Silicon NPN Power Transistor: Description
Silicon NPN Power Transistor: Description
Silicon NPN Power Transistor: Description
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
·Complement to Type 2SB507
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for the output stage of 15W to 25W AF power
amplifier.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.4 1.0 V
hFE-1 Classifications
C D E F
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.