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STRUCTURE Silicon Monolithic Integrated Circuit

NAME OF PRODUCT DC-AC Inverter Control IC

TYPE ＢＤ９２７０Ｆ
FUNCTION ・ 1ch control with Full-Bridge (For USE FET Body-Di)
・ Lamp current and voltage sense feed back control
・ Sequencing easily achieved with Soft Start Control
・ Striking time can Control independently (STRK pin)
・ Circuit protection with Timer Latch (COMP)
・ Circuit protection with quick Shutdown (COMPSD)
・ Mode-selectable the operating or stand-by mode by stand-by pin
・ Synchronous operating the other BD9270F ICs
・ BURST mode controlled by PWM input
・ Output liner Control by external DC voltage
・ Built-in Error mode output pin (FAIL pin)
○ Absolute Maximum Ratings（Ta = 25℃）
Parameter Symbol Limits

Supply Voltage VCC 20

OUTPUT DRIVER LNx, HFNx, 20
Operating Temperature Range Topr -40～+85

Storage Temperature Range Tstg -55～+150

Maximum Junction Temperature Tjmax +150

*
Power Dissipation Pd 688
*
Pd derate at 5.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)

○Operating condition
Parameter Symbol Limits
Supply voltage VCC 8.5～19.0

DRIVER frequency FOUT 30～110

REV. B
○Electric Characteristics（Ta=25℃、VCC=12V、STB=3.0V）
Limits
Parameter Symbol MIN. TYP. MAX. Unit Conditions
((WHOEL DEVICE))
Operating current Icc1 － 4.5 8.1 mA FOUT=60kHz, FB=GND, DUTY=0V
Stand-by current Icc2 － 30 70 uA
((STAND BY CONTROL))
Stand-by voltage H VstH 2 － VCC V System ＯＮ
Stand-by voltage L VstL -0.3 － 0.8 V System ＯＦＦ
((REF4V BLOCK))
REF4V output voltage VREG 3.92 4.00 4.08 V
REF4V source current IREG 5 － － mA
((VCC UVLO BLOCK))
Operating voltage (VCC) Vvccuvlo 7.0 7.5 8.0 V
Hysteresis width (VCC) ⊿Vvccuvlo 0.50 0.60 0.70 V
((OSC BLOCK))
Drive output frequency FOUT 63.0 65.0 67.0 kHz RT=18.9kΩ
RT pin voltage VRT 1.05 1.50 1.95 V
SRT ON resistance RSRT － 100 200 Ω
((SS STRK BLOCK))
Soft start current ISS 0.9 1.1 1.3 uA
SS operation start voltage VSS_ST 0.18 0.20 0.22 V
SS term END voltage VSS_ED 1.35 1.50 1.65 V
STRK current ISTRK 0.8 1.0 1.2 uA
STRK term END voltage VSTRK_ED 1.94 2.00 2.06 V
((FEED BACK BLOCK))
IS threshold voltage 1 VIS1 1.225 1.25 1.275 V
IS threshold voltage 2 VIS2 － VREFIN VIS1 V VREF applying voltage
VS threshold voltage VVS 1.22 1.25 1.28 V
IS source current 1 IIS1 － － 0.9 uA DUTY=1.5V
IS source current 2 IIS2 40 50 60 uA DUTY=0V, IS=1.0V
VS source current IVS － － 0.9 uA
IS COMP detect voltage 1 VISCOMP1 0.593 0.625 0.657 V VREFIN≧1.25V
IS COMP detect voltage 2 VISCOMP2 － 0.50 － V VREFIN= 1V
VREF input voltage range VREFIN 0.6 － 1.6 V No effect at VREF＞1.25V
((DUTY BLOCK))
DUTY threshold voltage DUTY-th 0.90 1.00 1.10 V Low = IS high (burst off)
((OUTPUT BLOCK))
LN output sink resistance RsinkLN 1.8 3.5 7.0 Ω VCC=12V
LN output source resistance RsourceLN 4.5 9.0 18.0 Ω VCC=12V
HFN output sink resistance RsinkHFN 1.8 3.5 7.0 Ω VCC=12V
HFN output source resistance RsourceHFN 4.5 9.0 18.0 Ω VCC=12V
MAX DUTY MAX DUTY 44.0 45.5 47.0 % FOUT=65kHz
((TIMER LATCH BLOCK))
Timer Latch setting voltage VCP 1.94 2.00 2.06 V
Timer Latch setting current ICP 0.9 1.0 1.1 uA
((COMP BLOCK))
COMP over voltage detect VCOMPH 1.94 2.00 2.06 V VSS＞1.65V, SRT operate, CP timer latch

Hysteresis width (COMP) ⊿VCOMPH 0.05 0.10 0.15 V

COMPSD over voltage detect VCOMPSDH 1.94 2.00 2.06 V VSS＞1.65V, OSC 2 count
Hysteresis width (COMPSD) ⊿VCOMPSDH 0.05 0.10 0.15 V
FAIL ON resistance RFAIL － 100 200 Ω
((SYNCHRONOUS BLOCK))
CT_SYNC_OUT High voltage VCT_SYNCH 3.8 4.0 4.2 V
CT_SYNC_OUT Low voltage VCT_SYNCL － － 0.5 V
CT_SYNC_OUT sink resistance RSYNC_OUT_sink － 150 300 Ω
CT_SYNC_OUT source resistance RSYNC_OUT_source － 300 400 Ω
CT_SYNC_IN High voltage input range VCT_SYNC_IN_H 2.5 － VCT_SYNCH V
CT_SYNC_IN Low voltage input range VCT_SYNC_IN_L -0.3 － 1 V
（This product is not designed to be radiation-resistant.）
 〇 Package Dimensions 〇 Pin Description

Device Mark PIN No. PIN NAME FUNCTION

1 PGND Ground for FET drivers

2 LN2 NMOS FET driver

3 HFN2 NMOS FET driver (New Function)

4 CT_SYNC_IN CT synchronous signal input pin

BD9270F 5 CT_SYNC_OUT CT synchronous signal output pin

6 REF4V Internal regulator output

External resistor from SRT to RT for adjusting the
7 SRT start-up triangle oscillator
External resistor from RT to GND for adjusting the
Lot No. 8 RT triangle oscillator

9 GND GROUND

10 DUTY Control PWM mode and BURST mode

11 FAIL Error mode OUTPUT Pin (open drain)

12 STB Stand-by switch

SOP-24 (Unit:mm) 13 CP External capacitor from CP to GND for Timer Latch

14 VREF Reference voltage input pin for Error amplifier

15 VS Error amplifier input

16 IS Error amplifier input

17 FB Error amplifier output

〇 Block Diagram 18 SS
External capacitor from SS to GND for Soft Start
Control

19 STRK Striking time setting pin

20 COMPSD Over voltage detect pin with Shutdown

21 COMP Over voltage detect pin with timer latch

22 VCC Supply voltage input

23 HFN1 NMOS FET driver (New Function)

24 LN1 NMOS FET driver

〇 NOTE FOR USE
１. This product is produced with strict quality control, but might be destroyed if used beyond its absolute
maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or
open mode.
Therefore, physical protection countermeasure, like fuse is recommended in case operating conditions go
beyond
the expected absolute maximum ratings.
２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is
within recommended operating range. The standard electrical characteristic values cannot be guaranteed
at other voltages in the operating ranges, however the variation will be small.
３. Mounting failures, such as misdirection or miscounts, may harm the device.
４. A strong electromagnetic field may cause the IC to malfunction.
５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin Voltage should be
under
VCC voltage +0.3V even if the voltage is under each terminal ratings.
６. BD9270F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD
circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to
protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.
７ . When modifying the external circuit components, make sure to leave an adequate margin for external
components actual value and tolerance as well as dispersion of the IC.
８ . About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain
voltage is switching. Make sure to leave adequate margin for this IC variation.
９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.
10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.
11. By STB voltage, BD9270F are changed to 2 states. Therefore, do not input STB pin voltage between one
state and the other state (0.8～2.0V).
12. The pin connected a connector need to connect to the resistor for electrical surge destruction.
13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A
P-N junction is formed from this P layer of each pin. For example, the relation between each
potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage.
Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that
is lower than the GND (P substrate) voltage to an input pin.
Resistance Transistor (NPN)

(PinA) B
(PinB) C
Ｃ
E GND

P＋ P P＋
N
N N
Ｎ N
P substrate Ｎ P substrate
GND GND
Parasitic diode Parasitic diode

(PinB)
(PinA)
C
B Ｂ
Parasitic diode EＥ
GND
GND
Other adjacent components Parasitic diode

Fig-1 Simplified structure of a Bipolar IC

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