Analog Circuit Design Lab
(20IC207P)
ICT 4th Semester
Experiment No. 4
To study the response of a FET amplifier and calculate
gain and band width.
Laboratory Sessions would be based on following topics:
BJT, FET, MOSFET:
• Device characterization
• BJT amplifier design.
MULTISTAGE AMPLIFIER DESIGN:
• Study of different coupling mechanism
• Frequency response of multistage amplifier
• Effect of feedback
OPAMP CIRCUITS AND APPLICATIONS
• Clipping and clamping circuits
• Schmitt trigger, monostable and astable multivibrators, triangular wave
generator,
• Precision rectifiers, log and antilog amplifiers, sample and hold circuit, peak
detector,
• Active filters (1st 2nd order butterworth)
• Timer IC based circuits
ANALOG TO DIGITAL AND DIGITAL TO ANALOG CONVERTERS
• R-2R ladder type DAC, Weighted resistor type DAC,
• Counter type A/D Converter, Flash type A/D converter, Dual slope A/D
converter, Successive approximation ADC,
• Use of Sample and Hold circuit in ADC.
What we're going to learn today:
1. Implement a FET amplifier in MicroCAP circuit
simulator
2. To plot its frequency response and obtain its
bandwidth
BJT vs FET Amplifier
Field-effect transistor amplifiers provide an excellent voltage gain with the
added feature of a high input impedance.
They are also low-power-consumption configurations with good frequency
range and minimal size and weight. JFETs, depletion MOSFETs, and
MESFETs can be used to design amplifiers having similar voltage gains. The
depletion MOSFET (MESFET) circuit, however, has a much higher input
impedance than a similar JFET configuration.
A BJT device controls a large output (collector) current by means of a
relatively small input (base) current, the FET device controls an output (drain)
current by means of a small input (gate-voltage) voltage. In general, therefore,
the BJT is a current-controlled device and the FET is a voltage-controlled
device. In both cases, however, note that the output current is the controlled
variable. Because of the high input characteristic of FETs, the ac equivalent
model is somewhat simpler than that employed for BJTs. Whereas the BJT
has an amplification factor, b (beta), the FET has a trans conductance factor,
gm.
Although the common-source configuration is the most popular
one, providing an inverted, amplified signal, one also finds
common-drain (source-follower) circuits providing unity gain with
no inversion and common-gate circuits providing gain with no
inversion.
The voltage gain of an FET amplifier is generally less than that
obtained using a BJT amplifier, the FET amplifier provides a
much higher input impedance than that of a BJT configuration.
Output impedance values are comparable for both BJT and FET
circuits.
Self Bias Configuration
FET Amplifier
Observation Table:
S.No Frequency(Hz) Output Input Voltage Gain in
. Voltage Voltage Gain Av= (dB)=
Vo Vin Vo/Vin 20log(Vo/
Vin)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
CALCULATIONS:
1. Determine lower cut-off frequency and upper cut-off
frequency from the graph.
2. Calculate Band width.
Lab Report Format (submit in pdf format)
• Title: EXPERIMENT No. 2: To …………………..
• Apparatus/Tool required: Multisim Live
• Theory of experiment: Brief theory of experiment
• Procedure:
• Observation Table:
• Calculation:
• Result:
(a) Activity 1 (b) Activity 2 (c) Activity 3 (if any)
• Discussions
