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1N4001-G Thru. 1N4007-G: General Purpose Silicon Rectifiers

This document summarizes the specifications and characteristics of 1N4001-G through 1N4007-G general purpose silicon rectifiers. The rectifiers have voltage ratings from 50 to 1000V, current ratings of 1A, and feature fast switching, low leakage, and high surge capabilities. They are housed in plastic packages with axial leads and are RoHS compliant. Electrical characteristics including voltage, current, temperature ranges and more are provided in a table. Performance curves for forward current derating and surge current are also included.
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0% found this document useful (0 votes)
47 views2 pages

1N4001-G Thru. 1N4007-G: General Purpose Silicon Rectifiers

This document summarizes the specifications and characteristics of 1N4001-G through 1N4007-G general purpose silicon rectifiers. The rectifiers have voltage ratings from 50 to 1000V, current ratings of 1A, and feature fast switching, low leakage, and high surge capabilities. They are housed in plastic packages with axial leads and are RoHS compliant. Electrical characteristics including voltage, current, temperature ranges and more are provided in a table. Performance curves for forward current derating and surge current are also included.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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General Purpose Silicon Rectifiers

1N4001-G Thru. 1N4007-G


Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Features
DO-41
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability. 1.0(25.40) Min.

O
-High soldering temperature guarantee: 260 C/10
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension. 0.205(5.20)
0.160(4.20)

Mechanical data
0.107(2.70)
0.080(2.00)
-Case: transfer molded plastic, DO-41
1.0(25.40) Min.
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD- 0.034(0.90)
202E, method 208C 0.028(0.70)

-Mounting position: Any


Dimensions in inches and (millimeter)
-Weight: 0.012ounce, 0.33 grams

Electrical Characteristics (at TA=25°C unless otherwise noted)


Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.

Parameter 1N4001 1N4002 1N4003 1N 4004 1N4005 1N4006 1N4007


Symbol -G -G -G -G -G -G -G Unit

Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V

Maximum Average Forward Rectified Current


O I(AV) 1.0 A
0.375"(9.5mm) Lead Length @TA=55 C

Peak Forward Surge Current,


8.3mS single half sine-wave superimposed on IFSM 30 A
rated load (JEDEC method)

Maximum Instantaneous Forward Voltage @1.0A VF 1.1 V

Maximum DC Reverse Current at Rated TA=25 OC 5.0


IR μA
DC Blocking voltage per element TA=100 OC 50
Maximum Full Load Reverse Current,full cycle
IR(AV) 30 μA
average 0.375”(9.5mm)lead length at TL=75 OC

Typical Junction Capacitance (Note 1) CJ 15 PF

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Typical Thermal Resistance (Note 2) RθJA 60 C/W
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Operating Temperature Range TJ -55 ~ +150 C
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Storage Ttemperature Range TSTG -55 ~ +150 C

NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm2copper pads to each terminal.

REV:A
QW-BG013 Page 1
Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( 1N4001 -G Thru. 1N4007-G )

Fig.1 Typical Forward Current Fig.2 Maximum. Non-Repetitive Peak


Derating Curve Forward Surge Current
1.2 35
8.3mS, single half

ΙFSM, Peak Forward Surge Current (A)


sine-wave, JEDEC
I(AV), Average Forward Current (A)

method.
1.0 30 TJ=TJmax

25
0.8

20
0.6
15

0.4
10
Single phase
0.2 Half wave, 60Hz
Resistive or 5
inductive load

0 0
0 25 50 75 100 125 150 175 1 2 5 10 20 50 100
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TA, Ambient Temperature ( C) Number of Cycles at 60Hz

Fig.3 Typical Instantaneous Forward Fig.4 Typical Reverse Characteristics


Characteristics
10 10
IR, Instantaneous Reverse Current (mA)

TJ=100 OC
IF, Instantaneous Forward Current (A)

1.0 1.0

0.1 0.1

Pulse width=300μs. TJ=25 OC


1% duty cycle
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TJ=25 C

0.01 0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140
VF, Instantaneous Forward Voltage (V) Percent of Peak Reverse Voltage (%)

Fig.5 Typical Junction Capacitance

100

f=1MHz
O
TJ=25 C
CJ, Capacitance (pF)

10

10
0.1 1 10 100

VR, Reverse Voltage (V)

REV:A
QW-BG013 Page 2
Comchip Technology CO., LTD.

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