Experiment – 6

Bipolar Junction transistor characteristics and biasing of BJT

Objectives:
The objective of this experiment is to identify of npn-BJT and pnp-BJT using DMM and then to
learn about the output characteristics of BJT and comparing with characteristics obtained from
curve tracer and also to find the value of Alpha α and Beta β from output characteristics of BJT
and also to find small signal parameters of BJT from the output characteristics and to determine
operating point for the given BJT and evaluate the voltage divider biasing circuit and then find
gain of common emitter amplifier in the mid band frequencies using voltage divider biasing.
Equipment & Components:
DMM, Tektronix Curve Tracer, Oscilloscope, signal generator, DC power supply,
potentiometers 1M_, resistances,
capacitors, BJT 2N3904 and 2N3906
Procedure:
The identification of the npn-BJT and pnp-BJT is done using DMM in diode mode and then the
measure ment of the turn on voltage of emitter base junction is done and also , labeling of the
emitter, base, and collector lead is done and then comparison with the lead diagram of the BJTs
is done. Then the data sheet of the two transistors is obtained from the internet. The Connection
of the npn-BJT circuit shown in Figure-1 with RB ~200K_, and RC~1K_, 1M_ potentiometer
connected to base through RB, and 10K_ potentiometer connected to collector through RC is
done.

Figure – 1: npn-BJT Characteristics circuit

Then the Change of 1MΩ potentiometer is done so that voltage across RB (VRB) is 2V acquired
which will provide base current IB = VRB/RB = 2/200KΩ= 10μA. Then this value is kept fixed
and change VCE by adjusting 10K_ potentiometer from 2V to10V in step of 2V, and then IC =
VRC/1kΩ is found. Then the value of beta and alpha are also found. Then the value of IB is
changed to 20 μA, and 30 μA, and repeat the step above again. Then
The graph of IC vs. VCE as function of IB is plotted and then the determination of maximum
and minimum value of β is done . Then the Use of Tektronix curve tracer to obtain the output
characteristics IC vs. VCE of the npn-BJT was done. Then by using cursor command, the
emitter resistance re, transconductance gm, and output resistance of the BJT ro, is found by
finding Early Voltage VA. Then small signal equivalent circuit of the npn-BJT was drawn.
Then the Simulation of the npn-BJT with SPICE for the output characteristics IC vs. VCE was
done and then Comparison of simulated, measured, and Tektronix curve tracer characteristics
with reference to small signal parameters was done. Then the Connection of the voltage divider
biasing circuit for the npn-BJT is done as shown in Figure-2 using R1~30 KΩ, R2~5
KΩ,RE~500 Ω, RC~2 KΩ, and VCC ~ 20V. Then the calculation of the node voltages and
branch currents for the circuit is done and then comparison is done with the measured values.
Then the operating point and collector emitter voltage, base current, and collector current
corresponding to operating point is found. Then the determination of the value of β at the
operating point.

Figure – 2: Voltage Divider biasing circuit for npn-BJT

The connection of the circuit is done as shown in Figure-3 and apply an input signal vsig ~
500mV at 5 KHz or at the frequency where output is maximum, and the determination of the
over all voltage gain vo/vsig.

Figure – 3: Common-Emitter Amplifier circuit with voltage divider biasing.

 The values of R1, R2, RC, RE, VCC are used as above step, and then the value of CC1 = CC2
~ 10μF, CE ~ 100μF, and RL ~2KΩ is done . the simulation with SPICE of the Figure-3
circuit is done
Measurement:

For 2N3906,

VEB=0.717V

VCB=0.712 hence, it is PNP BJT.

For 2N3904,

VBE=0.677V

VCB=0.675V hence, it is NPN BJT.

Characteristics of NPN BJT:-

Connecting npn-BJT
Rb = 200.1k
Rc = 0.99 k
Potentiometer 1M and 10 K

At Ib = 10
uA and Vrb
=2V
Vce(V) Vrc(V) Ie(mA) Ic(mA) beta alpha
2 1.62 1.6 1.65 163.37 0.99
0.98830
4 1.705 1.71 1.69 169 4
0.99418
6 1.732 1.72 1.71 171 6
0.98863
8 1.734 1.76 1.74 174 6
10 1.761 1.77 1.76 176 0.99435
 1.8
1.75
1.7
1.65
1.6
1.55
1.5
1 2 3 4 5 6 7 8 9 10 11

At Ib =
20 uA
and Vrb
=4V
Vce(V) Vrc(V) Ie(mA) Ic(mA) beta alpha
0.99062
2 3.165 3.2 3.17 158.5 5
0.98787
4 3.26 3.3 3.26 163 9
0.98795
6 3.27 3.32 3.28 164 2
0.98813
8 3.31 3.37 3.33 166.5 1
0.99411
10 3.39 3.4 3.38 169 8

3.45
3.4
3.35
3.3
3.25
3.2
3.15
3.1

At Ib =
30 uA
and Vrb
=6V
Vce(V) Vrc(V) Ie(mA) Ic(mA) beta alpha
2 4.85 4.89 4.87 162.3333 0.99591
4 4.97 5.04 5.02 167.3333 0.996032
6 5.08 5.12 5.1 170 0.996094
 8 5.17 5.24 5.22 174 0.996183
10 5.24 5.32 5.28 176 0.992481

5.4
5.3
5.2
5.1
5
4.9
4.8
4.7
4.6
1 2 3 4 5 6 7 8 9 10 11

The maximum value of Beta β=176

The minimum value of Beta β=158.5

Calculation:

Re =
470
Rc =
1.97k
R1 =
32k
R2 = 5k
Branch current
Node voltages (V) (mA)
Vc 10.54 Ic 4.72
Ve 2.22 Ie 4.77
Vb 2.917 Ib 44.4 uA

Vce 8.34

Here, Vcc=20V

B=106

R1=30KΩ

R2=5KΩ
VB= R2/ (R2+R1) * VCC =2.85 V

VBE=+0.7V

VE=VB-VBE=2.15V

IE=VE/RE=4.57mA

IC=β/ (β+1)*IE= 4.26mA

IB=IC/β=40.1uA

From spice simulation:-

VE=1.62V

VB=2.3 V

gm = IC/VT= 0.172A/V

rπ = β/gm = 106/0.172 = 616.3Ω

RB=R1//R2= 4.3KΩ

Rin=RB//rπ=0.539KΩ

Vout= -gm (RC//RL) * Rin/ (Rin+Rsig) * Vsig = 4.47 V

Overall voltage gain = Vout/ Vsig=-133V/V

Measurement of overall gain:-

CC1=CC2=10uF

CE=100uF

P-P Vsig =33.6mV

RL=2KΩ

Rsig=50Ω

P-P Vout=3.46V

Overall voltage gain= -102.3 V/V