SEMICONDUCTOR KTC3198A

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C
FEATURES
・Excellent hFE Linearity

A
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
N DIM MILLIMETERS
・Low Noise : NF=1dB(Typ.). at f=1kHz. K E A 4.70 MAX
G B 4.80 MAX
・Complementary to KTA1266A. D C 3.70 MAX
D 0.45

J
E 1.00
F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
MAXIMUM RATING (Ta=25℃) F F K 0.55 MAX
L 2.30
CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX
N 1.00
1 2 3

C
Collector-Base Voltage VCBO 60 V

M
1. EMITTER
Collector-Emitter Voltage VCEO 50 V 2. COLLECTOR
3. BASE
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
TO-92 (F)
Base Current IB 50 mA
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
DC Current Gain
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Base Intrinsic Resistance rbb' VCB=10V, IE=1mA, f=30MHz - 50 - Ω
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB
Note : hFE(1) Classification O:70～140, Y:120～240, GR:200～400, BL:300~700

2010. 1. 28 Revision No : 1 1/3

 KTC3198A

I C - VCE h FE - I C
240 1k
COMMON COMMON
5.0
COLLECTOR CURRENT IC (mA)

6.0 EMITTER 500

200 3.0 EMITTER
Ta=25 C

DC CURRENT GAIN h FE
2.0
300
VCE =6V
160 Ta=100 C
Ta=25 C
1.0 Ta=-25 C
120 100

80 0.5 50
30
VCE =1V
40 I B=0.2mA

0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)

V CE(sat) - I C V BE(sat) - I C
10
COLLECTOR-EMITTER SATURATION

3
COMMON COMMON
BASE-EMITTER SATURATION

EMITTER EMITTER
5
VOLTAGE VBE(sat) (V)

1 I C /I B =10 I C/I B =10

VOLTAGE VCE(sat) (V)

3
Ta=25 C
0.5
0.3
1
0.1
0.5
0.05 Ta=100 C
0.3
0.03 25 C
-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

fT - IE I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)

COMMON EMITTER COMMON

VCE =-10V 1k EMITTER
BASE CURRENT I B (µA)

1k Ta=25 C VCE =6V

300
500
300 100
5 C
0 C

30
25 C
Ta=2
0
Ta=1

100
Ta=-

10
50
3
30
1
10 0.3
-0.1 -0.3 -1 -3 -10 -30 -100 -300 0 0.2 0.4 0.6 0.8 1.0 1.2

EMITTER CURRENT I E (mA) BASE-EMITTER VOLTAGE V BE (V)

2010. 1. 28 Revision No : 1 2/3

 KTC3198A

h PARAMETER - I C h PARAMETER - VCE

2k 2k
COMMON EMITTER f=270Hz COMMON EMITTER
1k I C =2mA Ta=25 C f=270Hz
1k VCE =12V Ta=25 C
BL BL
300 h fe 300 Y h fe
GR Y GR
O O
100 100
BL
h PARAMETER

h ie x kΩ GR

h PARAMETER
30 Y 30
BL
GR O BL GR h oe
h oe x µ
Ω BL
Y 10
10 O
GR O Y
BL
3 3 Y h ie x kΩ GR
BL O Y
1 1
Y O
GR -4
0.3 O 0.3 h re x 10
h re x 10 -4
0.1 0.1
0.1 0.3 1 3 10 30 50 0.5 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V)

Pc - Ta
700
COLLECTOR POWER DISSIPATION

600

500
PC (mW)

400

300

200

100

0
0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE Ta ( C)

2010. 1. 28 Revision No : 1 3/3