[go: up one dir, main page]
Scribd
Upload
68 views3 pages

D1417 Schematic

This document provides the product specification for the SavantIC Semiconductor 2SD1417 silicon NPN power transistor. It includes maximum ratings, characteristics, and package outline. The 2SD1417 has a TO-220Fa package, high current gain, and low saturation voltage, making it suitable for power amplifier and switching applications including hammer drives and pulse motor drives. Key parameters include a collector current rating of 7A, collector-emitter breakdown voltage of 60V, saturation voltages below 2V, and current gains from 1000 to 15000.

Uploaded by

NghiaNguyentrung
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
68 views3 pages

D1417 Schematic

This document provides the product specification for the SavantIC Semiconductor 2SD1417 silicon NPN power transistor. It includes maximum ratings, characteristics, and package outline. The 2SD1417 has a TO-220Fa package, high current gain, and low saturation voltage, making it suitable for power amplifier and switching applications including hammer drives and pulse motor drives. Key parameters include a collector current rating of 7A, collector-emitter breakdown voltage of 60V, saturation voltages below 2V, and current gains from 1000 to 15000.

Uploaded by

NghiaNguyentrung
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1417

DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1022
·DARLINGTON

APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 60 V

VCEO Collector -emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 7 A

IB Base current 0.2 A

TC=25 30
PC Collector power dissipation W
Ta=25 2.0

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1417

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 60 V

VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA 0.9 1.5 V

VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=14mA 1.2 2.0 V

VBEsat Base-emitter saturation voltage IC=3A ;IB=6mA 1.5 2.5 V

ICBO Collector cut-off current VCB=60V; IE=0 100 µA

IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA

hFE-1 DC current gain IC=3A ; VCE=3V 2000 15000

hFE-2 DC current gain IC=7A ; VCE=3V 1000

Switching times

ton Turn-on time 0.8 µs

IB1=-IB2=6mA
tstg Storage time 3.0 µs
VCCA45V ,RL=15B

tf Fall time 2.5 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1417

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)

You might also like