PD - 97078A

IRFB4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
l Class-D Audio Amplifier 300W-500W
(Half-bridge)

Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100C
TJ max

250
300
38
91
175

V
V
m:
A
C

G
G

TO-220AB

Gate

Drain

Source

Description
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Max.

Parameter

Units

VGS

Gate-to-Source Voltage

30

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V

46

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V

33

IDM

Pulsed Drain Current

180

IRP @ TC = 100C

Repetitive Peak Current

PD @TC = 25C

Power Dissipation

330

PD @TC = 100C

Power Dissipation

190

Linear Derating Factor

2.2

W/C

TJ

Operating Junction and

-40 to + 175

TSTG

Storage Temperature Range

91

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance
Parameter

RJC
RCS
RJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

0.50

Max.
0.45

62

Units
C/W

Notes through are on page 8

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1
09/10/07

IRFB4229PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter

Min.

Typ. Max. Units

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

250

210

VGS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

3.0

38

46
5.0

VGS(th)/TJ
IDSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

-14

20

IGSS

Gate-to-Source Forward Leakage

1.0
100

Gate-to-Source Reverse Leakage

Forward Transconductance

83

-100

Total Gate Charge

Gate-to-Drain Charge

72
26

110

Turn-On Delay Time

Rise Time

18
31

tf
tst

Turn-Off Delay Time

Fall Time
Shoot Through Blocking Time

100

30
21

EPULSE

Energy per Pulse

790

1390

Input Capacitance

4560

Output Capacitance
Reverse Transfer Capacitance

390
100

Effective Output Capacitance

Internal Drain Inductance

290
4.5

BVDSS
VDSS/TJ
RDS(on)

gfs
Qg
Qgd
td(on)
tr
td(off)

Ciss
Coss
Crss
Coss eff.
LD

VGS = 0V, ID = 250A

V
mV/C Reference to 25C, ID = 1mA
m VGS = 10V, ID = 26A

Internal Source Inductance

7.5

VDS = VGS, ID = 250A

mV/C
A VDS = 250V, VGS = 0V
mA VDS = 250V, VGS = 0V, TJ = 125C
nA

VGS = 20V
VGS = -20V

VDS = 25V, ID = 26A

VDD = 125V, ID = 26A, VGS = 10V

nC

e

VDD = 125V, VGS = 10V

ns

ID = 26A

ns

See Fig. 22
VDD = 200V, VGS = 15V, RG= 4.7
L = 220nH, C= 0.3F, VGS = 15V

RG = 2.4

pF

VDS = 200V, RG= 4.7, TJ = 25C

L = 220nH, C= 0.3F, VGS = 15V
VDS = 200V, RG= 4.7, TJ = 100C
VGS = 0V
VDS = 25V
= 1.0MHz,
VGS = 0V, VDS = 0V to 200V
Between lead,

nH
LS

Conditions

6mm (0.25in.)
from package
and center of die contact

G
S

Avalanche Characteristics
Parameter

EAS
EAR
VDS(Avalanche)
IAS

d
Repetitive Avalanche Energy c
Repetitive Avalanche Voltagec
Avalanche Currentd
Single Pulse Avalanche Energy

Typ.

Max.

Units

130

mJ

300

33

mJ

26

Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current
ISM
VSD
trr
Qrr

(Body Diode)
Pulsed Source Current

c

Min.

Typ. Max. Units

46

Conditions
MOSFET symbol

180

(Body Diode)
Diode Forward Voltage

1.3

Reverse Recovery Time

Reverse Recovery Charge

190
840

290
1260

ns
nC

showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 26A, VGS = 0V
TJ = 25C, IF = 26A, VDD = 50V

di/dt = 100A/s

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IRFB4229PbF
1000

1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V

100

BOTTOM

10

5.5V
1
0.1

100

5.5V
10

60s PULSE WIDTH

Tj = 25C

10

BOTTOM

60s PULSE WIDTH

Tj = 175C

1
100

0.1

VDS, Drain-to-Source Voltage (V)

100

Fig 2. Typical Output Characteristics

3.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

1000

ID, Drain-to-Source Current()

10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

TJ = 175C
10

TJ = 25C

0.1

VDS = 25V
60s PULSE WIDTH

0.01
4.0

5.0

6.0

7.0

ID = 26A
VGS = 10V

3.0
2.5
2.0
1.5
1.0
0.5
0.0

8.0

-60 -40 -20

VGS, Gate-to-Source Voltage (V)

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

1600

1400

L = 220nH
C = 0.3F
100C
25C

1200

L = 220nH
C = Variable
100C
25C

1200

Energy per pulse (J)

Energy per pulse (J)

VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

800

400

1000
800
600
400
200

150

160

170

180

190

200

VDS, Drain-to -Source Voltage (V)

Fig 5. Typical EPULSE vs. Drain-to-Source Voltage

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100

110

120

130

140

150

160

170

ID, Peak Drain Current (A)

Fig 6. Typical EPULSE vs. Drain Current

IRFB4229PbF
2000

1000

L = 220nH

Energy per pulse (J)

ISD , Reverse Drain Current (A)

C= 0.3F
C= 0.2F
C= 0.1F

1600

1200

800

400

100

TJ = 175C
10

TJ = 25C
VGS = 0V

0
25

50

75

100

125

0.1

150

0.2

Temperature (C)

Fig 7. Typical EPULSE vs.Temperature

7000

VGS, Gate-to-Source Voltage (V)

C, Capacitance (pF)

20

Coss = Cds + Cgd

5000

Ciss

4000
3000

Coss

2000
1000

Crss
1

1.0

1.2

ID= 26A
VDS = 160V
VDS = 100V

16

VDS = 40V
12

10

100

1000

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

ID, Drain-to-Source Current (A)

1000

30

20

10

40

60

80

100

120

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

50

40

20

QG Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

ID, Drain Current (A)

0.8

OPERATION IN THIS AREA

LIMITED BY R DS(on)
1sec

100

100sec
10sec

10

1
Tc = 25C
Tj = 175C
Single Pulse
0.1

25

50

75

100

125

150

175

TJ , Junction Temperature (C)

Fig 11. Maximum Drain Current vs. Case Temperature

0.6

Fig 8. Typical Source-Drain Diode Forward Voltage

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

6000

0.4

VSD, Source-to-Drain Voltage (V)

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 12. Maximum Safe Operating Area

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0.40

EAS, Single Pulse Avalanche Energy (mJ)

()
RDS (on), Drain-to -Source On Resistance

IRFB4229PbF
ID = 26A
0.30

0.20

TJ = 125C

0.10

TJ = 25C

600

I D
7.4A
13A
BOTTOM 26A
TOP

500

400

300

200

100

0.00

0
5

10

25

VGS, Gate-to-Source Voltage (V)

100

125

150

175

Fig 14. Maximum Avalanche Energy Vs. Temperature

5.0

140

4.5

120

Repetitive Peak Current (A)

VGS(th) Gate threshold Voltage (V)

75

Starting TJ, Junction Temperature (C)

Fig 13. On-Resistance Vs. Gate Voltage

4.0

50

ID = 250A

3.5
3.0
2.5

ton= 1s
Duty cycle = 0.25
Half Sine Wave
Square Pulse

100

2.0

80
60
40
20

1.5

-75 -50 -25

25

50

75

100 125 150 175

25

50

75

100

125

150

175

Case Temperature (C)

TJ , Temperature ( C )

Fig 16. Typical Repetitive peak Current vs.

Case temperature

Fig 15. Threshold Voltage vs. Temperature

Thermal Response ( ZthJC )

D = 0.50
0.1

0.20
0.10
0.05

0.01

0.02
0.01

R1
R1
J
1

R2
R2

R3
R3

Ri (C/W)
C

Ci= i/Ri
Ci= i/Ri

(sec)

0.080717 0.000052
0.209555 0.001021
0.159883 0.007276

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB4229PbF
Driver Gate Drive

D.U.T

RG

***

D.U.T. ISD Waveform

Reverse
Recovery
Current

dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

V DD

**

+
-

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
ISD

Ripple 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs

V(BR)DSS
15V

D.U.T

RG
VGS
20V

DRIVER

VDS

tp

+
V
- DD

IAS
tp

0.01

I AS

Fig 19a. Unclamped Inductive Test Circuit

Fig 19b. Unclamped Inductive Waveforms

Id
Vds
Vgs

L
DUT

VCC

1K
Vgs(th)

Qgs1 Qgs2

Fig 20a. Gate Charge Test Circuit

Qgd

Qgodr

Fig 20b. Gate Charge Waveform

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IRFB4229PbF

PULSE A

RG

DRIVER
L

PULSE B

VCC
B

Ipulse

RG

tST

DUT

Fig 21b. tst Test Waveforms

Fig 21a. tst and EPULSE Test Circuit

Fig 21c. EPULSE Test Waveforms

V DS
V GS
RG

RD

VDS
90%

D.U.T.
+

-V DD

VGS
Pulse Width 1 s
Duty Factor 0.1 %

Fig 22a. Switching Time Test Circuit

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10%
VGS
td(on)

tr

t d(off)

tf

Fig 22b. Switching Time Waveforms

IRFB4229PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

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TO-220AB packages are not recommended for Surface Mount Application.

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 26A.
Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C.
Half sine wave with duty cycle = 0.25, ton=1sec.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2007

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