The document describes an NPN transistor called the BUT70W that is intended for use in high frequency converters and industrial equipment. It provides high current capability and fast switching speeds. The document provides specifications, maximum ratings, thermal data, and electrical characteristics for the transistor.
The document describes an NPN transistor called the BUT70W that is intended for use in high frequency converters and industrial equipment. It provides high current capability and fast switching speeds. The document provides specifications, maximum ratings, thermal data, and electrical characteristics for the transistor.
The document describes an NPN transistor called the BUT70W that is intended for use in high frequency converters and industrial equipment. It provides high current capability and fast switching speeds. The document provides specifications, maximum ratings, thermal data, and electrical characteristics for the transistor.
The document describes an NPN transistor called the BUT70W that is intended for use in high frequency converters and industrial equipment. It provides high current capability and fast switching speeds. The document provides specifications, maximum ratings, thermal data, and electrical characteristics for the transistor.
■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN
APPLICATION 3 2 ■ SWITCHING REGULATORS 1 ■ MOTOR CONTROL
■ HIGH FREQUENCY AND EFFICENCY
CONVERTERS TO-247
DESCRIPTION The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers INTERNAL SCHEMATIC DIAGRAM and industrial equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit V CEV Collector-emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V I E(RMS) Emitter Current 40 A I EM Emitter Peak Current 120 A IB Base Current 8 A I BM Base Peak Current 24 A P tot Total Power Dissipation at T case < 25 C o 200 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C
February 2002 1/4
BUT70W
THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.63 C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off V CE = 200 V 1 mA Current (R BE = 5Ω) V CE = 200 V T C = 100 o C 5 mA I CEV Collector Cut-off V CE = 200 V 1 mA Current (V BE = -1.5V) V CE = 200 V T C = 100 o C 4 mA IEBO Emitter Cut-off V EB = 5 V 1 mA Current (I C = 0) V CEO(sus) ∗ Collector-Emitter I C = 0.2 A L = 25 mH 125 V Sustaining Voltage (I B = 0) V(BR)EBO Emitter-Base I E = 50 mA 7 V Breakdown Voltage (I C = 0) VCE(sat) ∗ Collector-Emitter IC = 70 A IB = 7A 0.9 V Saturation Voltage IC = 70 A IB = 7A T C = 100 o C 1.5 V IC = 35 A IB = 1.75 A 0.9 V IC = 35 A IB = 1.75 A T C = 100 o C 1.2 V V BE(sat) ∗ Base-Emitter IC = 70 A IB = 7A 1.8 V Saturation Voltage IC = 70 A IB = 7A T C = 100 o C 1.9 V IC = 35 A IB = 1.75 A 1.4 V IC = 35 A IB = 1.75 A T C = 100 o C 1.4 V dic /d t ∗ Rated of Rise of V CC = 100 V RC = 0 I B1 = 3.5 A 140 A/µs on-state Collector t p = 3 µs T C = 100 o C Current ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
INDUCTIVE LOAD Symbol Parameter Test Conditions Min. Typ. Max. Unit ts Storage Time I C = 35 A V CC = 90 V 1.8 µs tf Fall Time V BB = -5 V R B2 = 1.4 Ω 0.2 µs tc Cross Over Time ΙB1 = 1.75 A L C = 0.15 mH 0.35 µs V CLAMP = 125V T C = 100 o C
2/4 BUT70W
TO-247 MECHANICAL DATA
mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
P025P
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