AONS32314

30V N-Channel MOSFET

General Description Product Summary

• Latest advanced trench technology VDS 30V

• Low RDS(ON) ID (at VGS=10V) 32A
• High Current capability RDS(ON) (at VGS=10V) < 8.7mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=4.5V) < 12.3mΩ

Applications 100% UIS Tested

100% Rg Tested
• Notebook AC-in load switch
• Battery protection charge/discharge

DFN5X6 D
Top View Bottom View Top View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D G
PIN1
PIN1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AONS32314 DFN 5x6 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 32
ID
Current G TC=100°C 26 A
C
Pulsed Drain Current IDM 90
Continuous Drain TA=25°C 18.5
IDSM A
Current TA=70°C 15
C
Avalanche Current IAS 33 A
C
Avalanche energy L=0.05mH EAS 27 mJ
TC=25°C 25
PD W
Power Dissipation B TC=100°C 10
TA=25°C 5.0
A
PDSM W
Power Dissipation TA=70°C 3.2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RqJC 4.0 5.0 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current μA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.25 1.75 2.25 V
VGS=10V, ID=20A 7.2 8.7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.2 13.5
VGS=4.5V, ID=20A 9.8 12.3 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 53 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1420 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 150 pF
Crss Reverse Transfer Capacitance 95 pF
Rg Gate resistance f=1MHz 1 2 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 22 32 nC
Qg(4.5V) Total Gate Charge 10 15 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 4.7 nC
Qgd Gate Drain Charge 4 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 2.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 22.5 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 7.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 9.0 nC

A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
10V 4.5V 4V VDS=5V

60 60
3.5V
ID (A)

ID (A)
40 40
125°C
3V

20 20
25°C
VGS=2.5V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.8

Normalized On-Resistance
1.6
15
VGS=10V
RDS(ON) (mW)

ID=20A
VGS=4.5V 1.4
10
1.2
VGS=4.5V
5 VGS=10V ID=20A
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+02
ID=20A
1.0E+01
20

1.0E+00 125°C
RDS(ON) (mW)

15 125°C
IS (A)

1.0E-01
10
1.0E-02 25°C

5
25°C 1.0E-03

0 1.0E-04
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
VDS=15V
ID=20A
8 Ciss
1500

Capacitance (pF)
VGS (Volts)

6
1000
4

500
2
Coss

Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
TC=25°C
100.0 10ms
150
RDS(ON)
limited
Power (W)

10ms
ID (Amps)

10.0
100ms 100
DC
1ms
1.0 10ms
TJ(Max)=150°C 50
0.1 TC=25°C

0
0.0 0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZqJC Normalized Transient

TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=5°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 40

25
30
Power Dissipation (W)

20

Current rating ID (A)

15 20

10
10
5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZqJA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RqJA=55°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B: ResistiveSwitching
Resistive Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: Unclamped
Unclamped InductiveSwitching
Inductive Switching (UIS)
(UIS) Test
Test Circuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD:Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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