MUFFAKHAM JAH

COLLEGE OF ENGINEERING AND TECHNOLOGY

PC351EC ELECTRONIC DEVICES LAB

(With effect from the academic year 2015-2016)

STUDENT’S MANUAL

DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING
ELECTRONIC DEVICES LAB ECE DEPT

Vision and Mission of the Institution

Vision
To be part of universal human quest for development and progress by contributing high calibre,
ethical and socially responsible engineers who meet the global challenge of building modern
society in harmony with nature.

Mission
• To attain excellence in imparting technical education from the undergraduate through
doctorate levels by adopting coherent and judiciously coordinated curricular and co-curricular
programs
• To foster partnership with industry and government agencies through collaborative research
and consultancy
• To nurture and strengthen auxiliary soft skills for overall development and improved
employability in a multi-cultural work space
• To develop scientific temper and spirit of enquiry in order to harness the latent innovative
talents
• To develop constructive attitude in students towards the task of nation building and empower
them to become future leaders
• To nourish the entrepreneurial instincts of the students and hone their business acumen.
• To involve the students and the faculty in solving local community problems through
economical and sustainable solutions.
Vision and Mission of ECE Department
Vision
To be recognized as a premier education center providing state of art education and facilitating
research and innovation in the field of Electronics and Communication.

Mission
We are dedicated to providing high quality, holistic education in Electronics and Communication
Engineering that prepares the students for successful pursuit of higher education and challenging
careers in research, R& D and Academics.

Program Educational Objectives of B. E (ECE) Program:

1. Graduates will demonstrate technical competence in their chosen fields of employment by

identifying, formulating, analyzing and providing engineering solutions using current
techniques and tools
2. Graduates will communicate effectively as individuals or team members and demonstrate
leadership skills to be successful in the local and global cross-cultural working environment
3. Graduates will demonstrate lifelong learning through continuing education and professional
development

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4. Graduates will be successful in providing viable and sustainable solutions within societal,
professional, environmental and ethical contexts

MUFFAKHAM JAH COLLEGE OF ENGINEERING AND TECHNOLOGY

BANJARA HILLS, ROAD NO-3, TELANGANA

LABORATORY MANUAL

FOR

ELECTRONIC DEVICES LAB

Prepared by: Checked by:

Approved by:

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MUFFAKHAM JAH COLLEGE OF ENGINEERING AND TECHNOLOGY

DEPARTMENT OF ELECTRONICS AND COMMUNICATIONS ENGINEERING

(Name of the Subject/Lab Course): Electronic Devices

Code: EC231 Programme: UG

Branch: ECE Version No: 1

Year : II Updated on: 20/3/16

Semester :I No. of Pages:

Classification Status(Unrestricted/restricted): Unrestricted

Distribution List :Department, Lab, Library, Lab Incharge

Prepared by: 1) Name : 1) Name :

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EC 231

ELECTRONIC DEVICES LAB

Instruction 3 Periods per week
Duration of University Examination 3 Hours
University Examination 50 Marks
Sessional 25 Marks
Objectives:

1. Demonstrate the characteristics of Semiconductor diodes

2. Realize the filters and rectifiers with and without capacitors.
3. Demonstrate the characteristics of different transistor Configurations
4. Design of Biasing Circuits for BJT and FET Amplifiers
5. Explore the characteristics of special devices: UJT, SCR, Tunnel diode and Photo diode.
List of Experiments:

1. V-I Characteristics of Silicon and Germanium diodes and measurement of static and dynamic
resistances
2. Zener diode characteristics and its application as voltage regulator
3. Design, realization and performance evaluation of half wave rectifiers without filters and with LC
& pi section filters
4. Design, realization and performance evaluation of full wave rectifiers without filters and with LC
& pi section filters
5. Plotting the characteristics of BJT in Common Base configuration and measurement of h-
parameters
6. Plotting the characteristics of BJT in Common Emitter configuration and measurement of h-
parameters
7. Plotting the characteristics of JFET in CS configuration and measurement of Trans-conductance
and Drain resistance
8. BJT biasing circuits
9. FET biasing circuits
10. Common Emitter BJT Amplifier and measurement of Gain, bandwidth, input and output
impedances
11. Common Source FET Amplifier and measurement of Gain, bandwidth, input and output
impedances
12. Emitter Follower / Source Follower circuits and measurement of Gain, bandwidth, input and
output impedances
13. Characteristics of special devices-UJT and SCR
14. Characteristics of Tunnel diode and photo diode
Suggested Reading:

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1. Paul B. Zbar, Albert P. Malvino, Michael A. Miller, Basic Electronics, A Text - Lab Manual, 7th
ed., McGraw Hill Education, 2001.
2. David Bell, Fundamentals of electronic devices and circuits Lab Manual, 5th ed., Oxford
university press, 2009.
3. R.C. Jaeger & T. N. Blalock, Micro Electronic circuit design, 4th ed., Mc Graw Hill Higher
Education, 2011.

Note:Analysis and design of circuits should be carried out using SPICE tools wherever possible a
minimum of 10 Experiments are to be performed

ELECTRONIC DEVICES LAB

GENERAL GUIDELINES AND SAFETY INSTRUCTIONS

1. Sign in the log register as soon as you enter the lab and strictly observe your lab timings.
2. Strictly follow the written and verbal instructions given by the teacher / Lab Instructor. If
you do not understand the instructions, the handouts and the procedures, ask the
instructor or teacher.
3. Never work alone! You should be accompanied by your laboratory partner and / or the
instructors / teaching assistants all the time.
4. It is mandatory to come to lab in a formal dress and wear your ID cards.
5. Do not wear loose-fitting clothing or jewellery in the lab. Rings and necklaces are usual
excellent conductors of electricity.
6. Mobile phones should be switched off in the lab. Keep bags in the bag rack.
7. Keep the labs clean at all times, no food and drinks allowed inside the lab.
8. Intentional misconduct will lead to expulsion from the lab.
9. Do not handle any equipment without reading the safety instructions. Read the handout
and procedures in the Lab Manual before starting the experiments.
10. Do your wiring, setup, and a careful circuit checkout before applying power. Do not
make circuit changes or perform any wiring when power is on.
11. Avoid contact with energized electrical circuits.
12. Do not insert connectors forcefully into the sockets.
13. NEVER try to experiment with the power from the wall plug.
14. Immediately report dangerous or exceptional conditions to the Lab instructor / teacher:
Equipment that is not working as expected, wires or connectors are broken, the
equipment that smells or “smokes”. If you are not sure what the problem is or what's
going on, switch off the Emergency shutdown.
15. Never use damaged instruments, wires or connectors. Hand over these parts to the Lab
instructor/Teacher.
16. Be sure of location of fire extinguishers and first aid kits in the laboratory.
17. After completion of Experiment, return the bread board, trainer kits, wires, CRO probes
and other components to lab staff. Do not take any item from the lab without permission.
18. Observation book and lab record should be carried to each lab. Readings of current lab
experiment are to be entered in Observation book and previous lab experiment should be
written in Lab record book. Both the books should be corrected by the faculty in each lab.

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19. Handling of Semiconductor Components:Sensitive electronic circuits and electronic

components have to be handled with great care. The inappropriate handling of electronic
component can damage or destroy the devices. The devices can be destroyed by driving
to high currents through the device, by overheating the device, by mixing up the polarity,
or by electrostatic discharge (ESD). Therefore, always handle the electronic devices as
indicated by the handout, the specifications in the data sheet or other documentation.
20. Special Precautions during soldering practice
a. Hold the soldering iron away from your body. Don't point the iron towards you.
b. Don't use a spread solder on the board as it may cause short circuit.
c. Do not overheat the components as excess heat may damage the components/board.
d. In case of burn or injury seek first aid available in the lab or at the college dispensary

List of Experiments Page

1. V-I Characteristics of Si, Ge Diodes ……………………………………………...08

2. Zener Diode Characteristics and its application as a voltage regulator ….……….16

3. Half Wave and Full Wave Rectifier Without Filter……………………………….23

4. Half Wave and Full Wave Rectifier With Filter…………………………….…….30

5. Characteristics of a BJT in Common Base Configuration …………………….….36

6. Characteristics of a BJT in Common Emitter Configuration …………….………42

7. BJT Biasing circuits…...……………………………………………….………….50

8. Common Emitter BJT Amplifier………………………………………….………55

9. Common Collector BJT Amplifier………………………………………..………62

10. Characteristics of a JFET in Common source Configuration ……………..……..68

11. Common Source JFET Amplifier………………………………………….……..74

12. UJT Characteristics and Silicon-Controlled Rectifier (SCR) Characteristics…....80

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13. Appendix…………………………………………………………………….……88

Experiment No:1

V - I Characteristics of Si, Ge Diodes

Aim:

1. To plot Volt-Ampere Characteristics of Silicon and Germanium P-N Diode.

2. To find cut-in voltage for Silicon and Germanium P-N Junction diode.
3. To find static and dynamic resistances in both forward and reverse biased conditions.

Components:

Name Quantity
Diodes 1N4007(Si) 1
Diodes DR-25(Ge) 1
Resistor 1K 1
Resistor 3.3K 1

Equipment:

Name Range Quantity

Bread board 1
Regulated power supply 0-30V 1
Digital Ammeter 0-200µA/200mA 1
Digital Voltmeter 0-20V 1
Connecting Wires

Specifications:

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Silicon Diode 1N4007: Germanium Diode DR-25:

Max Forward Current = 1A Max Forward Current = 250mA

Max Reverse Current = 5.0µA Max Reverse Current = 200µA

Max Forward Voltage = 0.8V Max Forward Voltage = 1V

Max Reverse Voltage = 1000V Max Reverse Voltage = 25V

Max Power Dissipation = 30mW Max Power Dissipation = 250mW

Temperature = -65 to 200° C Temperature = -55 to 75° C

Theory:

Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into the
other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a junction
called depletion region (this region is depleted off the charge carriers). This region gives rise to a
potential barrier called Cut-in Voltage. This is the voltage across the diode at which it starts
conducting. The P-N junction can conduct beyond this potential.

The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected the cathode. Then
diode is said to be forward biased. In this condition the height of the potential barrier at the
junction is lowered by an amount equal to given forward biasing voltage. Both the holes from p-
side and electrons from n-side cross the junction simultaneously and constitute a forward current
from n-side (injected minority current – due to holes crossing the junction and entering P- side of
the diode). Assuming current flowing through the diode to be very large, the diode can be
approximated as short- circuited switch.

If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the input
supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this
condition an amount equal to reverse biasing voltage increases the height of the potential barrier
at the junction. Both the holes on P-side and electrons on N-side tend to move away from the

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junction there by increasing the depleted region. However the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the diode.
This current is negligible hence the diode can be approximated as an open circuited switch.

The volt-ampere characteristics of a diode explained by the following equations:

VD
I = IO e η VT − 1

Where ,I = current flowing in the diode, I0 = reverse saturation current

VD = Voltage applied to the diode

VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp)

= 1(for Ge) and 2 (for Si)

It is observed that Ge diodes has smaller cut-in-voltage when compared to Si diode. The reverse
saturation current in Ge diode is larger in magnitude when compared to silicon diode.

Theoretically the dynamic resistance of a diode is determined using the following equation:
Dynamic Resistance:
𝜂 𝑉𝑇
𝑅𝐷 =
I

Circuit Diagrams:

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Fig. (1) - Forward Bias Condition

Fig. (2) - Reverse Bias Condition

Procedure:

Forward Bias Condition:

1. Connect the components as shown in the circuit diagram (1).

2. Vary the supply voltage such that the voltage across the Silicon diode varies from 0 to 0.6
V in steps of 0.1 V and in steps of 0.02 V from 0.6 to 0.76 V. In each step record the
current flowing through the diode as I.
3. Repeat the above steps for Germanium diode too but with the exception that the voltage
across the diode should be varied in steps of 0.01 V from 0.1 to 0.3 V in step-2.

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Reverse Bias Condition:

1. Connect the diode in the reverse bias as shown in the circuit diagram (2)
2. Vary the supply voltage such that the voltage across the diode varies from 0 to 10V in
steps of 1 V. Record the current flowing through the diode in each step.
3. Repeat the above steps for Germanium diode too and record the current in each step.
4. Now plot a graph between the voltage across the diode and the current flowing through
the diode in forward and reverse bias, for Silicon and Germanium diodes on separate
graph sheets. This graph is called the V-I characteristics of the diode.
5. Calculate the static and dynamic resistance of each diode in forward and reverse bias
using the following formulae.

Static resistance, R = V/I

Dynamic resistance, r = ∆V/∆I

Observations:

(a) Forward and Reverse bias characteristics of Silicon diode

Forward Bias Condition: Reverse Bias Condition:

S. No. Forward Forward

Voltage Current
across the through the

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diode diode S. No. Reverse Reverse

Voltage Current
Vd (Volt) Id (mA) across the through the
diode diode

VR (Volt) IR (µA)

(b) Forward and Reverse bias characteristics of Germanium diode

Forward Bias Condition: Reverse Bias Condition:

S. No. Forward Forward S. No. Reverse Reverse

Voltage Current Voltage Current
across the through the across the through the
diode diode diode diode

Vd (Volt) Id (mA) Vr (Volt) IR (µA)

Graph:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph
sheet.
2. Now mark +ve X-axis as Vf, -ve X-axis as VR, +ve Y-axis as If and –ve Y-axis as IR.

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3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si
reverse biased condition in third Quadrant.
4. Repeat the same procedure for plotting the Germanium characteristics.

Calculations from Graph:

Static forward Resistance Static Reverse Resistance

Dynamic Forward Resistance Dynamic Reverse Resistance

Precautions:

1. While doing the experiment do not exceed the readings of the diode. This may lead to
damaging of the diode.

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2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.

Result:

Cut in voltage = ____ V

Static Forward Resistance = ______

Dynamic Forward Resistance = ______

Static Reverse Resistance = ______

Dynamic Reverse Resistance = ______

Volt-Ampere Characteristics of Silicon P-N Diode are studied.

Viva Questions:

1. What are trivalent and pentavalent impurities?

Ans: Doping is the process of adding impurity atoms to intrinsic silicon or germanium to
improve the conductivity of the semiconductor.
Commonly Used Doping Elements
Trivalent Impurities to make p-Type: Aluminum (Al), Gallium (Ga), Boron(B) and Indium (In).
Pentavalent Impurities to make n-type: Phosphorus (P), Arsenic (As), Antimony (Sb) and
Bismuth (Bi).

2. How PN junction diode does acts as a switch?

Ans: Apply voltage in one direction; it acts like an open circuit. Reverse the polarity of the
voltage and it acts like a short circuit.
3. Diode current equation?

Ans:

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4. What is the value of Vt at room temperature?

Ans: 25mV

5. What is cut-in-voltage ?

Ans: The forward voltage at which the current through the junction starts increasing rapidly is
called as the cut-in voltage. It is generally 0.7V for a Silicon diode and 0.3V for a germanium
diode.

6. Dynamic resistance expression?

𝜂 𝑉𝑇
Ans: =
I

Experiment No.:2

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Zener Diode Characteristics and its application as a Voltage Regulator

Aim:

1. To plot Volt-Ampere Characteristics of Zener Diode.

2. To find Zener break down voltage in reverse biased conditions.
3. To study the operation of Zener Diode as a voltage shunt regulator.

Components:

Name Quantity
Zener Diodes 1N4735A/ FZ 6.2 1
Resistor 1K 1

Equipments:

Name Range Quantity

Bread board 1
Regulated power supply 0-30V 1
Digital Ammeter 200mA 1
Digital Voltmeter 0-20V 1
Decade Resistance Box 1
Connecting Wires

Specifications:

Breakdown Voltage = 5.1V

Power dissipation = 0.75W

Max Forward Current = 1A

Theory:

Zener diode is a heavily doped Silicon diode. An ideal P-N junction diode does not conduct in
reverse biased condition. A Zener diode conducts excellently even in reverse biased condition.
These diodes operate at a precise value of voltage called break down voltage.

A Zener diode when forward biased behaves like an ordinary P-N junction diode.

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A Zener diode when reverse biased can undergo avalanche break down or zener break down.

Avalanche Break down:

If both p-side and n-side of the diode are lightly doped, depletion region at the junction widens.
Application of a very large electric field at the junction increases the kinetic energy of the charge
carriers which collides with the adjacent atoms and generates charge carriers by breaking the
bond, they in-turn collides with other atoms by creating new charge carriers, this process is
cumulative which results in the generation of large current resulting in Avalanche Breakdown.

Zener Break down:

If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces,
it leads to the development of strong electric field, application of even a small voltage at the
junction may rupture covalent bond and generate large number of charge carriers. Such sudden
increase in the number of charge carriers results in Zener break down.

Regulator:

It is an electronic circuit that can provide a stable DC voltage irrespective of variations in the
supply voltage, load current and temperature. A Zener diode can be used as a regulator.

Circuit Diagram:

Fig(1)- Forward Bias Condition:

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Fig(2)- Reverse Bias Condition:

Fig(3)- Zener Diode Regulator : Line Regulation and Load Regulation

Procedure:

Forward Bias Condition:

1. Connect the circuit as shown in figure (1).

2. Vary VF gradually from 0 to 0.6 V in steps of 0.1 V and in steps of 0.02 V from 0.6 to
0.76 V. In each step record the current flowing through the diode as IF.
3. Tabulate different forward currents obtained for different forward voltages.

Reverse Bias Condition:

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1. Connect the Zener diode in reverse bias as shown in the figure (2). Vary the voltage
across the diode in steps of 1V from 0 V to 6 V and in steps 0.1 V till its breakdown
voltage is reached. In each step note the current flowing through the diode
2. Plot a graph between V and I . This graph will be called the V-I characteristics of Zener
diode. From the graph find out the breakdown voltage for the diode.

Line regulation Characteristics:

1) Connect the circuit as shown in figure-3. Use a Decade Resistance Box (DRB) in place of
the load.
2) Select load resistance as 1 K  . Vary the supply voltage in steps of 1 volt from 0 to 15
volt and in each step note down the corresponding value of load voltage (VL).
3) Plot a graph between the supply voltage VS and the output voltage VL. This graph is
called the line regulation characteristics.

Load regulation characteristics:

1) Connect the circuit as shown in figure-3. Use a Decade Resistance Box(DRB) in place of
the load.
2) Set the supply voltage to 12 V and adjust the load current to 0 mA by keeping the
resistance in the DRB at its maximum value.
3) Vary load resistance such that the load current(IL) is increased in steps of 1 mA from 0
mA to 10 mA and note the voltage at the output(VL). The supply voltage must be
maintained constant at 12 V.
4) Plot a graph between the load current IL and the output voltage VL. This graph is called
the load regulation characteristics.

Observations:

Forward Bias Condition: Reverse Bias Condition:

Forward Voltage Forward Current Reverse Voltage Reverse Current

S.No. across the diode through the diode S.No. across the diode through the diode
VF (volts) IF (mA) VR (volts) IR (mA)

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b) Line regulation characteristics: c) Load regulation characteristics:

S. No. VS(Volt) VL(volt) S. No. IL (mA) VL(volt)

Graph:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph
sheet.
2. Now mark +ve X-axis as VF, -ve X-axis as VR, +ve Y-axis as IF and –ve Y-axis as IR.
3. Mark the readings tabulated for forward biased condition in first Quadrant and reverse
biased condition in third Quadrant.

Fig(4).VI Characteristics of Zener Diode

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Fig(5). Line Regulation Fig(6). Load Regulation

Calculations from Graph:

Precautions:

1. While doing the experiment do not exceed the readings of the diode. This may lead to
damaging of the diode.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.

Result:

1. The Zener Diode Characteristics have been studied.

2. The breakdown voltage of Zener diode in reverse bias was found to be = _____
3. Zener Diode as a shunt voltage regulator is studied.

Viva Questions:

1. What is the difference between p-n Junction diode and zener diode?

Ans: A zener is designed to operate stably in reverse breakdown, which is designed to be at a

low voltage, between 3 volts and 200 volts. The breakdown voltage is specified as a voltage with
a tolerance, such as 10 volts ±5%, which means the breakdown voltage (or operating voltage)
will be between 9.5 volts and 10.5 volts.
A signal diode or rectifier will have a high reverse breakdown, from 50 to 2000 volts, and is
NOT designed to operate in the breakdown region. So exceeding the reverse voltage may result

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in the device being damaged. In addition, the breakdown voltage is specified as a minimum only.
Forward characteristics are similar to both, although the zener's forward characteristics is usually
not specified, as the zener will never be used in that region. A signal diode or rectifier has the
forward voltage specified as a max voltage at one or more current levels.

2. What is break down voltage?

Ans: The breakdown voltage of a diode is the minimum reverse voltage to make the diode
conduct in reverse.

3. What are the applications of Zener diode?

Ans: Zener diodes are widely used as voltage references and as shunt regulators to regulate the
voltage across small circuits.

4. What is cut-in-voltage ?

Ans: The forward voltage at which the current through the junction starts increasing rapidly, is
called the knee voltage or cut-in voltage. It is generally 0.6v for a Silicon diode.

5. What is voltage regulator?

Ans: A voltage regulator is an electronic circuit that provides a stable dc voltage independent of
the load current, temperature and ac line voltage variations

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Experiment No:3

Half Wave and Full Wave Rectifier Without Filter

Aim: (i) To study the operation of Half wave and Full wave rectifier without filter

(ii) To find its:

1. Ripple Factor
2. Efficiency
3. Percentage Regulation

Components:

Name Quantity
Diodes 1N4007(Si) 2
Resistor 1K 1

Equipment:

Name Range Quantity

CRO (0-20)MHz 1
CRO probes 2
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
Transformer 220V/9V, 50Hz 1
Connecting Wires

Specifications:

Silicon Diode 1N4007:

Max Forward Current = 1A

Max Reverse Current = 5.0µA

Max Forward Voltage = 0.8V

Max Reverse Voltage = 1000V

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Max Power Dissipation = 30mW

Temperature = -65 to 200° C

Theory:

A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a signal that is
a combination of AC and DC components.

A half wave rectifier makes use of single diode to carry out this conversion. It is named so as the
conversion occurs for half input signal cycle.

During the positive half cycle, the diode is forward biased and it conducts and hence a current
flows through the load resistor.

During the negative half cycle, the diode is reverse biased and it is equivalent to an open circuit,
hence the current through the load resistance is zero. Thus the diode conducts only for one half
cycle and results in a half wave rectified output.

A full wave rectifier makes use of a two diodes to carry out this conversion. It is named so as the
conversion occurs for complete input signal cycle.

The full-wave rectifier consists of a center-tap transformer, which results in equal voltages above
and below the center-tap. During the positive half cycle, a positive voltage appears at the anode
of D1 while a negative voltage appears at the anode of D2. Due to this diode D1 is forward
biased it results in a current Id1 through the load R.

During the negative half cycle, a positive voltage appears at the anode of D2 and hence it is
forward biased. Resulting in a current Id2 through the load at the same instant a negative voltage
appears at the anode of D1 thus reverse biasing it and hence it doesn‟t conduct.

Ripple Factor:

Ripple factor is defined as the ratio of the effective value of AC components to the average DC
value. It is denoted by the symbol „γ‟.

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𝑉 𝑉
𝛾𝐻𝑊𝑅 = 𝑉𝐴𝐶 = 1.21 𝛾𝐹𝑊𝑅 = 𝑉 𝐴𝐶 = 0.48
𝐷𝐶 𝐷𝐶

Rectification Factor:

The ratio of output DC power to input Ac power is defined as efficiency.

𝑉𝐷𝐶 2
𝜂= 𝜂𝐻𝑊𝑅 = 40.6% 𝜂𝐹𝑊𝑅 = 81%
𝑉𝐴𝐶 2

Percentage of Regulation:

It is a measure of the variation of AC output voltage as a function of DC output voltage.

Percentage of regulation = %

VNL = Voltage across load resistance, when minimum current flows through it.

VFL = Voltage across load resistance, when maximum current flows through.

For an ideal rectifier, the percentage regulation is 0 percent. The percentage of regulation is very
small for a practical half wave and full wave rectifier.

Peak- Inverse – Voltage (PIV):

It is the maximum voltage that has to be with stood by a diode when it is reverse biased

PIVHWR = Vm PIVFWR = 2Vm

Comparison of Half-wave and Full-wave rectifier

S.No Particulars Type of Rectifier

Half-Wave Full-Wave
1. No. of diodes 1 2
2. Maximum Rectification 40.6% 81.2%

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Efficiency
3. Vd.c (no load) 𝑉𝑚 2𝑉𝑚
𝜋 𝜋
4. Ripple Factor 1.21 0.48
5. Peak Inverse Voltage Vm 2Vm
6. Output Frequency f 2f
7. Transformer Utilization Factor 0.287 0.693

Circuit Diagram:

Half wave Rectifier (without filter):

Figure1: Circuit diagram of Half-wave rectifier

Full Wave Rectifier (without filter):

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Figure 2: Circuit diagram of Full wave rectifier

Procedure:

PART-I: Half wave rectifier without filter:

1. Connect the circuit as shown in the figure-(1).

2. Connect the multimeter across the 1kΩ load.
3. Measure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
4. Now calculate the ripple factor using the following formula.
V AC
Ripple factor(  ) =
V DC

5. Connect the CRO channel-1 across input and channel-2 across output i.e load and
Observe the input and output Waveforms.
6. Now calculate the peak voltage of input and output waveforms and also the frequency.

PART-II: Full wave rectifier without filter:

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1. Connect the circuit as shown in the figure-(2).

2. Repeat the above steps 2-6
3. Plot different graphs for wave forms and ripple factor

Observations:

Table 1: Half wave rectifier without Filter

VAC(V) VDC(V) Ripple Input Signal Output Signal

Factor
Vm Vm Frequency Vm Frequency
𝑉𝑎𝑐
γ=𝑉𝑑𝑐 p-p(v) peak(v) (Hz) p-p(v)
(Hz)

Table 2: Full wave rectifier without Filter

VAC(V) VDC(V) Ripple Input Signal Output Signal

Factor
Vm Vm Frequency Vm Frequency
𝑉𝑎𝑐
γ =𝑉𝑑𝑐 p-p(v) peak(v) (Hz) p-p(v)
(Hz)

Calculations:
𝑉
1. Ripple Factor = 𝛾𝐻𝑊𝑅 = 𝑉𝐴𝐶
𝐷𝐶

𝑉𝑁𝐿 −𝑉𝐹𝐿
2. Percentage Regulation = ×%
𝑉𝐹𝐿

Expected Waveforms:

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Result:

1. Half Wave and Full Wave rectifier characteristics are studied.

2. Ripple factor of Half wave rectifier = -------------
3. Ripple factor of Full wave rectifier = -------------
4. Regulation of Half wave rectifier = -------------
5. Regulation of Full wave rectifier = -------------

Viva Questions:

1. What is a rectifier?

Ans: A rectifier is an electrical device that converts alternating current (AC), which periodically
reverses direction, to direct current (DC), which flows in only one direction. The process is
known as rectification.

2. What is a ripple factor?

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Ans: Ripple factor can be defined as the variation of the amplitude of DC (Direct current) due to
improper filtering of AC power supply. it can be measured by RF = vrms / vdc

3. What is efficiency?

Ans: Rectifier efficiency is the ratio of the DC output power to the AC input power.

4. What is PIV?

Ans: The peak inverse voltage is either the specified maximum voltage that a diode rectifier can
block, or, alternatively, the maximum that a rectifier needs to block in a given application.

5. What are the applications of rectifier?

Ans: The primary application of rectifiers is to derive DC power from an AC supply. Virtually
all electronic devices require DC, so rectifiers are used inside the power supplies of virtually all
electronic equipment. Rectifiers are also used for detection of amplitude modulated radio signals.
rectifiers are used to supply polarized voltage for welding.

6. Give some rectifications technologies?

Ans: Synchronous rectifier, Vibrator, Motor-generator set , Electrolytic ,Mercury arc, and Argon
gas electron tube.

7. What is the efficiency of bridge rectifier?

Ans: 81 %

Experiment No:4

Half Wave and Full Wave Rectifier With Filter

Aim: (i) To study the operation of a Half wave and Full wave rectifier with filters
(ii) To find its:

1. Ripple Factor
2. Percentage Regulation

Components:

Name Quantity
Diodes 1N4007(Si) 2
Resistor 1K 1

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Capacitor 100µF 2
Inductor (35 mH), 1

Equipment:

Name Range Quantity

CRO (0-20)MHz 1
CRO probes 2
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
Transformer 220V/9V, 50Hz 1
Connecting Wires

Specifications:

Silicon Diode 1N4007:

Max Forward Current = 1A

Max Reverse Current = 5.0µA

Max Forward Voltage = 0.8V

Max Reverse Voltage = 1000V

Max Power Dissipation = 30mW

Temperature = -65 to 200° C

Theory:

A rectifier is a circuit that converts a pure AC signal into a pulsating DC signal or a signal that is
a combination of AC and DC components.

In DC supplies, a rectifier is often followed by a filter circuit which converts the pulsating DC
signal into pure DC signal by removing the AC component.

An L-section filter consists of an inductor and a capacitor connected in the form of an inverted L.

A 𝜋- section filter consists of two capacitors and one induction in the form symbol pi.

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Ripple Factor:

Ripple factor is defined as the ratio of the effective value of AC components to the average DC
value. It is denoted by the symbol „γ‟.

𝑉 𝜋 𝑋𝐶 1
𝛾𝐻𝑊𝑅 𝐿−𝑠𝑒𝑐𝑡𝑖𝑜𝑛 = 𝑉 𝐴𝐶 = 2 where 𝑋𝐿 = 𝜔𝐿, 𝑋𝐶 =
𝜔𝐶
𝐷𝐶 2 𝑋𝐿

𝑉 𝑋𝐶1 𝑋𝐶2 1
𝛾𝐹𝑊𝑅 𝜋−𝑠𝑒𝑐𝑡𝑖𝑜𝑛 = 𝑉𝐴𝐶 = 2 where 𝑋𝐿 = 2𝜔𝐿, 𝑋𝐶 = 2𝜔𝐶
𝐷𝐶 𝑅 𝑋𝐿

Circuit Diagram:

Half Wave Rectifier (with L-section filter):

Figure 1: Half wave rectifier with L-section Filter

Full Wave Rectifier (with π-section filter):

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Figure 2: Full wave rectifier with π-section filter

Procedure:

PART-I:

Half wave rectifier with L-section filter:

7. Connect the circuit as shown in the figure-(1).

8. Connect the multimeter across the 1kΩ load.
9. Meassure the AC and DC voltages by setting multimeter to ac and dc mode respectively.
10. Now calculate the ripple factor using the following formula.
V AC
Ripple factor(  ) =
V DC

11. Connect the CRO channel-1 across input and channel-2 across output i.e load and
Observe the input and output Waveforms.
12. Now calculate the peak voltage of input and output waveforms and also the frequency.
PART-II: Full wave rectifier with 𝜋-section filter:

13. Connect the circuit with filter as shown in the figure-(2).

14. Repeat the above steps 2-6

Observations:
Table 1: Half wave rectifier with L-section filter

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VAC(V) VDC(V) Ripple Input Signal Output Signal

Factor
Vm Vm Frequency Vm Frequency
𝑉𝑎𝑐
γ=𝑉𝑑𝑐 p-p(v) peak(v) (Hz) p-p(v)
(Hz)

Table 2: Full wave rectifier with pi-Section filter

VAC(V) VDC(V) Ripple Input Signal Output Signal

Factor
Vm Vm Frequency Vm Frequency
𝑉𝑎𝑐
γ=𝑉𝑑𝑐 p-p(v) peak(v) (Hz) p-p(v)
(Hz)

Calculations:

1. Ripple factor :

𝑉𝑎𝑐
𝐻𝑊𝑅𝐿−𝑆𝐸𝐶𝑇𝐼𝑂𝑁 =
𝑉𝑑𝑐

𝑉𝑎𝑐
𝐹𝑊𝑅𝜋−𝑆𝑒𝑐𝑡𝑖𝑜𝑛 =
𝑉𝑑𝑐

𝑉𝐷𝐶𝑁𝐿 −𝑉𝐷𝐶 𝐹𝐿
2. Percentage Regulation = × 100 %
𝑉𝐷𝐶𝐹𝐿

Expected Waveforms:

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Result:

Full Wave rectifier characteristics are studied.

1. Ripple factor of Half wave with L-section filter = -------------
2. Ripple factor of Full wave with π-section filter = -------------
3. Regulation of Half wave with L-section filter = -------------
4. Regulation of Half wave with π -section filter = -------------

Viva Questions:

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1. What is filter ?

Ans: Electronic filters are electronic circuits which perform signal processing functions,
specifically to remove unwanted frequency components from the signal.

2. PIV center tapped FWR?

Ans: 2Vm.

3. In filters capacitor is always connected in parallel, why?

Ans: Capacitor allows AC and blocks DC signal, in rectifier for converting AC to DC, capacitor
placed in parallel with output, where output is capacitor blocked voltage. If capacitance value
increases its capacity also increases which increases efficiency of rectifier.

Experiment No:5

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Characteristics of a BJT in Common Base Configuration

Aim:

To study the input and output characteristics of a transistor in common base configuration.

Components:

Name Quantity
Transistor BC 107 1
Resistor 1K 1

Equipment:

Name Range Quantity

Bread board 1
Regulated power supply 0-30V 1
Digital Ammeter 200mA 1
Digital Voltmeter 0-20V 1
Connecting Wires 1

Specifications:

Transistor BC 107:

 Max Collector Current= 0.1A

 Vceo max= 50V
 VEB0 = 6V
 VCB0 = 50V
 Collector power dissipation = 500mW
 Temperature Range = -65 to +150 0C
 hfe = 110 - 220

Theory:

Bipolar Junction Transistor (BJT) is a three terminal (emitter, base, collector) semiconductor
device. There are two types of semiconductors namely NPN and PNP. It consists of two PN
junctions namely emitter junction and collector junction. Based on biasing of these junctions the
different regions of operation of the BJT are

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JE JC REGION APPLICATION

RB RB CUTT OFF OFF SWITCH

FB FB SATURATION ON SWITCH

FB RB ACTIVE AMPLIFIER

RB FB REVERSE ACTIVE ATTENUATOR

The collector current equation is given as

𝐼𝐶 = 𝛼 𝐼𝐸 + 𝐼𝐶𝑂

Where 𝐼𝐶𝑂 is called as reverse saturation current

The relation between α, β , γ of CB, CE, CC are

𝜷 𝜶 𝟏
𝜶= 𝜷 = 𝜸 =𝟏+ 𝜷=
𝟏+𝜷 𝟏−𝜶 𝟏 − 𝜶

The basic circuit diagram for studying input characteristics is shown in the figure. The input is
applied between emitter and base, the output is taken from collector and base. Here base of the
transistor is common to both input and output and hence the name common base configuration.
Input characteristics are obtained between the input current and input voltage at constant output
voltage. It is plotted between VEE and IE at constant VCB in CB configuration. Output
characteristics are obtained between the output voltage and output current at constant input
current. It is plotted between VCB and IC at constant IE in CB configuration.

Pin assignment of Transistor:

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Circuit Diagram:

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCB = 0V by varying the RPS .
3. Varying VEE gradually, note down emitter current IE and emitter-base voltage(VBE).
4. Repeat above procedure (step 3) for VCB = 10V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IE = 2mA by varying VEE.
3. Varying VCC gradually, note down collector current IC and collector-base voltage(VCB).
4. Repeat above procedure (step 3) for IE = 4mA, 8 mA .

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Observations:

Input Characteristics Output Characteristics

VCB = 0V VCB = 10V IE = 2mA IE = 4mA IE = 8mA
VEE(V) IE(mA) VEE(V) IE(mA) VCB(V) IC(mA) VCB(V) IC(mA) VCB(V) IC(mA)

Expected Waveform

Input Characteristics:

Output Characteristics:

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1. Plot the input characteristics for different values of VCB by taking VEE on X-axis and IE
on Y-axis.
2. Plot the output characteristics by taking VCB on X-axis and taking IC on Y-axis taking IE
as a parameter.
Calculations from Graph:

1. Input Characteristics: To obtain input resistance find VEE and IE for a constant VCB
on one of the input characteristics.

2. Output Characteristics: To obtain output resistance find IC and VCB at a constant

IE.

Result:

Input and Output characteristics of a Transistor in Common Base Configuration are studied.

Ri has been found out to be ___________.

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Ro has been found out to be __________.

Viva Questions:

1. What is transistor?

Ans: A transistor is a semiconductor device used to amplify and switch electronic signals and
electrical power. It is composed of semiconductor material with at least three terminals for
connection to an external circuit. The term transistor was coined by John R. Pierce as a
portmanteau of the term "transfer resistor".

2. Write the relation between α, β and γ?

𝜷 𝜶 𝟏
Ans: 𝜶 = 𝜷 = 𝜸 =𝟏+ 𝜷=
𝟏+𝜷 𝟏−𝜶 𝟏 − 𝜶

3. What is the range of α ?

Ans: The important parameter is the common-base current gain, . The common-base current
gain is approximately the gain of current from emitter to collector in the forward-active region.
This ratio usually has a value close to unity; between 0.98 and 0.998.

4. Why is α is less than unity?

Ans: It is less than unity due to recombination of charge carriers as they cross the base region.

5. Input and output impedance equations for CB configuration?

Ans: hib=VEB/IE,1/hob=VCB/IC

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Experiment No:6

Characteristics of a BJT in Common Emitter Configuration

Aim:

1. To plot the Characteristics of a BJT in Common Emitter Configuration.

2. To measure the h-parameters of a BJT in Common Emitter Configuration.

Components:

Name Quantity
Transistor BC 107 1
Resistor 1K 1

Equipment:

Name Range Quantity

Bread Board 1
Regulated power supply 0-30V 2
Digital Ammeter 0-200mA/0-200µA 1
Digital Voltmeter 0-20V 2

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Connecting Wires

Specifications:

For Transistor BC 107:

 Max Collector Current= 0.1A

 Vceo max= 50V
 VEB0 = 6V
 VCB0 = 50V
 Collector power dissipation = 500mW
 Temperature Range = -65 to +150 0C
 hfe = 110 - 220

Theory:

A BJT is called as Bipolar Junction Transistor and it is a three terminal active device which has
emitter, base and collector as its terminals. It is called as a bipolar device because the flow of
current through it is due to two types of carriers i.e., majority and minority carriers.

A transistor can be in any of the three configurations viz, Common base, Common emitter and
Common Collector.

The relation between , β , γ of CB, CE, CC are

𝜷 𝜶 𝟏
𝜶= 𝜷 = 𝜸 =𝟏+ 𝜷=
𝟏+𝜷 𝟏−𝜶 𝟏 − 𝜶

In CE configuration base will be input node and collector will be the output node .Here emitter
of the transistor is common to both input and output and hence the name common emitter
configuration.

The collector current is given as

𝐼𝐶 = 𝛽 𝐼𝐵 + 1 + 𝛽 𝐼𝐶𝑂

Where 𝐼𝐶𝑂 is called as reverse saturation current

A transistor in CE configuration is used widely as an amplifier. While plotting the characteristics

of a transistor the input voltage and output current are expressed as a function of input current
and output voltage.

i.e, VBE = f ( IB, VCE ) and

IC = f ( IB, VCE )

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Transistor characteristics are of two types.

Input characteristics:- Input characteristics are obtained between the input current and input
voltage at constant output voltage. It is plotted between VBE and IB at constant VCE in CE
configuration

Output characteristics:- Output characteristics are obtained between the output voltage and
output current at constant input current. It is plotted between VCE and IC at constant IB in CE
configuration

The different regions of operation of the BJT are

JE JC REGION APPLICATION

RB RB CUTT OFF OFF SWITCH

FB FB SATURATION ON SWITCH

FB RB ACTIVE AMPLIFIER

RB FB REVERSE ACTIVE ATTENUATOR

The Hybrid model of BJT and its typical values are as shown

Parameter Typical value

𝑕𝑖𝑒 1.1 𝐾 Ω
𝑕𝑟𝑒 250 µ
𝑕𝑓𝑒 50
𝑕𝑜𝑒 25 µ℧

The basic circuit diagram for studying input and output characteristics is shown in the circuit
diagrams.

Circuit Diagram:

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Fig.(1) - Input Characteristics

Fig. (2) - Output Characteristics

Pin assignment of Transistor:

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Procedure:

Input Characteristics:

1) Connect the circuit as shown in fig.(1). Adjust all the knobs of the power supply to their
minimum positions before switching the supply on.
2) Adjust the VCE to 0 V by adjusting the supply VCC.
3) Vary the supply voltage VBB so that VBE varies in steps of 0.1 V from 0 to 0.5 V and then in steps
of 0.02 V from 0.5 to 0.7 V. In each step note the value of base current IB.
4) Adjust VCE to 1, 2V and repeat step-3 for each value of VCE.
5) Plot a graph between VBE and IB for different values of VCE. These curves are called input
characteristics

Output Characteristics:

1) Connect the circuit as shown in fig. (2). All the knobs of the power supply must be at the
minimum position before the supply is switched on.
2) Adjust the base current IB to 20 µA by adjusting the supply VBB.
3) Vary the supply voltage VCC so that the voltage VCE varies in steps of 0.2 V from 0 to 2 V and
then in steps of 1 V from 2 to 10 V. In each step the base current should be adjusted to the present
value and the collector current IC should be recorded.
4) Adjust the base current at 40, 60 µA and repeat step-3 for each value of IB.
5) Plot a graph between the output voltage VCE and output current IC for different values of the input
current IB. These curves are called the output characteristics.
Observations:
Table .(1) Input Characteristics

VCE = 0V VCE = 5V

VBE(V) IB(µA) VBE(V) IB(µA)

Table.(2) Output Characteristics

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IB = 20µA IB = 40µA IB = 60µA

VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

Graph:

Fig.(3). Input Characteristics

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Fig.(4). Output Characteristics

Calculations from Graph:

1. Input Impedance (hie): It is ratio of input base voltage (VBE) to the change in input base
current(IB) with the output collector voltage (VCE) kept constant. It is the slope of the
input characteristics IB vs VBE .

Therefore, (Ω)

2. Reverse voltage gain (hre) :It is the ratio of the change in the input base voltage (VBE )
and the corresponding change in output collector(IC) voltage with constant input base
current(IB).It is the slope of VBE vs VCE curve.

Therefore,

3.Forward Current Gain (hfe): It is the ratio of the change in the output collector
current(IC) to the corresponding change in the input base current (IB) keeping output
collector voltage (VCE) constant. It is the slope of Ic vs IB curve .

Therefore,

4.Output Admittance (hoe): It is the ratio of change in the output collector current (Ic) to the
corresponding change in the output collector voltage(VCE) with the input base current (IB)
kept constant. It is the slope of the output characteristics VCE vs Ic

Therefore, (Ʊ)

Inference:

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1. Medium input and output resistances.

2. Smaller values if VCE comes earlier cut-in-voltage.
3. Increase in the value of IB causes saturation of the transistor of an earlier voltage.

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor. This may
lead to damage the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

1. Input and output Characteristics of a BJT in Common Emitter Configuration are

studied.
2. Measured the h-parameters of a BJT in Common Emitter Configuration.

Viva Questions:

1. Can we replace transistor by two back to back connected diodes?

Ans: No, because the doping levels of emitter(heavily doped), base(lightly doped) and
collector(doping level greater than base and less than emitter) terminals are different from p and
n terminals in diode.

2. For amplification CE is preferred, why?

Ans: Because amplification factor beta is usually ranges from 20-500 hence this configuration
gives appreciable current gain as well as voltage gain at its output on the other hand in the
Common Collector configuration has very high input resistance(~750K ) & very low output
resistance(~25 ) so the voltage gain is always less than one & its most important application is
for impedance matching for driving from low impedance load to high impedance source

3. To operate a transistor as amplifier, emitter junction is forward biased and collector

junction is reverse biased, why?

Ans: Voltage is directly proportional to Resistance. Forward bias resistance is very less
compared to reverse bias. In amplifier input forward biased and output reverse biased so voltage
at output increases with reverse bias resistance.

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4. Which transistor configuration provides a phase reversal between the input and output
signals?

Ans: Common emitter configuration (180 DEG)

5. What is the range if β?

Ans: Beta is usually ranges from 20-500

Experiment No:7

BJT Biasing Circuits

Aim:- To design a fixed bias, collector to base bias and a self bias circuit and determine their stability
factors experimentally.

Components:

Name Quantity
Transistor (BEL100N / SL 100 ), 1
Resistors (from design) 1

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Equipment:

Name Range Quantity

Bread board 1
Regulated power supply 0-30V 1
Soldering iron 1
Digital Ammeter 0-200µA/200mA 1
Digital Voltmeter 0-20V 1
Connecting Wires

Specifications:

BJT Transistor BEL100N:

Max Collector base voltage (open emitter) VCBO = 60V

Max Emitter base voltage (open collector) VEBO= 7V

Max Collector current (d.c.) = 500mA

Max Junction Temperature = 200°C

Max Total Power Dissipation = 0.8W

D.C. Current gain at IC=150mA ,VCE=1V hfe= 50 to 280

Theory:

A transistor acts as an amplifier in active region. Biasing circuit is used in a transistor to keep in the active
region. Following are the three common biasing circuits used in transistors.

1) Fixed bias circuit:- It is named so because it provides a fixed value of base current for given values of
VCC and Rb.

2) Collector to base bias circuit:- In this circuit the base bias is taken from the collector by connecting a
resistor between base and collector.

3) Self bias circuit:- In this circuit the base bias is obtained by using a voltage divider network. An
emitter resistor is used to limit the collector current and hence the Q-point is stable.

Also the reverse saturation current doubles for every 100C rise in temperature, hence Q-point should
be stable.

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Stability factor is defined as the rate of change of collector current with reverse saturation current. For a
stable Q-point stability factor should be as small as possible. A self bias circuit provides the least stability
factor out of all the configurations and hence it is commonly preferred over other biasing circuits.

Stability factor is mathematically given by the following equation.

𝝏𝑰𝑪 1 
S = =
𝝏𝑰𝑪𝑶 IB
1  
IC

(a) Fixed bias (b) Collector to base bias (c) Self bias

1+ 𝛽 1+ 𝛽
s=1+ β 𝑆= 𝑅𝑐 𝑆= 𝑅𝐸
1+ 𝛽 1+ 𝛽
𝑅𝑏 + 𝑅𝑐 𝑅𝑏 + 𝑅𝐸

Design:

Given VCC = 12V, VBE = 0.65V, VCE = 6V, IC = 1mA, β = 200, S=10

a) Design a fixed bias circuit.

b) Design a collector to base bias circuit.
c) Design a self bias circuit.
Circuit diagram:

(a) Fixed bias (b) Collector to base bias (c) Self bias
a) Design a fixed bias circuit to establish the Q-point at IC = 1mA, VCE = 6V. Use a transistor with β
= 200 and VBE = 0.65V. Given VCC = 12V.
IC 1  10 3
Solution: IB = = = 5µA
 200

Apply KVL to the loop consisting of VCC, Rb and VBE.

-VCC + IB  Rb + VBE = 0

 Rb = 2.27 MΩ

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Apply KVL to the loop consisting of VCC, RC, and VCE.

- VCC + IC  RC + VCE = 0

 RC = 6 KΩ

b) Design a Collector to base bias circuit to establish the Q-point at IC = 1mA, VCE = 6V. Use a
transistor with β = 200 and VBE = 0.65V. Given VCC = 12V.
IC 1  10 3
Solution: IB = = = 5µA
 200

Apply KVL to the loop consisting of VCC, RC, and VCE.

- VCC + (IC + IB)  RC + VCE = 0

 RC = 6 KΩ

Apply KVL to the loop consisting of VCC, Rb and VBE.

-VCC + (IC + IB)  RC + IB  Rb + VBE = 0

 Rb = 1.1 MΩ

c) Design a self bias circuit for which the biasing conditions are as follows.
VCC = 12V, IC = 1mA, VCE = 6V and Stability factor is S = 10. Use RC = 4.7KΩ. Use a
transistor with β = 200 and VBE = 0.65V.

Solution: Use, I C    I B

 I B  5A

Apply KVL to the output loop:

 VCC  I C  RC  VCE  I C  RE  0

 RE  1.3K

Apply Thevenin‟s theorem to the base circuit, then

VCC  R2 R  R2
VB  And RB  1
R1  R2 R1  R2

We know that the stability factor for a self bias circuit is given by,

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1 
S
  RE
1
RB  RE

 RB  12.31K

Apply KVL to the input loop, then

 VB  I B  RB  VBE  I E  RE  0

 VB  2.01 V

Divide RB with VB:

VCC  RB
 R1   73.5K
VB

R1  R2
Also, RB   R2  14.8K
R1  R2

Procedure:

1) Connect the fixed bias circuit as shown in figure (a).

2) Note the DC conditions i.e, the values of VBE, IB and VCE, IC.
3) Heat the transistor by placing a soldering iron in its vicinity for a minute. Note the values of IC
and IB.
4) Calculate the stability factor as mentioned in theory.
5) Repeat the above steps for collector to base bias and self bias circuits.
6) Calculate the stability factors theoretically and compare them with the practical values.

Observations:

IB (µA) IC (mA)
Circuit

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IB1 IB2 IC1 IC2 I B 1  S

S=
I C I (Theoretical)
1   B
I C

Fixed bias
circuit

Collector to
Base bias
circuit
Self bias circuit

Result:

Stability factors are calculated for each circuit. Theoretical and practical values of the stability factors are
verified.

Viva Questions:

1. What should be the value of stability factor (high/Low)?

Ans: The value of the stability factor should be as low as possible.

2. What is the effect of temperature upon reverse saturation current ?

Ans: Reverse saturation current doubles for every 10 deg centigrade rise in temperature.

3. What is thermal run away?

Ans: When the temperature increases, reverse saturation current gets increased which increases
the power dissipation of the transistor resulting in the increase of temperature, This increase in
temperature further increases the reverse saturation current, hence this process is cumulative
resulting in the destruction of transistor.

Experiment No: 8

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Common Emitter BJT Amplifier

Aim:

1. To plot the frequency response of a Common Emitter BJT amplifier.

2. To find the cut off frequencies, Bandwidth and calculate its gain.

Components:

Name Quantity
Transistor BC547 1
Resistor 74K , 15K , 4.7K , 1K , 2.2K , 8.2K 1,1,1,1,1,1
Capacitor 10µF,100µF, 1 KPF 2, 1,1

Equipment:

Name Range Quantity

Bread Board 1
Dual DC power supply 0-30V 1
Function Generator (0-1)MHz 1
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
CRO (0-20)MHz 1
CRO probes, Connecting Wires

Specifications:

For Transistor BC 547:

 Max Collector Current= 0.1A

 Vceo max= 50V
 VEB0 = 6V
 VCB0 = 50V
 Collector power dissipation = 500mW
 Temperature Range = -65 to +150 0C
 hfe = 110 - 220

Theory:

An amplifier is an electronic circuit that can increase the strength of a weak input signal without
distorting its shape. The common emitter configuration is widely used as a basic amplifier as it
has both voltage and current amplification with 1800 phase shift.

The factor by which the input signal gets multiplied after passing through the amplifier circuit is
called the gain of the amplifier. It is given by the ratio of the output and input signals.

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Gain = output signal / input signal

A self bias circuit is used in the amplifier circuit because it provides highest Q-point stability
among all the biasing circuits.

Resistors R1 and R2 forms a voltage divider across the base of the transistor. The function of this
network is to provide necessary bias condition and ensure that emitter-base junction is operating
in the proper region.

In order to operate transistor as an amplifier, the biasing is done in such a way that the operating
point should be in the active region. For an amplifier the Q-point is placed so that the load line is
bisected. Therefore, in practical design it is always set to Vcc/2. This will confirm that the Q-
point always swings within the active region. Output is produced without any clipping or
distortion for the maximum input signal. If not reduce the input signal magnitude.

The Bypass Capacitor: The emitter resistor is required to obtain the DC quiescent stability.
However the inclusion of it in the circuit causes a decrease in amplification. In order to avoid
such a condition, it is bypassed by capacitor so that it acts as a short circuit for AC and
contributes stability for DC quiescent condition. Hence capacitor is connected in parallel with
emitter resistance which increases the A.C gain.

The Coupling capacitor: An amplifier amplifies the given AC signal. In order to have noiseless
transmission of a signal (without DC), it is necessary to block DC i.e. the direct current should
not enter the amplifier or load. This is usually accomplished by inserting a coupling capacitor
between two stages.

Frequency response :

The plot of gain versus frequency is called as frequency response,

The coupling and bypass capacitors causes the gain to fall at low frequency region and internal
parasitic capacitance and shunt capacitor causes the gain to fall at high frequency region.

In the mid frequency range large capacitors are effectively short circuits and the stray capacitors
are open circuits, so that no capacitance appear in the mid frequency range. Hence the mid band
frequency gain is maximum.

Hence we get a Band Pass frequency response

Characteristics of CE Amplifier:

 Large current gain.

 Large voltage gain.
 Large power gain.

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 Current and voltage phase shift of 180°.

 Moderate output resistance.

Type Ai Ri AV RO
CE − 𝑕𝑓𝑒 𝑕𝑖𝑒 𝑅𝑙′ ∞ (40kΩ)
− 𝑕𝑓𝑒
𝑕𝑖𝑒

Design:

d) Design a single stage RC coupled amplifier using a BJT BC 547 in CE configuration to

provide a gain of 100, VCC = 12V, IC = 1mA, VCE = 6V and Stability factor is S = 10. Use
RC = 4.7KΩ. Use a transistor with β = 200, VBE = 0.65V, hfe = 50, hie = 1.5 KΩ.
Solution: Use, I C    I B

 I B  5A

Apply KVL to the output loop:

 VCC  I C  RC  VCE  I C  RE  0

 RE  1.3K

Apply Thevenin‟s theorem to the base circuit, then

VCC  R2 R  R2
VB  And RB  1
R1  R2 R1  R2

We know that the stability factor for a self bias circuit is given by,

1 
S
  RE
1
RB  RE

 RB  12.31K

Apply KVL to the input loop, then

 VB  I B  RB  VBE  I E  RE  0

 VB  2.01 V

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Divide RB with VB:

VCC  RB
 R1   73.5K
VB

R1  R2
Also, RB   R2  14.8K
R1  R2

Design of RL:-

 h fe  RL'
We know that, gain AV 
hie

 RL'  3K

RL  RC
But, RL'   RL  8.3K
RL  RC

Circuit Diagram:

Fig(1) DC bias for the BJT

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Fig(2) RC Coupled CE BJT Amplifier

Procedure:

1. Connect the circuit as shown in fig 1 and obtain the DC bias conditions VBE, IB, VCE, IC.
2. Connect the circuit as shown in fig 2, Set source voltage as 30mV P-P at 1 KHz
frequency using the function generator.
3. Keeping the input voltage as constant, vary the frequency from 30 Hz to 1 MHz in
regular steps and note down the corresponding output P-P voltage.
4. Plot the graph for gain in (dB) verses Frequency on a semi log graph sheet.
5. Calculate the bandwidth from the graph.

Observations:

VS = 30mV

DC conditions:-

VBE = ……………. VCE = ………………

IB = ……………… IC = ………………..

Frequency Vs (Volts) Vo(Volts) Gain = Vo/Vs Gain(dB) = 20 log(Vo/Vs)

Graph:In the usual application, mid band frequency range are defined as those frequencies at
which the response has fallen to 3dB below the maximum gain (|A| max). These are shown as fL,

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fH and are called as the 3dB frequencies or simply the lower and higher cut off frequencies
respectively. The difference between the higher cut off and lower cut off frequency is referred to
as the bandwidth (fH - fL).

Fig(3).Frequency Response Curve of RC coupled BJT CE Amplifier

Calculations from Graph:

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor. This may
lead to damage the transistor.
2. Connect signal generator in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

1. The BJT CE amplifier is studied

2. The frequency response curve of the BJT CE amplifier is plotted.
3. Lower cutoff frequency, fL = …………….
Higher cutoff frequency, fH = ……………

Bandwidth = fH – fL = ……………………

Viva Questions:

1. What is the equation for voltage gain?

Ans:

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𝑅𝑙′
𝐴𝑉 = − 𝑕𝑓𝑒
𝑕𝑖𝑒

2. What is cut off frequency?

Ans: In electronics, cutoff frequency or corner frequency is the frequency either above or below
which the power output of a circuit, such as a line, amplifier, or electronic filter has fallen to a
given proportion of the power in the pass band. Most frequently this proportion is one half the
pass band power, also referred to as the 3 dB point since a fall of 3 dB corresponds
approximately to half power. As a voltage ratio this is a fall to of the pass band voltage

3. What are the applications of CE amplifier?

Ans: Low frequency voltage amplifier, radio frequency circuits and low-noise amplifiers

4. What is active region?

Ans: The active region of a transistor is when the transistor has sufficient base current to turn the
transistor on and for a larger current to flow from emitter to collector. This is the region where
the transistor is on and fully operating. In this region JE in forward bias and JC in reverse bias
and transistor works as an amplifier

5. What is Bandwidth?

Ans: Bandwidth is the difference between the upper and lower frequencies in a continuous set of
frequencies. It is typically measured in hertz, and may sometimes refer to passband bandwidth,
sometimes to baseband bandwidth, depending on context. Passband bandwidth is the difference
between the upper and lower cutoff frequencies of, for example, a bandpass filter, a
communication channel, or a signal spectrum. In case of a low-pass filter or baseband signal, the
bandwidth is equal to its upper cutoff frequency.

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Experiment No: 9

Common Collector BJT Amplifier

Aim:

1. To plot the frequency response of a Common Collector BJT amplifier.

2. To find the cut off frequencies, Bandwidth and calculate its gain.

Components:

Name Quantity
Transistor BC547 1
Resistor 74K , 15K , 4.7K , 1K , 2.2K , 8.2K 1,1,1,1,1,1
Capacitor 10µF, 1 KPF 2,1

Equipment:

Name Range Quantity

Bread Board 1
Dual DC power supply 0-30V 1
Function Generator (0-1)MHz 1
Digital Ammeter, Voltmeter [0-200µA/200mA], [0-20V] 1
CRO (0-20)MHz 1
CRO probes, Connecting Wires

Specifications:

For Transistor BC 547:

 Max Collector Current= 0.1A

 Vceo max= 50V
 VEB0 = 6V
 VCB0 = 50V
 Collector power dissipation = 500mW
 Temperature Range = -65 to +150 0C
 hfe = 110 - 220

Theory:

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The common collector configuration is used for Impedance matching purpose to deliver
maximum power to the load. It is also called as Emitter Follower because it has Unity Voltage
Gain. ( 𝐴𝑉 ≈ 1 )

In order to operate transistor as an amplifier, the biasing is done in such a way that the operating
point should be in the active region. For an amplifier the Q-point is placed so that the load line is
bisected. Therefore, in practical design is always set to Vcc/2. This will confirm that the Q-point
always swings within the active region. Output is produced without any clipping or distortion for
the maximum input signal. If not reduce the input signal magnitude.

The Coupling capacitor: An amplifier amplifies the given AC signal. In order to have noiseless
transmission of a signal (without DC), it is necessary to block DC i.e. the direct current should
not enter the amplifier or load. This is usually accomplished by inserting a coupling capacitor
between two stages.

Frequency response :

The plot of gain versus frequency is called as frequency response,

The coupling and bypass capacitors causes the gain to fall at low frequency region and internal
parasitic capacitance and shunt capacitor causes the gain to fall at high frequency region.

In the mid frequency range large capacitors are effectively short circuits and the stray capacitors
are open circuits, so that no capacitance appear in the mid frequency range. Hence the mid band
frequency gain is maximum.

Hence we get a Band Pass frequency response

Characteristics of CC Amplifier:

 Large current gain.

 Unity voltage gain.
 Moderate power gain.
 Current and voltage phase shift of 0°.
 High input resistance and Low output resistance.

Type Ai Ri AV RO
CC 1 + 𝑕𝑓𝑒 𝑕𝑖𝑒 + 1 + 𝑕𝑓𝑒 𝑅𝐸′ 1 𝑅𝑠′+ 𝑕𝑖𝑒
(1 + 𝑕𝑓𝑒 )

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Circuit Diagram:

Fig(1) DC bias for the BJT

Fig(2).RC Coupled CC BJT Amplifier

Procedure:

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1. Connect the circuit as shown in fig 1 and obtain the DC bias conditions VBE, IB, VCE, IC.
2. Connect the circuit as shown in fig 2, Set source voltage as 1V P-P at 1 KHz frequency
using the function generator.
3. Keeping the input voltage as constant, vary the frequency from 30 Hz to 1 MHz in
regular steps and note down the corresponding output P-P voltage.
4. Plot the graph for gain verses Frequency on a semi log graph sheet.
5. Calculate the bandwidth from the graph.

Observations:

VS = 1V

DC conditions:-

VBE = ……………. VCE = ………………

IB = ……………… IC = ………………..

Frequency Vs (Volts) Vo(Volts) Gain = Vo/Vs

Graph:

In the usual application, mid band frequency range are defined as those frequencies at which the
1
response has fallen to 2 of the maximum gain (|A| max). These are shown as fL and fH and are
called as the 3dB frequencies or simply the lower and higher cut off frequencies respectively.
The difference between higher cut off and lower cut off frequency is referred to as bandwidth (fH
- fL).

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Fig(3).Frequency Response Curve of RC coupled BJT CC Amplifier

Calculations from Graph:

Precautions:

1. While performing the experiment do not exceed the ratings of the transistor. This may
lead to damage the transistor.
2. Connect signal generator in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Result:

1. The BJT CC amplifier is studied

2. The frequency response curve of the BJT CC amplifier is plotted.
3. Lower cutoff frequency, fL = …………….
Higher cutoff frequency, fH = ……………

Bandwidth = fH – fL = ……………………

Viva Questions:

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1. What is the equation for voltage gain for a CC amplifier?

Ans: 𝐴𝑉 = 1

2. What is cut off frequency?

Ans: In electronics, cutoff frequency or corner frequency is the frequency either above or below
which the power output of a circuit, such as a line, amplifier, or electronic filter has fallen to a
given proportion of the power in the pass band. Most frequently this proportion is one half the
pass band power, also referred to as the 3 dB point since a fall of 3 dB corresponds
1
approximately to half power. As a voltage ratio this is a fall to 2 of the pass band voltage

3. What are the applications of CC amplifier?

Ans: It is used as a Buffer for impedance matching purpose and to transfer maximum power to
the load

4. What is active region?

Ans: The active region of a transistor is when the transistor has sufficient base current to turn the
transistor on and for a larger current to flow from emitter to collector. This is the region where
the transistor is on and fully operating. In this region JE in forward bias and JC in reverse bias
and transistor works as an amplifier

5. What is Bandwidth?

Ans: Bandwidth is the difference between the upper and lower frequencies in a continuous set of
frequencies. It is typically measured in hertz, and may sometimes refer to passband bandwidth,
sometimes to baseband bandwidth, depending on context. Passband bandwidth is the difference
between the upper and lower cutoff frequencies of, for example, a bandpass filter, a
communication channel, or a signal spectrum. In case of a low-pass filter or baseband signal, the
bandwidth is equal to its upper cutoff frequency.

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Experiment No:10

Characteristics of a JFET in Common source Configuration

Aim:

1.To study Drain Characteristics and Transfer Characteristics of a Junction Field Effect
Transistor (JFET).

2.To measure drain resistance, transconductance and amplification factor.

Components:

Name Quantity
JFET BFW 11 1
Resistor 1M 1

Equipment:

Name Range Quantity

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Bread Board 1
Regulated power supply 0-30V 1
Digital Ammeter 0-200mA 1
Digital Voltmeter 0-20V 2
Connecting Wires

Specifications:

For FET BFW11:

Gate Source Voltage VGS = -30V

Forward Gain Current IGF = 10mA

Maximum Power Dissipation PD = 300mW

Pin assignment of FET:

Circuit Diagram:

Fig(1).Characteristics of FET

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Theory:

A JFET is called as Junction Field effect transistor.

It is called a unipolar device because the flow of current through it is due to one type of carriers
i.e., majority carriers where as a BJT is a Bi - Polar device, It has 3 terminals Gate, Source and
Drain. A JFET can be used in any of the three configurations viz, Common Source, Common
Gate and Common Drain.

The input gate to source junction should always be operated in reverse bias, hence input
resistance Ri = ∞, IG ≈ 0.

Pinch off voltage VP is defined as the gate to source reverse bias voltage at which the output
drain current becomes zero.

In CS configuration Gate is used as input node and Drain as the output node. A JFET in CS
configuration is used widely as an amplifier. A JFET amplifier is preferred over a BJT amplifier
when the demand is for smaller gain, high input resistance and low output resistance. Any FET
operation is governed by the following equation.

The drain current equation and trans conductance is given as

𝑉𝐺𝑆 2 𝜕𝐼𝐷 2
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1 − , 𝑔𝑚 = = 𝐼𝐷 𝐼𝐷𝑆𝑆
𝑉𝑃 𝜕𝑉𝐺𝑆 𝑣𝑝

Where 𝐼𝐷𝑆𝑆 is called as Drain to Source Saturation current

Vp is called as the Pinch off voltage

The basic circuit diagram for studying drain and transfer characteristics is shown in the circuit
diagram.

1. Transfer characteristics are obtained between the gate to source voltage (VGS) and drain
current (ID) taking drain to source voltage ( VDS) as the parameter.
2. Drain characteristics are obtained between the drain to source voltage (VDS) and drain
current (ID) taking gate to source voltage (VGS) as the parameter.

Procedure:

Transfer Characteristics:

1) Connect the circuit as shown. All the knobs of the power supply must be at the minimum
position before the supply is switched on.
2) Adjust the output voltage VDS to 4V by adjusting the supply VDD.

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3) Vary the supply voltage VGG so that the voltage VGS varies in steps of -0.25 V from 0 V
onwards. In each step note the drain current ID. This should be continued till ID becomes
zero.
4) Repeat above step for VDS = 8 V.
5) Plot a graph between the input voltage VGS and output current ID for output voltage VDS
in the second quadrant. This curve is called the transfer characteristics.

Drain Characteristics:

1) Connect the circuit as shown in figure. Adjust all the knobs of the power supply to their
minimum positions before switching the supply on.
2) Adjust the input voltage VGS to 0 V by adjusting the supply VGG.
3) Vary the supply voltage VDD so that VDS varies in steps of 0.5 V from 0 to 4 V and then
in steps of 1 V from 4 to 10 V. In each step note the value of drain current ID.
4) Adjust VGS to -1 and -2 V and repeat step-3 for each value of VGS.
5) Plot a graph between VDS and ID for different values of VGS. These curves are called drain
characteristics.
6) Mark the various regions in the drain characteristics graph and calculate the drain
resistance.

Observations:

Transfer Characteristics
VDS = 4V VDS = 8V
VGS(V) ID(mA) VGS(V) ID(mA)

Drain Characteristics
VGS = 0V VGS = -1V VGS = -2V
VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

Graph:

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Transfer Characteristics Drain Characteristics

1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at a constant VGS.
2. Plot the transfer characteristics by taking VGS on X-axis and taking ID on Y-axis at
constant VDS.

Calculations from Graph:

1. Drain Resistance (rd): It is given by the relation of small change in drain to source
voltage( VDS) to the corresponding change in Drain Current( ID) for a constant gate to
source voltage ( VGS), when the JFET is operating in pinch-off region.
2. Trans Conductance (gm): Ratio of small change in drain current( ID) to the
corresponding change in gate to source voltage ( VGS) for a constant VDS.

gm at constant VDS (from transfer characteristics).

The value of gm is expressed in mho‟s ( ) or Siemens (s).

3. Amplification factor (µ): It is given by the ratio of small change in drain to source
voltage ( VDS) to the corresponding change in gate to source voltage ( VGS) for a
constant drain current (ID).

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Inference:

1. As the gate to source voltage (VGS) is increased above zero, pinch off voltage is increased
at a smaller value of drain current as compared to that when VGS = 0V.
2. The value of drain to source voltage (VDS) is decreased as compared to that when VGS =
0V.

Precautions:

1. While performing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the transistor.

Result:

1. Drain Characteristics and Transfer Characteristics of a Field Effect Transistor are studied (FET).

2. Measured drain resistance, transconductance and amplification factor.

Viva Questions:

1. Why FET is called a Unipolar device?

Ans: FETs are unipolar transistors as they involve single-carrier-type operation.

2. What are the advantages of FET?

Ans: The main advantage of the FET is its high input resistance, on the order of 100 MΩ or
more. Thus, it is a voltage-controlled device, and shows a high degree of isolation between input
and output. It is a unipolar device, depending only upon majority current flow. It is less noisy.
and is thus found in FM tuners and in low-noise amplifiers for VHF and satellite receivers. It is
relatively immune to radiation. It exhibits no offset voltage at zero drain current and hence
makes an excellent signal chopper. It typically has better thermal stability than a bipolar junction
transistor (BJT)

3. What is transconductance?

Ans: Trasconductance is an expression of the performance of a bipolar transistor or field-effect

transistor (FET). In general, the larger the transconductance figure for a device, the greater the
gain(amplification) it is capable of delivering, when all other factors are held constant. The

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symbol for transconductance is gm. The unit is siemens, the same unit that is used for direct-
current (DC) conductance.

4. What are the disadvantages of FET?

Ans: It has a relatively low gain-bandwidth product compared to a BJT. The MOSFET has a
drawback of being very susceptible to overload voltages, thus requiring special handling during
installation.The fragile insulating layer of the MOSFET between the gate and channel makes it
vulnerable to electrostatic damage during handling. This is not usually a problem after the device
has been installed in a properly designed circuit.

5. Relation between µ, gm and rd?

Ans: µ = gm * rd

Experiment No: 11

Common Source JFET Amplifier

Aim:

1. To plot the frequency response of a JFET common source amplifier .

2. To find the cut off frequencies, Bandwidth and calculate its gain.

Components:

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Name Quantity
JFET BFW 11 1
Resistor 4.7K , 27K , 1K , 1M 1, 1, 1, 1
Capacitor 1µF, 10µF, 1KPF 2,1,1

Equipment:

Name Range Quantity

Bread Board 1
Dual power supply 0-30V 1
CRO (0-20)MHz 1
Function Generator (0-1)MHz 1
Connecting Wires

Specifications:

For FET BFW11:

Gate Source Voltage VGS = -30V

Forward Gain Current IGF = 10mA

Maximum Power Dissipation PD = 300mW

Theory:

An amplifier is an electronic circuit that can increase the strength of a weak input signal without
distorting its shape. This amplifier is commonly used in buffering applications where the demand
is for higher input impedance and gain is not of prime importance.

Of the possible three configurations of JFET amplifiers, common source (CS) configuration is
mostly used. The advantage of using CS configuration is that it has very high input impedance.

Circuit diagram shows the FET amplifier of common source configuration. The biasing input and
couplings are shown in the figure. The mid range voltage gain of the amplifier is given by

A = gm (rd || R‟L)

A JFET can be used as an amplifier in the Active region. The factor by which the input signal
gets multiplied after passing through the amplifier circuit is called the gain of the amplifier. It is
given by the ratio of the output and input signals.

Gain = output signal / input signal

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A source self bias circuit is used in the amplifier circuit. A plot of the gain of the amplifier and
frequency is called the frequency response curve. The frequencies at which the gain of the
amplifier is 1/√2 times the maximum value of gain are called the cutoff frequencies or 3 dB
frequencies. The difference of these cutoff frequencies is called the bandwidth of the amplifier.

Bandwidth = fH - fL

Where fL is called the lower cutoff frequency and fH is called the higher cutoff frequency.

Design:

Design a single stage JFET amplifier to provide a voltage gain of 10, Use JFET BFW11 for
which IDSS = 13mA, VP = - 4V, gm = 3mS, and rd = 20KΩ. The biasing conditions are as
follows.VDD = 25V, VDS = 10V, ID = 2.5mA.
2
 V 
Sol) Using I D  I DSS  1  GS 
 VP 

 ID 
 VGS  VP  1    2.25V

 I DSS 

Assume that Rg = 1MΩ

Apply KVL to input loop:

 I G  Rg  VGS  I D  RS  0

But IG = 0.

 VGS
 RS   0.9 K  1K
ID

Apply KVL to the output loop:

 VDD  I D  RD  VDS  I D  RS  0

 RD  5K  4.7 K

We know that the voltage gain of a FET amplifier is given by,

 r  RL' 
AV   g m  d   RL  27 K
' 
 d
r  R L 

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Circuit Diagram:

Fig(1)- DC bias of CS JFET

Fig(2)- RC Coupled CS JFET Amplifier

Procedure:

1) Connect the circuit as shown in figure(1) and measure the DC parameters VGS, VDS, ID.
2) Connect the circuit as shown in figure(2), Adjust the input signal frequency to 1 KHz and
the peak to peak value of Vi to 50mV. Note the peak to peak value of output voltage Vo
and calculate the gain. The output signal should be a replica of the input signal, but with a
phase shift of 180˚. (If the output signal is distorted then Vi should be reduced.)

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3) Vary the frequency of the input signal from 30 Hz to 500 KHz in appropriate steps,
maintain the Vi constant at 50mV and note the output voltage in each step.
4) Calculate the gain of the amplifier for each value of frequency. Plot a graph between gain
and frequency on a semi log graph sheet. This graph is called the frequency response
curve of the amplifier.
5) Calculate bandwidth of the amplifier from the graph as mentioned in theory.
6) Calculate all the parameters at mid band frequencies (i.e. at 1 KHz).
7) To calculate voltage gain

Gain AVS = Output Voltage (VO) / Source Voltage (VS)

Observations:

DC conditions:-

VGS = ……………. VDS = ………………

ID = ………………

VS = 50mV

Frequency Vs (volts) Vo(volts) Gain= Vo/Vs Gain(dB)=20 log(Vo/Vs)

Graph:

In the usual application, mid band frequency range are defined as those frequencies at which the
response has fallen to 3dB below the maximum gain (|A| max). These are shown as fL and fH and
are called as the 3dB frequencies are simply the lower and higher cut off frequencies
respectively. The difference between higher cut off and lower cut off frequency is referred to as
bandwidth (fH - fL).

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Fig(3)-.Frequency Response Curve of RC coupled CS JFET Amplifier

Precautions:

5. While performing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
6. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
7. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
8. Make sure while selecting the Source, Drain and Gate terminals of the transistor

Result:

4. The JFET CS amplifier is studied

5. The frequency response curve of the JFET CS amplifier is plotted.
6. The cut off frequencies and Bandwidth is found
Lower cutoff frequency, fL = …………….
Higher cutoff frequency, fH = ……………

Bandwidth = fH – fL = ……………………

Viva Questions:

1. Why FET is called as unipolar device?

Ans: FETs are unipolar transistors as they involve single-carrier-type operation.

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2. Why the common-source (CS) amplifier may be viewed as a transconductance amplifier

or as a voltage amplifier?

Ans: As a transconductance amplifier, the input voltage is seen as modulating the current going
to the load. As a voltage amplifier, input voltage modulates the amount of current flowing
through the FET, changing the voltage across the output resistance according to Ohm's law.
However, the FET device's output resistance typically is not high enough for a reasonable
transconductance amplifier (ideally infinite), nor low enough for a decent voltage amplifier
(ideally zero).

3. What are the characteristics of JFET source amplifier?

Ans: At low frequencies and using a simplified hybrid-pi model, the following small-
signal characteristics can be derived.

Definition Expression
Current Gain

Input Impedance

Voltage gain -- gm (rd || R‟L)

Output Impedance

4. What is the impedance of FET?

Ans:

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Experiment No:12

UJT Characteristics and Silicon-Controlled Rectifier (SCR) Characteristics

Aim: i. To study the static characteristics of a given UJT (2N2646)

ii. Identify the negative resistance region and estimate the resistance of the
device.
iii. To draw the V-I Characteristics of Silicon controlled rectifier.
Components:
Name Quantity
UJT 2N 2646 1
Resistor 1 K? 2
SCR (TYN616) 1
Resistors 10kΩ, 1kΩ 1

Equipment:

Name Range Quantity

Bread Board 1
Dual power supply 0-30V 1
Digital Ammeter (0-200)mA 1
Digital Voltmeter (0-20)V 1
Connecting Wires

Specifications:

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UJT 2N- 2646: SCR TYN616

Peak emitter current (Ip) = 2A IGT= 25mA

Continuous emitter current (IE) = VGT = 1.3 V

50mA
IH = 40 mA
Inter Base Voltage (VBB) = 35V IL = 60 mA
dV/dt = 500 V/μs
Emitter Base Reverse Voltage
(VEB2) = -30V

Power dissipation at 25° C= 300mW

Circuit Diagram of UJT:

Figure 1: Circuit Diagram of Unijunction transistor characteristics

Pin assignment of UJT:

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Theory: The UJT- junction is a 3-terminal solid-state device (emitter and the two bases). The
simplified equivalent circuit is shown below:

Figure2 :UJT structure and symbol

The device has only one PN junction and hence it is known as UNI-JUNCTION transistor. The
PN junction is formed between the emitter and the base regions. The emitter region is heavily
doped. The PN emitter to base junction is shown as diode D1, The emitter region is closer to
base (B1) terminal than base (B2). The inter base resistance of the N-type Si bar appears as two
resistors The operational difference between FET and UJT is that FET is normally operated
with gate junction reverse biased, whereas useful behavior of UJT occurs when the emitter is
forward biased.

The emitter conductivity characteristics are such that as current increases the emitter to
base (B1) voltage decreases. At peak point and valley point, the slope of the emitter
characteristics is 0. This is the negative resistance region of UJT between these two points.
Beyond the valley point an increase in current is accomplished by an increase in voltage. This
region is known as the saturation region.

Procedure:

1. Connect the circuit as shown in the figure 1

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2. Ensure that the power supply is switched OFF. Keep the voltage control knob in the
minimum position and current control knob in maximum position.
3. Switch ON the power supply Keep VBB at 5volts. Now vary VEB1 by varying VEE. Note
down IE once UJT is ON, Increase the emitter current IE in small steps of 5mA and note
down the corresponding VEB1 value up to a maximum of 50mA.
4. Repeat above steps for V BB = 8V . Plot graph of IE versus V EB1 for different values of
VBB .
5. Calculate resistance of the UJT in the negative resistance region using the formula
∆𝑉𝐸𝐵 1
𝑟 − = at VBB= Constant
∆𝐼𝐸

Observations:

VBB = 5V VBB = 8V
IE(mA) VEB1(V) IE(mA) VEB1(V)

Expected graph:

Plot the tabulated readings on a graph sheet.

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Figure 3: Characteristics of UJT

Inference:

1. There is a negative resistance region from peak point to valley point.

Precautions:

1. While performing the experiment do not exceed the ratings of the UJT. This may lead to
damage of the UJT.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base-1, base-2 terminals of UJT.

Result:

The emitter characteristics of UJT have been determined.

Viva questions:

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1. Write the features of UJT.

Ans: The device has only one junction, so it is called the uni-junction device. The device,
because of one P-N junction, is quite similar to a diode but it differs from an ordinary diode as it
has three terminals.

In a uni-junction transistor the emitter is heavily doped while the N-region is lightly doped, so
the resistance between the base terminals is relatively high, typically 4 to 10 kilo Ohm when the
emitter is open. The N-type silicon bar has a high resistance and the resistance between emitter
and base-1 is larger than that between emitter and base-2. It is because emitter is closer to base-2
than base-1.UJT is operated with emitter junction forward- biased while the JFET is normally
operated with the gate junction reverse-biased.UJT does not have ability to amplify but it has the
ability to control a large ac power with a small signal. It exhibits a negative resistance
characteristic and so it can be employed as an oscillator.

2. What is the difference between UJT and FET?

Ans: The structure of a UJT is quite similar to that of an N-channel JFET. The main difference is
that P-type (gate) material surrounds the N-type (channel) material in case of JFET and the gate
surface of the JFET is much larger than emitter junction of UJT.

3. What is a UJT?

Ans: It is Uni-junction transistor, it has only one junction between emitter and n-slab.

4. What is relaxation oscillator?

Ans: A relaxation oscillator is an oscillator based upon the behavior of a physical system's return
to equilibrium after being disturbed. That is, a dynamical system within the oscillator
continuously dissipates its internal energy. Normally the system would return to its natural
equilibrium; however, each time the system reaches some threshold sufficiently close to its
equilibrium, a mechanism disturbs it with additional energy. Hence, the oscillator's behavior is
characterized by long periods of dissipation followed by short impulses. The period of the
oscillations is set by the time it takes for the system to relax from each disturbed state to the
threshold that triggers the next disturbance.

5. Application of UJT?

Ans: Relaxation oscillator, Saw tooth wave form generator

Circuit Diagram of SCR:

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Figure 2: Circuit Diagram of SCR characteristics

Theory:

It is a four layer semiconductor device being alternate of P-type and N-type silicon. It consists
os 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in reverse
direction and three terminals called anode A, cathode K , and a gate G. The operation of SCR
can be studied when the gate is open and when the gate is positive with respect to cathode.

Figure3 :SCR structure and symbol

When gate is open, no voltage is applied at the gate due to reverse bias of the junction J2 no
current flows through R2 and hence SCR is at cutt off. When anode voltage is increased J2 tends
to breakdown.

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When the gate positive, with respect to cathode J3 junction is forward biased and J2 is reverse
biased .Electrons from N-type material move across junction J3 towards gate while holes from
P-type material moves across junction J3 towards cathode. So gate current starts flowing ,anode
current increase is in extremely small current junction J2 break down and SCR conducts
heavily.

When gate is open thee break over voltage is determined on the minimum forward voltage at
which SCR conducts heavily. Now most of the supply voltage appears across the load resistance.
The holding current is the maximum anode current gate being open , when break over occurs.

Procedure:

1. Connections are made as per figure 2.

2. Keep the gate supply voltage at some constant value
3. Vary the anode to cathode supply voltage and note down the readings of voltmeter
and ammeter. Keep the gate voltage at standard value.
4. A graph is drawn between VAK and IAK.

Observation:

VAK(V) IAK ( µA)

Model Wave form:

Figure4 : SCR characteristics

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Result: SCR Characteristics are observed.

Viva questions:

1. What is an SCR?

Ans: Silicon-controlled rectifier (or semiconductor-controlled rectifier) is a four-layer solid state

current controlling device. The name "silicon controlled rectifier" or SCR is General Electric's
trade name for a type of thyristor

2. What is the difference between SCR and TRIAC?

Ans: SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed
to TRIACs which are bidirectional (i.e. current can flow through them in either direction). SCRs
can be triggered normally only by currents going into the gate as opposed to TRIACs which can
be triggered normally by either a positive or a negative current applied to its gate electrode.

3. What are the applications of SCR?

Ans: SCRs are mainly used in devices where the control of high power, possibly coupled with
high voltage, is demanded. Their operation makes them suitable for use in medium to high-
voltage AC power control applications, such as lamp dimming, regulators and motor control.

SCRs and similar devices are used for rectification of high power AC in high-voltage direct
current power transmission. They are also used in the control of welding machines, mainly
MTAW and GTAW processes.

4. Why is Peak Reverse Voltage Important?

Ans: When an SCR is used for rectification, during the negative half cycle of given ac supply,
reverse voltage is applied across the SCR. If Peak Reverse Voltage is exceeded, there may be an
avalanche breakdown and the SCR will be damaged (unless the external circuit limits the
current).Commercial SCRs have a PRV up to 2.5kV.

5. What is asymmetrical SCR?

Ans: SCR incapable of blocking reverse voltage are known as asymmetrical SCR, abbreviated
ASCR. They typically have a reverse breakdown rating in the 10's of volts. ASCR are used
where either a reverse conducting diode is applied in parallel (for example, in voltage source
inverters) or where reverse voltage would never occur (for example, in switching power supplies
or DC traction choppers).

Asymmetrical SCR can be fabricated with a reverse conducting diode in the same package.
These are known as RCT, for reverse conducting thyristor.

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APPENDIX
LABORATORY COURSE ASSESSMENT GUIDELINES

i. The number of experiments in each laboratory course shall be as per the curriculum in the
scheme of instructions provided by OU. Mostly the number of experiments is 10 in each
laboratory course under semester scheme and 18 under year wise scheme.
ii. The students will maintain a separate note book for observations in each laboratory
course.
iii. In each session the students will conduct the allotted experiment and enter the data in the
observation table.
iv. The students will then complete the calculations and obtain the results. The course
coordinator will certify the result in the same session.
v. The students will submit the record in the next class. The evaluation will be continuous
and not cycle-wise or at semester end.
vi. The internal marks of 25 are awarded in the following manner:
a. Laboratory record - Maximum Marks 15
b. Test and Viva Voce - Maximum Marks 10
vii. Laboratory Record: Each experimental record is evaluated for a score of 50. The rubric
parameters are as follows:
a. Write up format - Maximum Score 15
b. Experimentation Observations & Calculations - Maximum Score 20
c. Results and Graphs - Maximum Score 10
d. Discussion of results - Maximum Score 5
While (a), (c) and (d) are assessed at the time of record submission, (b) is assessed during the
session based on the observations and calculations. Hence if a student is absent for an experiment
but completes it in another session and subsequently submits the record, it shall be evaluated for
a score of 30 and not 50.
viii. The experiment evaluation rubric is therefore as follows:

Parameter Max Score Outstanding Accomplished Developing Beginner Points

Observations
and 20
Calculations
Write up
format 15
Results and
graphs 10
Discussion of
Results 5

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LABORATORY EXPERIMENT EVALUATION RUBRIC

OUTSTANDING ACCOMPLISHED DEVELOPING BEGINNER
CATEGORY
(Up to 100%) (Up to 75%) (Up to 50%) (Up to 25%)
Write up Aim, Apparatus, The write up follows The report follows The write up
format material requirement, the specified format the specified format does not follow
theoretical basis, but a couple of the but a few of the the specified
procedure of specified parameters formats are missing format and the
experiment, sketch of are missing. and the experimental presentation is
the experimental sketch is not shabby.
setup etc. is included in the
demarcated and report
presented in clearly
labeled and neatly
organized sections.
Observations The experimental The experimental The experimental The experimental
and observations and observations and observations and observations and
Calculations calculations are calculations are calculations are results are
recorded in neatly recorded in neatly recorded neatly but recorded
prepared table with prepared table with correct units and carelessly.
correct units and correct units and significant figures Correct units
significant figures. significant figures are not used. Sample significant
One sample but sample calculation is also figures are not
calculation is calculation is not not shown followed and
explained by shown sample
substitution of values calculations not
shown
Results and Results obtained are Results obtained are Results obtained are Results obtained
Graphs correct within correct within correct within are not correct
reasonable limits. reasonable limits. reasonable limits. within reasonable
Graphs are drawn Graphs are drawn Graphs are not limits. Graphs
neatly with labeling neatly with labeling drawn neatly and or are not drawn
of the axes. Relevant of the axes. Relevant labeling is not neatly and or
calculations are calculations from the proper. No labeling is not
performed from the graphs are calculations are proper. No
graphs. Equations are incomplete and done from the calculations are
obtained by equations are not graphs and done from the
regression analysis or obtained by equations are not graphs and
curve fitting if regression analysis or obtained by equations are not
relevant curve fitting regression analysis obtained by
or curve fitting regression
analysis or curve
fitting

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Discussion of All relevant points of Results are discussed Discussion of results Neither relevant
results the result are but no theoretical is incomplete and points of the
discussed and reference is divergent results are results are
justified in light of mentioned. Divergent not identified. discussed nor
theoretical results are identified divergent results
expectations. but no satisfactory identified
Reasons for divergent reasoning is given for
results are identified the same.
and corrective
measures discussed.
ix. The first page of the record will contain the following title sheet:

SAMPLE ASSESSMENT SHEET

NAME: ROLL NO.

Date Observations Results and Discussion

Exp. Date Submitted Write up Total Score
&Calculations Graphs of Results
No. conducted (Max 15) (Max 50)
(Max 20) (Max 10) (Max 5)

10

11

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12

x. The 15 marks of laboratory record will be scaled down from the TOTAL of the
assessment sheet.
xi. The test and viva voce will be scored for 10 marks as follows:
Internal Test - 6 marks
Viva Voce / Quiz - 4 marks
xii. Each laboratory course shall have 5 course outcomes.

The proposed course outcomes are as follows:

On successful completion of the course, the student will acquire the ability to:

1. Conduct experiments, take measurements and analyze the data through hands-on
experience in order to demonstrate understanding of the theoretical concepts of
_______________________, while working in small groups.

2. Demonstrate writing skills through clear laboratory reports.

3. Employ graphics packages for drawing of graphs and use computational software for
statistical analysis of data.

4. Compare the experimental results with those introduced in lecture, draw relevant
conclusions and substantiate them satisfactorily.

5. Transfer group experience to individual performance of experiments and demonstrate

effective oral communication skills.

xiii. The Course coordinators would prepare the assessment matrix in accordance with the
guidelines provided above for the five course outcomes. The scores to be entered against
each of the course outcome would be the sum of the following as obtained from the
assessment sheet in the record:

a. Course Outcome 1: Sum of the scores under „Observations and Calculations‟.

b. Course Outcome 2: Sum of the scores under „Write up‟.
c. Course Outcome 3: Sum of the scores under „Results and Graphs‟.
d. Course Outcome 4: Sum of the scores under „Discussion of Results‟.
e. Course Outcome 5: Marks for „Internal Test and Viva voce‟.

xiv. Soft copy of the assessment matrix would be provided to the course coordinators.

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MUFFAKHAM JAH COLLEGE OF ENGINEERING AND TECHNOLOGY

Program Outcomes of B.E (ECE) Program:
PO1: Engineering knowledge: Apply the knowledge of mathematics, science, engineering fundamentals, and an
engineering specialization to the solution of complex engineering problems.

PO2: Problem analysis: Identify, formulate, research literature, and analyse complex engineering problems reaching
substantiated conclusions using first principles of mathematics, natural sciences, and engineering sciences

PO3: Design/development of solutions: Design solutions for complex engineering problems and design system
components or processes that meet the specified needs with appropriate consideration for the public health and
safety, and the cultural, societal, and environmental considerations.

PO4: Conduct investigations of complex problems: Use research-based knowledge and research methods including
design of experiments, analysis and interpretation of data, and synthesis of the information to provide valid
conclusions.

PO5: Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern engineering and
IT tools including prediction and modeling to complex engineering activities with an understanding of the
limitations.

PO6: The engineer and society: Apply reasoning informed by the contextual knowledge to assess societal, health,
safety, legal, and cultural issues and the consequent responsibilities relevant to the professional engineering practice.

PO7: Environment and sustainability: Understand the impact of the professional engineering solutions in societal
and environmental contexts, and demonstrate the knowledge of, and need for sustainable development.

PO8: Ethics: Apply ethical principles and commit to professional ethics and responsibilities and norms of the
engineering practice.

PO9: Individual and team work: Function effectively as an individual, and as a member or leader in diverse teams,
and in multidisciplinary settings.

PO10: Communication: Communicate effectively on complex engineering activities with the engineering
community and with society at large, such as, being able to comprehend and write effective reports and design
documentation, make effective presentations, and give and receive clear instructions.

PO11: Project management and finance: Demonstrate knowledge and understanding of the engineering and
management principles and apply these to one‟s own work, as a member and leader in a team, to manage projects
and in multidisciplinary environments.

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PO 12: Life-long learning: Recognise the need for, and have the preparation and ability to engage in independent
and life-long learning in the broadest context of technological change.

Program Specific Outcomes (PSOs) of ECE Department, MJCET

PSO1: The ECE Graduates will acquire state of art analysis and design skills in the areas of digital and analog VLSI
Design using modern CAD tools.

PSO2: The ECE Graduates will develop preliminary skills and capabilities necessary for embedded system design
and demonstrate understanding of its societal impact.

PSO3: The ECE Graduates will obtain the knowledge of the working principles of modern communication systems
and be able to develop simulation models of components of a communication system.

PSO4: The ECE Graduates will develop soft skills, aptitude and programming skills to be employable in IT sector.

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