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Mosfet-4: Basic FET Amplifiers

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MOSFET-4

Basic FET Amplifiers


MOSFET Transconductance, gm
• Transconductance (gm) is a measure of how much the drain
current changes when the gate voltage changes.

I D
gm 
VGS

• For linear amplifier function, FET is normally biased in the


saturation region.
NMOS Transistor Small-Signal
Parameters
• Derivation of gm

ID = Kn (VGS2 – 2VGSVTN – VTN2)


ID = Kn VGS2 – 2 Kn VGSVTN – Kn VTN2)

𝜕𝐼𝐷 Differentiation of ID
𝑔𝑚 = = 2Kn VGS – 2 Kn VTN = 2 Kn (VGS – VTN) with respect to V
𝜕𝑉𝐺𝑆 GS
AC PARAMETERS- 𝝅 − 𝑴𝒐𝒅𝒆𝒍

gmvgs
Need to do DC Analysis first vgs
to find ID

VA : Early voltage
Discrete MOSFET Transistor Amplifier
circuits

1- Common Source Amplifier circuit


2- Common Gate Amplifier circuit
3- Common Drain Amplifier circuit
System Parameters

𝑣𝑖𝑛
𝑅𝑖𝑛 =
𝑖𝑖
𝑣𝑜
𝑣𝑜 𝐴𝑣 =
𝑅𝑜𝑢𝑡 = 𝑣𝑖𝑛
𝑖𝑜
The MOSFET Amplifier - COMMON SOURCE

• The output is measured at the drain terminal


• The gain is negative value
Find Rin,Rout and Av
DC equivalent circuit:

* “C” open circuit


𝑅𝑖𝑛 = 𝑅𝐺

𝑟 𝑅
𝑅𝑜𝑢𝑡 = 𝑅𝐷 //𝑟𝑜 = 𝑟 𝑜+𝑅𝐷
𝑜 𝐷
𝑣𝑖𝑛
𝑜𝑟 𝑅𝑖𝑛 = = 𝑅𝐺
𝑖𝑖
𝑣𝑜
𝑜𝑟 𝑅𝑜 = = 𝑅𝐷 //𝑟𝑜
𝑖𝑜
𝑣𝑜 𝑣𝑑𝑠
𝐴𝑣 = =
𝑣𝑖𝑛 𝑣𝑔𝑠

𝑣𝑑𝑠 = 𝑣𝑜 = −𝑔𝑚 𝑣𝑔𝑠 (𝑅𝐷 //𝑟𝑜 //𝑅𝐿 )

𝑣𝑑𝑠
= −𝑔𝑚 𝑅𝐷 //𝑟𝑜 //𝑅𝐿 = 𝐴𝑣
𝑣𝑔𝑠

Let 𝑅𝐿′ = 𝑅𝐷 //𝑟𝑜 //𝑅𝐿 therefore 𝐴𝑣 = −𝑔𝑚 𝑅𝐿′


Overall voltage gain G:

𝑣𝑜 𝑣𝑜 𝑣𝑔𝑠 𝑣𝑔𝑠
𝐺= = ∗ = 𝐴𝑣
𝑣𝑠𝑖𝑔 𝑣𝑔𝑠 𝑣𝑠𝑖𝑔 𝑣𝑠𝑖𝑔

𝑅𝐺
𝑣𝑔𝑠 = 𝑣𝑠𝑖𝑔
𝑅𝐺 + 𝑅𝑠𝑖𝑔

𝑣𝑜 𝑣𝑜 𝑣𝑔𝑠 ′
𝑅𝐺
𝐺= = ∗ = −𝑔𝑚 𝑅𝐿
𝑣𝑠𝑖𝑔 𝑣𝑔𝑠 𝑣𝑠𝑖𝑔 𝑅𝐺 + 𝑅𝑠𝑖𝑔
Common Source with source resistance
𝑣𝑜 = −𝑔𝑚 𝑣𝑔𝑠 (𝑅𝐷 //𝑅𝐿 )
𝑣𝑖𝑛
𝑅𝑖𝑛 = = 𝑅𝐺
𝑖𝑖 𝑣𝑜
= −𝑔𝑚 𝑅𝐷 //𝑅𝐿
𝑣𝑔𝑠
𝑅𝑜𝑢𝑡 = 𝑅𝐷
𝑣𝑜
Let 𝑅𝐿′ = 𝑅𝐷 //𝑅𝐿 therefore = −𝑔𝑚 𝑅𝐿′
𝑣𝑜 𝑣𝑜 𝑣𝑔𝑠 𝑣𝑔𝑠
𝐴𝑣 = = ∗
𝑣𝑖𝑛 𝑣𝑔𝑠 𝑣𝑖𝑛
1
𝑔𝑚
1 𝑣𝑔𝑠 = 𝑣𝑖𝑛
𝑣𝑜 𝑣𝑜 𝑣𝑔𝑠 1
𝑔𝑚 + 𝑅𝑠
𝑔𝑚
𝐴𝑣 = = ∗𝑣 =- 1 𝑔𝑚 𝑅𝐿′
𝑣𝑖𝑛 𝑣𝑔𝑠 𝑖𝑛 +𝑅𝑠
𝑔𝑚
𝑣𝑜 𝑣𝑜 𝑣𝑔𝑠 𝑣𝑖𝑛
𝐺= = ∗ ∗
𝑣𝑠𝑖𝑔 𝑣𝑔𝑠 𝑣𝑖𝑛 𝑣𝑠𝑖𝑔 𝑣𝑜
= −𝑔𝑚 𝑅𝐿′
𝑣𝑔𝑠

1
𝑔𝑚
𝑣𝑔𝑠 = 𝑣𝑖𝑛
1
𝑔𝑚 + 𝑅𝑠

𝑅𝐺
𝑣𝑖𝑛 = 𝑣𝑠𝑖𝑔
𝑅𝐺 + 𝑅𝑠𝑖𝑔

1
𝑅𝐺 𝑔𝑚
𝐺 = −𝑔𝑚 𝑅𝐿′
𝑅𝐺 + 𝑅𝑠𝑖𝑔 1
𝑔𝑚 + 𝑅𝑠

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