The document contains a table of physical constants and formulae related to physics, semiconductor materials like silicon and gallium arsenide, and semiconductor devices including diodes, transistors, and MOSFETs. It provides key constants like Planck's constant, Boltzmann's constant, and mobility values for silicon. It also lists important equations for topics like carrier statistics, semiconductor doping and conductivity, PN junctions, bipolar transistors, and MOSFET operation.
The document contains a table of physical constants and formulae related to physics, semiconductor materials like silicon and gallium arsenide, and semiconductor devices including diodes, transistors, and MOSFETs. It provides key constants like Planck's constant, Boltzmann's constant, and mobility values for silicon. It also lists important equations for topics like carrier statistics, semiconductor doping and conductivity, PN junctions, bipolar transistors, and MOSFET operation.
The document contains a table of physical constants and formulae related to physics, semiconductor materials like silicon and gallium arsenide, and semiconductor devices including diodes, transistors, and MOSFETs. It provides key constants like Planck's constant, Boltzmann's constant, and mobility values for silicon. It also lists important equations for topics like carrier statistics, semiconductor doping and conductivity, PN junctions, bipolar transistors, and MOSFET operation.
The document contains a table of physical constants and formulae related to physics, semiconductor materials like silicon and gallium arsenide, and semiconductor devices including diodes, transistors, and MOSFETs. It provides key constants like Planck's constant, Boltzmann's constant, and mobility values for silicon. It also lists important equations for topics like carrier statistics, semiconductor doping and conductivity, PN junctions, bipolar transistors, and MOSFET operation.
Bolzmanns constant: k = 1.3806610-23 J/K Electron charge: q = 1.60217710-19 As Free electron mass: m0= 9.1093910-31 kg Dielectric constant of vacuum: = 8.854187817 10-12 As/Vm Dielectric constant of silicon: = 11.9 Intrinsic carrier concentration of silicon at 300K: ni= 9.65109 cm-3 Electron mobility of silicon at 300K: n=1450 cm2/Vs Hole mobility of silicon at 300K: p=505 cm2/Vs Effective mass of electrons in silicon: mn=0.26 m0 Effective mass of holes in silicon: mp=0.69 m0
Physics formulae:
Kinetic energy: 1 2 1 p2 Wk mv 2 2 m Bolzmann distribution: Fermi-Dirac distribution: 1 F ( E ) e E / kT F (E) ( E E F / kT 1 e Intrinsic charge carrier concentration: ni N C N V e EG / 2 kT 3 3
2 mn kT 2 3 2 m p kT 2 3 Si: N C 12 m N V 2 m h 2 2 h 3 3
2 mn kT 3 2 2 m p kT 2 3 GaAs: NC 2 m N V 2 m h 2 2 h Electron concentration: n N C e ( EC EF ) / kT ni e ( EF Ei ) / kT
Hole concentration: p NV e ( EF EV ) / kT ni e ( Ei EF ) / kT Mobility: Temperature dependence of mobility: 3
q c T 2 n, p (T ) (300) mn , p 300
Temperature dependence of bandgap of silicon:
(4.73 10 4 ) T 2 E g (T ) 1.17 (T 636)
Mass action law:
n p ni2
Charge neutrality: n N A p ND
Conductivity: Resistivity: Resistance:
1 L nq n pq p R A Einstein`s relation: kT Dn , p n, p q
Diode equation (p-n):
I I p In A qD p p n 0 Lp e qV / kT 1 A qDn n p 0 Ln )e qV / kT 1 I s e qV / kT 1
qD p p n 0 qDn n p 0 Is A ( ) Lp Ln Diode equation (Schottky junction): I s AA *T 2 e q Bn / kT
I I s e qV / kT 1 Diffusion length: Ln, p Dn, p n, p
Photodiode: Series resistance:
I Is e qV / kT
1 I L I I s e q (V RS I ) / kT 1 Photogenerated excess carriers:
kT N A N D 2 s Vbi V 1 1 s Vbi ln W CA q ni2 q D N N A W Transistor equations (PNP): qADB ni2 qVEB / kT I Ep I Cp e N BW
qADE n E 0 qVEB / kT qADc nC 0
I En (e 1) I Cn LE LC Minority carrier concentration in base (PNP): p n (0) p n 0 e qVEB / kT pn (W ) 0
Common base current gain (PNP):
I C 0 I E I CB0 I Cp I Ep 1 I Cp W2 0 T T 1 IE I Ep I En D N W I Ep 2 L2p 1 E B D p N E LE Common emitter current gain (PNP): 0 2 2L p I C 0 I B I CE 0 0 2 10 W Base transit time: W2 W2 PNP: B NPN: B 2D p 2 Dn Transistor equations (N-MOSFET):
Surface potential: qN AW 2 s 2 s Strong inversion:
s (inv) 2B Voltage over oxide:
Q V0 d ; Q qN AW ox Threshold voltage: qN AWm d d 2 s qN A (2B ) VT S (inv) 2B ox ox
Current-Voltage characteristics: Z ID n ox (VG VT ) VD ; VD (VG VT ) L d
