General Purpose Silicon Rectifiers
1N4001-G Thru. 1N4007-G
Voltage: 50 to 1000 V
Current: 1.0 A
RoHS Device
Features
DO-41
-Low cost construction.
-Fast forward voltage drop.
-Low reverse leakage.
-High forward surge current capability. 1.0(25.40) Min.
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-High soldering temperature guarantee: 260 C/10
seconds, 0.375”(9.5mm) lead length at 5lbs(2.3kg)
tension. 0.205(5.20)
0.160(4.20)
Mechanical data
0.107(2.70)
0.080(2.00)
-Case: transfer molded plastic, DO-41
1.0(25.40) Min.
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Indicated by cathode band
-Lead: Plated axial lead, solderable per MIL-STD- 0.034(0.90)
202E, method 208C 0.028(0.70)
-Mounting position: Any
Dimensions in inches and (millimeter)
-Weight: 0.012ounce, 0.33 grams
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter 1N4001 1N4002 1N4003 1N 4004 1N4005 1N4006 1N4007
Symbol -G -G -G -G -G -G -G Unit
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
O I(AV) 1.0 A
0.375"(9.5mm) Lead Length @TA=55 C
Peak Forward Surge Current,
8.3mS single half sine-wave superimposed on IFSM 30 A
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage @1.0A VF 1.1 V
Maximum DC Reverse Current at Rated TA=25 OC 5.0
IR μA
DC Blocking voltage per element TA=100 OC 50
Maximum Full Load Reverse Current,full cycle
IR(AV) 30 μA
average 0.375”(9.5mm)lead length at TL=75 OC
Typical Junction Capacitance (Note 1) CJ 15 PF
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Typical Thermal Resistance (Note 2) RθJA 60 C/W
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Operating Temperature Range TJ -55 ~ +150 C
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Storage Ttemperature Range TSTG -55 ~ +150 C
NOTES:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm2copper pads to each terminal.
REV:A
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Comchip Technology CO., LTD.
General Purpose Silicon Rectifiers
Rating and Characteristic Curves ( 1N4001 -G Thru. 1N4007-G )
Fig.1 Typical Forward Current Fig.2 Maximum. Non-Repetitive Peak
Derating Curve Forward Surge Current
1.2 35
8.3mS, single half
ΙFSM, Peak Forward Surge Current (A)
sine-wave, JEDEC
I(AV), Average Forward Current (A)
method.
1.0 30 TJ=TJmax
25
0.8
20
0.6
15
0.4
10
Single phase
0.2 Half wave, 60Hz
Resistive or 5
inductive load
0 0
0 25 50 75 100 125 150 175 1 2 5 10 20 50 100
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TA, Ambient Temperature ( C) Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward Fig.4 Typical Reverse Characteristics
Characteristics
10 10
IR, Instantaneous Reverse Current (mA)
TJ=100 OC
IF, Instantaneous Forward Current (A)
1.0 1.0
0.1 0.1
Pulse width=300μs. TJ=25 OC
1% duty cycle
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TJ=25 C
0.01 0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140
VF, Instantaneous Forward Voltage (V) Percent of Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
100
f=1MHz
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TJ=25 C
CJ, Capacitance (pF)
10
10
0.1 1 10 100
VR, Reverse Voltage (V)
REV:A
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Comchip Technology CO., LTD.