TK40X10J1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)

TK40X10J1
Switching Regulator, DC-DC Converter Applications
Unit: mm
Motor Drive Applications

• Small gate charge : Qg = 59 nC (typ.)

• Low drain-source ON-resistance: RDS (ON) = 15 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 100 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V
Gate-source voltage VGSS ±20 V

DC (Note 1) ID 40
Drain current A
Pulse (Note 1) IDP 160 JEDEC ⎯
Drain power dissipation (Tc = 25°C) PD 125 W
JEITA SC-97
Single pulse avalanche energy
EAS 99 mJ TOSHIBA 2-9F1B
(Note 2)
Avalanche current IAR 40 A Weight: 0.74 g (typ.)
Repetitive avalanche energy (Note 3) EAR 12.5 mJ
Channel temperature (Note 4) Tch 175 °C
Storage temperature range (Note 4) Tstg −55 to 175 °C

Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 1.2 °C/W

Note 1: Ensure that the channel temperature does not exceed 175°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 μH, IAR = 40 A, RG = 1 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on
AEC-Q101.

This transistor is an electrostatic-sensitive device. Handle with care.

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 TK40X10J1
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −20 V 55 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 4.0 V
Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 20 A ⎯ 15 20 mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 20 A 30 60 ⎯ S
Input capacitance Ciss ⎯ 3300 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 180 ⎯ pF

Output capacitance Coss ⎯ 580 ⎯

Rise time tr 10 V ID = 20 A ⎯ 7 ⎯
VGS
0V VOUT

RL = 2.5 Ω
Turn-on time ton ⎯ 25 ⎯

4.7 Ω
Switching time ns
Fall time tf ⎯ 11 ⎯
VDD ≈ 50 V

Turn-off time toff ⎯ 66 ⎯

Duty ≤ 1%, tw = 10 μs
Total gate charge
Qg ⎯ 59 ⎯
(gate-source plus gate-drain)
Gate-source charge Qgs1 VDD ≈ 80 V, VGS = 10 V, ⎯ 16 ⎯ nC
ID = 40 A
Gate-switch charge Qgw ⎯ 25 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 19 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 40 A

Pulse drain reverse current (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 160 A
Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A
Pulse drain reverse current (Note 1, Note 5) IDRP2 ⎯ ⎯ ⎯ 4 A
Forward voltage (diode) VDS2F IDR1 = 40 A, VGS = 0 V ⎯ ⎯ −1.2 V
Reverse recovery time trr IDR = 40 A, VGS = 0 V, ⎯ 77 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 110 ⎯ nC

Note 5: IDR1, IDRP1: Current flowing between the drain and S2 pins. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and S1 pins. Ensure that the S2 pin is left open.

The S1 and S2 pins should be grounded together, unless otherwise noted.

Marking
Note 6: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code) Please contact your TOSHIBA sales representative for details as to
K40X10J
environmental matters such as the RoHS compatibility of Product.
1 The RoHS is Directive 2002/95/EC of the European Parliament and
Lot No.
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Note 6
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 TK40X10J1

ID – VDS ID – VDS
40 80
Common 10 6 Common 10 6.5 6
source 6.5 source 7
Tc = 25℃ 7 5.5 Tc = 25℃
Pulse test 8 Pulse test 8
(A)

(A)
30 60
ID

ID
Drain Current
Drain Current

20 40 5.5

VGS = 5 V
10 20
VGS = 5 V

0 0
0 0.4 0.8 1.2 1.6 0 0.5 1 1.5 2 2.5 3

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

200 2.0
Common source
Common source
Tc = 25℃
VDS = 10 V
(V)

Pulse test
Pulse test
160 1.6
(A)

VDS
ID

120 1.2
Drain-source voltage
Drain Current

80 0.8
ID = 40 A
100

40 0.4
25 Tc = −55°C 20

10
0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

1000 100
Common source
⎪Yfs⎪ (S)

Common source
VDS = 10 V Tc = 25℃
Pulse test Pulse test
Drain-source ON-resistance
Forward transfer admittance

100
RDS (ON) (mΩ)

Tc = −55°C
100
VGS = 10 V
10
25

10

1 1
1 10 100 1 10 100 1000

Drain current ID (A) Drain current ID (A)

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 TK40X10J1

RDS (ON) – Tc IDR – VDS

40 1000
Common source Common source
Tc = 25°C Tc = 25℃
35

(A)
Pulse test Pulse test
Drain−source ON-resistance

30

IDR
40
RDS (ON) (mΩ)

100
25

Drain reverse current

ID = 10,20 A
20 10

5
15 VGS = 10 V
10
3
10

1 VGS = 0, −1 V
5

0 1
−80 −40 0 40 80 120 160 200 0 −0.4 −0.8 −1.2 −1.6 −2

Case temperature Tc (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Tc

10000 5
Common source
VDS = 10 V
Vth (V)

ID = 1 mA
Ciss 4
Pulse test
(pF)

1000
Gate threshold voltage

3
C
Capacitance

Coss 2
100

Crss
Common source 1
VGS = 0 V
f = 1 MHz
Tc = 25°C
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160 200

Drain-source voltage VDS (V) Case temperature TC (°C)

PD − Tc Dynamic input/output characteristics

140 100 20
PD (W)

(V)

(V)

120
VDS 16
80
VDS

VGS

100 20
40
Drain power dissipation

60 12
Drain-source voltage

Gate-source voltage

80 VDD = 80 V

VGS
60 Common source
40 8
ID = 40 A
Tc = 25℃
40
Pulse test
20 4
20

0 0 0
0 50 100 150 200 0 20 40 60 80 100 120

Case temperature Tc (°C)

Total gate charge Qg (nC)

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 TK40X10J1

rth − tw
10

Normalized transient thermal impedance

3

1
rth (t)/Rth (ch-c)

Duty = 0.5

0.3 0.2

0.1 PDM
Single Pulse
0.1 0.05 t

T
0.03 0.02
0.01 Duty = t/T
Rth (ch-c) = 1.2°C/W
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse width tw (S)

Safe operating area EAS – Tch

1000 120
EAS (mJ)

100
ID max (pulsed) *

100 1 00 μs *
80
ID max (continuous)
ID (A)

Avalanche energy

60
1 ms *
10
DC operation
Drain current

Tc = 25°C 40

20
1

0
25 50 75 100 125 150 175 200

0.1 *: Single nonrepetitive pulse Channel temperature (initial) Tch (°C)

Tc = 25°C

Curves must be derated

linearly with increase in
temperature.
VDSS max
0.01
0.1 1 10 100 1000 BVDSS
15 V
Drain-source voltage VDS (V)
0V IAR

VDD VDS

Test circuit Wave form

RG = 1 Ω 1 ⎛ B VDSS ⎞
Ε AS =
E ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 25 V, L = 100 μH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

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 TK40X10J1

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• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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