Guerilla LNA GRF2070DS

Data Sheet
RELEASE 0/ DATA SHEET

GRF2070
Ultra-Low Noise Amplifier
0.1 to 1.5 GHz
FEATURES DESCRIPTION
Excellent NF Performance
The GRF2070 is a broadband, linear, ultra-low noise
High Gain amplifier designed for small cell, wireless infrastructure,
Outstanding Linearity and other high performance RF applications requiring
Flexible Bias Voltage and Current ultra-low NF, high gain, and linearity.
Compact 2.0 x 2.0 mm DFN-8 Package This device is a member of a family of pin-compatible,
Process: GaAs pHEMT ultra-low noise devices which cover a wide range of
Reference: 5 V / 0.9 GHz / 70 mA frequency bands with industry leading NF and gain:
Gain: 21 dB GRF2070: 0.1 to 1.5 GHz GRF2071: 0.7 to 2.7 GHz
OIP3: 39 dBm GRF2072: 1.5 to 3.8 GHz GRF2073: 2.0 to 6.0 GHz
OP1dB: 20 dBm
GRF2074: 1.0 to 6.0 GHz (Next-gen Process)
Evaluation Board Noise Figure: 0.4 dB
Please consult with the GRF applications engineering
APPLICATIONS team for application notes and custom tuning/evaluation
Cellular Infrastructure board data. De-embedded S-parameters with noise
Small Cells and Cellular Repeaters parameters are available on the website.
Distributed Antenna Systems
BLOCK DIAGRAM
Guerrilla RF Proprietary Information. • ©2021 Guerrilla RF, Inc. • All rights reserved. • September 8, 2021
www.guerrilla-rf.com • (336) 510-7840 • sales@guerrilla-rf.com • 1196 Pleasant Ridge Road, Suite 5, Greensboro, NC 27409 1
Data Sheet
RELEASE 0/ DATA SHEET
2.0 x 2.0 mm DFN-8 Pin Out (Top View)
GRF2070 Ultra-Low Noise Amplifier 0.1 to 1.5 GHz RELEASE 0/ DATA SHEET
Pin Assignments
Pin Name Description Note
1 VENABLE Enable Voltage Input VENABLE and series resistor set IDDQ. VENABLE ≤ 0.2 volts disables device.
2 RF_IN RF Input External match must provide DC block.
3, 4, 5, 6, 8 GND/NC No Connect or Ground No internal connection to die.
7 RF_Out/VDD RF Output Provide device VDD via external bias inductor.
Provides DC and RF ground for LNA, as well as thermal heat sink. Recommend
PKG BASE GND Ground multiple 8 mil vias beneath the package for optimal RF and thermal
performance. Refer to evaluation board top layer graphic on schematic page.
Absolute Ratings
Parameter Symbol Min. Max. Unit
Power Supply Voltage VDD 0 6 V
RF Input Power (Load VSWR < 2:1, VDD = 5 V) PIN MAX 23 dBm
Operating Temperature (Package Heat Sink) TPKG HEAT SINK -40 105 °C
Maximum Channel Temperature (MTTF >106 Hours) TMAX 170 °C
Maximum Dissapated Power PDISS MAX 500 mW
Electrostatic Discharge
Charged Device Model CDM 1500 V
Human Body Model HBM 500 V
Storage
Storage Temperature TSTG -65 150 °C
Moisture Sensitivity Level MSL 1 −
Caution! ESD Sensitive Device.

Exceeding Absolute Maximum Rating conditions may cause permanent damage.
Note: For additional information, please refer to Package Manufacturing Information | Guerrilla RF (guerrilla-rf.com)
All Guerrilla RF products are provided in RoHS compliant lead (Pb)-free packaging. For additional information, please refer
to the ROHS Compliance | Guerrilla RF (guerrilla-rf.com)
4 www.guerrilla-rf.com • (336) 510-7840 • sales@guerrilla-rf.com • 1196 Pleasant Ridge Road, Suite 5, Greensboro, NC 27409
Recommended Operating Conditions

Specification
Parameter Symbol Min. Typ. Max. Unit Condition
Power Supply Voltage VDD 0 5 6 V
Operating Temperature
TPKG HEAT SINK -40 105 °C
(Package Heat Sink)
Typical Application Schematic with

RF Frequency Range FRF 0.1 0.9 1.5 GHz external matching components
(Notes 1, 2).
Note 1: Operation outside this range is possible, but with degraded performance of some parameters.
Note 2: Contact the Guerrilla RF Applications team for guidance on optimizing the tuning of the device for alternative bands.
Nominal Operating Parameters – General

The following conditions apply unless noted otherwise: Typical Application Schematic using the 0.1 to 1.5 GHz tuning set, M3 = 900 Ω, VDD = 5 V, VENABLE
= 5 V, IDD = 70 mA, FTEST = 0.9 GHz, TPKG HEAT SINK = 25 °C. Evaluation board losses are included within the specifications.
Specification
Power Supply Current IDD 70 mA Adjustable for optimal IP3.
Enable Current IENABLE 3.5 mA
Switching Rise Time TRISE 1800 ns
Switching Fall Time TFALL 900 ns
Thermal Data
On standard evaluation board
Thermal Resistance: (Infrared Scan) jc 60 °C/W
(Note 3).
Note 3: MTTF >10^6 hours for TCHANNEL ≤170 °C.
Nominal Operating Parameters – RF

= 5 V, IDD = 70 mA, FTEST = 0.9 GHz, TPKG HEAT SINK = 25 °C. Evaluation board losses are included within the specifications.
Specification
Gain S21 20 21 dB
Reverse Isolation S12 -26 dB FRF: 0.7 to 0.96 GHz
Evaluation Board Noise Figure NF 0.4 0.6 dB Evaluation Board SMA to SMA
+4 dBm POUT per tone at 2 MHz

Output 3rd Order Intercept OIP3 39 dBm
Spacing (899 and 901 MHz)
Output 1 dB Compression Power OP1dB 18.6 20 dBm
Typical Operating Curve Conditions

= 5 V, IDD = 70 mA, FTEST = 0.9 GHz, TPKG HEAT SINK = 25 °C. Evaluation board losses are included within the plots.
GRF2070 Typical Operating Curves
GRF2070 Typical Operating Curves
GRF2070 Typical Operating Curves: S-Parameters: 0.7 to 0.96 GHz Tune
Note: Mu Factor ≥ 1.0 implies unconditional stability.
GRF2070 Standard Test Schematic
GRF2070 Evaluation Board Assembly Diagram

GRF2070 Evaluation Board Assembly Diagram Reference: 0.7 to 0.96 GHz Tune
Component Type Manufacturer Family Value Package Size Substitution
M1 Resistor (Jumper) Various - 0 Ohm 0402 ok
M3 Resistor Various 5% Sets IDDQ 0402 ok
M4 Capacitor Murata GJM 47 pF 0402 ok
M8 Inductor Murata LQW 22 nH 0402 ok
M10 Capacitor Murata GRM 0.1 μF 0402 ok
M11 Capacitor Murata GRM 4.7 pF 0402 ok
Evaluation Board DFN8_2x2_RevA
GRF2070 Bias Resistor Selection Curves:
2.0 x 2.0 mm DFN-8 Suggested PCB Footprint (Top View)
2.0 x 2.0 mm DFN-8 Package Dimensions
Package Marking Diagram
• Line 1: “Y” = YEAR (single digit). “WW” = WORK WEEK the Device was assembled.
• Line 2: “XXXX” = Device PART NUMBER.
Tape and Reel Information

Guerrilla RF’s tape and reel specification complies with Electronics Industries Association (EIA) standards for “Embossed
Carrier Tape of Surface Mount Components for Automatic Handling” (reference EIA-481). See the following page for the
Tape and Reel Specification and Device Package Information table, which includes units per reel.
Devices are loaded with pins down into the carrier pocket with protective cover tape and reeled onto a plastic reel. Each
reel is packaged in a cardboard box. There are product labels on the reel, the protective ESD bag and the outside surface
of the box.
For the Tape and Reel Reference Table, please refer to: Package Manufacturing Information | Guerrilla RF (guerrilla-rf.com)
Cover Tape
Label Carrier Tape
Tape and Reel Packaging with Reel Diameter Noted (D)
Pin 1 Quadrant
W Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q1 Q2
Feed Direction
P
Carrier Tape Width (W), Pitch (P), Feed Direction and Pin 1 Quadrant Information
Revision History
Revision Date Description of Change
September 8, 2021 Converted format to new template.
Data Sheet Classifications

Data Sheet Status Notes
Advance S-parameter and NF data based on EM simulations for the fully packaged device using foundry-supplied transistor
S-parameters. Linearity estimates based on device size, bias condition and experience with related devices.
Preliminary All data based on evaluation board measurements taken within the Guerrilla RF Applications Lab. Any MIN/MAX limits
represented within the data sheet are based solely on estimated part-to-part variations and process spreads. All parametric
values are subject to change pending the collection of additional data.
Release 0/ All data based on measurements taken with production-released material. TYP values are based on a combination of ATE and
bench-level measurements, with MIN/MAX limits defined using modelled estimates that account for part-to-part variations
and expected process spreads. Although unlikely, future refinements to the TYP/MIN/MAX values may be in order as multiple
lots are processed through the factory.
Release A-Z All data based on measurements taken with production-released material derived from multiple lots which have been
fabricated over an extended period of time. MIN/MAX limits may be refined over previous releases as more statistically
significant data is collected to account for process spreads.
Information in this data sheet is specific to the Guerrilla RF, Inc. (“Guerrilla RF”) product identified.
This data sheet, including the information contained in it, is provided by Guerrilla RF as a service to its customers and may be used for informational purposes only by the
customer. Guerrilla RF assumes no responsibility for errors or omissions on this data sheet or the information contained herein. Information provided is believed to be accurate
and reliable, however, no responsibility is assumed by Guerrilla RF for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use.
Guerrilla RF assumes no liability for any data sheet, data sheet information, materials, products, product information, or other information provided hereunder, including the
sale, distribution, reproduction or use of Guerrilla RF products, information or materials.
No license, whether express, implied, by estoppel, by implication or otherwise is granted by this data sheet for any intellectual property of Guerrilla RF, or any third party,
including without limitation, patents, patent rights, copyrights, trademarks and trade secrets. All rights are reserved by Guerrilla RF.
All information herein, products, product information, data sheets, and data sheet information are subject to change and availability without notice. Guerrilla RF reserves the
right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Guerrilla RF may further change its data sheet,
product information, documentation, products, services, specifications or product descriptions at any time, without notice. Guerrilla RF makes no commitment to update any
materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes.
GUERRILLA RF INFORMATION, PRODUCTS, PRODUCT INFORMATION, DATA SHEETS AND DATA SHEET INFORMATION ARE PROVIDED “AS IS” AND WITHOUT WARRANTY OF
ANY KIND, WHETHER EXPRESS, IMPLIED, STATUTORY, OR OTHERWISE, INCLUDING FITNESS FOR A PARTICULAR PURPOSE OR USE, MERCHANTABILITY, PERFORMANCE,
QUALITY OR NON-INFRINGEMENT OF ANY INTELLECTUAL PROPERTY RIGHT; ALL SUCH WARRANTIES ARE HEREBY EXPRESSLY DISCLAIMED. GUERRILLA RF DOES NOT
WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. GUERRILLA RF SHALL
NOT BE LIABLE FOR ANY DAMAGES, INCLUDING BUT NOT LIMITED TO ANY SPECIAL, INDIRECT, INCIDENTAL, STATUTORY, OR CONSEQUENTIAL DAMAGES, INCLUDING
WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS THAT MAY RESULT FROM THE USE OF THE MATERIALS OR INFORMATION, WHETHER OR NO T THE RECIPIENT OF
MATERIALS HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
Customers are solely responsible for their use of Guerrilla RF products in the Customer’s products and applications or in ways which deviate from Guerrilla RF’s published
specifications, either intentionally or as a result of design defects, errors, or operation of products outside of published parameters or design specifications. Customers should
include design and operating safeguards to minimize these and other risks. Guerrilla RF assumes no liability or responsibility for applications assistance, customer product
design, or damage to any equipment resulting from the use of Guerrilla RF products outside of stated published specifications or parameters.

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Data Sheet

RELEASE 0/ DATA SHEET

RELEASE 0/ DATA SHEET

2.0 x 2.0 mm DFN-8 Pin Out (Top View)

2 RF_IN RF Input External match must provide DC block.

3, 4, 5, 6, 8 GND/NC No Connect or Ground No internal connection to die.

7 RF_Out/VDD RF Output Provide device VDD via external bias inductor.

Power Supply Voltage VDD 0 6 V

Maximum Channel Temperature (MTTF >106 Hours) TMAX 170 °C

Maximum Dissapated Power PDISS MAX 500 mW

Charged Device Model CDM 1500 V

Human Body Model HBM 500 V

Storage Temperature TSTG -65 150 °C

Moisture Sensitivity Level MSL 1 −

Caution! ESD Sensitive Device.

Recommended Operating Conditions

Parameter Symbol Min. Typ. Max. Unit Condition

Power Supply Voltage VDD 0 5 6 V

Typical Application Schematic with

Nominal Operating Parameters – General

Parameter Symbol Min. Typ. Max. Unit Condition

Power Supply Current IDD 70 mA Adjustable for optimal IP3.

Enable Current IENABLE 3.5 mA

Switching Rise Time TRISE 1800 ns

Switching Fall Time TFALL 900 ns

Nominal Operating Parameters – RF

Parameter Symbol Min. Typ. Max. Unit Condition

Reverse Isolation S12 -26 dB FRF: 0.7 to 0.96 GHz

+4 dBm POUT per tone at 2 MHz

Output 1 dB Compression Power OP1dB 18.6 20 dBm

Typical Operating Curve Conditions

GRF2070 Typical Operating Curves

GRF2070 Typical Operating Curves

GRF2070 Typical Operating Curves: S-Parameters: 0.7 to 0.96 GHz Tune

Note: Mu Factor ≥ 1.0 implies unconditional stability.

GRF2070 Standard Test Schematic

GRF2070 Evaluation Board Assembly Diagram

M1 Resistor (Jumper) Various - 0 Ohm 0402 ok

M3 Resistor Various 5% Sets IDDQ 0402 ok

M4 Capacitor Murata GJM 47 pF 0402 ok

M8 Inductor Murata LQW 22 nH 0402 ok

M10 Capacitor Murata GRM 0.1 μF 0402 ok

M11 Capacitor Murata GRM 4.7 pF 0402 ok

Evaluation Board DFN8_2x2_RevA

GRF2070 Bias Resistor Selection Curves:

2.0 x 2.0 mm DFN-8 Suggested PCB Footprint (Top View)

2.0 x 2.0 mm DFN-8 Package Dimensions

Package Marking Diagram

Tape and Reel Information

Label Carrier Tape

Tape and Reel Packaging with Reel Diameter Noted (D)

September 8, 2021 Converted format to new template.

Data Sheet Classifications

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