FORMAT : QP09 KCE/DEPT.
OF ECE
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
SUBJECT : ELECTRONIC DEVICES
SEMESTER : II
QUESTION BANK (EC6201)
PREPARED BY
[Link], AP/ECE
ED 1 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
EC6201 ELECTRONIC DEVICES LT
PC
3003
UNIT I- SEMICONDUCTOR DIODE
9
PN junction diode, Current equations, Diffusion and drift current densities, forward and
reverse bias characteristics, Switching Characteristics.
.
UNIT II - BIPOLAR JUNCTION
9
NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of
CE, CB, CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-
model, Multi Emitter Transistor.
UNIT III - FIELD EFFECT TRANSISTORS
9
JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation,
D-MOSFET, E-MOSFET- ,Current equation - Equivalent circuit model and its parameters,
FINFET,DUAL GATE MOSFET.
UNIT IV- SPECIAL SEMICONDUCTOR DEVICES
9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor
diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR.
UNIT V- POWER DEVICES AND DISPLAY DEVICES
9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo
transistor, Opto Coupler, Solar cell, CCD.
ED 2 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
TOTAL = 45
PERIODS
STAFF IN-CHARGE
[Link]
HOD/ECE
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
COURSE PLAN(THEORY)
Sub. Code : EC6201 Branch / Year / Sem : B.E ECE
/I/II
Sub. Name : Electronic Devices Batch :
2016-2020
Staff Name : [Link] Academic Year
COURSE OBJECTIVE
The students should be made to:
1. To introduce the basics of electronic devices.
2. To give thorough understanding of Bipolar Junction transistors.
3. To discuss about various types of Field Effect Transistors.
4. To impart knowledge on Special semiconductor devices.
5. To discuss about power devices and display devices.
TEXT BOOK:
T1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc
GrawHill Inc.2007.
REFERENCE BOOK:
R1. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory
Pearson Prentice Hall, 10th edition,July 2008.
WEB RESOURCES:
ED 3 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
W1. [Link]/fobelets/EE2p-n%20diode_Q.ppt ([Link].05)
W2. [Link] ([Link].06)
W3. [Link] ([Link].21)
W4. [Link]/elmer101/[Link] ([Link].24)
W5. [Link] ([Link].30)(NPTEL)
Topi Topic Books for Page Teaching No. of Cumulative
c No Referenc No. Methodolog Hours No. of
e y Required periods
UNIT I SEMICONDUCTOR DIODE
(9)
216-
01 PN junction diode. T1 BB 1 1
220
02 Current equations. T1 247- BB 1 2
Diffusion and drift 133-
257
T1 BB 3
03 current densities. 150 5
Forward and 275-
04 reverse bias T1 BB 2 7
characteristics. 281
Switching
05 W1 - PPT 2 9
Characteristics.
LEARNING OUTCOME
At the end of unit, students should be able to
Understand the concept of PN junction diode .
Analyze the current equations.
Derive the expression for diffusion and drift current densities.
Solve problems related to current densities.
UNIT II BIPOLAR JUNCTION
(9)
06 NPN -PNP Junctions. W2 - PPT 1 10
07 Early effect Current T1 348- BB 2 12
equations. 352
08 Input and Output R1 139- BB 1 13
characteristics of CE. 141
Input and Output 134-
09 characteristics of CB, R1 BB 1 14
136
CC.
10 Hybrid model. R1 252- BB 1 15
253
11 h-parameter model. R1 247- BB 1 16
ED 4 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
252
392-
12 Ebers Moll Model. T1 BB 1 17
394
394-
Gummel Poon- 396 BB 1 18
13 model, Multi Emitter T1
Transistor. 405-
406
LEARNING OUTCOME
At the end of unit, students should be able to
Describe the characteristics of CE,CB, & CC configuration .
State the concept of Hybrid model.
Learn the h parameter model.
Acquire knowledge on Ebers Moll Model and Gummel Poon Model.
Topi Topic Books Page Teaching No. of Cumulative
c No for No. Methodolog Hours No. of
Referen y Required periods
UNIT III ce FIELD EFFECT TRANSISTORS
(9) JFETs Drain and 549-
14 T1 BB 1 19
Transfer 553
characteristics
Current equations- 555- BB
15 Pinch off voltage and T1 2 21
566
its significance.
16 MOSFET- T1 461- BB 1 22
Characteristics. 463
443-
Threshold voltage 445
17 -Channel length T1 BB 1 23
504-
modulation.
507
D-MOSFET, 378-
18 R1 BB 1 24
E-MOSFET. 391
19 Current equation. T1 473 BB 1 25
Equivalent circuit 480-
20 model and its T1 BB 1 26
484
parameters.
FINFET, DUAL GATE
21 W3 - 1 27
MOSFET. PPT
LEARNING OUTCOME
At the end of unit, students should be able to
Understand Basic Principle of JFET & MOSFET.
Compare the D-MOSFET, E-MOSFET.
ED 5 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
Identify the concept of threshold voltage and channel length modulation.
Explain the concept of FINFET,DUAL GATE MOSFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
(9)
Metal-Semiconductor 394-
22 R1 BB 2 29
Junction- MESFET. 397
Schottky barrier 791-
23 R1 BB 1 30
diode. 794
24 Zener diode. W4 - PPT 1 31
795-
25 Varactor diode. R1 BB 1 32
798
799-
26 Tunnel diode. R1 BB 1 33
802
Gallium Arsenide 629-
27 T1 BB 1 34
device. 631
631-
28 LASER diode, LDR. T1 BB 2 36
639
Topi Topic Books Page Teaching No. of Cumulative
c No for No. Methodolog Hours No. of
Referen y Required periods
ce
LEARNING OUTCOME
At the end of unit, students should be able to
Acquire knowledge on MESFET.
Define and analyze the Schottky barrier diode.
Describe the characteristics of Zener diode, Varactor diode and Tunnel diode.
Plan the concept of LASER diode and LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES
(9)
838-
29 UJT. R1 BB 1 37
841
30 SCR W5 - NPTEL 1 38
835-
31 Diac, Triac. R1 BB 1 39
838
646-
32 Power BJT. T1 BB 1 40
654
654-
33 Power MOSFET. T1 BB 1 41
658
392-
34 DMOS-VMOS. R1 BB 1 42
393
35 LED, LCD. T1 625- BB 1 43
ED 6 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
631
Photo transistor,
36 R1 846 BB 1 44
Opto Coupler.
601-
37 Solar cell, CCD T1 BB 1 45
609
LEARNING OUTCOME
At the end of unit, students should be able to
Explain concept of power devices.
Understand Basic principle of UJT, SCR.
Describe the concept of LED,LCD.
Identify the concept of Solar cell,CCD.
COURSE OUTCOME
At the end of the course, the students will be able to
Use the basic electronic devices
Explain the theory, construction, and operation of basic electronic devices.
CONTENT BEYOND THE SYLLABUS
1. Application of JFET as voltage controlled resistor.
INTERNAL ASSESSMENT DETAILS
TEST NO. I II III MODE
L
Topic Nos. 01-09 10-21 22-37 1-37
Date
ASSIGNMENT DETAILS
ASSIGNMENT I II III
NO.
Topic Nos. 1-09 10-21 22-37
Date
B1-(Roll no.:01 to 19)- (Theory Assignments)
B2--(Roll no.:20 to 38)- (Theory Assignments)
B3--(Roll no.:39 to 58)- (Assignment-I &II- Theory Assignments &Assignment III-APH)
ED 7 KCE/ECE/QB/I YR/ED
FORMAT : QP09 KCE/DEPT. OF ECE
Batch ASSIGNMENT I (10) ASSIGNMENT II (10) ASSIGNMENT III(10)
no
B1 1. 1. Explain the theory of
1. Draw the hybrid model 1. Explain the principle
PN junction diode of transistor in CE and CB behind the varactor
and derive its diode configurations. Explain diode and list out its
application.
current equation. how h parameters
B can be determined from
the transistor
characteristics.
B2 2. Explain the 2. Draw a circuit diagram 2. Give the
characteristics of BJT for obtaining the drain and construction details of
in CC, CE, CB transfer characteristics for UJT and explain its
configuration and an N channel JFET. operation with the help
compare the of equivalent circuits.
performance of a
transistor in different
configurations.
B3 [Link] the working 3. Draw the circuit and 3. Explain the
of explain the operation and operation,
NPN transistor and characteristics of characteristics and
PNP application of SCR.
Enhancement and
transistor (APH)
Depletion mode MOSFETs.
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FORMAT : QP09 KCE/DEPT. OF ECE
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Unit I :
Unit II :
Unit III :
Unit IV :
Unit V :
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