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Week 14 Quiz 3: Modern Mosfets ECE 606: Solid State Devices

This document contains a 4 question quiz about modern MOSFETs. The questions cover threshold voltage roll-off, the motivation for increasing substrate doping in each technology generation, the primary reason for replacing planar MOSFETs with FinFETs, and the purpose of intentionally straining MOSFETs.

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103 views1 page

Week 14 Quiz 3: Modern Mosfets ECE 606: Solid State Devices

This document contains a 4 question quiz about modern MOSFETs. The questions cover threshold voltage roll-off, the motivation for increasing substrate doping in each technology generation, the primary reason for replacing planar MOSFETs with FinFETs, and the purpose of intentionally straining MOSFETs.

Uploaded by

jubairruby
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Week

 14  Quiz  3:    Modern  MOSFETs  


ECE  606:  Solid  State  Devices  
Mark  Lundstrom  
Purdue  University,  Spring  2013  
 
Answer  the  four  multiple  choice  questions  below  by  choosing  the  one,  best  answer.    
 
 
1) What  is    threshold  voltage  “roll-­‐off”?  
a)     A  reduction  in  the  magnitude  of  the  threshold  voltage  as  the  channel  length  
decreases.  
b)   An  effect  caused  by  two-­‐dimensional  MOS  electrostatics.  
c)   A  reduction  of  gate  control  over  the  channel  potential.  
d)   All  of  the  above.  
e)   None  of  the  above.    
 
 
2) Why  do  transistor  designers  increase  the  substrate  doping  of  a  bulk  MOSFET  every  
technology  generation?  
a)     To  increase  the  threshold  voltage.  
b)   To  increase  reliability.  
c)   To  reduce  threshold  voltage  roll-­‐off.  
d)   To  increase  the  oxide  capacitance..  
e)   To  lower  the  metal-­‐semiconductor  work  function  difference..  
 
 
3) What  is  the  primary  motivation  for  replacing  planar  MOSFETs  with  FinFETs?  
a)     To  lower  series  resistance.  
b)   To  reduce  parasitic  capacitance.    
c)   To  lower  the  noise  figure.  
d)   To  improve  gate  control  over  the  channel  and  reduce  threshold  voltage  roll  off.  
e)   To  decrease  the  subtreshold  swing  below  60  mV/decade.  
 
 
4) Why  are    MOSFETs  intentionally  strained?  
a)     To  reduce  threshold  voltage  variations.  
b)     To  lower  the  surface  state  density.  
c)   To  decrease  series  resistance.  
d)     To  increase  the  channel  mobility  and,  therefore,  the  drain  current.  
e)   To  adjust  the  gate  workfunction.  
 
 
 
Turn  in  to  Ms.  Wanda  Dallinger,  EE-­‐326  by  Monday,  April  22.      

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