BUB323Z

NPN Silicon Power

Darlington
High Voltage Autoprotected
D2PAK for Surface Mount
The BUB323Z is a planar, monolithic, highvoltage power http://onsemi.com
Darlington with a builtin active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as AUTOPROTECTED
Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON
Features 10 AMPERES
Integrated HighVoltage Active Clamp 360450 VOLTS CLAMP
Tight Clamping Voltage Window (350 V to 450 V) Guaranteed 150 WATTS
Over the 40C to +125C Temperature Range
Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
360 V
Specified Over Full Temperature Range CLAMP
Design Guarantees Operation in SOA at All Times
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant MARKING
DIAGRAM
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Sustaining Voltage VCEO 350 Vdc
BUB323ZG
CollectorEmitter Voltage VEBO 6.0 Vdc AYWW
Collector Current Continuous IC 10 Adc D2PAK
Peak ICM 20 CASE 418B
Base Current Continuous IB 3.0 Adc STYLE 1
Peak IBM 6.0
Total Power Dissipation PD BUB323Z = Specific Device Code
@ TC = 25_C 150 W A = Assembly Location
Derate above 25_C 1.0 Y = Year
W/_C
WW = Work Week
Operating and Storage Junction TJ, Tstg 65 to _C G = PbFree Package
Temperature Range +175

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit ORDERING INFORMATION
See detailed ordering and shipping information in the package
Thermal Resistance, JunctiontoCase RqJC 1.0 _C/W
dimensions section on page 6 of this data sheet.
Thermal Resistance, JunctiontoAmbient RqJA 62.5 _C/W
Maximum Lead Temperature TL 260 _C
for Soldering Purposes,
1/8 in from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

September, 2014 Rev. 2 BUB323Z/D
 BUB323Z

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 1)
CollectorEmitter Clamping Voltage (IC = 7.0 A) VCLAMP 350 450 Vdc
(TC = 40C to +125C)
CollectorEmitter Cutoff Current ICEO 100 mAdc
(VCE = 200 V, IB = 0)
EmitterBase Leakage Current IEBO 50 mAdc
(VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)
BaseEmitter Saturation Voltage VBE(sat) Vdc
(IC = 8.0 Adc, IB = 100 mAdc) 2.2
(IC = 10 Adc, IB = 0.25 Adc) 2.5
CollectorEmitter Saturation Voltage VCE(sat) Vdc
(IC = 7.0 Adc, IB = 70 mAdc) 1.6
(TC = 125C) 1.8
(IC = 8.0 Adc, IB = 0.1 Adc) 1.8
(TC = 125C) 2.1
(IC = 10 Adc, IB = 0.25 Adc) 1.7
BaseEmitter On Voltage VBE(on) Vdc
(IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = 40C to +125C) 1.1 2.1
(IC = 8.0 Adc, VCE = 2.0 Vdc) 1.3 2.3
Diode Forward Voltage Drop VF 2.5 Vdc
(IF = 10 Adc)
DC Current Gain hFE
(IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = 40C to +125C) 150
(IC = 5.0 Adc, VCE = 4.6 Vdc) 500 3400

DYNAMIC CHARACTERISTICS
Current Gain Bandwidth fT 2.0 MHz
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance Cob 200 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cib 550 pF
(VEB = 6.0 V)

CLAMPING ENERGY (See Notes)

Repetitive NonDestructive Energy Dissipated at turnoff: WCLAMP 200 mJ
(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time tfi 625 ns
(IC = 6.5 A, IB1 = 45 mA,
Storage Time VBE(off) = 0, RBE(off) = 0, tsi 10 30 ms
VCC = 14 V, VZ = 300 V)
Crossover Time tc 1.7 ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.

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 BUB323Z

IC
L INDUCTANCE
INOM = 6.5 A MERCURY CONTACTS (8 mH)
WETTED RELAY
IC CURRENT
Output transistor turns on: IC = 40 mA VCE SOURCE
MONITOR
(VGATE)
High Voltage Circuit turns on: IC = 20 mA

RBE = 100 W
0.1 W
Avalanche diode turns on: IC = 100 mA IC
IB CURRENT NON
VBEoff MONITOR
SOURCE INDUCTIVE
VCE
IB2 SOURCE
250 V 300 V 340 V VCLAMP NOMINAL
Icer Leakage Current = 400 V

Figure 1. IC = f(VCE) Curve Shape Figure 2. Basic Energy Test Circuit

By design, the BU323Z has a builtin avalanche diode and The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
a special high voltage driving circuit. During an the inductance, are applied according to the Device Under
autoprotect cycle, the transistor is turned on again as soon Test (DUT) specifications. VCE and IC are monitored by the
as a voltage, determined by the zener threshold and the test system while making sure the load line remains within
network, is reached. This prevents the transistor from going the limits as described in Figure 4.
into a Reverse Bias Operating limit condition. Therefore, the Note: All BU323Z ignition devices are 100% energy
device will have an extended safe operating area and will tested, per the test circuit and criteria described in Figures 2
always appear to be in FBSOA. Because of the builtin and 4, to the minimum guaranteed repetitive energy, as
zener and associated network, the IC = f(VCE) curve exhibits specified in the device parameter section. The device can
an unfamiliar shape compared to standard products as sustain this energy on a repetitive basis without degrading
shown in Figure 1. any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 W, Vgate = 280 V, L = 8.0 mH

10
300ms
IC, COLLECTOR CURRENT (AMPS)

1ms
TC = 25C
1
10ms

250ms
0.1

THERMAL LIMIT
0.01
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
0.001
10 100 340V 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Bias Safe Operating Area

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 BUB323Z

IC

ICPEAK The shaded area represents the amount of energy the de-
IC HIGH vice can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
IC LOW Figure 4a.
VCE

(a) VGATE MIN

IC

ICPEAK
IC HIGH

IC LOW
VCE

(b) VGATE MIN The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
IC
shown on Figures 4b, and 4c. This assures that hot spots and
ICPEAK uncontrolled avalanche are not being generated in the die,
IC HIGH and the transistor is not damaged, thus enabling the sustained
energy level required.

IC LOW

VCE

(c) VGATE MIN

IC

ICPEAK
IC HIGH

The transistor FAILS if its Collector/Emitter breakdown

voltage is less than the VGATE value, Figure 4d.

IC LOW

VCE

(d) VGATE MIN

Figure 4. Energy Test Criteria for BU323Z

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 BUB323Z

10000 10000

TYPICAL
TJ = 125C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

1000 1000

TYP - 6
-40C
TYP + 6

100 25C 100

VCE = 5 V, TJ = 25C
VCE = 1.5 V
10 10
100 1000 10000 100 1000 10000 100000
IC, COLLECTOR CURRENT (MILLIAMPS) IC, COLLECTOR CURRENT (MILLIAMPS)

Figure 5. DC Current Gain Figure 6. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0
2.4
4.5 TJ = 25C
IC = 3 A IC/IB = 150
2.2
4.0
2.0 TJ = 125C
3.5
1.8
3.0 5A 8A 1.6
2.5 10 A
1.4
2.0 1.2
7A
1.5 1.0
1.0 0.8 25C
0.5 0.6
0 0.4
1 10 100 0.1 1 10
IB, BASE CURRENT (MILLIAMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Collector Saturation Region Figure 8. CollectorEmitter Saturation Voltage

2.0 2.0
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)

IC/IB = 150 VCE = 2 VOLTS

1.8 1.8

1.6
1.6 TJ = 25C
1.4 TJ = 25C
1.4
1.2
1.2 125C
1.0 125C

1.0 0.8

0.8 0.6
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 9. BaseEmitter Saturation Voltage Figure 10. BaseEmitter ON Voltages

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 BUB323Z

ORDERING INFORMATION
Device Package Shipping
BUB323ZG D2PAK 50 Units / Rail
(PbFree)

BUB323ZT4G D2PAK 800 Units / Tape & Reel

(PbFree)

NJVBUB323ZT4G* D2PAK 800 Units / Tape & Reel

(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.

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 BUB323Z

PACKAGE DIMENSIONS

D2PAK 3
CASE 418B04
ISSUE K
NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
V NEW STANDARD 418B04.
B
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3 E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
T H 0.080 0.110 2.03 2.79
K J 0.018 0.025 0.46 0.64
SEATING W K 0.090 0.110 2.29 2.79
PLANE
G J L 0.052 0.072 1.32 1.83
M 0.280 0.320 7.11 8.13
H N 0.197 REF 5.00 REF
D 3 PL P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
0.13 (0.005) M T B M
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 1:
PIN 1. BASE
2. COLLECTOR
VARIABLE 3. EMITTER
CONFIGURATION 4. COLLECTOR
ZONE N P
R U
L L L

M M M

F F F

VIEW WW VIEW WW VIEW WW

1 2 3

SOLDERING FOOTPRINT*
10.49

8.38

16.155

2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 BUB323Z

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