1F1G
RECTRON
SEMICONDUCTOR THRU
TECHNICAL SPECIFICATION
FAST RECOVERY 1F7G
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High currenf surge
* High reliability
R-1
* Glass passivated junction
MECHANICAL DATA
* Case: Molded plastic .025 (0.65)
DIA.
* Epoxy: Device has UL flammability classification 94V-O .787 (20.0) .021 (0.55)
* Lead: MIL-STD-202E method 208C guaranteed MIN.
* Mounting position: Any
* Weight: 0.19 gram
.126 (3.2)
.106 (2.7)
.102 (2.6)
DIA.
.091 (2.3)
.787 (20.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MIN.
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
RATINGS SYMBOL 1F1G 1F2G 1F3G 1F4G 1F5G 1F6G 1F7G UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Current
IO 1.0 Amps
at T A = 25 oC
Peak Forward Surge Current 8.3 ms single half sine-wave
I FSM 25 Amps
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2) CJ 15 pF
Operating and Storage Temperature Range T J , T STG -65 to + 175 0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS SYMBOL 1F1G 1F2G 1F3G 1F4G 1F5G 1F6G 1F7G UNITS
Maximum Instantaneous Forward Voltage at 1.0A DC VF 1.3 Volts
Maximum DC Reverse Current
5.0 uAmps
at Rated DC Blocking Voltage TA = 25 oC
IR
Maximum Full Load Reverse Current Full Cycle Average, 100 uAmps
.375” (9.5mm) lead length at T L = 55 oC
Maximum Reverse Recovery Time (Note 1) trr 150 250 500 nSec
NOTES : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2001-5
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
RATING AND CHARACTERISTIC CURVES ( 1F1G THRU 1F7G )
FIG. 1 - TYPICAL FORWARD CURRENT FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
DERATING CURVE SURGE CURRENT
AVERAGE FORWARD CURRENT, (A)
1.0 200
PEAK FORWARD SURGE
8.3ms Single Half Sine-Wave
(JEDED Method)
.8 100
CURRENT, (A)
.6
50
.4 30
Single Phase
Half Wave 60Hz
.2 Resistive or 20
Inductive Load
0 10
0 25 50 75 100 125 150 175 1 5 10 50 100
AMBIENT TEMPERATURE, ( ) NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
20 10
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
10 6
4
3.0 TJ = 25 2 TJ = 50
1.0
1.0 .6
.4
0.3
.2 TJ = 25
.1
0.1
Pulse Width=300uS .06
1% Duty Cycle .04
.03
.02
.01 .01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140
INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
JUNCTION CAPACITANCE, (pF)
200
50 10
NONINDUCTIVE NONINDUCTIVE trr
100 +0.5A
60
(-)
40 D.U.T 0
(+)
PULSE
25 Vdc GENERATOR -0.25A
20 (approx) (NOTE 2)
(-)
1 OSCILLOSCOPE (+)
10 TJ = 25
NON- (NOTE 1)
INDUCTIVE
6 -1.0A
1cm SET TIME BASE FOR
4 NOTES:1 Rise Time = 7ns max. Input Impedance =
50/100 ns/cm
1 megohm. 22pF.
2 2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
