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Chapter 4: Single and Multiport

Networks-Lecture2

4.3 Network Properties and Applications

4.3.1 Interrelations between Parameter Sets:
• Depending on the particular circuit configuration, we may be forced to
convert between different parameter sets to arrive at a particular
input/output description

1- Low-frequency transistor parameters are often recorded in h-

matrix form

2-When cascading the transistor with additional networks, ABCD-

matrix may be more appropriate

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Introduction
• The objective of the second part of this chapter is to learn:

1- Basic network input-output parameter relations including:

impedance, admittance, hybrid, and ABCD-parameters for linear
circuits
2- Conversion between the above sets
3- Rules of connecting networks and how more complicated circuits can
be constructed by series and parallel connections as well as cascading
of individual network blocks

4-The scattering parameters: An important practical way of

characterizing RF/MW circuits and devices through the use of power
wave relations

4.4 Scattering Parameters

• In RF systems, the scattering or S-parameter representation plays a
central role
• At RF frequencies, practical system characterizations through simple
open- or short-circuit measurements can no longer be applied

1- A short circuit wire possesses an inductance that can be of

substantial magnitude at high frequencies
2- The open circuit leads to a capacitive loading at the terminal

• The open/short circuit conditions needed to determine Z-, Y-, h- and

ABCD-parameters can no longer be guaranteed L

• With the S-parameters, the RF engineer has a tool to characterize the

two-port network of all RF devices J

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4.4 Scattering Parameters

4.4.1 Definition of Scattering Parameters:
• S-parameters are power wave descriptors that permit us to define the
input-output relations of a network in terms of incident and reflected
power waves
• Consider the two-port network shown below:

a1 and a2 are the incident wave at port 1 and port 2

b1 and b2 are the reflected wave at port 1 and port

• The S-parameters are defined as follows:

é b1 ù é S11 S12 ù é a1 ù
êb ú = ê S úê ú
ë 2 û ë 21 S22 û ëa2 û

4.4 Scattering Parameters

4.4.1 Definition of Scattering Parameters:
§ Consider the two-port network shown below:

é b1 ù é S11 S12 ù é a1 ù
êb ú = ê S úê ú
ë 2 û ë 21 S22 û ëa2 û

b1 reflected power wave at port 1

S11 = =
a1 a2 = 0
incident power wave at port 1 Port 2 is matched

b2 transmitted power wave at port 2

S 21 = =
a1 a2 = 0
incident power wave at port 1 port 2 is matched

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4.4 Scattering Parameters

4.4.1 Definition of Scattering Parameters:
§ Consider the two-port network shown below:

é b1 ù é S11 S12 ù é a1 ù
êb ú = ê S úê ú
ë 2 û ë 21 S22 û ëa2 û

b2 reflected power wave at port 2

S 22 = =
a2 a1 = 0
incident power wave at port 2 Port 1 is matched

b1 transmitted power wave at port 1

S12 = =
a2 a1 = 0
incident power wave at port 2 port 1 is matched

4.4 Scattering Parameters

4.4.1 Definition of Scattering Parameters:

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4.4 Scattering Parameters

4.4.2 Meaning of S-parameters:
• The S-parameters can only be determined under conditions of perfect
matching on the input or output side
Case 1: Measurement of S11 and S21:

• For this case, we have to ensure that on the output side, the line
impedance Z0 is matched for a2=0 to be enforced:

Z in - Z 0
S11 = Gin =
Z in + Z 0

4.4 Scattering Parameters

4.4.2 Meaning of S-parameters:
• The S-parameters can only be determined under conditions of perfect
matching on the input or output side
Case 1: Measurement of S11 and S21:

• The forward power gain: 2

G0 = S 21

• For lossy networks, we use the insertion loss (inverse of G0):

2
IL[dB] = -10 log S 21 = -20 log | S 21 |

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4.4 Scattering Parameters

4.4.2 Meaning of S-parameters:
• If we reverse the measurement procedure and attach a generator
voltage VG2 to port 2 and properly terminate port 1:
Case 2: Measurement of S22 and S12:

• For this case we have to ensure that on the input side, the line
impedance Z0 is matched for a1=0 to be enforced:
Z - Z0
S 22 = G out = out
Z out + Z 0
2
• The reverse power gain: G0 = S12

Ex. 4.7: T-network attenuator elements

Find the S-parameters for the 3 dB attenuator shown below assuming
that the network is placed into a TL section with a characteristic
impedance of Z0=50 Ω

An attenuator must be matched to the line impedance at the input and

output ports è S11=0 and S22=0

For a 3 dB attenuator (power is divided by half), we require:

1
S 21 = = 0.707 = S12
2

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Ex. 4.7: T-network attenuator elements

The corresponding circuit for the S11 and S21 measurements is:

The corresponding circuit for S22 and S12 measurements is:

Ex. 4.7: T-network attenuator elements

S11=0 è
Z in - Z 0
S11 = Gin = = 0 ® Z in = Z 0 = 50W
Z in + Z 0
R3 ( R2 + 50W)
Z in = R1 + = 50W
( R3 + R2 + 50W )

S22=0 è
Z out - Z 0
S 22 = G out = = 0 ® Z out = Z 0 = 50W
Z out + Z 0
R3 ( R1 + 50W)
Z out = R2 + = 50W
( R3 + R1 + 50W )

R1 = R2

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4.4 Scattering Parameters

4.4.4 Conversion between Z- and S-Parameters:
• [S] & [Z] matrices are related by:

[S ] = ([Z ] + [U ])-1 ([Z ] - [U ])

é1 0 0 0ù
Where: ê0 1 # is the identity matrix
" úú
[U ] = ê
ê" # 1 "ú
ê ú
ë0 ! ! 1û

4.4 Scattering Parameters

S11 = forward reflection coefficient (input match)

S22 = reverse reflection coefficient (output match)
S21 = forward transmission coefficient (gain or loss)
S12 = reverse transmission coefficient (isolation)

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4.4 Scattering Parameters

4.4.6 Generalization of S-Parameters:
• Practical measurements involve the determination of the network S-
parameter through transmission lines of finite length

In this case, the measurement planes are shifted away from the
actual network as depicted below:

4.4 Scattering Parameters

4.4.6 Generalization of S-Parameters:

Vin+ ( z1 = -l1 ) = V1+ e - j b1 ( - l1 ) +

Vout ( z2 = -l2 ) = V2+ e - j b1 ( - l2 )
Vin- ( z1 = -l1 ) = V1- e j b1 ( - l1 ) -
Vout ( z2 = -l2 ) = V2- e j b1 ( - l2 )

é Vin+ ( -l1 ) ù ée j b1l1 0 ù éV1+ ù é Vin- ( -l1 ) ù ée - j b1l1 0 ù éV1- ù

ê + ú=ê úê ú ê - ú=ê úê ú
V ( -l
ë out 2 û ë 0 ) e j b2l2 û ëV2+ û ëVout ( -l2 ) û ë 0 e - j b2l2 û ëV2- û

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4.4 Scattering Parameters

4.4.6 Generalization of S-Parameters:

é Vin+ ( -l1 ) ù ée j b1l1 0 ù éV1+ ù é Vin- ( -l1 ) ù ée - j b1l1 0 ù éV1- ù

ê + ú=ê úê ú ê - ú=ê úê ú
ëVout ( -l2 ) û ë 0 e j b2l2 û ëV2+ û ëVout ( -l2 ) û ë 0 e - j b2l2 û ëV2- û

éV1- ù é S11 S12 ù éV1+ ù

ê -ú = ê úê +ú
ëV2 û ë S21 S22 û ëV2 û

4.4 Scattering Parameters

4.4.6 Generalization of S-Parameters:

é Vin- ( -l1 ) ù ée - j b1l1 0 ù é S11 S12 ù ée - j b1l1 0 ù é Vin+ ( -l1 ) ù

ê - ú=ê - j b 2l2 ú ê ê úê + ú
ëVout ( -l2 ) û ë 0 e û ë S 21 S 22 úû ë 0 e - j b2l2 û ëVout ( -l2 ) û

é S11e - j 2 b1l1 S12 e - j ( b1l1 + b2l2 ) ù

[S ]
SHIFT
=ê - j ( b1l1 + b 2l2 ) ú
ë S 21e S 22 e - j 2 b2l2 û

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Transistor S-parameters

Transistor S-parameters

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4.4 Scattering Parameters

• For most two port networks (b1 ¹ 0, a2 ¹ 0 ) è

S12 S 21GL
GIN = S11 +
1 - S 22GL
S12 S 21Gs
GOUT = S 22 +
1 - S11Gs

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Practically Speaking: Resistive Attenuator

Practically Speaking: Resistive Attenuator

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