The 2SB755 is a silicon PNP power transistor with a high breakdown voltage of -150V and transition frequency of 20MHz. It is housed in an MT-200 package and is intended for power amplifier applications. The transistor has absolute maximum ratings of -150V collector-emitter voltage, -12A collector current, and 120W power dissipation. Key electrical characteristics include a saturation voltage below -2.0V, current gain between 55-160, and output capacitance of 450pF.
The 2SB755 is a silicon PNP power transistor with a high breakdown voltage of -150V and transition frequency of 20MHz. It is housed in an MT-200 package and is intended for power amplifier applications. The transistor has absolute maximum ratings of -150V collector-emitter voltage, -12A collector current, and 120W power dissipation. Key electrical characteristics include a saturation voltage below -2.0V, current gain between 55-160, and output capacitance of 450pF.
The 2SB755 is a silicon PNP power transistor with a high breakdown voltage of -150V and transition frequency of 20MHz. It is housed in an MT-200 package and is intended for power amplifier applications. The transistor has absolute maximum ratings of -150V collector-emitter voltage, -12A collector current, and 120W power dissipation. Key electrical characteristics include a saturation voltage below -2.0V, current gain between 55-160, and output capacitance of 450pF.
The 2SB755 is a silicon PNP power transistor with a high breakdown voltage of -150V and transition frequency of 20MHz. It is housed in an MT-200 package and is intended for power amplifier applications. The transistor has absolute maximum ratings of -150V collector-emitter voltage, -12A collector current, and 120W power dissipation. Key electrical characteristics include a saturation voltage below -2.0V, current gain between 55-160, and output capacitance of 450pF.
