PD- 94094A

SMPS MOSFET IRF7477

HEXFET® Power MOSFET

Applications VDSS Ω)
RDS(on) max (mΩ) ID
l High Frequency Synchronous Buck
30V 8.5@VGS = 10V 14A
Converters for Computers and
10@VGS = 4.5V 11A
Communications
Benefits
A
l Ultra-Low Gate Impedance 1 8
A
S D
l Very Low RDS(on)
2 7
S D
l Fully Characterized Avalanche Voltage
3 6
S D
and Current
4 5
l Low Charge Ratio to Eliminate False Turn G D

On in High Frequency Circuits SO-8

T o p V ie w

Absolute Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current 110
PD @TA = 25°C Maximum Power Dissipation„ 2.5 W
PD @TA = 70°C Maximum Power Dissipation„ 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead ––– 20
RθJA Junction-to-Ambient „ ––– 50 °C/W

Notes  through „ are on page 8

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.5 8.5 VGS = 10V, ID = 14A ƒ
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 7.7 10 VGS = 4.5V, ID = 11A ƒ
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V VDS = VGS, ID = 250µA
––– ––– 20 VDS = 24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 ––– ––– S VDS = 15V, ID = 11A
Qg Total Gate Charge ––– 25 38 ID = 11A
Qgs Gate-to-Source Charge ––– 6.5 ––– nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.2 ––– VGS = 4.5V
Qoss Output Gate Charge ––– 30 ––– VGS = 0V, VDS = 15V
td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V
tr Rise Time ––– 9.8 ––– ID = 11A
ns
td(off) Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω
tf Fall Time ––– 5.9 ––– VGS = 4.5V ƒ
Ciss Input Capacitance ––– 2710 ––– VGS = 0V
Coss Output Capacitance ––– 1120 ––– VDS = 15V
Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 500 mJ
IAR Avalanche Current ––– 8.2 A

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 2.3
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 110

(Body Diode)  p-n junction diode. S

––– 0.80 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ƒ

VSD Diode Forward Voltage
––– 0.65 ––– TJ = 125°C, I S = 11A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 91 140 ns TJ = 25°C, I F = 11A, VR=15V
Qrr Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs ƒ
trr Reverse Recovery Time ––– 90 140 ns TJ = 125°C, IF = 11A, VR=15V
Qrr Reverse Recovery Charge ––– 140 210 nC di/dt = 100A/µs ƒ
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1000 VGS
1000 VGS
TOP 10V TOP 10V
7.0V 7.0V
4.5V 4.5V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

3.7V 3.7V
3.5V 3.5V
3.3V 3.3V
3.0V 3.0V
BOTTOM 2.7V BOTTOM 2.7V
100 100

2.7V
2.7V

10 10

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 14A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

1.5
(Normalized)

TJ = 25 ° C
100 1.0
TJ = 150 ° C

0.5

V DS = 50V
20µs PULSE WIDTH VGS = 10V
10 0.0
2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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100000 12
VGS = 0V, f = 1 MHZ ID = 11A
VDS = 24V
Ciss = Cgs + Cgd, Cds SHORTED VDS = 15V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd 10

10000 Coss = Cds + Cgd

C, Capacitance(pF)

8
Ciss
Coss
1000 6

4
Crss
100

10
0
1 10 100 0 10 20 30 40 50 60

VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100

TJ = 150 ° C 100

10
100µsec

TJ = 25 ° C 10 1msec
1

Tc = 25°C
Tj = 150°C 10msec
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2
0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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Fig 6. On-Resistance Vs. Drain Current

IRF7477

15
RD
VDS

12 VGS
D.U.T.
RG
I D , Drain Current (A)

+
-VDD
9
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6

Fig 10a. Switching Time Test Circuit

3
VDS
90%
0
25 50 75 100 125 150
TC , Case Temperature ( °C)

10%
Fig 9. Maximum Drain Current Vs. VGS
Ambient Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

10 0.20
0.10
0.05

1 0.02
0.01
P DM

t1
0.1 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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0.009

R DS(on) , Drain-to -Source On Resistance ( Ω )

R DS (on) , Drain-to-Source On Resistance ( Ω)

0.012

0.008
VGS = 4.5V 0.010

ID = 14A
0.007

VGS = 10V 0.008

0.006

0.005 0.006
0 20 40 60 80 100 120 3.0 3.4 3.8 4.2 4.6

ID , Drain Current (A) VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.

QG
50KΩ VGS
12V .2µF
.3µF QGS QGD
+
V
1200
D.U.T. - DS
VG
ID
EAS , Single Pulse Avalanche Energy (mJ)

VGS TOP 3.7A

3mA Charge 1000 6.6A
BOTTOM 8.2A
IG ID
Current Sampling Resistors

800

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform 600

400
15 V

V (B R )D S S 200
tp L DRIVE R
VD S

RG D .U .T +
V 0
- DD
IA S A 25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
20V
tp 0.01 Ω
IAS

Fig 15a&b. Unclamped Inductive Test circuit Fig 15c. Maximum Avalanche Energy
and Waveforms Vs. Drain Current
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SO-8 Package Details

IN C H E S M ILLIM E T E R S
D D IM
5
M IN M AX M IN M AX
-B -
A .05 32 .06 88 1.3 5 1.75
A1 .00 40 .00 98 0.1 0 0.25
8 7 6 5
5 B .01 4 .01 8 0.3 6 0.46
E H
-A - 0 .2 5 (.0 1 0 ) M A M C .00 75 .009 8 0.19 0.25
1 2 3 4
D .18 9 .196 4.80 4.98
E .15 0 .15 7 3.8 1 3.99
e e .05 0 B A S IC 1.27 B A S IC
6X θ K x 4 5°
e1 e1 .02 5 B A S IC 0 .635 B A S IC
θ
H .22 84 .244 0 5.8 0 6.20
A
K .01 1 .01 9 0.2 8 0.48
-C - 0 .1 0 (.0 0 4 ) L 6 C
A1 L 0.16 .05 0 0.4 1 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0 .2 5 (.0 1 0 ) M C A S B S
R E C O M M E N D E D F O O T P R IN T
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 0 .7 2 (.0 2 8 )
8X
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 )
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S 8X
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
1 .2 7 ( .0 5 0 )
3X

SO-8 Part Marking

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SO-8 Tape and Reel

TER M IN AL N UM B ER 1

1 2.3 ( .484 )
1 1.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) F EE D D IRE C TIO N

N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .

33 0.00
(12.992)
M AX .

14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
‚ Starting TJ = 25°C, L = 15mH „ When mounted on 1 inch square copper board
RG = 25Ω, IAS = 8.2A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at [Link] for sales contact information. 6/01
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