produces output voltage approximately +Vpp. 2.3 : MOSFET Current Sink and Source Q4 What are current sink and current source ? Ans, : ¢ A current sink and current source are two terminal components whose current at any instant of time is independent of the voltage across their terminals. © The current of a current sink or source flows from the positive node, through the sink or source to the negative node. © A current sink typically has the negative node at Vss and the current source has the positive node at Vpp. —_————————— A Guide for Engineering Studentsnic Circuits 2-4 ‘MOSFET cy, Electrot a Q.5 Draw and explain the current sink circuit using MOSFET ? ‘Ans. : ¢ Fig. Q.5.1 (a) shows an implementation of a current sink Chren using MOSFET. . Vinin flour tour’ ‘ 1 + Vas = Yes Vout ol Veo - Vto Vout {a) Current sink (b) Current-voltage characteristics of (a) | Fig. 0.5.1 The gate is taken to whatever voltage necessary to create the desired value of current. The circuit shown in Fig. Q.2.1 can be used to provide this bias voltage. In the non-saturation region, the MOSFET is not a good current source. In fact the voltage across the current sink must be larger than Vsw (Vos - Vz) in order to operate MOSFET in saturation and for the current sink to perform properly. . The circuit shown in Fig. Q.5.1 (a), if the gate-source voltage is held constant, then the large-signal characteristics of the MOSFET are given by the output characteristics of Fig. Q.5.1 (b). If the source and bulk are both-connected to Vss, then the small-signal output resistance is given by — 1+AVps 1 Ty, = pip ws (Q.5.1) If the source and bulk are not connected to the same potential, the characteristics will not change as long as Vps is a constant, Q.6 Draw and explain the current source circuit using MOSFET. Ans. : © Fig. Q.6.1 (a) shows an implementation of a current source circuit using a p-channel MOSFET. A Gulde for Engineering StudentsElectronic Circuits 2-5 MOSFET Circuits Yoo Ves Hour + Vout L Ves*IVrol Vop Your {a) Current source (b) Current-voltage characteristics of (a) Fig. 0.6.4 ¢ Here, the gate is taken to a constant potential as is the source. With the definition of Vout and iour of the source as shown in Fig. Q.6.1 (a), the large-signal V-I characteristic is shown in Fig. Q6.1 (b). The small-signal output resistance of the current source is given by _ 1+AVps _ 1 ap s+ (Q6.1) The source-drain voltage must be larger than Vygy for this current source to work properly. This current source only works for values of Vour given by Vout. £ Vac +|Vr0| +-(Q6.2) ¢ We have seen the basic circuits of the current sink and source of Fig. Q.5.1 (a) and Fig. Q.6.1 (a). The advantage of these circuits is their simplicity. The improvement in the performance of these circuits is needed for certain applications. We can improve their performance by two ways : © One improvement is to increase the small-signal output resistance-resulting in a more constant current over the range of Voyr values. = The second is to reduce the value of Yém» thus allowing a larger range of Voyy over which the current sink/source works Properly. . — A Guide for Engineering StudentsElectronic Circuits 2-6 MOSFET Cy, MOSFET Current Mirror Q.7 Draw and explain the basic constant current source circuit Wig MOSFET. ‘Ans. : © Fig. Q7.1 shows the circuit of a MOSFET constant-current source. It uses two MOSFETs T, and T;. Since the drain and gate of MOSFET 1, is shorted, it is operated in saturation region. Neglecting channel _—_ength modulation (2 = 0), the drain current of T; is given by Fig. Q.7.4 Constant current source using MOSFET 1, (W. Ter = Ipy = 5K'a] — (Vos -Vri* (QT) 21, = Ku Ves - Vn I Ves = V; see cs i +Y Ka -(Q.7.2) Looking at circuit in Fig. Q.7.1 we can also write =e Sop Nos Tp) = Ther z -(Q.7.3) where Iger is a reference current of the current source. The MOSFET T; has the same Ves as Ty; thus, operating in saturation we have, ~ alee [We oa Kil 72 }Wos Va? +(Q.7.4) = Kya (Ves - Vr if we assume that it is A Guide for EnyElectronic Circuits 2-7 MOSFET Circuits Since Vas: = Vas2 and substituting value of Vos from equation (Q.7.2) we have, = 2 I,=Ky [vs + l Yn al Here also we have neglected the effect of channel length modulation (= 0). Taking ratio of equations (Q.7.1) and (Q7.4) we have I _ pe _ (W2/L2) TreF Ipi (Wy; /L)) --(Q.7.5) For identical MOSFETs, (W2 /L2)=(W, /Ly) and hence I, = Ipeg. In such situation, the circuit simply replicates or mirrors the reference current in the. output terminal. For this reason, when two MOSFETs are identical, the circuit shown in Fig. Q.7.1 is known as MOSFET current mirror circuit. Q.8 Define override voltage. Ans. : ¢ To ensure that, T, of constant current source circuit is operated in saturation, Vo = Vos —-Vr (QB) or Vv, 2 V, +-(Q.8.2) ° ov where Voy is the override voltage. Q.9 Design the MOSFET current source circuit for following specifications : Vpp = 4 V, Irer = 120 pA, L; = L; = 1 pm, W, = W2 = 10 pm, Vr = 0.7 V and K’,=200 A/V, Find the value of R, calculate the lowest possible value of V., and calculate ra: if early voltage Vay = 20 V/nm. Also, find the change in the output current if change in V, is + 2 V. Ans. : Since L; = L; and W, = W2 MOSFETs are identical and I, = Iper = 120 pA A Guide for Engineering StudentsElectronic Circuits 2-8 MOSFET Chey, Ly. (W : Toi= her = 5 «(T3| (Vos - V2) 120 = 5 x 200% 10 (Vos ~ Vi" (Vos - Va? = V2, = 0.12 < " ov = 0.3464 -V Vos = Vy + Vay = 0.7 + 0.3464 = 1.0464 V 24.61 kQ TRF 120 x10-® Vemin = Voy = 0.3464 V Vig = Vag XL, = 20x 1=20V eo ee 20eee ta 7 7" Dipga 7 16667 10 AY, 2v al, = “to-_2V_ ° te 166.67kQ ane Q.10 Design 2 MOSFET current source amplifier for following specifications : Vpp = +5 V, K/, = 40 pA/V+, Vz'=1V, A= 0, Taer = 0.2 mA, I, = 0.1 mA and Vos gay = 0.8 V Ans. : Given : Vpsqja1) = Voy = 0.8 V Vosr = Voy + Vz = 08+ 1.0=18V We have, lL, (W. be 3% TE} verso? _ 0.1x10-3 | 1 on ok 3Kn(Wose-VrP 5x40x10-6(1.8-1)? 1( W. “i Ther = ot) (Vos: ~ Vr)? A Guide for EngineeringElectronic Circuits 2-9 MOSFET Circuits Wi = Ree Li i 3Kn(Vosi -Vr Since Vgg, = Vasz we have, Wi _ 02x10 i = 15.62 ee 5% 40%10-%(1.8-17 R = Ypoo-Ves TREF Q.11 Draw and explain the constant current source circuit with resistor R replaced by another MOSFET. Ans.:¢ Fig. QL1 shows the +Vp MOSFET constant current source circuit with R replaced by another MOSFET. Here, MOSFET ‘is configured like a resistor. 1 ' 3 © Since T, and T; are connected in series Ip; =Ip3. Neglecting channel length modulation (A= 0) we can write, Kut Vest — Va)? = Ky (Voss = Vis)? 1, + (QU11) From the circuit we have Vosi + Voss “= Vop ve Q112) Load current 1, with 4= 0 can be given Fi@: @-11-1 MOSFET constant by Q.12 Draw and explain the cascode current mirror circuit using MOSFETs. Ans. Fig. Q.12.1 shows the modified MOSFET current source circuit. Here MOSFETs T; and Ty, are included to provide higher output resistance, This circuit is known as cascode current mirror circuit. A Guide for Engineering StudentsElectronic Circuits 2-10 MOSFET Cirey, +Vpp Fig. Q.12.2 (a) shows the equivalent circuit of the Tree MOSFET cascode current {ho mirror to obtain the output resistance. Since gate voltages for T, and T; and hence for T; and T, are constant, they are shown grounded for ac. circuits. e Fig. Q12.2 (b) shows the small-signal equivalent circuit 1, Tz to obtain R,. Here T, is replaced by —_ equivalent Tesistance, T,2. Applying KCL to output node we have Fig, Q.12.1 MOSFET cascode current mirror circuit Vu (Veet) Tos Looking at the Fig. Q.12.2 (b) we can write, es ee «(Q.12.2) Substituting value of V,, from equation (Q.12.2) in equation (Q.12.1), we have ly = gy Veat .(Q.12.1) To = - 8 Ix tot Sota) --(Q.12.3) R= Fe = toe Ba Fa tae tg x = Tog + (1 + Bey Tos) Too +-(Q.12.4) © Since 2m for >> 1, the output resistance of the cascode current mirror is much greater than basic two MOSFET current source, SNe ee A Guide for Engineering S.Electronic Circuits 20 MOSFET Circuits (a) Equivalent circuit (b) Smail-signal equivalent circuit Fig. Q.12.2 Q.13 In the MOSFET cascode current source, all transistors are identical and, transistor and circuit parameters are as follows : Vr = 1V, Ky = 40 pA/V?, A = 0.02 V~4, Inep = 10 wA and Vpp = + 10 V. Find : a) Ves of each MOSFET b) The lowest possible voltage value Vs ¢) The output resistance R,. Ans. : Trex = Ky (Vos - Vz) Since 1, = Iger and transistors are identical Ves2 = Vosi = Voss = Voss = 15 V Vos = Vosi + Voss = 3 V Vosmin = Vor - Voss + Vasu where, Vog, = Vegy - Vp = 15-1 = 05 V = 3-15+05=2V _ 2! 1 Vpaeniny r= ° ATREF — 0,02x10x10~ For cascode circuit we have, = typ = tog = 5 MQ —— ‘A Guide for Engineering StudentsElectronic Circuits 2-122 MOSFET Clreu, Ba = 2(Kalp = 240x108 x10x10-® = 0.04 may R " Tou * (1+ By toa) Top 5x 10° + (1 +0.04x 107? x 5x 105) x 5 x 10° 1010 MQ Q.14 Draw and explain the Wilson current mirror circuit. Ans. : ¢ Fig. Q.14.1 shows MOSFET Wilson current source and modified MOSFET Wilson current source circuits. In MOSFET Wilson current source, the Vps values of T, and T; are not equal. Since A is not zero, the ratio Iy/Iper is slightly different from the aspect ratio, The modified MOSFET Wilson current circuit solves this problem by including Ty. The advantages of these circuits is the increase in output resistance and hence to increase the stability of output current. (2) MOSFET Wilson current source _(b) Modified MOSFET Wilson current soufce Fig. Q.14.1 Q.15 Draw and explain the MOSFET current steering circuit, ‘Ans. : Fig. Q.15.1 shows simple current steering circuit, Here, 7, together with R determines the reference current Iper and transistors T,, T, and T; form a two-output current mirror. es A Guide for EElectronic Circults 2-13 MOSFET Circuits Fig. Q.15.1 Current steering circuit b= (W/L) IF We 7Ls) -(Q15.1) W3/L = hee TS --(Q15.2) For T, and T; to operate in saturation Yp2 » Vs 2 - Vss + Vosi - Vr --(Q153) -(Q.15.4) Look at Fig. Q.14.1 we see that current I is fed to the input side of a current mirror formed by PMOS transistors T, and Ts. For this mirror (Ws /L5) “(Wy /L4) or Vp2» Vos. 2 — Vss + Vou I, = where I, = Jj and to keep Ts in saturation, Vos $ Von ~ [Veusl where Voys is the override voltage at which Ts is operating. In the above current Steering circuit T, pulls the current I; from the load and hence acts as a current sink, On the other hand, Ts pushes the current Is into a load and hence acts as a current source. END... A Guide for Engineering Students\Unie I Feedback Amplifiers 3.1 Intreduction Q.1 Define negative and positive feedback. Ans. : When input signal and part of output signal are in phase, the feedback is called positive feedback: On the other hand, when they are in out of phase, the feedback is called negative feedback. Q.2 Give comparison between positive feedback and negative feedback. Ans. : Parameter Positive Feedback Negative Feedback No. 1. Phase shift between O-or 362" feedback signal and input signal 180° 2 Feedback signal and Are in pase Are out of phase input signals ; : 3. Input voltage We | Rtreases | Output voltage ae Decreases Stability Application Used oscillators and Used in amplifiers Seni ie G-DElectronic Circuits 3-2 Feedback Amplifiers 2 Four Types of Amplifiers Q.3 Draw and explain the equivalent circuit of voltage amplifier. Ans, : ¢ Fig. Q.3.1 shows a Thevenin’s equivalent circuit of an amplifier. RpR, Ri>>Ry Fig. Q.3.1 Thevenin’s equivalent circuits of a voltage amplifier If the amplifier.input resistance R, is large compared with the source resistance R, then we% If the external load resistance Ry is large compared with the output resistance R, of the amplifier, then VYo=Ay Yeo= Ay Ve (where Ay = Voltage gain). Such amplifier circuit provides a voltage output proportional to the voltage input, and the proportionality factor does not depend on the magnitudes of the source and load resistances. Hence, this amplifier is called voltage amplifier, An ideal voltage amplifier must have infinite input resistance R, and Zero output resistance Ry. For practical voltage amplifier we must have - Rj >> Ry and Rp >>R,. Q.4 Draw and explain the equivalent circuit of current amplifier. Ans. : ¢ Fig. Q4.1 shows Norton’s equivalent circuit of a current amplifier, * If amplifier input resistance R; — 0, then I; 7 © If amplifier output Tesistance. Ry — o, then I; =Ajl, (where Ai = Current gain). A Guide for Engineering StudentsElectronic Cireults 3-3 Feedback Ampil, R00rR<> Ri. Q5 Draw ‘and explain the equivalent cireuit of transconductance amplifier. Ans. : « Fig. Q.5.1 shows a transconductance amplifier with a Thevenin’s equivalent in its — circuit and Norton’s equivalent in its output circuit. font RL G Mi RP>R, RR, a Fig. Q.6.1 Transconductance amplifier ¢ In this amplifier, an output current is proportional to the input signal voltage and the proportionality factor is independent of the magnitudes of the source and load resistances. © Ideally, this amplifier must have an infinite input resistance Rj and infinite output resistance Ro. A Guide for Engineering Stu