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Microelectronics Fabrication Guide

The document discusses the fabrication process of microelectronic devices. It describes how a computer is used to layout complex device designs and how wafer masks are used to deposit materials onto substrates in specific patterns to form transistors, resistors, and interconnects. It then discusses two common fabrication methods - diffusion and epitaxial. Diffusion involves doping semiconductor material by controlling temperature and time to diffuse impurity atoms. Epitaxial involves growing a crystal layer on another crystal with the same orientation. Isolation and vacuum evaporation are also briefly mentioned.

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86 views3 pages

Microelectronics Fabrication Guide

The document discusses the fabrication process of microelectronic devices. It describes how a computer is used to layout complex device designs and how wafer masks are used to deposit materials onto substrates in specific patterns to form transistors, resistors, and interconnects. It then discusses two common fabrication methods - diffusion and epitaxial. Diffusion involves doping semiconductor material by controlling temperature and time to diffuse impurity atoms. Epitaxial involves growing a crystal layer on another crystal with the same orientation. Isolation and vacuum evaporation are also briefly mentioned.

Uploaded by

johnlester maggay
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© © All Rights Reserved
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fabrication of Microelectronics Devices

Component Arrangement – A computer is used to prepare the layout for complex devices. the
computer is able to store the characteristics of thousands of Efficient component placement

figure 1.7 ic maskfigure 1.8 Wader mask distribution


pattern

wafer mask – is a device used to deposit


materials in a substrate. it allows material to be
deposited in certain areas, but not in others. when
used in proper sequence, conductor, semiconductor, or insulator materials may be applied to the
substrate to form transistor, resistors, capacitors, and interconnecting leads.

Two types of monolithic fabrication will silicon


figure 1.10 be discussed.
crystalThese are the DIFFUSION
and water
figure 1.9 crytal furnace
METHOD and theEPITAXIAL METHOD.

diffusion method-
is the movement of impurity
atoms in a semiconductor
material at high temp. the concentration of impurity of atom is diffusion into the wafer and is controlled
by controlling the temperature of the oven and the time that the silicon wafer is allowed to remain in
the oven. this is called doping

figure 1.11

Figure 1.12 Planar-diffused transistor.

Epitaxial method – the


process of growing a crystal of a
particular orientation on top of
another crystal, where the orientation is determined by the underlying crystal. The creation of
various layers in semiconductor wafers, such as those used in integrated circuits, is a typical
application for the process.

ISOLATION.—Because of the closeness of components in ICs, ISOLATION from each other becomes a very
important factor. Isolation is the prevention of unwanted interaction or leakage between components. This
leakage could cause improper operation of a circuit.

VACUUM EVAPORATION.—Vacuum evaporation is a method used to deposit many types of materials in a


highly evacuated chamber in which the material is heated by electricity,

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