The document discusses diode equivalent circuit models including:
1. The complete diode model which is the most accurate and includes a barrier potential, small forward resistance, and large reverse resistance.
2. The practical model which simplifies the complete model by neglecting resistance and assuming a 0.7V drop when forward biased.
3. The ideal model which is the least accurate and represents a diode as a simple closed switch when forward biased and open switch when reverse biased.
It also discusses transition and diffusion capacitance effects and reverse recovery time which is important for high-speed switching applications.
The document discusses diode equivalent circuit models including:
1. The complete diode model which is the most accurate and includes a barrier potential, small forward resistance, and large reverse resistance.
2. The practical model which simplifies the complete model by neglecting resistance and assuming a 0.7V drop when forward biased.
3. The ideal model which is the least accurate and represents a diode as a simple closed switch when forward biased and open switch when reverse biased.
It also discusses transition and diffusion capacitance effects and reverse recovery time which is important for high-speed switching applications.
The document discusses diode equivalent circuit models including:
1. The complete diode model which is the most accurate and includes a barrier potential, small forward resistance, and large reverse resistance.
2. The practical model which simplifies the complete model by neglecting resistance and assuming a 0.7V drop when forward biased.
3. The ideal model which is the least accurate and represents a diode as a simple closed switch when forward biased and open switch when reverse biased.
It also discusses transition and diffusion capacitance effects and reverse recovery time which is important for high-speed switching applications.
The document discusses diode equivalent circuit models including:
1. The complete diode model which is the most accurate and includes a barrier potential, small forward resistance, and large reverse resistance.
2. The practical model which simplifies the complete model by neglecting resistance and assuming a 0.7V drop when forward biased.
3. The ideal model which is the least accurate and represents a diode as a simple closed switch when forward biased and open switch when reverse biased.
It also discusses transition and diffusion capacitance effects and reverse recovery time which is important for high-speed switching applications.
Electronics Circuits: Devices and Analysis ECE220a
I. DIODE EQUIVALENT CIRCUITS
An equivalent circuit is a combination of elements properly chosen to best represent the actual terminal characteristics of a device or system in a particular operating region. a. Piecewise-Linear Equivalent Circuit • Also known as “The Complete Diode Model “. • The most accurate approximation and includes the barrier potential, the small forward dynamic resistance and the large internal reverse resistance. • The reverse resistance is taken into account because it provides a path for the reverse current. • When the diode is forward-biased, it acts as a closed switch in series with the equivalent barrier potential voltage (VB) and the small forward dynamic resistance. • When the diode is reverse-biased, it acts as an open switch in parallel with the large internal reverse resistance. The barrier potential does not affect reverse bias. • In forward biased, the voltage (VF) consists of the barrier potential voltage plus the small voltage drop across the dynamic resistance. • This model is generally suited to design problems using a computer for simulation. Figure 1. The complete model of a diode.
b. Simplified Equivalent Circuit
• Also known as “The Practical Model” . • This model includes the barrier potential. • When the diode is forward-biased, it is equivalent to a closed switch in series with a small equivalent voltage source (VF) equal to the barrier potential (0.7 V) with the positive side toward the anode. • This equivalent voltage source represents the barrier potential that must be exceeded by the bias voltage before the diode will conduct and is not an active source of voltage. • When conducting, a voltage drop of 0.7 V appears across the diode. • When the diode is reverse-biased, it is equivalent to an open switch just as in the ideal model. • The barrier potential does not affect reverse bias. • In forward bias, the barrier potential is included and the dynamic resistance is neglected, the diode is assumed to have a voltage across it. • The diode is assumed to have zero reverse current. • The practical model is useful when you are troubleshooting in lower-voltage circuits and when designing basic diode circuits • In this model, the 0.7 V drop across the diode may be significant and should be taken into account. Figure 2. The practical model of a diode.
3 c. Ideal Equivalent Circuit • The Ideal Diode Model is the least accurate approximation and can be represented by a simple switch. • When the diode is forward-biased, it ideally acts like a closed (on) switch • When the diode is reverse-biased, it ideally acts like an open (off) switch • the barrier potential, the forward dynamic resistance, and the reverse current are all neglected. • Since the barrier potential and the forward dynamic resistance are neglected, the diode is assumed to have a zero voltage across it when forward-biased. • Since the reverse current is neglected, its value is assumed to be zero • The reverse voltage equals the bias voltage. • This model is adequate for most troubleshooting, when you are trying to determine if the diode is working properly, or to figure out the operations of a circuit and are not concerned with more exact values of voltage or current. Figure 3. The ideal model of a diode.
Figure 4. Diode Equivalent Circuits Model 5
II. TRANSITION and DIFFUSION CAPACITANCE
It is important to realize that: Every electronic or electrical device is frequency sensitive.
In general, he transition capacitance is the predominant capacitive effect in the reverse-bias T region whereas the diffusion capacitance is the predominant capacitive effect in the forward-bias region.
III. REVERSE RECOVERY TIME
• In the forward-bias state, a large number of electrons from the n -type material progressing through the p -type material and a large number of holes in the n - type material—a requirement for conduction. • The electrons in the p - type material and holes progressing through the n - type material establish a large number of minority carriers in each material. If the applied voltage should be reversed to establish a reverse-bias situation, we would ideally like to see the diode change instantaneously from the conduction state to the nonconduction state. • However, because of the large number of minority carriers in each material, the diode current will simply reverse and stay at this measurable level for the period of time t s (storage time) required for the minority carriers to return to their majority-carrier state in the opposite material. In essence, the diode will remain in the short-circuit state with a current I reverse determined by the network parameters. Eventually, when this storage phase has passed, the current will be reduced in level to that associated with the nonconduction state. This second period of time is denoted by t t ( transition interval). • The reverse recovery time is the sum of these two intervals: storage time and transition interval. That is, Reverse Recovery Time, t rr t rr = ts + tt • This is an important consideration in high-speed switching applications.
• Most commercially available switching diodes have reverse recovery time in the range of a few nanoseconds to 1 ms
