ELECTRONIC DEVICES LAB

MANUAL Name: ……………………………….. Roll

No.: …………… Semester: I Branch: EC

Code: SEC4051

DEPARTMENT OF ELECTRONICS AND COMMUNICATION

 INDEX
Sl. No. Name of the Experiment Page
No.
V - I CHARACTERISTICS OF PN JUNCTION DIODE
1

2 V - I CHARACTERISTICS OF ZENER DIODE

3 CHARACTERISTICS OF TRANSISTOR UNDER COMMON

EMITTER CONFIGURATION
4

5
Expt.No: 2
Date: V - I CHARACTERISTICS OF PN JUNCTION DIODE

AIM: To plot the VI characteristics of a PN junction diode in both forward and reverse biased condition

APPARATUS REQUIRED –

Sl.No. Description Range / Number/ Value Qty

1 Regulated Power supply (0-30) V 1
2 Diode 1N4007 1
3 DC Ammeters (0-50) mA, (0-250) μA 1 of each category
4 DC Voltmeter (0-1) V, (0-30) V 1 of each category
5 Resistor 1KΩ,, 10KΩ, 1 of each category
6 Bread board and Connecting wires

THEORY:-
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode are curve
between voltage across the diode and current through the diode.
When external voltage is zero, circuit is open and the potential barrier does not allow the current to
flow. Therefore, the circuit current is zero.
When P-type (Anode is connected to +ve terminal and n- type (cathode) is connected to –ve
terminal of the supply voltage, is known as forward bias.
The potential barrier is reduced when diode is in the forward biased condition. At some forward
voltage, the potential barrier altogether eliminated and current starts flowing through the diode and also in
the circuit. The diode is said to be in ON state. The current increases with increasing forward voltage.

When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected to the –ve
terminal of the supply voltage is known as reverse bias and the potential barrier across the junction
increases. Therefore, the junction resistance becomes very high and a very small current (reverse
saturation current) flows in the circuit. The diode is said to be in OFF state. The reverse bias current is
due to minority charge carriers.

CIRCUIT DIAGRAM:-
MODEL WAVEFORM:-

PROCEDURE:-
FORWARD BIAS:-
1. Connections are made as per the circuit diagram.
2. For forward bias, the +ve is connected to the anode and –ve is connected to the cathode of the diode.
3. Switch on the power supply and increases the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the diode and voltage across the diode for
each and every step of the input voltage.
5. The readings of voltage and current are tabulated and a graph is plotted between voltage and current.

Page: 17
REVERSE BIAS:-
1. Connections are made as per the circuit diagram
2 . For reverse bias, the +ve is connected to the cathode and –ve is connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the diode voltage across the diode for each
and every step of the input voltage.
5. The readings of voltage and current are tabulated and graph is plotted between voltage and current.
OBSERVATION:-

FORWARD BIAS REVERSE BIAS:-

Forward Forward bias

Sl. No.
biasvoltage (V) current (mA) Sl. No. Reverse bias Reverse bias
1 0 0 Voltage (V) current (μA)
2 0.1 1 0 0
3 0.2 2 20 (μA)
4 0.3 3 40 (μA)
5 0.4 4 60 (μA)
6 0.5 5 80 (μA)
7 0.6 6 100 (μA)
8 0.62 7 120 (μA)
9 0.64 8 140 (μA)
10 0.66 9 160 (μA)
11 0.68 10 180 (μA)
12 0.7 11 200 (μA)
13 0.72

RESULT: The forward and reverse characteristics of the semiconductor diode has been plotted

Page: 18
Expt.No: 3
Date: V - I CHARACTERISTICS OF ZENER DIODE
AIM: - To plot the VI characteristics of a ZENER diode in both forward and reverse biased condition

APPARATUS REQUIRED –

Sl.No. Description Range / Number/ Value Qty

1 Regulated Power supply (0-30) V 1
2 Zener Diode FZ 9.1V 1.
3 DC Ammeters (0-50) mA, 1
4 DC Voltmeter (0-1) V, (0-20) V 1 of each category
5 Resistor 1KΩ 1
6 Bread board and Connecting wires

Theory:-
A zener diode is heavily doped p-n junction diode, specially made to operate in the sharp break down
voltage. A p-n junction diode normally does not conduct when reverse biased. But a zener diode is always
reverse connected i.e it is always reverse-biased. When forward biased, its Characteristics are just those of
ordinary diode. In reverse bias, if the reverse bias is increased, at a particular voltage it starts conducting
heavily. This voltage is called Break down Voltage. The zener diode is not immediately burnt just
because it has entered the breakdown region. As long as the external circuit connected to the diode limits
the diode current to less than burnt out value, the diode will not burnt out. It is mainly used in voltage
regulators.

CIRCUIT DIAGRAM:-STATIC
CHARACTERISTICS:-

PROCEDURE
-
1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the tabular
form.
4. A graph is plotted between zener current (Iz) and zener voltage
(Vz).
5. Do the above steps for reverse bias connections as shown in the circuit
diagrams.

Page: 20
MODEL WAVEFORMS

OBSERVATIONS:-
Forward bias Reverse bias

Sl.No Reverse Reverse bias

Sl.No Forward biasvoltage (V) current (mA)
Forward bias
biasvoltage 1 0 mA
current (mA)
(V) 2 1 mA
1 0 3 2 mA
2 0.1 4 3 mA
3 0.2 5 4 mA
4 0.3 6 5 mA
5 0.4 7 6 mA
6 0.5 8 7 mA
7 0.6 9 8 mA
8 0.7 10 9 mA
9 0.72 11 10 mA
10 0.74 12 11 mA
11 0.76 13 12 mA
12 0.78 14 13 mA
15 14 mA
16 15 mA

RESULT: The forward and reverse characteristics of the zener diode have been plotted.
Expt.No:5
Date: CHARACTERISTICS OF TRANSISTOR UNDER COMMON EMITTER
CONFIGURATION

AIM: To determine the input & output characteristics of the transistor when operated on common
emitter configuration.
APPARATUSREQUIRED :
Sl. No. Description Range / Number/ Value Qty
1 Regulated Power supply (0-30) V 2
2 Transistor BC 107 1
3 DC Ammeters (0-50) mA, (0-250) μA 1 of each category
4 DC Voltmeter (0-50) V 1
5 FET Voltmeter (0-1.5) V 1
6 Resistor 1KΩ, 100KΩ Each one
7 Bread board and Connecting wires
THEORY
:
A transistor is a three terminal device. The terminals are emitter, base, collector. In common emitter
configuration, input voltage is applied between base and emitter terminals and output is taken across the
collector and emitter terminals. Therefore the emitter terminal is common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is expected since the Base-
Emitter junction of the transistor is forward biased. As compared to CB arrangement IB increases less
rapidly with VBE . Therefore input resistance of CE circuit is higher than that of CB circuit. The output
characteristics are drawn between Ic and VCE at constant IB. the collector current varies with VCE unto
few volts only. After this the collector current becomes almost constant, and independent of VCE. The
value of VCE up to which the collector current changes with V CE is known as Knee voltage. The transistor
always operated in the region above Knee voltage, IC is always constant and is approximately
equal to IB.The current amplification factor of CE configuration is given by β = ΔIC/ΔIB
CIRCUIT
DIAGRAM:
PROCEDURE:
INPUT CHARECTERSTICS:
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 0V and for
different values of VBE and IB are noted down.
3. Repeat the above step by keeping VCE at 2V and 4V.
4. Tabulate all the readings.
5. Plot the graph between VBE and IB for constant VCE
OUTPUT CHARACTERSTICS:
1. Connect the circuit as per the circuit diagram
2. For plotting the output characteristics the input current IB is kept constant at 10μA and for
different values of VCE and IC are noted down.
3. Repeat the above step by keeping IB at 30μAand 30 μA.
4. Tabulate the all the readings
5. Plot the graph between VCE and IC for constant IB
MODEL GRAPHS:
INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

OBSERVATIONS:
INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

VCE=0V VCE=1V IB = 10μA IB = 20 μA

S.No S.No
VBE(V) IB (μA) VEB(V) IB (μA) VCE(V) IC(mA) VCE(V) IC(mA)
1 0 0 μA 0 0 μA 1 0V 0 0V 0
2 25 μA 25 μA 2 2V 2V
3 50 μA 50 μA 3 3V 3V
4 75 μA 75 μA 4 4V 4V
5 100 μA 100 μA 5 5V 5V
6 125μA 125μA 6 6V 6V
7 150 μA 150 μA 7 7V 7V
8 175μA 175μA 8 8V 8V
9 200 μA 200 μA 9 9V 9V
10 225μA 225μA 10 10 V 10 V
11 250 μA 250 μA 11 11 V 11 V
Page: 27
RESULT: The input and output characteristics of transistor under common emitter configuration
has been plotted.

Page: 28