In Situ Growth of Graphene On Both Sides of A Cu-Ni Alloy Electrode For Perovskite Solar Cells With Improved Stability
In Situ Growth of Graphene On Both Sides of A Cu-Ni Alloy Electrode For Perovskite Solar Cells With Improved Stability
https://doi.org/10.1038/s41560-022-01038-1
The instability of rear electrodes undermines the long-term operational durability of efficient perovskite solar cells. Here,
a composite electrode of copper–nickel (Cu–Ni) alloy stabilized by in situ grown bifacial graphene is designed. The alloying
makes the work function of Cu suitable for regular perovskite solar cells. Cu–Ni is the ideal substrate for preparing high-quality
graphene via chemical vapour deposition, which simultaneously protects the device from oxygen, water and reactions between
internal components. To rivet the composite electrode with the semi-device, a thermoplastic copolymer is applied as an
adhesive layer through hot pressing. The resulting devices achieve power conversion efficiencies of 24.34% and 20.76%
(certified 20.86%) with aperture areas of 0.09 and 1.02 cm2, respectively. The devices show improved stability: 97% of their
initial efficiency is retained after 1,440 hours of a damp-heat test at 85 °C with a relative humidity of 85%; 95% of their initial
efficiency is retained after 5,000 hours at maximum power point tracking under continuous 1 sun illumination.
M
            etal halide perovskite solar cells (PSCs) have attracted         or polymers is hard21; thus, increased intrinsic chemical stability of
            great attention in both academia and industry owing to           rear electrodes for PSCs is needed.
            their excellent optoelectronic performance and low man-              Copper (Cu) is a potential candidate due to its relative inertness
ufacturing costs1–6. However, for PSCs to realize commercializa-             to migrated perovskite components, and it has been widely used in
tion, they must survive the long-term natural erosion imposed by             inverted PSCs22. However, its work function (WF) of 4.65 eV limits its
oxygen, moisture, light and heat7,8. Thanks to the optimization of           application in efficient regular PSCs, which usually use 2,2′,7,7′-tet
the perovskite materials, charge transport materials and interface           rakis(N,N-dip-methoxyphenylamine)-9,9′-spirobifluorene
layers9–12, the operational stability of PSCs has made great progress;       (spiro-MeOTAD) or poly(bis(4-phenyl)(2,4,6-trimethylphenyl)
but one of the key functional layers, the rear electrode, is still prone     amine) (PTAA) with a highest occupied molecular orbital (HOMO)
to fail, which limits the overall durability of efficient PSCs13,14.         of around −5.2 eV (ref. 23). In addition, Cu can be oxidized by oxy-
    Silver (Ag) and aluminium (Al) are commonly used rear elec-              gen and moisture to generate products such as Cu2(OH)2CO3, and
trodes; however, they tend to react with migrated halide anions              Cu atoms were reported to diffuse into perovskite at 85 °C (ref. 24). In
from perovskite to form resistive compounds such as AgI and                  addition to metal electrodes, intrinsically stable carbon electrodes
AlI3 (refs. 15–17). In the case of gold (Au), although the formation         have also been applied to PSCs; 9,000 hours of operational stability
enthalpy of Au–I is much higher than those of Ag–I or Al–I, Au               at the maximum power point (MPP) and 55 °C was recently reported
atoms can diffuse into the perovskite to form antisite defects of AuPb       with no obvious change in the power conversion efficiency (PCE)25.
with deep level, which act as efficient non-radiative recombination          However, big challenges exist for carbon electrodes to obtain high
centres18. In addition, the use of noble metals comes at a high price        efficiencies because of the severe potential losses26. Therefore, it is
and implies more stringent requirements for vacuum and tem-                  still an open issue to develop a low-cost rear electrode with a tunable
perature, which will significantly increase the manufacturing costs.         WF that combines chemical stability and high efficiency.
To suppress the interaction between perovskite and metal atoms,                  Herein, we report a composite electrode that consists of (1) cop-
introducing a thin buffer layer to separate them without hindering           per–nickel (Cu–Ni) alloy and (2) in situ grown bifacial graphene.
the charge transport has been reported as a successful strategy19,20.        The alloying of Cu with Ni improves its electrochemical stability
However, materials from the perovskite or the electrode tend to              without compromising the electrical properties and makes it pos-
penetrate that buffer layer on a long timescale because achieving a          sible to tune the WF of Cu to fit the requirements of regular PSCs
thin but uniform, compact coverage on a large area with buffer lay-          by simply varying the content of Ni. Moreover, Cu–Ni alloy is an
ers that are usually formed by solution-processable small molecules          ideal substrate for preparing high-quality graphene on both sides
1
 State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, China. 2Engineering Research Center for Nanophotonics and
Advanced Instrument, Ministry of Education, School of Physics and Electronic Science, East China Normal University, Shanghai, China. 3Key Laboratory
for Advanced Materials and Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology,
Shanghai, China. 4School of Materials Science and Engineering, Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, China.
5
 Special Division of Environmental and Energy Science, Komaba Organization for Educational Excellence, College of Arts and Sciences, University of
Tokyo, Tokyo, Japan. 6Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne
(EPFL), Lausanne, Switzerland. 7These authors contributed equally: Xuesong Lin, Hongzhen Su, Sifan He, Yenan Song. ✉e-mail: sjtu-wyb@sjtu.edu.cn;
han.liyuan@sjtu.edu.cn
a b 28
CNG electrode 24
                                                                                                                  20
                                   EVA
Perovskite 12
                                                                                                                   8
                                   SnO2
                                                                                                                            Ag
                                                                               400 nm                                       CNG-5
                                   FTO                                                                             4
                                                                                                                            CNG-10
                                                                                                                            CNG-15
                                                                                                                   0
                                                                                                                        0     0.2      0.4        0.6      0.8        1.0     1.2
                                                                                                                                                VOC (V)
          c                                                                                    d                  450
                          25
                                                                                                                                                                 EVA–0.8 wt% GN
                                                                                                                  400                                            EVA–1.6 wt% GN
                                                                                                                                                                 EVA–2.4 wt% GN
                          20
                                                                                                                  350
                                                                                                                                             37.8 µs
                                                                                              Photovoltage (mV)
          JSC (mA cm–2)
                                                                                                                  300
                          15                                                                                                                 34.5 µs
                                                                                                                  250
10 200
                                                                                                                  150
                           5              EVA–0.8 wt% GN                                                                                     20.1 µs
                                          EVA–1.6 wt% GN                                                          100
                                          EVA–2.4 wt% GN
                           0                                                                                      50
                               0                   0.4               0.8                1.2                         –100       0       100        200      300       400      500
                                                           VOC (V)                                                                             Time (µs)
e f
140 140
120 120
100 100
80 80
60 60
40 40
                                                                                        20                                                                                    20
                                                                           10 µm                                                                                 10 µm
                                                                                        0                                                                                     0
Fig. 2 | The structure and performance of PSCs with aperture areas of 0.09 and 1.02 cm2. a, Cross-sectional SEM image of CNG-10 device. b, J–V curves
of CNG and Ag devices with an aperture area of 0.09 cm2 under forward scan. c,d, J–V curves (c) and corresponding transient photovoltage results (d) of
1.02 cm2 CNG devices with modified adhesive layers with different mass ratios of GN in EVA. e,f, Raman mapping of G peak for 1.6 wt% (e) and 2.4 wt%
(f) GN in EVA. The colour bars in e and f represent the intensity of the G peak with arbitrary units.
   The integral devices are fabricated by hot pressing CNG elec-                                   time are optimized to be 3 bar and 60 seconds, respectively, after
trodes on the semi-device with the structure of fluorine-doped                                     the measurement of the resistance of the CNG electrodes/EVA/
tin oxide (FTO)/SnO2/perovskite/HTM. A thin adhesive layer                                         spiro-MeOTAD/FTO (Supplementary Fig. 7a,b). It is also found
(~2.9 nm) of thermoplastic ethylene vinyl acetate (EVA) copo-                                      that the resistance will increase when the time is over 120 seconds
lymer with a WF of 3.69 eV and a deep HOMO level of −7.48 eV                                       (3 bar, 130 °C), while the pressure seems to have no obvious influ-
(Supplementary Fig. 6a–c) is employed at the interface to assist the                               ence on the sample resistance.
combination of HTMs and CNG electrodes and to fill the possible                                        To further investigate the effect of time and pressure for hot
gaps left after hot pressing, which is beneficial for realizing efficient                          pressing on the thermally instable spiro-MeOTAD, UV-vis absorp-
carrier tunnelling and thereby enhanced ohmic contact29. The tem-                                  tion spectroscopy and X-ray diffraction were employed; as the
perature of hot pressing is set at 130 °C, which is a conventional                                 time for hot pressing exceeds 120 seconds, the featured peak of
value for EVA-based materials30,31. In addition, the pressure and                                  spiro-MeOTAD at ~375 nm in UV-vis absorption spectroscopy
                                                                                                                                                   Current (A)
            1.0 × 109                                                                                                                                            1 × 10–6
             3 × 106
                                                                                                                                                                 1 × 10–7
             2 × 106
             1 × 106                                                                                                                                             1 × 10–8
                                              ×5
                   0                                                                                                                                             1 × 10–9
                                                                                                                                                                        –0.5        –0.4        –0.3        –0.2         –0.1
                                                                                                                            )2
                                                                             3
                                                                        O
                                          O
                                                                                                            3
                            3
                                                                                                    H
                         H
                                                                                                                                           H
                                                                                                                            3
                                                                                                                         H
                                      N
                                                                                                    C
                        N
                                                                                                                                           O
                                                                        2
                                                                        N
13
                                                                                                                        C
                                                                                                O
                                                                                    H
                                                                                                                                        O
                                                          3
                                                       H
Potential (V)
                                                                                                                    (O
                                                                       16
                                                                                                                                       C
                                                      C
                                                                                    9
                                                                                  C
                                                                                                                                       3
                                                                                                                                    H
                                                                                                                    2
                                                                                                                    H
                                                                   10
                                                                                            H
                                                                   C
                                                                                                                                   C
                                                                                                                C
c                   Ag device                                  d            CNG-10 device                       e                Ag device                                    f        CNG-10 device
                                                                                                                                                                                                                         103
Perovskite Perovskite
SnO2/FTO SnO2/FTO
                                      y
                                          z
                                              x
                                                                                                y
                                                                                                    z
                                                                                                        x                                      y
                                                                                                                                                    z
                                                                                                                                                            x                                                y
                                                                                                                                                                                                                 z
                                                                                                                                                                                                                     x   0
Fig. 3 | The stabilizing mechanism of CNG electrodes. a, GC-MS peak areas of products for the aged Ag and CNG-10 devices. RH, relative humidity. The
peak area is with arbitrary units. b, Tafel curves for the Cu, Cu–Ni and CNG-10 electrodes in NaCl solution (3.5 wt%). c,d, The spatial distribution of I− in
the aged Ag (c) and CNG (d) devices. e,f, The spatial distribution of Ag− (e) and Cu− (f) in the aged Ag and CNG devices. The measurement area in c–f is
100 μm by 100 μm. The colour bar in c–f represents the intensity of the ions with arbitrary units.
starts to decrease (Supplementary Fig. 7c). In addition, the crys-                                                      in Supplementary Fig. 9a, and the integrated current density of
tallization peaks of spiro-MeOTAD appear in X-ray diffraction                                                           25.77 mA cm−2 shows a minimal mismatch with the short-circuit
patterns (Supplementary Fig. 7e), indicating the recrystallization                                                      current density (JSC) from the J–V scan (26.16 mA cm−2). The
of spiro-MeOTAD32–34. However, the increase in pressure from                                                            steady-state PCE is measured to be 24.28% (Supplementary
0 to 9 bar doesn’t have an obvious influence on spiro-MeOTAD                                                            Fig. 9b), which is consistent with the PCE measured by the J–V
(Supplementary Fig. 7d,f). The results of UV-vis absorption spec-                                                       curves. The detailed photovoltaic parameters of Fig. 2b are sum-
troscopy and X-ray diffraction are consistent with the change in                                                        marized in Supplementary Table 3. The inferior performance of the
the resistance of the CNG electrodes/EVA/spiro-MeOTAD/FTO.                                                              CNG-5 and CNG-15 devices can be attributed to the lower quality
The effect of the hot pressing (temperature, 130 °C; pressure,                                                          of graphene, leading to charge accumulation at the HTM–electrode
3 bar; time, 60 seconds) on the perovskite and the charge transfer                                                      interface. This effect can be verified by capacitance–voltage (C–V)
at the perovskite–spiro-MeOTAD interface were then investi-                                                             measurements via searching the characteristic peaks in capacitance
gated. As shown in Supplementary Fig. 8a,b, the perovskite films                                                        at a specific region of bias under light35. As shown in Supplementary
before and after hot pressing show a similar morphology with a                                                          Fig. 10a–d, the C–V curve of the CNG-10 device shows no obvious
microscale grain size. The X-ray diffraction patterns both show                                                         peaks, indicating the fast charge transport in the device, whereas the
a strong featured peak of α-FAPbI3 at 13.9°, and the peak at 11.8°                                                      CNG-5 device shows a peak at approximately −1.1 V and the CNG-
for the photo-inactive δ-FAPbI3 is not observed (Supplementary                                                          15 device shows peaks at both approximately −0.3 V and approxi-
Fig. 8c), which is consistent with the results of Supplementary Fig.                                                    mately −1.1 V, indicating the charge accumulation in those devices.
4b. Supplementary Fig. 8d exhibits the time-resolved photolumi-                                                             Twenty devices of each batch were fabricated; the histogram of
nescence results of the glass/perovskite/spiro-MeOTAD before and                                                        average PCE values is shown in Supplementary Fig. 11. The CNG-10
after hot pressing, which show a similar decay with average car-                                                        devices exhibit a narrower distribution of PCE compared with the
rier lifetimes of around 7.0 ns; the fitted results are summarized in                                                   other CNG devices and thereby a higher reproducibility due to the
Supplementary Table 2. All the results demonstrate that hot press-                                                      uniform and high-quality graphene layer, as demonstrated in Fig. 1.
ing with optimized conditions will not damage the perovskite, the                                                       To show the effect of the adhesive layer on the performance of the
spiro-MeOTAD or their interface.                                                                                        CNG device, we also fabricate a CNG-10 device without the EVA
    Figure 2a shows the cross-sectional SEM image of a CNG device;                                                      layer, which shows a comparatively low efficiency of 20.65%, prob-
the EVA is too thin to be distinguishable so that it can realize efficient                                              ably due to the unfilled gaps at the interface (Supplementary Fig. 12).
carrier tunnelling. The current density–voltage (J–V) curves of PSCs                                                        We further fabricated a CNG device with an aperture area of
using CNG-5, CNG-10, CNG-15 and Ag electrodes (the CNG-5,                                                               1.02 cm2. However, a much lower PCE of 15.43% was achieved
CNG-10, CNG-15 and Ag devices, respectively) under a forward                                                            (Supplementary Fig. 13a), probably due to the non-uniformity of
scan are presented in Fig. 2b. The CNG-10 device obtained a PCE                                                         hot pressing, which may cause larger gaps at the interface beyond the
of 24.34% with an aperture area of 0.09 cm2, which is comparable                                                        thickness of EVA. In this case, we slowed down the rotation speed
with that of the Ag device (best PCE = 24.65%). The correspond-                                                         of EVA from 6,000 to 5,500 and 5,000 r.p.m., and the RS of the cor-
ing incident photon–electron conversion efficiency is provided                                                          responding devices first decreases and then suddenly increases to a
1.0 95%
                                         0.6
                                                                                                                                Ag devices
                                                                                                                                Au devices
                                         0.4
                                                                                                                                SG devices
                                                                                                                                CNG-10 devices
                                         0.2
                                               0   1,000      2,000                  3,000                  4,000                   5,000
                                                                              Time (h)
Fig. 4 | The stabilizing effect of CNG electrodes on devices. The operational stability of the encapsulated Ag, Au, SG and CNG-10 devices at the MPP
under one sun illumination (100 mW cm−2 in ambient conditions). The devices for stability tests use the stable chlorinated graphene oxide/PTAA to
replace the spiro-MeOTAD. The initial efficiencies are illustrated in Supplementary Fig. 21. The error bars denote standard deviations for five individual
devices. Data of the cut-off normalized efficiencies are presented as 30.9 ± 0.9%, 29.1 ± 1.8%, 59.3 ± 4.1% and 95.1 ± 0.9% for the Ag, Au, SG and CNG-10
devices, respectively. The individual data are provided in the Source Data file.
much higher value (Supplementary Fig. 13b), which means that the               colour of the perovskite remains black, while the perovskite under
choice of 5,000 r.p.m. leads to the formation of an insulating layer           Ag turns yellow (Supplementary Fig. 16f,g). To exclude the effect
too thick to allow charge tunnelling. To allow for higher EVA thick-           of electrode thickness, the permeation rates of water (water vapour
ness in localized areas with larger gaps, we mitigated resistive losses        transmission rate) and oxygen (oxygen transmission rate) for the
via addition of GN in EVA to boost the conductivity. The carbonyl              CNG-10 electrodes are measured and decrease to 3.32% and 5.38%
group (C=O) on the branch chain of EVA can interact with GN via                of the initial values for the Cu–Ni alloy after being equipped with
van der Waals forces, as confirmed by the small blueshift (~0.33 eV)           the air-tight and hydrophobic graphene (Supplementary Fig. 17a,b).
of the C=O peak measured by X-ray photoelectron spectroscopy                   The reduced permeability meets the requirements for encapsula-
(XPS) in Supplementary Fig. 13c, which helps the formation of                  tion38. To study this encapsulation effect of CNG electrodes on
a conductive network of GN in the EVA matrix36. As is shown in                 devices, in Fig. 3a, we conducted gas chromatography–mass spec-
Supplementary Fig. 13d, the volume resistance of EVA goes through              trometry (GC-MS) to compare the volatile products escaping from
a sudden drop when the mass ratio of GN reaches 1.6 wt%, and fur-              the Ag and CNG-10 devices after aging tests at 85 °C and 85% rela-
ther increase to 2.4 wt% barely improves the conductivity, indicating          tive humidity in air for 500 hours39. Barely any volatile products
the formation of a stable conductive network.                                  are found for the CNG device, except for a small quantity of NH3
    The J–V curves of the devices with 0.8 wt%, 1.6 wt% and 2.4 wt%            and NO. By contrast, a variety of products are detected for the Ag
GN in EVA are shown in Fig. 2c (the 0.8%, 1.6% and 2.4% devices,               device, including the additive 4-tert-butylpyridine from the HTM
respectively). Obviously, the PCE of the device is greatly improved            and the CH3COOH hydrolysed from the passivation layer by the
to 20.76% (certified PCE, 20.86%; Supplementary Fig. 14) when                  intrusion of moisture. The GC-MS results demonstrate the superior
the network is constructed (1.6% device); the corresponding                    damp-heat stability of the CNG device.
incident photon–electron conversion efficiency is provided in                      To investigate the electrochemical corrosion of the CNG elec-
Supplementary Fig. 13e, showing a minimal mismatch with the                    trodes, Tafel curves for Cu, Cu–Ni and CNG-10 are measured
JSC from the J–V scan (<3%). In addition, no obvious hysteresis                (Fig. 3b). Compared with Cu, the corrosion current is lower at the
is observed (Supplementary Fig. 13f), and the steady-state PCE is              anodic section for Cu–Ni, implying a slower corrosion rate due
measured to be 20.80% (Supplementary Fig. 15), which is consis-                to alloying with Ni. For the sample of CNG-10, the self-corrosion
tent with the PCE measured by the J–V curves. However, a drop                  potential (Ecorr) positively shifts from −0.34 V (Cu and Cu–Ni) to
in the optoelectronic performance is found for the 2.4% device,                −0.29 V, representing a much higher resistance to chemical corro-
especially in the open-circuit voltage (VOC) and the fill factor. To           sion, which is due to not only the blocking of water and oxygen, but
discover the reason, we measured the transient photovoltage decay              also the decrease in the migration rate of ionic species that can trig-
to analyse the charge carrier dynamics in the devices (Fig. 2d). The           ger oxidation and reduction40.
faster decay of transient photovoltage for the 2.4% device suggests a              The effect of the CNG-10 electrode on the suppression of
shorter charge carrier lifetime than that for the 1.6% device, which           migrated ions and metal atoms in the devices is further demon-
may be related to the aggregation of GN37. The distribution of GN              strated. After removing the package and peeling off the electrodes
in EVA is characterized by Raman spectra (Fig. 2e,f); apparent                 of the devices that were aged at the MPP for 1,000 hours, XPS mea-
aggregation of GN represented by the red regions in the figure is              surement revealed an I− signal inside the CNG-10 that was much
found in EVA with 2.4 wt% GN, which may bring about a higher                   lower than that inside the Ag (Supplementary Fig. 18a,b), a result
concentration of defects that cause extra non-radiative losses at the          that preserves the morphologies of spiro-MeOTAD and perovskite,
interface. A variety of conductive additives can be chosen to boost            as shown in Supplementary Fig. 18c,d. The spatial distributions
the conductivity of the copolymer. However, to guarantee the sta-              of I−, Ag−, Au− and Cu− for the aged Ag, Au and CNG devices
bility of the interface, stable materials with good dispersity will be         were analysed by time-of-flight secondary ion mass spectroscopy
the priority selection.                                                        (Supplementary Fig. 18e,f and Supplementary Fig. 19a). Obviously,
                                                                               the I− (Fig. 3c) and Ag− (Fig. 3e) in the aged Ag device have migrated
Stabilizing mechanism of CNG electrode. To reveal the stabilizing              over the whole depth of the device. Even though the migration
mechanism of CNG, we first studied its resistance to water and oxy-            of I− (Supplementary Fig. 19b) and metal atoms (Supplementary
gen. As shown in Supplementary Fig. 16a–e, the contact angle with              Fig. 19c) is suppressed in the aged Au device compared with the
water in air increases from 74.9° for a Ag electrode to 102° for CNG-          Ag device, there are still (AuI2)− signals (Supplementary Fig. 19d)
10, which should be beneficial for repelling water. Even if water is           and Au clusters (Supplementary Fig. 19a) that are detected in the
dropped on and stays on the surface of CNG-10 for 24 hours, the                perovskite layer, which is detrimental to the long-term stability