3/8/2020 HW6: Introduction to Microtechnology (2020 Spring)
HW6
Due Mar 8 at 11:59pm Points 18 Questions 21
Available Mar 5 at 12am - Mar 8 at 11:59pm 4 days Time Limit None
Allowed Attempts 3
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Attempt History
Attempt Time Score
LATEST Attempt 1 9 minutes 14.93 out of 18
Score for this attempt: 14.93 out of 18
Submitted Mar 8 at 1:45pm
This attempt took 9 minutes.
Question 1 1 / 1 pts
Wet bulk etching is faster than dry etching by a factor of 100
True
Correct!
False
Question 2 1 / 1 pts
Compared to dry etching, wet etching provides a wider variety of
techniques for MEMS micromachining
Correct!
True
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3/8/2020 HW6: Introduction to Microtechnology (2020 Spring)
False
Question 3 1 / 1 pts
Select the wrong statement about bulk machining
liquids are used for wet bulk etching
plasmas are used for dry etching
plasmas and liquids are both used for etching
Correct!
plasmas are used for wet etching
Question 4 0.8 / 0.8 pts
Select the incorrect statement about isotropic etching
Acids such as HNA are used
Acids such as HNA cause material removal at the same rate in all
directions
Round features form in isotropic etching of silicon single crystal
Correct!
while basic etchants require lower temperatures, HNA etching is performed
at temperatures higher than 50 °C.
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Question 5 0.8 / 0.8 pts
Which one of the following statements is WRONG about micromachining
Correct! Only silicon single crystal is used for micromachining
Both poly-crystalline and single crystal is used for micromachining
Silicon wafers can have diameters of 40-150 mm and thicknesses of 550-
650 microns
The orientation of the wafer makes a difference on the inclination of the
walls created by anisotropic etching
Question 6 0.8 / 0.8 pts
Which one of the following is not True about Deep Reactive Ion Etching
Ion etching allows the removal of substrate material by an
eroding beam
In reactive ion etching (RIE), the eroding beam reacts with the
surface
Deep Reactive Ion Etching (DRIE) is variation of RIE which is
Commercially important
Correct! Takes advantage of a side-effect of a glow charge
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Question 7 0.8 / 0.8 pts
Doping facilitates isotropic etching of silicon.
Correct!
True
False
Good work
Question 8 0.8 / 0.8 pts
Orientation-dependent anisotropic etching of single crystalline silicon
allows much faster etching rate of low index planes {100} and {110}. It
leaves the slower etching {111} planes behind
Correct!
True
False
Good work
Question 9 0.53 / 0.8 pts
Select All Correct Statements about Electrochemical Etching
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orrect Answer It provides anodic dissolution of silicon
ou Answered For n-type silicon Electrons are supplied to its surface.
Electron holes in the conduction band of silicon react with the protons in
the solution
Correct!
Protons are reduced to hydrogen.
Correct!
n-type silicon Needs High reverse bias
Correct!
Or illumination of the surface of Si.
Correct!
For p-type silicon A small forward bias is required
It will produce low anodic current
Correct!
Illumination-assisted anodic dissolution of n-type silicon is associated with
photocorrosion,
It is used in photoelectrochemical etching as an electrochemical polishing
process.
Question 10 0.8 / 0.8 pts
Select All Correct Statements about Limiting factor in etching:
Correct!
in isotropic etching: diffusion of acid to- and removal of hydrates b) from
the reaction front are limiting factors
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in anisotropic etching: diffusion of acid to- and removal of hydrates from
the reaction front are limiting factors
Correct!
In anisotropic oxidation: Reaction rate is the limiting factor
In isotropic oxidation: Reaction rate is the limiting factor
Correct!
Diffusion is fast for the anisotropic etching, with reaction rate being the
limiting factor
Diffusion is fast for the isotropic etching, with reaction rate being the
limiting factor
Good work
Question 11 0 / 0.8 pts
Which one of the following does not pose a challenge in anisotropic
etching
Slow etching rates (1 micron/ min)
Correct!
Fast etching rates (200 microns/min)
ou Answered Relatively high solution temperatures (usually 80-110 °C) needed
orrect Answer
Relatively low solution temperatures (usually 10-30 °C) needed
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That's not correct
Question 12 0.8 / 0.8 pts
Which one of the following does not pose a challenge in isotropic etching?
Need for precision masks
well controlled agitation of the solution
maintained temperatures
Correct!
maintained pressures
Lack of lateral dimension control
Good work
Question 13 0.8 / 0.8 pts
Which one of the following is NOT true about isotropic etching?
Simple photoresist mask used
Electron holes generated by electrical power supply
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They are transferred to chemical reaction front in a chemical reaction cell
filled with etchant solution.
Correct!
A negative bias is established between the silicon (cathode) and a counter
(platinum) electrode as anode.
Good work
Question 14 0.8 / 0.8 pts
Which one of the following is WRONG about Plasma-Assisted Dry
Etching
Provides better control of anisotropy and selectivity
Correct! Produces more contamination to the environment.
Silicon based materials can be etched by plasmas:
Plasmas include F2, CF4 + O2, CF4 + N2O, SiF4 +O2, SF6, SF6 + O2,
NF3, and ClF324.
Dry etching is vital to the fabrication of Si-MEMS
Good work
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Question 15 0.8 / 0.8 pts
Which one of the following is a critical factor in doping of silicon:
Correct! Dopant type (n- or p-),
Doping energy
Correct! Dopant concentration (>1018/cm3)
Doping velocity
Good work
Question 16 0.8 / 0.8 pts
Which one of the following statements is NOT true about Variation of
Isotropic etching:
Immersion etching
spray etching,
electrolytic etching
gas-phase etching
molten salt etching
Correct! molten metal etching
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Good work
Question 17 0.8 / 0.8 pts
Which one the following statements is not correct about Anisotropic
Etching (Select ALL)
Both single- and poly-crystalline silicon are used for micromachining.
Correct!
Most applications use polycrystalline silicon
Good work
Question 18 0.8 / 0.8 pts
Which one the following statements is not correct about Anisotropic
Etching (Select ALL)
Anisotropic etching provides lateral dimension control
Correct!
An accuracy of 5 nm or better is achieved.
The lateral dimension can be related to the vertical profile
Correct!
It allows the measurement of the recessed feature width.
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Different etch stops are used to reach desired depths for recessed
features.
Good work
Question 19 0 / 1 pts
The etch rate of silicon depends on orientation, the type and concentation
of wet etching solution and the temperature. Find the etch rate of silicon
for (100) planes using 24.1% concentration KOH at 60C
ou Answered
2.876
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orrect Answer 2.688 margin of error +/- 5%
Question 20 1 / 1 pts
Calculate the specific gravity of KOH as approximated from its mass
fraction, f=0.794
Assume: a0=0.9727,a1=0.866 and a2=0.3051
Correct!
1.8527
orrect Answer 1.853 margin of error +/- 1%
Question 21 0 / 1 pts
Exercise 3: The etch rate of silicon in KOH is given as 4 microns per
minute. How many seconds does it take for a pit of 2 microns depth to be
etched
ou Answered
16
orrect Answer 30 margin of error +/- 1%
Quiz Score: 14.93 out of 18
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