Cc ® MOTOROLA Semiconductor Products Inc. AN915 Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS jared by AlPshaenich Motorola inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con- tain integral Collector-to-Emitter (C-E) and Drain-to-Source {D-S) diodes which for certain inductive load applications can be used as commutating diodes. Whether these diodes fast enough or have adequat be addressed by this paper. Also described is a ‘real world”” test circuit which accurately cheracterizes the diedes for switching times. The surge current capability and forward characteristics of a number of devices are also listed. el ‘When turning off inductive loads with a semiconductor ‘witch, some means must be used to suppress, limit or ‘lamp the resulting “inductive kick” (e = L difdt) from ‘exceeding the breakdown voltage ofthe switch. Various topes of eupprestors or “anubher” cirenita auch at Zeners, ‘MOVs, RC networks and clamp or “free-wheeling” diodes tare generally used. The energy stored in the inductor and diverted from the transistor at turn-off is harmlessly diasipated in the snubber, thus protecting the transistor witch. "To protect single transistor ewitches, the snubbercan beplaced across either the inductor or the transistor. A Zener diode or RC anubber circuit can protect the collectoremitter ofthe transistor or drain-sourceof the power MOSFET, buta simple clamp diode acrossthese Fespective terminals will not, asit will only come into ‘operation if its reverse blocking voltage is exceeded. However, in the multi-transistor configurations com- monly used for switching regulators, inverters and motor controllers, clamp diodes across the semi conductor switches are frequently used (Figure 1). The diodes do not protect their respective transistors but rather the complementary transistor. As an example, in the toter-pole configuration of Figure 1C, diode D2 protects transistorQi and Di protects Q2. Toillustrate (hin, aneuine Q2 ia initially conducting, causing load current to flow up through the inductor from ground, ‘When Q2 tums off, the inductive current will continue butnow through DI, through the power supply V* and return to the ground side ofthe inductor. Consequently, the fly-back voltage will be clamped to V" (from V"), resulting in an amplitude of 2.0 V when V* = V-. Ifthe output power devices are Darlington transistors with their internal monolithic CE diodes or power MOSFETs with D-S diodes, the question arises as to whether these diodes are capable of adequately clamp ing the turn-off inductiveload current. In other words, dothe diodes switch fast enough andcan they takethe commutated load current? ‘The purpose of this paper is to “real world’ charac terize the C-E and DS diode of many Motorola Darling tons and power MOSFETs so that the circuit designer ‘can make the performance/cost tradeofs of either using these internal diodes or discrete outboard ones. SWITCHING CHARACTERISTICS ‘The important ewitching characteristics of clamp diodes in ewitchmode applicationsare reverse recovery timety, and turn-on time tyy. Diodes with long ty times ccan cause excessive turn-on stress on the transistor hey should be protecting as both thediode and the transis- tors will be conducting during this time interval. The result will be a feed through collector current spike which could exceed the forward bias SOA of the tran lotor, the diodehas relatively alow t, timen or high overshoot veltage—modulation voltage VeM(DYN)— then, in a similar manner, the transistor might not adequately be protected during inductive turnoff.v v a a Vv vv FIGURE TA — Common Emitior FIGURE 18 — Common Collector FIGURE 10 — Totem Pole Complementary Push-Pull : ‘ i] else FIGURE 1 — 172 Bridge FIGURE TE — Wedge FIGURE 7F — Transformer Push Pal feet ee een eee ee cease oe ee ecm isi acaiaaen: | csuuc cnr istenna aaa aus ies tescrmsonteteteocicee | ceiemnas aoere ners ‘Figures 2A and 2B. There are several problems associ- was derived from a capacitor dump, tuned circuit, the ec eunicntatencngan cums anNtesstscmencamigienl Se ee renin reas a i R = ‘ohm, 10 W, an Ip} ~ 20 A results ‘To produce an offbias to the driver, which can shape its turn-off time and consequently the diode turn-on time, the negative going edge of the output pulse from the buffer is used. Capacitor C1 and resistor R5 forma differentiating circuit to produce the negative pulse for turning on PNP transistor Q3 and the following NPN transistor Q4. This transistor acts us the off-bias switch, applying to thedriver a negative voltage pulse (approximately V") coincident with the trailing edge of the input pulse and lasting as long as the RSC1 time constant, about5.0 us for the component values shown,