www.DataSheet4U.

com
Ordering number : ENA0279 2SC6082

SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor

2SC6082 50V / 15A High-Speed Switching Ap-

plications
Applications
• High-speed switching applications (switching regulator, driver circuit).

Features
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCES 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 15 A
Collector Current (Pulse) ICP PW≤10µs, duty cycle≤10% 20 A
Base Current IB 3 A
2 W
Collector Dissipation PC
Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0A 10 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 10 µA
hFE1 VCE=2V, IC=330mA 200 560
DC Current Gain
hFE2 VCE=2V, IC=10A 50
Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72606 / 31506FA MS IM TB-00002089 No. A0279-1/4

Free Datasheet http://www.datasheet4u.com/
 2SC6082
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Gain-Bandwidth Product fT VCE=10V, IC=2A 195 MHz
Output Capacitance Cob VCB=10V, f=1MHz 85 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.5A, IB=375mA 200 400 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=7.5A, IB=375mA 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0Ω 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0A 6 V
Turn-ON Time ton See specified Test Circuit. 52 ns
Storage Time tstg See specified Test Circuit. 560 ns
Fall Time tf See specified Test Circuit. 37 ns

Package Dimensions Switching Time Test Circuit

unit : mm
7508-002
IB1
PW=20µs
10.0 4.5 D.C.≤1% IB2 OUTPUT
3.2 2.8
INPUT RB
3.5

VR RL
7.2

50Ω + +
16.0

100µF 470µF
18.1

VBE= --5V VCC=25V

1.6
5.6

1.2
IC=20IB1= --20IB2=5A
14.0

0.75 0.7

1 2 3
1 : Base
2.4

2 : Collector
3 : Emitter

2.55 2.55
SANYO : TO-220ML

IC -- VCE IC -- VCE
15 10
From a top A
50m
mA

40mA
mA

14 300mA
mA

9
90

250mA
80

13
30mA
70

12 200mA 50mA 8
180mA
Collector Current, IC -- A

Collector Current, IC -- A

11 150mA 40mA
60m

7
10 120mA 20mA
100mA 30mA
9 6
15mA
8
mA

20mA 5
7
10mA
100

6 70mA 60mA 4
A
5 90mA 80m 10mA 3
4 5mA
3 2
2
1
1
IB=0mA IB=0mA
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT10574 Collector-to-Emitter Voltage, VCE -- V IT10575

No. A0279-2/4
 2SC6082
IC -- VBE hFE -- IC
16 1000
VCE=2V VCE=2V
7
14
5
Ta=75°C
Collector Current, IC -- A

12 3
25°C

DC Current Gain, hFE

10
2 --25°C

8 100
7
6

25°C °C
5

75

C
Ta=
4 3

--25°
2
2

0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Base-to-Emitter Voltage, VBE -- V IT10576 Collector Current, IC -- A IT10577
hFE -- IC f T -- IC
1000 1000
Ta=25°C VCE=10V
7 7

Gain-Bandwidth Product, f T -- MHz

5 5
V
3 CE 3
=2
DC Current Gain, hFE

.0
2 V 2
0.5

1.0V
0.2V

100 100

7 7
0.7V

5 5

3 3

2 2

10 10
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT10578 Collector Current, IC -- A IT10579
Cob -- VCB VCE(sat) -- IC
1000 7
7
f=1MHz 5 IC / IB=20
Saturation Voltage, VCE(sat) -- V

5
3
Output Capacitance, Cob -- pF

3 2

2
0.1
Collector-to-Emitter

7
100
5
7
3 °C
5
=75 5°
C
2 Ta --2
3

2 °C
0.01 25
7
10 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V IT10580 Collector Current, IC -- A IT10581
VCE(sat) -- IC VBE(sat) -- IC
7 3
IC / IB=50 IC / IB=20
5
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VBE(sat) -- V

2
3

1.0
Ta= --25°C
Collector-to-Emitter

0.1

7 7
Base-to-Emitter

5 °C 75°C
75 25°C
C

= 5
5°

Ta
--2

3
°C
2 25 3

0.01 2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- A IT10582 Collector Current, IC -- A IT10583

No. A0279-3/4
 2SC6082
Forward Bias A S O PC -- Ta
5 2.5
3 ICP=20A
2

IC=15A 10

Collector Dissipation, PC -- W
10 2.0
0m

1m

PT
7
Collector Current, IC -- A

=5
5

00
3

µs
10
2 No

ms
1.5

DC
1.0 he
at

op
7 sin

era
5 k

t
ion
3 1.0
2

0.1
7
5 0.5
3 Tc=25°C
2
Single pulse
0.01 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT10584 Ambient Temperature, Ta -- °C IT10560
PC -- Tc
30

25
Collector Dissipation, PC -- W

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT10561

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0279-4/4