SILICON CARBIDE (SiC)
Silicon carbide (SiC) is a compound of silicon and carbon bonded together to form
ceramics, but it also occurs in nature as the extremely rare mineral moissanite.
Silicon carbide has a density of 3.2 g/cm³, and its high sublimation temperature
(approximately 2700 °C) makes it useful for bearings and furnace parts. Silicon carbide
does not melt at any known pressure. It is also highly inert chemically. In addition, it has
strong coupling to microwave radiation, which together with its high sublimation point,
permits practical use in heating and casting metals. SiC also has a very low coefficient of
thermal expansion (4.0 × 10-6/K) and experiences no phase transitions that would cause
discontinuities in thermal expansion.
Pure SiC is colorless. The brown to black color of industrial product results from iron
impurities. The rainbow-like luster of the crystals is caused by a passivation layer of
silicon dioxide that forms on the surface.
Silicon carbide is a popular abrasive in modern lapidary due to the durability and low
cost of the material. Due to its wide band gap, SiC-based parts are capable of operating at
high temperature (over 350 °C), which together with good thermal conductivity of SiC
makes SiC devices good candidates for elevated temperature applications. Although
diamond has an even higher band gap, SiC-based devices are easier to manufacture
because it is more convenient to grow an insulating layer of silicon dioxide on the surface
of a silicon carbide wafer than it is on diamond.
In manufacturing, it is used for its hardness in abrasive machining processes such as
grinding, honing, water-jet cutting and sandblasting. Particles of silicon carbide are
laminated to paper to create sandpapers and the grip tape on skateboards.
Silicon-infiltrated carbon-carbon composite is used for high performance brake discs as it
is able to withstand extreme temperatures. The silicon reacts with the graphite in the
carbon-carbon composite to become silicon carbide.