Zener Diode Circuit Working and Applications
Zener Diode Circuit Working and Applications
Objective:
1.) To study forward and reverse bias characteristics of a zener diode and to
determine the threshold and zener break-down voltage.
Components:
Equipment:
Theory:
Fig.1: Symbol of
Zener diode
Zener reverse breakdown is due to electron quantum tunnelling caused by a
high-strength electric field. However, many diodes described as "Zener" diodes
rely instead on avalanche breakdown. Both breakdown types are used in Zener
diodes with the Zener effect predominating at lower voltages and avalanche
breakdown at higher voltages.
Uses:
Zener diodes are widely used in electronic equipment of all kinds and are
one of the basic building blocks of electronic circuits. They are used to
generate low-power stabilized supply rails from a higher voltage and to
provide reference voltages for circuits, especially stabilized power supplies.
They are also used to protect circuit from overvoltage, especially in
electrostatic discharge (ESD).
Fig.2:
Zener Diode behaviour
Figure 2 shows the current versus voltage curve for a Zener diode. Observe the
nearly constant voltage in the breakdown region.
The forward bias region of a Zener diode is identical to that of a regular diode.
The typical forward voltage at room temperature with a current of around 1 mA
is around 0.6 volts (silicon diodes). In the reverse bias condition, the Zener diode
is an open circuit and only a small leakage current is flowing as shown on the
exaggerated plot. As the breakdown voltage is approached the electron and
holes will begin to avalanche which increases the reverse current.
The initial transition from leakage to breakdown is soft but then the current
rapidly increases as shown on the figure-2. The voltage across the Zener diode in
the breakdown region is very nearly constant with only a small increase in voltage
with increasing current. At some high current level, the power dissipation of the
diode becomes excessive and the diode gets destroyed. So, there is a minimum
Zener current, I Z (min ) that places the operating point in the desired breakdown
voltage. Also, there is a maximum Zener current I Z (max ), at which the power
dissipation drives the junction temperature to the maximum current allowed by
the manufacture. Beyond I Z (max )current, the diode gets damaged.
Circuit Diagram:
Procedure:
Fig. (7): Reverse bias of zener diode(Current, I DR =0.7 mA , Voltage acroos diode V DR=4.36 V ¿
Observations:
0.220 2.88
0.470 4.6
2.2 5.15
4.7 5.00
8.2 5.09
10 5.09
22 5.00
47 5.01
100 5.02
220 5.04
1MΩ 5.17
Graph
1. Now mark +ve X-axis as V DF ,+ve Y-axis as I DF ,for forward bias condition.(Fig-
8)
15
Current through Zener diode (mA)
10
0
-6 -5 -4 -3 -2 -1 0 1 2
-5
-10
-15
5
Voltage across Zener Diode, VZ (V)
0
0.01 1 100 10000
c). The load current I L if a load resistor of 1kΩ is connected across the zener diode.
VZ 5V
I L= = =5 mA
R L 1000 Ω
I Z =I −I L =400 mA−0=400 mA
Precautions:
1. While doing the experiment do not exceed the bias voltage above 15V. This
may lead to damaging of the diode.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit
diagram. Do not switch ON the power supply unless you have checked the
circuit connections as per the circuit diagram.
Result: