APM4546K

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features Pin Description

• N-Channel
30V/7A,
RDS(ON) =20mΩ (typ.) @ VGS = 10V
RDS(ON) =27mΩ (typ.) @ VGS = 4.5V
• P-Channel
Top View of SOP − 8
-30V/-5A,
RDS(ON) =38mΩ (typ.) @ VGS =-10V
(8) (7) (3)
RDS(ON) =46mΩ (typ.) @ VGS =-4.5V D1 D1 S2
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)
(4)
G2
(2)
G1

Applications

• Power Management in Notebook Computer, S1

(1)
D2
(5)
D2
(6)
Portable Equipment and Battery Powered
N-Channel MOSFET P-Channel MOSFET
Systems

Ordering and Marking Information

APM4546 Package Code

K : SOP-8
Lead Free Code Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code Handling Code
Temp. Range TU : Tube TR : Tape & Reel
Lead Free Code
Package Code
L : Lead Free Device Blank : Original Device

APM4546 K : APM4546 XXXXX - Date Code

XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter N Channel P Channel Unit

VDSS Drain-Source Voltage 30 -30
V
VGSS Gate-Source Voltage ±20 ±20
ID* Continuous Drain Current VGS=10V (N) 7 -5
A
IDM* Pulsed Drain Current VGS=-10V (P) 25 -20
IS* Diode Continuous Forward Current 2 -2 A
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
TA=25°C 2
PD* Power Dissipation W
TA=100°C 0.8
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM4546K
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown VGS=0V, IDS=250µA N-Ch 30
BVDSS V
Voltage VGS=0V, IDS=-250µA P-Ch -30
VDS=24V, VGS=0V 1
N-Ch
Zero Gate Voltage Drain TJ=85°C 30
IDSS µA
Current VDS=-24V, VGS=0V -1
P-Ch
TJ=85°C -30
VDS=VGS, IDS=250µA N-Ch 0.8 1.5 2
VGS(th) Gate Threshold Voltage V
VDS=VGS, IDS=-250µA P-Ch -0.8 -1.5 -2
VGS=±20V, VDS=0V N-Ch ±100
IGSS Gate Leakage Current nA
VGS=±20V, VDS=0V P-Ch ±100
VGS=10V, IDS=7A N-Ch 20 26
Drain-Source On-State VGS=-10V, IDS=-5A P-Ch 38 50
RDS(ON) a mΩ
Resistance VGS=4.5V, IDS=5A N-Ch 27 36
VGS=-4.5V, IDS=-4A P-Ch 46 60

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Electrical Characteristics (Cont.) (T A = 25°C unless otherwise noted)

APM4546K
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Diode Characteristics

a ISD=2A, VGS=0V N-Ch 0.8 1.3

VSD Diode Forward Voltage V
ISD=-2A, VGS=0V P-Ch -0.8 -1.3
Dynamic Characteristics b
N-Ch 2
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ω
P-Ch 10
N-Channel N-Ch 790
Ciss Input Capacitance VGS=0V,
VDS=15V, P-Ch 900
Frequency=1.0MHz N-Ch 130
Coss Output Capacitance pF
P-Channel P-Ch 140
VGS=0V, N-Ch 80
Reverse Transfer VDS=-15V,
Crss
Capacitance Frequency=1.0MHz P-Ch 75
N-Ch 7 14
td(ON) Turn-on Delay Time N-Channel
VDD=15V, RL=15Ω, P-Ch 7 14
IDS=1A, VGEN =10V, N-Ch 9 17
Tr Turn-on Rise Time RG=6Ω
P-Ch 12 17
ns
N-Ch 27 36
td(OFF) Turn-off Delay Time P-Channel
VDD=-15V, RL=15Ω, P-Ch 42 56
IDS=-1A, VGEN =-10V, N-Ch 6 12
Tf Turn-off Fall Time RG=6Ω
P-Ch 19 26
N-Channel
N-Ch 10
ISD=7A, dISD/dt =100A/µs
Q rr Reverse Recovery Charge nC
P-Channel
P-Ch 9
ISD=-5A, dISD/dt =100A/µs
b
Gate Charge Characteristics
N-Channel N-Ch 18.1 24
Qg Total Gate Charge
VDS=15V, VGS=10V, P-Ch 18.2 24
IDS=7A
N-Ch 1.7
Q gs Gate-Source Charge nC
P-Channel P-Ch 2.3
VDS=-15V, VGS=-10V,
IDS=-5A N-Ch 2.2
Q gd Gate-Drain Charge
P-Ch 1.6
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics
N-Channel
Power Dissipation Drain Current
2.5 8

2.0
6

ID - Drain Current (A)

Ptot - Power (W)

1.5

1.0

2
0.5

o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5
it
ID - Drain Current (A)

Lim

10
0.2
n)

1ms
s(o
Rd

0.1
10ms
0.1
0.05
1
0.02
100ms
0.01
0.01
1s
0.1
DC
Single Pulse
2
Mounted on 1in pad
O o
TA=25 C RθJA : 62.5 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics (Cont.)

N-Channel
Output Characteristics Drain-Source On Resistance
25 36
VGS= 4, 5, 6, 7, 8, 9, 10V

3V 32

RDS(ON) - On - Resistance (mΩ)

20
28
ID - Drain Current (A)

VGS=4.5V
15
24

VGS=10V
2.5V 20
10

16

5
12
2V

0 8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Transfer Characteristics Gate Threshold Voltage

25 1.8
IDS=250µA
1.6
Normalized Threshold Voltage

20
1.4
ID - Drain Current (A)

1.2
15

o 1.0
Tj=125 C
10
0.8
o
o Tj=-55 C
Tj=25 C 0.6
5
0.4

0 0.2
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics (Cont.)

N-Channel
Drain-Source On Resistance Source-Drain Diode Forward
2.0 30
VGS = 10V
1.8 IDS = 7A
Normalized On Resistance

10 o
1.6 Tj=150 C

IS - Source Current (A)

1.4
o
1.2 Tj=25 C

1.0
1
0.8

0.6

0.4
o
RON@Tj=25 C: 20mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1400 10
Frequency=1MHz VDS=15V

1200 IDS =7A

VGS - Gate - source Voltage (V)

8
1000
C - Capacitance (pF)

800 Ciss 6

600
4

400

2
200 Coss
Crss

0 0
0 5 10 15 20 25 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics (Cont.)

P-Channel
Power Dissipation Drain Current
2.5 6

5
2.0

-ID - Drain Current (A)

4
Ptot - Power (W)

1.5

1.0
2

0.5
1

o o
TA=25 C TA=25 C,VG=-10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

100 2
Normalized Transient Thermal Resistance

1
Duty = 0.5

10
it
Lim
-ID - Drain Current (A)

0.2
n)
s(o

1ms
Rd

0.1
10ms 0.1
0.05
1
0.02
100ms 0.01

1s
0.01 Single Pulse
0.1
DC

2
Mounted on 1in pad
O o
T =25 C RθJA : 62.5 C/W
0.01 A 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics (Cont.)

P-Channel
Output Characteristics Drain-Source On Resistance
20 80
VGS= -4,-5,-6,-7,-8,-9,-10V
18
70
-3V

RDS(ON) - On - Resistance (mΩ)

16
60
-ID - Drain Current (A)

14
VGS= -4.5V
12
50
10
VGS= -10V
40
8 -2.5V
6 30
4
20
2 -2V
0 10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20

-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)

Transfer Characteristics Gate Threshold Voltage

20 1.8
IDS= -250µΑ
18
1.6
Normalized Threshold Voltage

16
1.4
14
-ID - Drain Current (A)

1.2
12

10 1.0
o
8 Tj=125 C
0.8
6
o o
0.6
4 Tj=25 C Tj=-55 C
0.4
2

0 0.2
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Typical Characteristics (Cont.)

P-Channel
Drain-Source On Resistance Source-Drain Diode Forward
1.8 20
VGS = -10V
IDS = -5A 10
1.6
o
Tj=150 C
Normalized On Resistance

1.4

-IS - Source Current (A)

1.2
o
Tj=25 C
1.0 1

0.8

0.6
o
RON@Tj=25 C: 38mΩ
0.4 0.1
-50 -25 0 25 50 75 100 125 150 -0.5 0.0 0.5 1.0 1.5 2.0

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1400 10
Frequency=1MHz VDS= -15V
ID= -5A
1200
-VGS - Gate - source Voltage (V)

8
1000
C - Capacitance (pF)

Ciss
6
800

600
4

400
2
200 Coss
Crss
0 0
0 5 10 15 20 25 0 4 8 12 16 20

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

0.015X45
E H

e1 e2

A1
A 1

L
0.004max.

Millimeters Inches
Dim
Min. Max. Min. Max.
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC
φ1 8° 8°

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. B.3 - Oct., 2005
APM4546K

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
T L to T P
Ramp-up

TL
tL
Temperature

Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
- Temperature Max (Tsmax) 150°C 200°C
- Time (min to max) (ts) 60-120 seconds 60-180 seconds
Time maintained above:
183°C 217°C
- Temperature (T L)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classificatioon Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw
Rev. B.3 - Oct., 2005
APM4546K

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s

3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.

Reliability Test Program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

Po P D
E
P1

F Bo
W

Ao D1 Ko

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Rev. B.3 - Oct., 2005
APM4546K

Carrier Tape & Reel Dimensions(Cont.)

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330±1 62 ± 1.5 12.75 + 0.1 2 + 0.5 12.4 +0.2 2± 0.2 12 + 0.3 8± 0.1 1.75± 0.1
5 - 0.1
SOP-8 F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0.1 2.1± 0.1 0.3±0.013

(mm)
Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 13 www.anpec.com.tw

Rev. B.3 - Oct., 2005