PD - 94799

IRGB30B60K
IRGS30B60K
INSULATED GATE BIPOLAR TRANSISTOR IRGSL30B60K
C VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
IC = 50A, TC=100°C
• 10µs Short Circuit Capability. at TJ=175°C
• Square RBSOA. G
tsc > 10µs, TJ=150°C
• Positive VCE (on) Temperature Coefficient.
E
• Maximum Junction Temperature rated at 175°C. VCE(on) typ. = 1.95V
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

TO-220AB D2 Pak TO-262

IRGB30B60K IRGS30B60K IRGSL30B60K

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 78 g
IC @ TC = 100°C Continuous Collector Current 50 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 120
ILM Clamped Inductive Load current c 120
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximum Power Dissipation 370 W
PD @ TC = 100°C Maximum Power Dissipation 180
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal / Mechanical Characteristics

Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 0.41 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount d ––– ––– 62
RθJA Junction-to-Ambient (PCB Mount, Steady State) e ––– ––– 40
Wt Weight ––– 1.44 ––– g
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 IRGB/S/SL30B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.95 2.35 IC = 30A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Voltage — 2.40 2.75 V IC = 30A, VGE = 15V, TJ = 150°C 8,9,10
— 2.6 2.95 IC = 30A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 8,9,10
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C) 11
gfe Forward Transconductance — 18 — S VCE = 50V, IC = 50A, PW = 80µs
— 5.0 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current — 1000 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 1830 3000 VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

Qg Total Gate Charge (turn-on) — 102 153 IC = 30A 17

Qge Gate-to-Emitter Charge (turn-on) — 14 21 nC VCC = 400V CT1
Qgc Gate-to-Collector Charge (turn-on) — 44 66 VGE = 15V
Eon Turn-On Switching Loss — 350 620 IC = 30A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 825 955 µJ VGE = 15V, RG = 10Ω, L = 200µH
Etot Total Switching Loss — 1175 1575 TJ = 25°C f
td(on) Turn-On delay time — 46 60 IC = 30A, VCC = 400V
tr Rise time — 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH CT4
td(off) Turn-Off delay time — 185 200 TJ = 25°C
tf Fall time — 31 40
Eon Turn-On Switching Loss — 635 1085 IC = 30A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 1150 1350 µJ VGE = 15V, RG = 10Ω, L = 200µH 12,14
Etot Total Switching Loss — 1785 2435 TJ = 150°C f WF1,WF2
td(on) Turn-On delay time — 46 60 IC = 30A, VCC = 400V 13,15
tr Rise time — 28 39 ns VGE = 15V, RG = 10Ω, L = 200µH CT4
td(off) Turn-Off delay time — 205 235 TJ = 150°C WF1
tf Fall time — 32 42 WF2
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 1750 2500 VGE = 0V
Coes Output Capacitance — 160 255 pF VCC = 30V 16
Cres Reverse Transfer Capacitance — 60 90 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 120A, Vp = 600V 4
VCC=500V,VGE = +15V to 0V,RG =10Ω CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 10Ω CT3
VCC=360V,VGE = +15V to 0V WF3
ISC (Peak) Peak Short Circuit Collector Current — 200 — A WF3

Note  to … are on page 13

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 IRGB/S/SL30B60K

80 400

70 350

60 300

50 250

Ptot (W)
IC (A)

40 200

30 150

20 100

10 50

0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature

1000 1000

100
10 µs 100
IC (A)

IC A)

10
100 µs
10
1 1ms
DC

0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V)
VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V

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IRGB/S/SL30B60K

60 60
VGE = 18V VGE = 18V
50 VGE = 15V 50 VGE = 15V
VGE = 12V VGE = 12V
40 VGE = 10V 40 VGE = 10V
VGE = 8.0V VGE = 8.0V

ICE (A)
ICE (A)

30 30

20 20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs

60
VGE = 18V
50 VGE = 15V
VGE = 12V
40 VGE = 10V
VGE = 8.0V
ICE (A)

30

20

10

0
0 1 2 3 4 5
VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

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 IRGB/S/SL30B60K

20 20
18 18
16 16
14 14
12 ICE = 15A 12 ICE = 15A
VCE (V)

VCE (V)
10 ICE = 30A 10 ICE = 30A
ICE = 60A ICE = 60A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 8 - Typical VCE vs. VGE Fig. 9 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C

20 250

18 T J = 25°C
16 200 T J = 150°C

14
12 ICE = 15A 150
VCE (V)

ICE (A)

10 ICE = 30A
ICE = 60A
8 100

6
4 50 T J = 150°C

2 T J = 25°C

0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typ. Transfer Characteristics

TJ = 150°C VCE = 50V; tp = 10µs

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IRGB/S/SL30B60K

3000 1000

2500

tdOFF

Swiching Time (ns)

2000
Energy (µJ)

EOFF
1500 100
EON td ON
1000
tF
500
tR

0
10
0 20 40 60 80
0 20 40 60 80
IC (A)
IC (A)

Fig. 12 - Typ. Energy Loss vs. IC Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L=200µH; VCE= 400V, TJ = 150°C; L=200µH; VCE= 400V
RG= 10Ω; VGE= 15V RG= 10Ω; VGE= 15V

3000 10000

2500
Swiching Time (ns)

2000 1000
EOFF
Energy (µJ)

tdOFF
1500 EON

1000 100
tdON
tF
500
tR

0 10
0 25 50 75 100 125 0 25 50 75 100 125

RG (Ω) RG (Ω)

Fig. 14 - Typ. Energy Loss vs. RG Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L=200µH; VCE= 400V TJ = 150°C; L=200µH; VCE= 400V
ICE= 30A; VGE= 15V ICE= 30A; VGE= 15V

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 IRGB/S/SL30B60K

10000 16

14
Cies 200V
12
400V
1000
Capacitance (pF)

10

VGE (V)
8

Coes 6
100
4

Cres 2

0
10
0 25 50 75 100 125
0 20 40 60 80 100
Q G, Total Gate Charge (nC)
VCE (V)

Fig. 16- Typ. Capacitance vs. VCE Fig. 17 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 30A; L = 600µH

10

1
Thermal Response ( Z thJC )

D = 0.50
0.1 0.20
R1 R2
0.10 R1 R2 Ri (°C/W) τi (sec)
τJ τC
0.05 τJ τ 0.200 0.000428
τ1 τ2
0.01 0.02 τ1 0.209 0.013031
τ2
0.01
Ci= τi/Ri
Ci i/Ri
0.001 Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

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IRGB/S/SL30B60K

L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT
Driver L

- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

VCC
R=
ICM

DUT VCC
Rg

Fig.C.T.5 - Resistive Load Circuit

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 IRGB/S/SL30B60K

700 35 700 70

600 30 600 60
90% ICE
500 25 500 50
tf
TEST CURRENT
400 20 400 40

VCE (V)
V CE (V)

ICE (A)
ICE (A)
300 15 300 30
5% V CE 90% test current
200 10 200 20
tr 10% test current
5% ICE 5% V CE
100 5 100 10

0 0 0 0
Eon Loss
Eoff Loss
-100 -5 -100 -10
-0.20 0.00 0.20 0.40 0.60 0.80 15.90 16.00 16.10 16.20 16.30
Time(µs) Time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4

600 300

500 250

400 ICE 200

VCE
VCE (V)

ICE (A)

300 150

200 100

100 50

0 0
-5.00 0.00 5.00 10.00 15.00
time (µS)
Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3

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IRGB/S/SL30B60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10.54 (.415) 3.78 (.149) -B-

2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
LEAD ASSIGNMENTS
15.24 (.600)
14.84 (.584) HEXFET IGBTs, CoPACK

1.15 (.045) LEAD ASSIGNMENTS

1- GATE 1- GATE
MIN 2- DRAIN1 - GATE
2- COLLECTOR
1 2 3 3- SOURCE 3- EMITTER
2 - DRAIN
4- COLLECTOR
4- DRAIN3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010 PART NUMBER

LOT CODE 1789 INTERNAT IONAL
ASS EMBLED ON WW 19, 1997 RECT IFIER
LOGO
IN THE AS S EMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
AS S EMBLY
LOT CODE WEEK 19
LINE C

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 IRGB/S/SL30B60K
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF530S WITH PART NUMBER
LOT CODE 8024 INTERNATIONAL
AS S EMBLED ON WW 02, 2000 RECTIFIER F530S
IN T HE AS SEMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEEK 02
LINE L

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IRGB/S/SL30B60K
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

TO-262 Part Marking Information

EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNATIONAL
ASS EMBLED ON WW 19, 1997
RECTIFIER
IN THE ASS EMBLY LINE "C" LOGO
DATE CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

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 IRGB/S/SL30B60K
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
‚ This is only applied to TO-220AB package.
ƒ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
„ Energy losses include "tail" and diode reverse recovery.
… Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03

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