QRC Substrate Technology

Characterization Manual
Product Version 10.1.2 HF1
July 2011
20072011 Cadence Design Systems, Inc. All rights reserved.
Cadence Design Systems, Inc. (Cadence), 2655 Seely Ave., San Jose, CA 95134, USA.
Trademarks: Trademarks and service marks of Cadence Design Systems, Inc. contained in this document
are attributed to Cadence with the appropriate symbol. For queries regarding Cadences trademarks,
contact the corporate legal department at the address shown above or call 800.862.4522.
Restricted Permission: This publication is protected by copyright law and international treaties and
contains trade secrets and proprietary information owned by Cadence. Unauthorized reproduction or
distribution of this publication, or any portion of it, may result in civil and criminal penalties. Except as
specified in this permission statement, this publication may not be copied, reproduced, modified, published,
uploaded, posted, transmitted, or distributed in any way, without prior written permission from Cadence.
Unless otherwise agreed to by Cadence in writing, this statement grants Cadence customers permission to
print one (1) hard copy of this publication subject to the following conditions:
1. The publication may be used only in accordance with a written agreement between Cadence and its
customer.
2. The publication may not be modified in any way.
3. Any authorized copy of the publication or portion thereof must include all original copyright,
trademark, and other proprietary notices and this permission statement.
4. The information contained in this document cannot be used in the development of like products or
software, whether for internal or external use, and shall not be used for the benefit of any other party,
whether or not for consideration.
Disclaimer: Information in this publication is subject to change without notice and does not represent a
commitment on the part of Cadence. Except as may be explicitly set forth in such agreement, Cadence does
not make, and expressly disclaims, any representations or warranties as to the completeness, accuracy or
usefulness of the information contained in this document. Cadence does not warrant that use of such
information will not infringe any third party rights, nor does Cadence assume any liability for damages or
costs of any kind that may result from use of such information.
Restricted Rights: Use, duplication, or disclosure by the Government is subject to restrictions as set forth
in FAR52.227-14 and DFAR252.227-7013 et seq. or its successor
QRC Substrate Technology Characterization Manual
July 2011 3 Product Version 10.1.2 HF1
Preface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
About This Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Platforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Operating System Versions and Patches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Syntactical Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Substrate Characterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Substrate Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Technology Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Three-Dimensional Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Vertical Mesh Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Regions and Cross-Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Design Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Graphical User Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2
Getting Started. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Starting QRC TCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
QRC TCT Main Window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
File Selection Dialog Boxes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Exiting QRC TCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3
How to Use QRC TCT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Starting a Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Contents
QRC Substrate Technology Characterization Manual
July 2011 4 Product Version 10.1.2 HF1
Creating a New Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Loading an Existing Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Reverting to a Saved Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Controlling the Screen Display . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Zooming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Panning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Controlling Grid Visibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Loading the Doping Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Specifying the Profile Default Directory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Changing the Scale of the Ordinate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Controlling Doping Concentration Profile Visibility . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Controlling Legend Visibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Specifying Regions, Cross-Sections, and Interface Layers . . . . . . . . . . . . . . . . . . . . . . . 31
Specifying Region Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Specifying Cross-Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Specifying Interconnect Layer Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Specifying the Gate Layer Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Attaching Doping Profiles to Regions/Cross-Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Attaching Doping Profiles to the Default/Default Combination . . . . . . . . . . . . . . . . . . 39
Changing the Doping Profile Display Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Discretizing the Substrate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Changing the Discretization Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Starting a Discretization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Changing a Discretization Manually . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Changing Region Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Changing the Junction Parameters of a Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Calculating Junction Capacitance for Two-Dimensional Doping Profiles . . . . . . . . . . 49
Setting Interface Parameters for Interconnects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Setting Interface Parameters for Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Setting Interface Parameters for Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Creating the Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Saving a Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Exporting a Template File . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Saving the Technology Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
QRC Substrate Technology Characterization Manual
July 2011 5 Product Version 10.1.2 HF1
4
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Session Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
New Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Load Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Save Session . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Revert to Saved . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Export . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Exit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Options Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Default Directory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Discretization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
View Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Y-Axis Scale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Zoom . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Grid . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Subdivisions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Legend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Regions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Edit Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Regions Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Interface Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Subdivision Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Discretization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Move . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Add . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Delete . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Undo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Redo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Help Menu . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Icon Toolbar . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
QRC Substrate Technology Characterization Manual
July 2011 6 Product Version 10.1.2 HF1
A
Input and Output Files. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Input Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Session Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Template Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Doping Concentration Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Output Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Technology Description Files . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
B
Preparing Doping Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Regions and Cross-Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Regions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Cross-Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Information Provided by the Process Engineer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Doping Profiles Required . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
CMOS Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
BiCMOS Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Information Relevant to QRC AoT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Beginning of the Doping Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Substrate Depth Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
End of the Doping Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Doping Profile File Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Electrons and Holes Concentration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Net Carrier Concentration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Acceptor and Donor Concentration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Resistivity Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Recommendations for Creating Doping Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Substrate Depths for N-P and P-N Transitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Doping Profile Representations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Junction Representations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Doping Profile Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Start of the Doping Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Transition Region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
QRC Substrate Technology Characterization Manual
July 2011 7 Product Version 10.1.2 HF1
Final Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Glossary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
QRC Substrate Technology Characterization Manual
July 2011 8 Product Version 10.1.2 HF1
QRC Substrate Technology Characterization Manual
July 2011 9 Product Version 10.1.2 HF1
Preface
About This Book
This manual describes how to use QRC Technology Characterization Tool (TCT) to
characterize your technology and generate a technology description file to use with QRC AoT.
This manual covers the following topics:
Chapter 1, Introduction, describes QRC TCTs function, design flow, inputs, outputs,
and graphical user interface. It also provides some background information on substrate
characterization, substrate modeling, and the technology description that QRC TCT
generates.
Chapter 2, Getting Started, describes how to start and exit QRC TCT, how to use the
features of its main window, and how to use its file selection dialog boxes.
Chapter 3, How to Use QRC TCT, explains how to perform QRC TCTs main functions.
Chapter 4, Commands, describes the commands that are available in QRC TCTs
graphical user interface menus.
Appendix A, Input and Output Files, describes QRC TCTs input and output files.
Glossary defines the terms and concepts that you should understand to use QRC TCT
effectively.
Platforms
This product is supported as a 32-bit executable on all currently supported platforms. It is not
available as a 64-bit executable. Refer to the Whats New for the specific release you are
using for details of the supported platforms for that release.
Operating System Versions and Patches
For information about supported operating system versions and current patches, see the
release notes for the current release.
QRC Substrate Technology Characterization Manual
Preface
July 2011 10 Product Version 10.1.2 HF1
Syntactical Conventions
This document uses the following syntactical conventions:
Commands and parameters used on the command line are given in Courier font:
command_name
Menu commands and the fields in dialog boxes in the graphical user interface are given
in Helvetica italic font:
File Save
An en dash () separates the menu name and the command name.
Variables for which you are to substitute a value are given in Courier italic font:
filename, cellname, layer_name
File names are given in Courier font:
library.lib
Angle brackets enclose optional parameters:
<options>
Vertical bars (|) in commands indicate choices.
Square brackets indicate that you must select one of the choices:
[a|b|c]
Square brackets followed by a plus sign mean that you can choose more than one of the
choices, but you must select at least one:
[a|b|c]+
Use white space (tabs or spaces) to separate a command and its arguments.
QRC Substrate Technology Characterization Manual
July 2011 11 Product Version 10.1.2 HF1
1
Introduction
This chapter describes QRC TCTs function, design flow, inputs, outputs, and graphical user
interface. It also provides some background information on substrate characterization,
substrate modeling, and the technology description that QRC TCT generates.
Function
QRC TCT, the technology characterization tool, prepares the technology description that
QRC AoT uses to generate the substrate macromodel.
QRC TCT performs the following functions:
Defines the available doping concentration profiles, drawn layers, and interface
layers
Loads the doping profiles
Defines regions and cross-sections to identify available combinations of drawn layers
Uses doping profiles to determine the depths of the vertical discretization of the
substrate
Defines interface connection parameters for each interface layer to different
region/cross-section combinations
Defines interface connection types between the interface layers and the different
region/cross-section combinations
Computes vertical and horizontal impedance values for each subdivision of each doping
profile
Computes capacitance parameters for the p-n junctions between wells and the substrate
Saves the technology file in an encrypted format
QRC Substrate Technology Characterization Manual
Introduction
July 2011 12 Product Version 10.1.2 HF1
Substrate Characterization
Substrate characteristics throughout silicon depend directly on carrier concentration. In a
planar technology, the concentration of electrons and holes is controlled by the fabrication
process and set of mask layers:
Drawn layers, which are used to create the circuit layout, define a set of masks used in
the circuit fabrication process. Figure 1-1 on page 12 shows the top view of the layout for
NMOS and PMOS transistors in a CMOS technology, with their corresponding drawn
layer.
Figure 1-1 NMOS and PMOS Layout
Profile layers are masks that directly influence the lateral variation of the carrier
concentration across the substrate.
Interface layers are mask layers above the substrate surface that can couple to the
substrate surface resistively or capacitively. Normally, interface layers are interconnect
layers. The resistance and capacitance values between the substrate and the interface
layer are known as the layers electrical connection parameters.
Figure 1-2 on page 13 shows a cross-section of the layout through the a-a axis for a p-
substrate process, illustrating the different mask layers and identifying the interface and
profile layers.
a
a

NMOS
PMOS
metal
contact
poly
ndiff
pdiff
pwell
nwell
QRC Substrate Technology Characterization Manual
Introduction
July 2011 13 Product Version 10.1.2 HF1
Figure 1-2 Cross-Section of a Standard CMOS Process
Each combination of drawn layers produces a particular vertical carrier concentration
variation known as the vertical doping profile. For any specific process, substrate
characteristics are fully described by a number of these profiles. Refer to Appendix B,
Preparing Doping Profiles, for more information on defining these profiles.
The following process steps are those most likely to influence substrate characteristics:
Well implantation and diffusion
Field and channel stop implants
n+ and p+ implants used to contact the substrate
QRC TCT defines available profile layers, interface layers, layer combinations, and their
associated vertical doping profiles. It also divides the substrate into vertical subdivisions
computed from vertical doping profiles. QRC uses this information and the layout of the circuit
under analysis to build an RC network that models the substrate. You can connect this RC
network to the ideal circuit netlist, as Figure 1-3 on page 14 illustrates.
Doping
layers
Interface
layers
QRC Substrate Technology Characterization Manual
Introduction
July 2011 14 Product Version 10.1.2 HF1
Figure 1-3 QRC AoT Substrate Model
Substrate Model
To generate a macromodel of the substrate, the QRC AoT extractor uses a simplified
representation of the layout with a specific technology description. This flow is pictured in
Figure 1-4 on page 14.
Figure 1-4 QRC AoT Simplified Flow
The layout representation is called the substrate abstract view, which includes information
related to the generation of a surface mesh.
Layout Abstract view
Technology
Partitioning
Model construction
Mesh
QRC Substrate Technology Characterization Manual
Introduction
July 2011 15 Product Version 10.1.2 HF1
Technology Description
The doping profiles for each combination of drawn layers are constant for a particular
process. The technology description characterizes the substrate for each doping profile and
defines the vertical mesh of the initial substrate model, as illustrated in Figure 1-5 on page 15.
Figure 1-5 Three-Dimensional Substrate Model
QRC TCT saves the description in a technology description file, which includes information
such as mask layer combinations, vertical- and horizontal-specific resistances for each
vertical subdivision of the doping profiles, interface layers, interface parameters, and
interface connections. QRC TCT loads all these technology parameters to define a substrate
model and to link the access ports to external nodes.
Three-Dimensional Modeling
QRC TCT generates a three-dimensional mesh comprising a set of cells modeled as shown
in Figure 1-6 on page 16.
QRC Substrate Technology Characterization Manual
Introduction
July 2011 16 Product Version 10.1.2 HF1
Figure 1-6 Electrical Model for a Single Cell
For two such cells next to each other, the two impedances in series are joined by connection
nodes. This arrangement simplifies to a single impedance, eliminating the connection nodes.
As a result, the complete three-dimensional mesh model is a set of main nodes linked by
impedances.
Impedance is determined by the following attributes:
The doping profile
Vertical subdivision within the profile
Vertical Mesh Generation
The process of generating a discrete mesh from the continuous vertical doping profiles
involves a loss of accuracy. On one hand, the goal of vertical mesh generation is to preserve
accuracy by minimizing the total deviation from the vertical concentration profiles. On the
other hand, the mesh must be coarse enough to ensure acceptable performance.
QRC TCT produces vertical division intervals by placing boundaries at coordinates at which
the profiles greatly change, such as junctions or n+ or p+ implant depth. More subdivisions
result in a more accurate model but also increase processing time for model extraction.
After mesh generation, QRC TCT computes the specific substrate resistance within each
interval by using a piecewise constant approximation, explained in Figure 1-7 on page 17.
Connection node
Main node
Impedance
QRC Substrate Technology Characterization Manual
Introduction
July 2011 17 Product Version 10.1.2 HF1
Figure 1-7 Vertical and Horizontal Impedance Definition
Carrier concentration variation is more pronounced near the substrate surface. Beyond a
critical depth, the net carrier doping concentration can safely be assumed to be constant.
Regions and Cross-Sections
For better ease of use, QRC TCT uses regions and cross-sections.
A region is identified by vertical p-n junctions with the same vertical position. All layout areas
having the same number of transitions at the same vertical position can be characterized as
one region. Here are some examples:
A default region, which is always present and does not contain any p-n junction
A well region, such as an nwell in a p-doped substrate, which has one p-n junction
between the nwell and the substrate
A triple well region, which may contain two p-n junctions, such as a pwell placed in an
n pocket on top of the p substrate
A deep well region, which is another nwell in a p-doped substrate but resides at a vertical
depth different from the previous well region
A cross-section is a name for a generic function shared by several regions. It defines the
interface between the substrate and devices and interconnects. Examples are the following.
Default, which is always present and should be chosen to be the default cross-section
Resistance
S
u
b
s
t
r
a
t
e
Subdivision
Wafer surface
Doping profile
Backside
z (depth)
QRC Substrate Technology Characterization Manual
Introduction
July 2011 18 Product Version 10.1.2 HF1
Contact, which defines a cross-section for a substrate contact, a well contact, a triple well
contact, and so forth
Source/drain, which defines all source and drain areas in all possible regions
Combinations of regions and cross-sections are attached to resistivity profiles to enable a
one-to-one mapping.
Refer to the QRC Substrate Technology Characterization Tutorial for illustrated
examples.
Design Flow
The QRC TCT design flow is illustrated in Figure 1-8.
Figure 1-8 QRC TCT Program Flow
Technology file
Generate technology file
Discretize profiles
Load doping
profiles
Assign regions
and cross-
sections
Enter interface
parameters
Enter interface
connection types
Enter profile layers,
interface layers
QRC Substrate Technology Characterization Manual
Introduction
July 2011 19 Product Version 10.1.2 HF1
Inputs
QRC TCT accepts three inputs:
A template file, which contains all the important values that define regions, cross-
sections, and interface layers. Cadence provides the template files. Some examples
reside in $ASSURAHOME/share/sna/TCTtemplates. They are prepared for the most
common technologies and can be used as a basis for your technology. Template files are
optional. See Appendix A, Template Files,.
Note: The TCT Template files are available in the Assura installation. They are not
included with the EXT7.1 release.
Doping concentration profiles, which contain information about electron and hole
concentration, net carrier concentration, acceptor and donator concentration, and
resistivity. You can also submit doping profiles for junction capacitance calculation.
These profiles must be obtained from the fabrication process department at your site.
These files are required. See Appendix B, Preparing Doping Profiles, for more
information.
Session files, which contain the values of all variables that you set in QRC TCT to allow
you to save the configuration of the tool and any work. QRC TCT reads and writes these
optional session files. See Appendix A, Session Files,.
Outputs
QRC TCT creates the following outputs:
A technology description file in an encrypted format. See Appendix A, Technology
Description Files, for more information.
Session files, which contain the values of all variables that you set in QRC TCT.
A template file, which contains all the important values that define regions, cross-
sections, and interface layers.
Graphical User Interface
QRC TCTs graphical user interface enables you to set parameters while preparing a
technology description file. It gives you a maximum of control on all calculated or used
parameters. It controls the automatically generated subdivisions but allows you to add, move,
or delete some of those manually.
QRC Substrate Technology Characterization Manual
Introduction
July 2011 20 Product Version 10.1.2 HF1
The graphical user interface displays doping concentration profiles in several scales.
After discretization, QRC TCT displays each subdivision as well as all the doping profiles, as
shown in Figure 2-1 on page 22.
QRC Substrate Technology Characterization Manual
July 2011 21 Product Version 10.1.2 HF1
2
Getting Started
This chapter describes how to start and exit QRC TCT, how to use the features of its main
window, and how to use its file selection dialog boxes.
Starting QRC TCT
You can start QRC TCT from the UNIX command line prompt as follows:
snatct [&]
Note: The optional & starts the program in background mode.
The main window now appears.
QRC TCT Main Window
QRC TCTs main window, shown in Figure 2-1 on page 22, is designed to show the doping
concentration profiles as well as other important parameters.
QRC Substrate Technology Characterization Manual
Getting Started
July 2011 22 Product Version 10.1.2 HF1
Figure 2-1 QRC TCT Main Window
The QRC TCT main window is resizable. It is divided into the following areas:
The title banner shows the current session name and enables you to move the window.
System buttons minimize (iconize), maximize, or restore the window size.
The menu bar contains a set of pulldown menus.
The icon bar displays shortcut icons that execute the most important commands in the
menu bar. See Icon Toolbar on page 82 for a description of each individual icon.
The display panel displays doping profiles and subdivisions. You can view the results of
the discretization and manually add or remove subdivisions.
The scrollable log panel contains a log of the activities, warnings, and error messages.
Title banner
Menu bar
Icon bar
Display panel
Discretization
Log panel
Status bar
QRC Substrate Technology Characterization Manual
Getting Started
July 2011 23 Product Version 10.1.2 HF1
The status bar provides contextual information, such as the currently activated
command.
File Selection Dialog Boxes
Many QRC TCT commands activate a file selection dialog box similar to that shown in
Figure 2-2 on page 23.
Figure 2-2 File Selection Dialog Box
This dialog box contains the following fields:
Filter
Specifies a file path and matching pattern from which the contents of the Directories
and Files fields are determined. For example, if the last parameter in the path name is
*.cmd, only files ending with .cmd are displayed in the Files field. If the last parameter in
the path name is an asterisk (*), all files in the specified path are listed.
Directories
Lists the subdirectories of the path that you selected in the Filter field.
Files
QRC Substrate Technology Characterization Manual
Getting Started
July 2011 24 Product Version 10.1.2 HF1
Lists the files that match the pattern specified in the Filter field.
Selection
Displays the status of your selection process.
To use this dialog box, follow these steps:
1. To move to a directory, enter the path name of the directory in the Filter field. To list the
files that reside in that directory, specify /* after the path name.
2. To select a subdirectory, double-click on the name of the subdirectory in the Directories
field.
The Filter field now shows the new path. The Directories and Files fields are also
updated to reflect the contents of the new path.
3. To select a file, double-click on the name of the file in the Files field. Alternatively, you
can single-click to update the Selection box.
4. When you are finished with the selection process, click on OK to select what is shown in
the Selection box.
Exiting QRC TCT
To exit QRC TCT, do the following.
1. Select Session Exit.
A confirmation dialog box appears, as shown in Figure 2-3 on page 24.
Figure 2-3 Exit QRC TCT Confirmation Box
2. Click on OK to exit the tool.
QRC Substrate Technology Characterization Manual
July 2011 25 Product Version 10.1.2 HF1
3
How to Use QRC TCT
This chapter explains how to perform QRC TCTs major functions.
Starting a Session
This section shows you how to create a new session or load an existing session. It also tells
you how to revert to a previously saved session.
Creating a New Session
To clear the current database and start a new session, select Session New Session, or
click on the icon on the icon bar. Alternatively, you can press Ctrl N when the QRC TCT
main window is active. All previous operations are lost, and the QRC TCT environment is
reset. If you want to keep your current session, save it beforehand.
If the $ASSURAHOME/share/sna/TCTtemplates directory contains template files, the
template file selection window appears, as shown in Figure 3-1 on page 26. You can now load
one of the prepared sessions and adapt it to your needs.
If no template files are available, only the database is cleared, and all variables are reset.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 26 Product Version 10.1.2 HF1
Figure 3-1 Template File Selection Window
Loading an Existing Session
To load an existing QRC TCT session, follow this procedure:
1. Select Session Load Session, or click on the icon on the icon bar. Alternatively,
you can press Ctrl L when the QRC TCT main window is active.
A file selection dialog box opens, as shown in Figure 3-2 on page 27.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 27 Product Version 10.1.2 HF1
Figure 3-2 Select a Session File Dialog Box
2. Select an appropriate file, following the instructions in File Selection Dialog Boxes on
page 23.
3. Click on OK.
Reverting to a Saved Session
If you want to revert to a session that has already been savedfor example, to undo all the
changes you made in the meantimechoose Session Revert to Saved. This command
restarts the session from the point that you previously saved or loaded it.
Alternatively, you can press Ctrl R when the QRC TCT main window is active.
Controlling the Screen Display
Before you begin creating the technology file with QRC TCT, it is helpful to understand how
to zoom and pan the views that you see on-screen.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 28 Product Version 10.1.2 HF1
Zooming
Zooming is the process of magnifying or shrinking the view of a selected area of the chip. To
zoom, you can use the commands on the Zoom submenu activated by the View Zoom
command or the corresponding buttons on the icon bar.
To zoom in on, or enlarge, a selected area, select View Zoom. Press and hold the left
mouse button around the area to enlarge. When you release the button, the view is
replaced by the enlarged view. You can also use the icon.
To zoom in by a factor of 2, select View Zoom Zoom In. You can also use the Shift
Z keyboard command or the icon.
To zoom out, or shrink the view, by a factor of 2, select View Zoom Zoom Out. You
can also use the Ctrl z keyboard command or the icon.
Other zoom commands, such as zooming along the X axis, are also available. See Zoom
on page 65 for detailed information on these commands.
Panning
Panning is the process of obtaining a panoramic view of the design by selecting one point
as the center of the view without changing the scale of the design. You can pan the view to
the left, right, up, or down by half a screen.
To pan left, select View Zoom Pan Left.
You can also use the left arrow key.
To pan right, select View Zoom Pan Right.
You can also use the right arrow key.
To pan up, select View Zoom Pan Up.
You can also use the up arrow key.
To pan down, select View Zoom Pan Down.
You can also use the down arrow key.
Controlling Grid Visibility
To display or hide the grid, select View Grid. Alternatively, you can select the button
on the icon bar.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 29 Product Version 10.1.2 HF1
Loading the Doping Profiles
The first step in preparing the technology file is to load the doping concentration profiles that
will be attached to the combination of regions and cross-sections.
Specifying the Profile Default Directory
To specify the directory where QRC TCT searches for the doping profiles, follow these steps:
1. Choose Options Default Directory.
The Select a Default Directory dialog box appears, as shown in Figure 3-3 on page 29,
so you can specify the directory.
Figure 3-3 Select a Default Directory Dialog Box
2. Fill in the fields of the dialog box according to the instructions given in File Selection
Dialog Boxes on page 23.
3. Click on OK.
Changing the Scale of the Ordinate
You can change the scale of the doping concentration profiles.
To display the concentration profiles of electrons and holes on a linear scale, select View
Y-axis Scale Electrons And Holes (lin).
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 30 Product Version 10.1.2 HF1
To display the concentration profiles of electrons and holes on a logarithmic scale, select
View Y-axis Scale Electrons And Holes (log).
To display the net concentration profiles on a linear scale, select View Y-axis Scale
Net Carriers (lin). Use a plus (+) sign to indicate that electrons are the majority
carriers; use a minus (-) sign to indicate that holes are the majority carriers.
To display the net concentration profiles on a logarithmic scale, select View Y-axis
Scale Net Carriers (log). Use a plus (+) sign to indicate that electrons are the
majority carriers; use a minus (-) sign to indicate that holes are the majority carriers.
To display the resistivity profiles on a linear scale, select View Y-axis Scale
Resistivity (lin).
To display the resistivity profiles on a logarithmic scale, select View Y-axis Scale
Resistivity (log).
Alternatively, use the following two icons to change the scale:
Increases the scale and unit of the doping concentration profiles.
Decreases the scale and unit of the doping concentration profiles.
Controlling Doping Concentration Profile Visibility
By selecting View Regions, you can display or hide doping concentration profiles in
different ways. You can view all of them, you can view them by combinations of regions and
cross-sections, or you can view none of them.
Controlling Legend Visibility
You can display the legend for the doping concentration profiles either by combinations of
region and cross-section or by profile.
1. Click on View Legend to display or hide the legend. Alternatively, you can click on the
icon on the icon bar.
The Legend dialog box appears, as shown in Figure 3-4 on page 31.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 31 Product Version 10.1.2 HF1
Figure 3-4 Legend Dialog Box
2. Select Region/Cross-section or Profile.
Specifying Regions, Cross-Sections, and Interface
Layers
The next step in generating a technology description is to specify the regions, cross-sections,
and interface layers of the design.
Specifying Region Names
To specify region names, follow these steps:
1. Select Edit Setup Region Names, or click on the icon.
The Define Regions dialog box appears, as shown in Figure 3-5 on page 32.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 32 Product Version 10.1.2 HF1
Figure 3-5 Define Regions Dialog Box
2. Use the Add, Modify, and Remove buttons to change the list of regions.
To add a region to the list, do the following:
a. Click on Add.
The Create New Region dialog box appears, as shown in Figure 3-6 on page 32, so
you can specify the name of the region to add.
Figure 3-6 Create New Region Dialog Box
b. Type in the name of the region.
c. Click on OK.
To modify the name of a region in the list, do the following:
a. Highlight the name of the region that you want to change.
b. Click on Modify.
c. The Add Region Name dialog box appears, as shown in Figure 3-7 on page 33.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 33 Product Version 10.1.2 HF1
Figure 3-7 Add Region Name Dialog Box
d. Backspace over the existing name and type the name of the region that you wish to
add.
e. Click on OK.
To remove the name of a region from the list, do the following:
a. Highlight the name of the region that you want to remove.
b. Click on Remove.
3. Click on Done in the Define Regions dialog box.
You can use the Revert button to revert to the last saved list or the Cancel button to
close the window without saving.
Specifying Cross-Sections
You can use a cross-section in several regions. It has two purposes:
It serves as a unique identification of the doping concentration profile to be used under
an access port with the unique combination of region name and cross-section name.
It specifies how interconnects are connected to the substrate model: resistively,
capacitively, or not at all.
Refer to Chapter 1, Introduction, for more information about regions and cross-sections.
To specify cross-sections, do the following:
1. Select Edit Setup Cross-Sections, or select the icon.
The Cross-Sections dialog box appears, as shown in Figure 3-8 on page 34.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 34 Product Version 10.1.2 HF1
Figure 3-8 Cross-Sections Dialog Box
2. Use the Add, Modify, and Remove buttons to modify the list of cross-sections and their
properties.
To add a cross-section to the list, do the following:
a. Click on Add.
The Add Cross-Section dialog box appears, as shown in Figure 3-9 on page 34, so
you can specify the name of the cross-section to add.
Figure 3-9 Add Cross-Section Dialog Box
b. Type in the name of the cross-section.
c. In the Interface Connections field, select Resistive or Capacitive.
d. Click on OK.
To modify the name of a cross-section in the list, do the following:
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 35 Product Version 10.1.2 HF1
a. Highlight the name of the cross-section that you want to change.
b. Click on Modify.
c. The Modify Cross-Section dialog box appears, as shown in Figure 3-10 on page 35.
Figure 3-10 Modify Cross-Section Dialog Box
d. Backspace over the existing name and type the name of the cross-section that you
wish to add.
e. In the Interface Connections field, select Resistive or Capacitive.
f. Click on OK.
To remove the name of a cross-section from the list, do the following:
a. Highlight the name of the cross-section that you want to remove.
b. Click on Remove.
3. Click on Done in the Cross-Section dialog box.
4. Define the interface connections by selecting one of the following options.
Nothing selected
If you neither select Resistive nor Capacitive, a connection between an access
port and the substrate model will not be allowed for this type of cross-section.
Resistive
Enables a resistive connection between an access port and the substrate model.
Capacitive
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 36 Product Version 10.1.2 HF1
Enables a capacitive connection between an access port and the substrate model.
Choose the type of capacitive connection appropriate for this cross-section:
interConnectOnField
Selects the interconnects that connect to the substrate but that do not reside
above a region where a device is located.
interConnectOnActive
Selects the interconnects that connect to the substrate and that reside above a
region where a device is located.
gate
Selects the interconnects that connect to the substrate through the gate of MOS
transistors.
Specifying Interconnect Layer Names
Now you will specify the layer names of the interconnects in your design:
1. Select Edit Setup Interface Interconnects, or click on the icon.
The Interconnects dialog box opens, as shown in Figure 3-11 on page 36.
Figure 3-11 Interconnects Dialog Box
2. Use the Add, Modify, and Remove buttons to change the list of interconnect layers.
To add a layer name to the list, do the following:
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 37 Product Version 10.1.2 HF1
a. Click on Add.
The Create New Interconnect dialog box appears, as shown in Figure 3-12 on
page 37, so you can specify the name of the layer to add.
Figure 3-12 Create New Interconnect Dialog Box
b. Type in the name of the layer.
c. Click on OK.
To modify the name of a layer in the list, do the following:
a. Highlight the name of the layer that you want to change.
b. Click on Modify.
c. The Add Interconnect Name dialog box appears, as shown in Figure 3-13 on
page 37.
Figure 3-13 Add Interconnect Name Dialog Box
d. Backspace over the existing name and type the name of the layer that you wish to
add.
e. Click on OK.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 38 Product Version 10.1.2 HF1
To remove the name of a layer from the list, do the following:
a. Highlight the name of the layer that you want to remove.
b. Click on Remove.
3. Click on Done to effect the changes.
Specifying the Gate Layer Names
Finally, specify the layer names of the interconnects in your design serving as the gate layer:
1. Select Edit Setup Interface Gates, or click on the icon.
The Gates dialog box appears, as shown in Figure 3-14 on page 38.
Figure 3-14 Gates Dialog Box
2. Use Add, Modify, and Remove buttons to change the list of interconnect layers that
connect to gates of MOS transistors. Follow the procedure in step 2 in Specifying
Interconnect Layer Names on page 36.
3. Click on Done in the Gates dialog box to implement the changes.
Attaching Doping Profiles to Regions/Cross-Sections
The next step is to attach the doping concentration profiles given in ASCII files to the
combinations of regions and cross-sections. If you started without using one of the templates,
the first combination of region and cross-section is always composed of the default region and
the default cross-section.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 39 Product Version 10.1.2 HF1
Attaching Doping Profiles to the Default/Default Combination
First, attach doping concentration profiles to the default combination of regions and cross-
sections.
1. Select Edit Region Parameters, or click on the icon.
The Regions Parameters dialog box opens, as shown in Figure 3-15 on page 39.
Figure 3-15 Regions Parameters Dialog Box
2. In the Region Name field, choose the name of the default region.
3. Click on Cross-Sections.
The Select a Doping Profile dialog box, shown in Figure 3-16 on page 39, appears so
you can select the appropriate doping concentration profile.
Figure 3-16 Select a Doping Profile Dialog Box
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 40 Product Version 10.1.2 HF1
4. Select a doping profile, using the instructions given in File Selection Dialog Boxes on
page 23.
5. Click on OK in the Select a Doping Profile dialog box.
The doping profile attachment window now appears, as shown in Figure 3-17 on
page 40.
Figure 3-17 Doping Profile Attachment Window
6. You can change the parameters in this window by following the instructions in Changing
the Doping Profile Display Parameters on page 42.
7. Click on OK in the doping profile attachment window.
Now the cross-section selection dialog box appears, as shown in Figure 3-18 on
page 41.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 41 Product Version 10.1.2 HF1
Figure 3-18 Cross-Section Selection Dialog Box
In the title of the cross-section selection dialog box, the name of the actual region is
displayed; for example, in Figure 3-18 on page 41 the default region is shown. The dialog
box contains two sections: the Selected Cross-Sections box contains the already
selected cross-sections, and the Available Cross-Sections box contains the available
cross-sections.
8. Attach other profiles to other cross-sections for the default region:
a. In the cross-section selection dialog box, select an available cross-section in the list
at the right, and click on the left arrow.
The Select a Doping Profile dialog box shown in Figure 3-16 on page 39 opens.
b. Select a profile, and click on OK.
The Select a Doping Profile dialog box now closes, and the doping profile
attachment window shown in Figure 3-17 on page 40 opens.
c. You can change the parameters in this window by following the instructions given in
Changing the Doping Profile Display Parameters on page 42 and clicking on OK
in the doping profile attachment window.
The cross-section selection dialog box opens.
9. Repeat step 8 until all necessary cross-sections for the default region are attached to
doping profiles.
10. In the cross-section selection dialog box, click on Done.
The cross-section selection dialog box now closes but the Regions Parameters dialog
box remains open.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 42 Product Version 10.1.2 HF1
11. Attach profiles to other regions:
a. Choose a second region, for example, nwell.
b. Click on Cross-Section.
The Select a Doping Profile dialog box appears.
c. Select a profile, and click on OK.
The Select a Doping Profile dialog box closes, and the doping profile attachment
window opens.
d. You can change the parameters in this window by following the instructions given in
Changing the Doping Profile Display Parameters on page 42 and clicking on OK
in the doping profile attachment window.
The doping profile attachment window closes. The cross-section selection dialog
box opens.
12. Repeat step 11 until all necessary cross-sections for the second region are attached to
doping profiles.
13. In the cross-section selection dialog box, click on Done.
The cross-section selection dialog box now closes. The Regions Parameters dialog box
remains open.
14. Repeat steps step 11 through step 13 until all necessary region/cross-section
combinations are attached to doping profiles.
15. In the Regions Parameters dialog box, click on Done.
Changing the Doping Profile Display Parameters
Figure 3-17 on page 40 shows the doping profile attachment window. At the top, this window
contains the path to and the name of the file with the doping concentration. The displayed
graphs vary according to the format of this file; for example, in Figure 3-17 on page 40 the
doping concentration profile for the default region and the contact cross-section is given in
electrons and holes.
1. You can change the way of displaying these profiles by clicking on the following fields on
the doping profile attachment window:
Set Color
Opens a color definition window, enabling you to change the default color.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 43 Product Version 10.1.2 HF1
Line Style
Sets the line style. You can choose from solid, dot, long dashed, short dashed, or
dot dashed.
Horizontal Axis
Displays the maximum and minimum value of the depth for this doping profile.
Default
Re-enters the default values for the axis.
Redraw
Updates the screen.
Vertical Axis
Displays the profiles in linear scale or in logarithmic scale.
2. Click on OK.
Discretizing the Substrate
You can specify how the substrate will be vertically discretized. The discretization depends
on the following:
The doping concentration profiles and their slopes
The parameters set in the Options menu
The critical depth and the backside depth are important values. From surface to critical
depth, profiles exhibit much variation in carrier concentration. QRC TCT discretizes this
region in small subdivisions to achieve an accurate model. From critical depth to the backside
of the substrate, the subdivisions are coarser because the carrier concentration is assumed
to be constant in this region. QRC TCT takes the last value found in each doping profile.
Figure 3-19 on page 44 illustrates critical depth and backside depth.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 44 Product Version 10.1.2 HF1
Figure 3-19 Definition of Critical Depth and Backside Depth
Changing the Discretization Parameters
QRC TCT automatically calculates the critical depth, but you can change it manually in the
dialog box activated by the Options Discretization command. You can also use this
command to enter values for the backside depth.
1. Select Options Discretization.
The Discretization dialog box appears, as shown in Figure 3-20 on page 45.
Min depth
Critical
depth
Backside
depth
Doping profiles
0
z z
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 45 Product Version 10.1.2 HF1
Figure 3-20 Discretization Dialog Box
See Discretization on page 60 for an explanation of these fields.
2. Click on Done to set the discretization parameters.
If you have already performed a discretization or if you have changed a session containing
discretizations, QRC TCT issues a warning message to inform you that it is overwriting the
discretization parameters and therefore the discretization.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 46 Product Version 10.1.2 HF1
Starting a Discretization
To start a discretization, select Subdivision Discretization.
If all parameters are set correctly and if the doping profiles pass several verifications, the
proposed discretization is displayed in QRC TCTs display panel.
Changing a Discretization Manually
You may want to change the discretization manually. Use the commands on the Subdivision
menu.
Remember that you must weigh speed versus accuracy when deciding on the number of
subdivisions. A high number of subdivisions results in a higher level of accuracy, but QRC
TCT takes longer to extract the substrate model. A low number of subdivisions results in a
lower level of accuracy but increases the extraction speed.
Controlling Subdivision Visibility
You can display or hide the subdivisions by selecting View Subdivisions. You can only
display them if you have previously performed a discretization. Alternatively, you can click on
the icon on the icon bar.
Moving a Subdivision
To move a subdivision, follow these steps:
1. Select Subdivision Move. Alternatively, you can select Ctrl M, or click on the
icon.
2. Place the cursor on the dedicated subdivision. The cursor style changes.
3. Left-click on the subdivision, and drag it to the left or to the right. A subdivision can only
be moved between its neighbor subdivisions.
4. Exit move mode by clicking on Subdivision Move.
Adding a Subdivision
To add a subdivision, follow these steps:
1. Select Subdivision Add. Alternatively, you can select Ctrl A, or click on the
icon.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 47 Product Version 10.1.2 HF1
2. Type in the X coordinate of the new subdivision.
3. Click on OK.
The subdivision is added in QRC TCTs display panel.
Note: In cases where sufficient number of subdivisions have not been selected near the top
surface, then QRC TCT asks the user whether it should automatically insert additional sub-
divisions. This feature is designed to help ensure sufficient accuracy near the critical surface
interface.
Deleting a Subdivision
To delete a subdivision, follow these steps:
1. Select Subdivision Delete. Alternatively, you can select Ctrl D, or click on the
icon.
2. Place the cursor on the dedicated subdivision.
The cursor style changes.
3. Left-click on the subdivision to be deleted.
4. Exit delete mode by clicking on Subdivision Delete.
Some of the discretizations cannot be removed because they are necessary to maintain
accuracy.
Undoing and Redoing Changes to a Subdivision
To reverse the last changes to a subdivision, select Subdivision Undo. Alternatively, you
can select u, or click on the icon.
To re-execute the last changes to a subdivision, select Subdivision Redo. Alternatively,
you can select r, or click on the icon.
Changing Region Parameters
You can change the region parameters.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 48 Product Version 10.1.2 HF1
Changing the Junction Parameters of a Region
If a region contains p-n junctions, for example, between the n-doped well and the p-doped
substrate, QRC adds capacitors to model the junction capacitance between both sides of the
p-n junction. To change the junction parameters for a region, follow these steps. To calculate
the junction capacitance for two-dimensional doping profiles, see the next section.
1. To change a regions junction parameters, click on Edit Regions Parameters, or click
on the icon.
The Regions Parameters dialog box appears, as shown in Figure 3-21 on page 48.
Figure 3-21 Regions Parameters Dialog Box
2. In the Region Name list, select a region containing p-n junctions.
3. Click on Junction Parameters.
The Junction Parameters dialog box appears, as shown in Figure 3-22. This example
shows the Junction Parameters dialog box for an nwell with one p-n junction.
Figure 3-22 Junction Parameters Dialog Box
4. You can determine the area and perimeter capacitance values used for these capacitors
in different ways:
Calculated
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 49 Product Version 10.1.2 HF1
Automatically determines the capacitance values.
User-Defined
Enables you to define the perimeter and area capacitance values. If your region
contains several p-n junctions, several fields appear for you to enter the perimeter
and area values.
2-D Geometry
Accepts a file that is generated from a process simulator and that contains two-
dimensional doping concentration information. QRC accepts MEDICI, SUPREM,
and ISE file syntax.
5. Click on OK to change the parameters.
Calculating Junction Capacitance for Two-Dimensional Doping Profiles
The capacitance values required to model junction capacitors for the p-n junctions in the
different regions can be calculated by QRC TCT, user-defined with fixed values, or derived
from two-dimensional geometry. If you want to use two-dimensional geometry, Cadence
recommends that you read this section.
1. Click on Edit Regions Parameters.
The Regions Parameters dialog box appears, as shown in Figure 3-21 on page 48.
2. Select a region with p-n junctions in the Regions Parameters dialog box.
3. Click on Junction Parameters.
The Junction Parameters dialog box appears, as shown in Figure 3-22 on page 48.
4. Choose 2-D Geometry, and click on OK.
You are asked to provide a file with two-dimensional geometry and doping profile
information. You can generate this file with process simulators. QRC TCT supports
SUPREM and MEDICI.
5. Define a cut through the regions under consideration containing the p-n junctions. This
cut must be two-dimensional. For more details on this issue, contact Cadence Customer
Support.
Setting Interface Parameters for Interconnects
Follow this procedure to set the interface parameters for the interconnects:
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 50 Product Version 10.1.2 HF1
1. Select Edit Interface Parameters Interconnect, or click on the icon.
The Interconnect Parameters dialog box appears, as shown in Figure 3-23 on page 50.
Figure 3-23 Interconnect Parameters Dialog Box
2. Select one layer after the other from the Interconnect field, and set the appropriate
values for resistance [ohm*m
2
] and capacitance for area [fF/m
2
] and perimeter [fF/m].
3. Click on OK.
Here are some examples from a simple CMOS technology:
A metal_2 layer is never connected to contacts, so the resistance values are -1. In
contrast, there may be a capacitive connection between a metal_2 layer and the
substrate, so at least the area capacitance values should be entered. For additional
accuracy, you can use the perimeter capacitance values.
A polysilicon layer is never connected to contacts, so the resistance values are -1. In
contrast, there may be a capacitive connection between a polysilicon layer and the
substrate, so at least the area capacitance values should be entered. For additional
accuracy, you can use the perimeter capacitance values. In contrast to the metal_2 layer,
the area value for a capacitive interface on field oxide is higher, since the distance
between the polysilicon layer and the substrate is smaller than the distance between the
metal_2 layer and the substrate.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 51 Product Version 10.1.2 HF1
A metal_1 layer is the interface layer for the contacts. A 10-ohm*m
2
resistance value is
given to model the resistivity of the contact metallization. The values may be different for
n-contacts and p-contacts. There may also be a capacitive connection between a
metal_1 layer and the substrate, so at least the area capacitance values should be
entered. For additional accuracy, you can use the perimeter capacitance values.
Setting Interface Parameters for Gates
To set the interface parameters for gates, perform these steps:
1. Select Edit Interface Parameters Gate, or click on .
The Gate Parameters dialog box appears, as shown in Figure 3-24.
Figure 3-24 Gate Parameters Dialog Box
2. Select one layer after the other from the Gates field, and set appropriate values for
capacitance for area [fF/m
2
] and perimeter [fF/m].
3. Click on OK.
Setting Interface Parameters for Devices
To set the interface parameters for devices, do the following:
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 52 Product Version 10.1.2 HF1
1. Select Edit Interface Parameters Device, or click on the icon.
The Device Parameters dialog box appears, as shown in Figure 3-25 on page 52.
Figure 3-25 Device Parameters Dialog Box
By default, all devices are connected resistively to the substrate. You can change to a
capacitive connection by setting capacitance values for area [fF/m
2
] for the different
cross-sections available.
2. Select one region after the other from the Regions field, and set appropriate values for
the different cross-sections.
3. Click on OK.
Creating the Output
This section describes how to save a session, a template, and a technology description.
Saving a Session
Save your current QRC TCT session by following these steps:
1. Select Session Save Session, or click on the icon on the icon bar. Alternatively,
you can press Ctrl S when the QRC TCT main window is active.
The file selection dialog box shown in Figure 3-26 on page 53 appears so you can enter
the name of the session to save.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 53 Product Version 10.1.2 HF1
Figure 3-26 Save Session File Selection Dialog Box
The current database, including profiles path and settings, is stored in a file. You can
choose any file name and suffix, but since the default filters expect a .tct suffix, it is
recommended that you use a .tct suffix.
2. Select an appropriate file, following the instructions in File Selection Dialog Boxes on
page 23.
3. Click on OK.
Before saving a session, QRC TCT performs several tests. It may issue warning
messages, asking you to add or change something before saving. If you want to save the
setup in a template file, use the Session Export command, as described in the
Exporting a Template File on page 53.
When you save a session, QRC TCT preserves all current information, including the paths to
the doping profiles, interface parameters, options, and environment settings.
Exporting a Template File
A template file contains only the basic information about a session that can be applied to
similar sessions. For example, in the $ASSURAHOME/share/sna/TCTtemplates
directory, you will find two templates, one for a CMOS technology and the other for BiCMOS
technology. They contain the predefined regions, cross-sections, and interconnect layers that
you can use as a starting point to adapt the technology.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 54 Product Version 10.1.2 HF1
1. Select Export Setup.
The Export Setup file selection dialog box appears, as shown in Figure 3-27.
Figure 3-27 Export Setup File Selection Dialog Box
2. Follow the instructions given in File Selection Dialog Boxes on page 23 to select a file
name.
The default file name is default.tct.
3. Click on OK to save the file.
Saving the Technology Description
The final step in using QRC TCT is to generate a technology description that can be used by
QRC. The technology description file is called SCtechnology.XXX, where XXX is a user-
defined extension. You can save the technology file in an Encrypted format.
If you choose this format, you can see the global parameters such as regions and cross-
sections with a text editor, but all technological parameters are in encrypted format, which is
unreadable. You can use one of two ways to save the technology description in encrypted
format:
Select Session Export Description Encrypted.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 55 Product Version 10.1.2 HF1
Click on the button on the icon bar.
1. Using the method just described, select the output format.
A file selection dialog box opens, asking you to specify the location and the file name of
the technology description file. Usually technology description files are named
SCtechnology.XXXX, where the XXXX extension gives additional information on the
technology.
2. Select an appropriate file, following the instructions in File Selection Dialog Boxes on
page 23.
3. Move to an appropriate directory, and type in a file name, for example,
SCtechnology.bicmos.crypt.
4. Click on OK to start the export routine.
QRC Substrate Technology Characterization Manual
How to Use QRC TCT
July 2011 56 Product Version 10.1.2 HF1
QRC Substrate Technology Characterization Manual
July 2011 57 Product Version 10.1.2 HF1
4
Commands
This chapter describes the commands that are available in QRC TCTs graphical user
interface menus.
Session Menu
The Session menu is shown in Figure 4-1 on page 57.
Figure 4-1 Session Menu
New Session
The Session New Session command clears the current database and starts a new
session. If the $ASSURAHOME/share/sna/TCT templates directory contains template files,
the template file selection window shown in Figure 4-2 on page 58 appears. If no template
files are available, only the database is cleared, and all variables are reset.
QRC Substrate Technology Characterization Manual
Commands
July 2011 58 Product Version 10.1.2 HF1
Figure 4-2 Template File Selection Window
Load Session
The Session Load Session command loads an existing QRC TCT session. It activates
a file selection dialog box that enables you to select the session to load. See File Selection
Dialog Boxes on page 23 for instructions on using this dialog box.
Save Session
The Session Save Session command saves the current QRC TCT session. It activates
a file selection dialog box that enables you to select the session to save. See File Selection
Dialog Boxes on page 23 for instructions on using this dialog box.
Revert to Saved
The Session Revert to Saved command restarts a session from the point at which you
previously saved it, discarding any changes you may have made subsequently.
Export
The Session Export command saves the technology description. It activates the Export
menu, shown in Figure 4-3 on page 59.
QRC Substrate Technology Characterization Manual
Commands
July 2011 59 Product Version 10.1.2 HF1
Figure 4-3 Export Menu
Setup
The Session Export Setup command allows you save a session as a template file. It
activates a file selection dialog box so that you can select a file name for it. See File Selection
Dialog Boxes on page 23 for instructions on using this dialog box.
Description
The Session Export Description command saves the technology file in an encrypted
format.
Encrypted
The Session Export Description Encrypted command saves the technology file in
a format that enables you to see the global parameters like regions and cross-sections with
a text editor, but all technological parameters are in encrypted format, which is unreadable.
Exit
The Session Exit command exits QRC TCT. It brings up the confirmation box shown in
Figure 4-4 on page 59.
Figure 4-4 Exit QRC TCT Confirmation Box
QRC Substrate Technology Characterization Manual
Commands
July 2011 60 Product Version 10.1.2 HF1
Options Menu
Figure 4-5 on page 60 shows the Options menu.
Figure 4-5 Options Menu
Default Directory
The Options Default Directory command specifies the default directory for storing doping
profiles. It activates a file selection dialog box so you can select the name of the directory. See
File Selection Dialog Boxes on page 23 for instructions on using file selection dialog boxes
in QRC TCT.
Discretization
The Options Discretization command enables you to change the discretization
parameters. It activates the Discretization dialog box, shown in Figure 4-6 on page 61.
QRC Substrate Technology Characterization Manual
Commands
July 2011 61 Product Version 10.1.2 HF1
Figure 4-6 Discretization Dialog Box
The Discretization dialog box contains the following fields:
Backside Depth
Changes the depth of the backside, that is, the thickness of the die. It is given in microns.
Temperature
Specifies the operation temperature, in degrees Celsius or Kelvin.
QRC Substrate Technology Characterization Manual
Commands
July 2011 62 Product Version 10.1.2 HF1
Mobility tuning
The mobility tuning factor takes into consideration any changes in mobility in the process
to ensure that the doping information is translated into accurate resistivity information.
There are separate tuning commands for electrons and holes
Mobility tuning for holes
This command specifies a tuning factor for holes to allow you to tune the internal
calculation of resistivity of the Substrate technology file.
Mobility tuning for electrons
This command specifies a separate tuning factor for electrons to allow you to tune
the internal calculation of resistivity of the Substrate technology file.
Tuning for junction capacitors
Specify a positive value which acts as a linear scaling factor, or tuning factor, for junction
capacitors extracted during substrate extraction in the QRC AoT flow. The default value
is 1.0.
Number of Subdivisions
Defines the number of subdivisions above and below the critical depth. The critical depth
is the distance from the surface of the substrate to the border of the homogenous doping
concentration.
Sampling
Samples the doping concentration profiles to define several substrate layers. You can
define the sampling in either of two ways:
Step
Samples the doping profiles with a constant step width. The units are given in
microns.
Sample
Samples the doping profiles with a certain number of samples.
Transition Tolerance
Specifies the tolerance to use for p-n transitions in the doping profiles. The doping
profiles must show the transition between areas dominated by electrons and areas
dominated by holes at the same vertical depth. Sometimes doping concentration profiles
derived from measurements do not lead to a sufficient overlap of the transitions because
QRC Substrate Technology Characterization Manual
Commands
July 2011 63 Product Version 10.1.2 HF1
of measurement deviations. This parameter allows you to set some tolerance in the
transition, in microns.
Compress
Specifies where the subdivisions are concentrated. This compression factor influences
the calculation of the subdivisions. A value less than 1 concentrates the subdivisions in
the vicinity of the p-n transition. A value greater than 1 concentrates the subdivisions at
the surface of the substrate.
Maximum Junction Potential Drop
Sets the maximum allowable potential drop over any p-n transition.
Defaults
Sets the default values for all the fields. However, the defaults may not be appropriate for
your technology.
Apply
Saves the current values to the database without closing the window.
Done
Saves the current values to the database and closes the Discretization dialog box.
View Menu
The View menu is shown in Figure 4-7 on page 63.
Figure 4-7 View Menu
QRC Substrate Technology Characterization Manual
Commands
July 2011 64 Product Version 10.1.2 HF1
Y-Axis Scale
The View Y-Axis Scale command enables you to change the scale of the doping
concentration profiles by changing the scale and unit of the ordinate in the display panel.
Electrons And Holes (lin)
The View Y-Axis Scale Electrons And Holes (lin) command displays the
concentration profiles of electrons and holes on a linear scale.
Electrons And Holes (log)
The View Y-Axis Scale Electrons And Holes (log) command displays the
concentration profiles of electrons and holes on a logarithmic scale.
Net Carriers (lin)
The View Y-Axis Scale Net Carriers (lin) command displays the net concentration
profiles on a linear scale. A plus (+) sign indicates that electrons are the majority carriers; a
minus (-) sign indicates that holes are the majority carriers.
Net Carriers (log)
The View Y-Axis Scale Net Carriers (log) command displays the net concentration
profiles on a logarithmic scale. A plus (+) sign indicates that electrons are the majority
carriers; a minus (-) sign indicates that holes are the majority carriers.
Resistivity (lin)
The View Y-Axis Scale Resistivity (lin) command displays the resistivity profiles on a
linear scale.
Resistivity (log)
The View Y-Axis Scale Resistivity (log) command displays the resistivity profiles on a
logarithmic scale.
QRC Substrate Technology Characterization Manual
Commands
July 2011 65 Product Version 10.1.2 HF1
Zoom
The View Zoom command enables you to zoom and pan. It activates the Zoom menu,
shown in Figure 4-8 on page 65.
Figure 4-8 Zoom Menu
Zoom
The View Zoom Zoom command enlarges a selected area. After you select the Zoom
command, press and hold the left mouse button around the area to enlarge. When you
release the button, the view is replaced by the enlarged view. You can also use the icon.
Zoom In
The View Zoom Zoom In command zooms in by a factor of 2. You can also use the
Shift Z keyboard command or the icon.
QRC Substrate Technology Characterization Manual
Commands
July 2011 66 Product Version 10.1.2 HF1
Zoom Out
The View Zoom Zoom Out command zooms out by a factor of 2. You can also use the
Ctrl z keyboard command or the icon.
Zoom In x Axis
The View Zoom Zoom In x Axis command zooms in on the values along the X axis by
a factor of 2.
Zoom Out x Axis
The View Zoom Zoom Out x Axis command zooms out from the values along the X
axis by a factor of 2.
Zoom In y Axis
The View Zoom Zoom In y Axis command zooms in on the values along the Y axis by
a factor of 2.
Zoom Out y Axis
The View Zoom Zoom Out y Axis command zooms out from the values along the Y
axis by a factor of 2.
Previous Zoom
The View Zoom Previous Zoom command returns to the previously zoomed view.
When you zoom in and out, QRC TCT stores the minimum and maximum X and Y values.
This command returns to the view defined by the previous configuration of these values.
Next Zoom
The View Zoom Next Zoom command displays the next view in a sequence of views.
For example, if you zoom three views, then return to view 1, the Next Zoom command
displays view 2.
QRC Substrate Technology Characterization Manual
Commands
July 2011 67 Product Version 10.1.2 HF1
Full Screen
The View Zoom Full Screen command displays all of the contents of the main window.
Pan Left
The View Zoom Pan Left command pans the view left.
Pan Right
The View Zoom Pan Right command pans the view right.
Pan Up
The View Zoom Pan Up command pans the view up.
Pan Down
The View Zoom Pan Down command pans the view down.
Grid
The View Grid command controls the visibility of the grid.
Subdivisions
The View Subdivisions command controls the visibility of the subdivisions. You can only
display them if you have previously performed a discretization.
Legend
The View Legend command controls the visibility of the legend. It activates the Legend
dialog box, shown in Figure 4-9 on page 68.
QRC Substrate Technology Characterization Manual
Commands
July 2011 68 Product Version 10.1.2 HF1
Figure 4-9 Legend Dialog Box
The Legend dialog box contains the following fields:
Region/Cross-section
Displays the legend by combinations of regions and cross-sections.
Profile
Displays the legend by profiles.
Regions
The View Regions command controls the visibility of the doping concentration profiles. It
activates the Regions menu, shown in Figure 4-10 on page 69.
QRC Substrate Technology Characterization Manual
Commands
July 2011 69 Product Version 10.1.2 HF1
Figure 4-10 Regions Menu
In addition to the All and None commands, which always appear on this menu, this menu
includes the names of regions that have been defined in the session. In the example in Figure
4-10, nwell and default were defined in the session. If you click on one of these names, all the
cross-sections for the region are listed, and you can select and deselect them.
All
The View Regions All command displays all the regions defined in the session.
None
The View Regions None command displays none of the regions defined in the session.
Edit Menu
The Edit menu is shown in Figure 4-11 on page 69.
Figure 4-11 Edit Menu
QRC Substrate Technology Characterization Manual
Commands
July 2011 70 Product Version 10.1.2 HF1
Setup
The Edit Setup command specifies the parameters for region names, cross-sections, and
interface layers. It activates the Setup menu, shown in Figure 4-12 on page 70.
Figure 4-12 Setup Menu
Regions Names
The Edit Setup Regions Names command specifies the regions to use. It activates the
Define Regions dialog box, shown in Figure 4-13 on page 70.
Figure 4-13 Define Regions Dialog Box
This dialog box contains the following fields:
Add
Adds a region. It activates the Create New Region dialog box, shown in Figure 4-14 on
page 71, so you can specify the name of the region to add.
QRC Substrate Technology Characterization Manual
Commands
July 2011 71 Product Version 10.1.2 HF1
Figure 4-14 Create New Region Dialog Box
Modify
Changes a region. It activates the Add Region Name dialog box, shown in Figure 4-15
on page 71, so you can specify the name of the region to modify.
Figure 4-15 Add Region Name Dialog Box
Remove
Deletes a region.
Cross-Sections
The Edit Setup Cross-Sections command specifies the regions to use. It activates the
Cross-Sections dialog box, shown in Figure 4-16 on page 72.
QRC Substrate Technology Characterization Manual
Commands
July 2011 72 Product Version 10.1.2 HF1
Figure 4-16 Cross-Sections Dialog Box
This dialog box contains the following fields:
Add
Adds a cross-section. It activates a dialog box similar to that shown in Figure 4-14 on
page 71 so you can specify the name of the cross-section to add.
Modify
Changes a cross-section. It activates a dialog box similar to that shown in Figure 4-15 on
page 71 so you can specify the name of the cross-section to modify.
Remove
Deletes a cross-section.
Interface Connections
Defines the interface connections as either resistive or capacitive.
Resistive
Enables a resistive connection between an access port and the substrate model.
Capacitive
Enables a capacitive connection between an access port and the substrate model.
Choose the type of capacitive connection appropriate for this cross-section.
interConnectOnField
Selects interconnects that connect to the substrate but that do not reside above
a region where a device is located.
QRC Substrate Technology Characterization Manual
Commands
July 2011 73 Product Version 10.1.2 HF1
interConnectOnActive
Selects interconnects that connect to the substrate and that reside above a
region where a device is located.
gate
Selects interconnects that connect to the substrate through the gate of MOS
transistors.
Interface
The Edit Setup Interface command specifies the interface layers. It activates the
Interface menu shown in Figure 4-17 on page 73.
Figure 4-17 Interface Menu
Interconnects
The Edit Setup Interface Interconnects command specifies the layer names of the
interconnects in the design. It activates the Interconnects dialog box, shown in Figure 4-18
on page 73.
Figure 4-18 Interconnects Dialog Box
The Interconnects dialog box contains the following fields:
QRC Substrate Technology Characterization Manual
Commands
July 2011 74 Product Version 10.1.2 HF1
Add
Adds an interconnect layer. It activates a dialog box similar to that shown in Figure 4-
14 on page 71 so you can specify the name of the interconnect layer to add.
Modify
Changes an interconnect layer. It activates a dialog box similar to that shown in
Figure 4-15 on page 71 so you can specify the name of the interconnect layer to
modify.
Remove
Deletes an interconnect layer.
Gates
The Edit Setup Interface Gates command specifies the names of the interconnect
layers that connect to gates of MOS transistors. It activates the Gates dialog box, shown in
Figure 4-19 on page 74.
Figure 4-19 Gates Dialog Box
This dialog box contains the following fields:
Add
Adds an interconnect layer. It activates a dialog box similar to that shown in Figure 4-
14 on page 71 so you can specify the name of the interconnect layer to add.
Modify
QRC Substrate Technology Characterization Manual
Commands
July 2011 75 Product Version 10.1.2 HF1
Changes an interconnect layer. It activates a dialog box similar to that shown in
Figure 4-15 on page 71 so you can specify the name of the interconnect layer to
modify.
Remove
Deletes an interconnect layer.
Regions Parameters
The Edit Regions Parameters command selects regions to associate with cross-sections
for attachment to doping concentration profiles. It activates the Regions Parameters dialog
box, shown in Figure 4-20 on page 75.
Figure 4-20 Regions Parameters Dialog Box
This dialog box contains the following fields:
Region Name
Selects a region.
Cross-Sections
Selects a cross-section. It opens the cross-section selection dialog box shown in
Figure 4-21 on page 76.
QRC Substrate Technology Characterization Manual
Commands
July 2011 76 Product Version 10.1.2 HF1
Figure 4-21 Cross-Section Selection Dialog Box
This dialog box contains the following fields:
Selected Cross-Sections
Displays the names of the cross-sections already selected.
Available Cross-Sections
Displays the names of the cross-sections available for selection.
Junction Parameters
Selects the method that QRC TCT uses to calculate the capacitance values that it adds
to model the junction capacitance between both sides of the p-n junction in regions
containing these junctions. It activates the Junction Parameters dialog box, shown in
Figure 4-22 on page 76.
Figure 4-22 Junction Parameters Dialog Box
The Junction Parameters dialog box contains the following fields:
QRC Substrate Technology Characterization Manual
Commands
July 2011 77 Product Version 10.1.2 HF1
Calculated
Automatically determines the capacitance values.
User-Defined
Enables you to define the perimeter and area capacitance values. If your region
contains several p-n junctions, several fields appear for you to enter the perimeter
and area values.
2-D Geometry
Accepts a file that is generated from a process simulator and that contains two-
dimensional doping concentration information. QRC accepts MEDICI and SUPREM
file syntax.
Interface Parameters
The Edit Interface Parameters command specifies the interface parameters for the
interconnects. It activates the Interface menu shown in Figure 4-23 on page 77.
Figure 4-23 Interface Menu
Interconnect
The Edit Interface Parameters Interconnect command specifies the interface
parameters for the interconnects. It activates the Interconnect Parameters dialog box, shown
in Figure 4-24 on page 78.
QRC Substrate Technology Characterization Manual
Commands
July 2011 78 Product Version 10.1.2 HF1
Figure 4-24 Interconnect Parameters Dialog Box
This dialog box contains the following fields:
Interconnect
Specifies the interconnect layer for which to define the interface parameters.
Resistance p-Contact
Specifies the resistance of the p contacts.
Resistance n-Contact
Specifies the resistance of the n contacts.
Capacitance on Field Oxide
Specifies the capacitance of the field oxide region of the interconnect layer.
Area
Specifies the area capacitance of the field oxide region.
Perimeter
Specifies the perimeter capacitance of the field oxide region.
Capacitance on Active Region
QRC Substrate Technology Characterization Manual
Commands
July 2011 79 Product Version 10.1.2 HF1
Specifies the capacitance of the active region of the interconnect layer.
Area
Specifies the area capacitance of the active region.
Perimeter
Specifies the perimeter capacitance of the active region.
Gate
The Edit Interface Parameters Gate command specifies the interface parameters for
gates. It activates the Gate Parameters dialog box, shown in Figure 4-25 on page 79.
Figure 4-25 Gate Parameters Dialog Box
The Gate Parameters dialog box contains the following fields:
Gate
Selects the gate layer for which to define the interface parameters.
Area
Specifies the area capacitance for the gate layer.
Perimeter
QRC Substrate Technology Characterization Manual
Commands
July 2011 80 Product Version 10.1.2 HF1
Specifies the perimeter capacitance of the gate layer.
Device
The Edit Interface Parameters Device command specifies the interface parameters
for devices. It activates the Device Parameters dialog box, shown in Figure 4-26 on page 80.
Figure 4-26 Device Parameters Dialog Box
The Device Parameters dialog box contains the following fields:
Regions
Lists the regions in which the devices reside. The example in Figure 4-26 on page 80
shows the defined regions in a CMOS technology; in a BiCMOS technology, three
defined regions would appear: default, nwell, and triple well.
Cross-Sections
Specifies the cross-sections that are available for the specific region.
Capacitance
Specifies the capacitance for the area of each cross-section.
Subdivision Menu
The Subdivision menu is shown in Figure 4-27 on page 81.
QRC Substrate Technology Characterization Manual
Commands
July 2011 81 Product Version 10.1.2 HF1
Figure 4-27 Subdivision Menu
Discretization
The Subdivision Discretization command starts a discretization and displays it in the
display panel.
Move
The Subdivision Move command moves a subdivision. See Moving a Subdivision on
page 46 for detailed instructions on this procedure.
Add
The Subdivision Add command adds a subdivision. See Adding a Subdivision on
page 46 for detailed instructions on this procedure.
Delete
The Subdivision Delete command adds a subdivision. See Deleting a Subdivision on
page 47 for detailed instructions on this procedure.
Undo
The Subdivision Undo command reverses the changes made to a subdivision. See
Undoing and Redoing Changes to a Subdivision on page 47 for detailed instructions on this
procedure.
QRC Substrate Technology Characterization Manual
Commands
July 2011 82 Product Version 10.1.2 HF1
Redo
The Subdivision Redo command re-executes the undone changes to a subdivision. See
Undoing and Redoing Changes to a Subdivision on page 47 for detailed instructions on this
procedure.
Help Menu
The Help menu gives you information on the program, the version number, and how to reach
the support team.
Icon Toolbar
The icon toolbar, shown in Figure 4-28 on page 82, enables you to access menu commands
quickly. To execute a specific menu command, click on the appropriate toolbar button.
Figure 4-28 Icon Toolbar
Table 4-1 on page 82 summarizes the commands associated with the icons.
Table 4-1 Icons on the Icon Toolbar
Icon Command Menu
Opens a new session. Session New Session
Ctrl N
Opens an existing session. Session Load Session
Ctrl L
Saves the session. Session Save Session
Ctrl S
Increases the scale and unit of the
doping concentration profiles.
View Y-axis Scale
QRC Substrate Technology Characterization Manual
Commands
July 2011 83 Product Version 10.1.2 HF1
Decreases the scale and unit of the
doping concentration profiles.
View Y-axis Scale
Shows or hides the grid. View Grid
Shows or hides the subdivisions. View Subdivisions
Shows or hides the legend. View Legend
Zooms the selection. View Zoom Zoom
Zooms in. View Zoom Zoom In
Shift z
Zooms out. View Zoom Zoom Out
Ctrl z
Defines region names. Edit Setup Regions Names
Defines cross-sections. Edit Setup Cross-Sections
Defines interface interconnect layer
names.
Edit Setup Interface
Interconnects
Defines interface gate layer names. Edit Setup Interface Gates
Attaches combinations of regions
and cross-sections to profiles.
Edit Regions Parameters
Defines interface interconnect layer
parameters.
Edit Interface Parameters
Interconnect
Defines interface gate layer
parameters.
Edit Interface Parameters Gate
Defines interface device parameters. Edit Interface Parameters Device
Icon Command Menu
QRC Substrate Technology Characterization Manual
Commands
July 2011 84 Product Version 10.1.2 HF1
Discretizes profiles. Subdivision Discretization
Moves a subdivision. Subdivision Move
Ctrl M
Adds a subdivision. Subdivision Add
Ctrl A
Deletes a subdivision. Subdivision Delete
Ctrl D
Undoes last action. Subdivision Undo
u
Redoes last action. Subdivision Redo
r
Saves technology description in
encrypted format.
Session Export Description
Encrypted
Gives information about QRC TCT. Help About
Icon Command Menu
QRC Substrate Technology Characterization Manual
July 2011 85 Product Version 10.1.2 HF1
A
Input and Output Files
This appendix describes QRC TCTs input and output files.
Input Files
Three types of files are input to QRC TCT:
Session files, which manage the QRC session
Template files, which specify the values for regions, cross-sections, and interface layers
Files containing the doping concentration profiles
Session Files
A session file contains the values of all variables that you set in QRC TCT. It allows you to
stop your session, close QRC TCT, and restart your session at any point. QRC TCT does not
allow you to load session files that contain discrepancies or invalid values.
In addition, session files contain the names and paths of the files containing the doping
concentrations, additional physical parameters, and the mapping of the combinations of
regions, cross-sections, and doping concentration profiles.
Never change the session file manually; always use the QRC TCT graphical user interface.
You can choose any file name with any extension. The default suffix for session files is .tct.
Select Session Load Session to load a session file.
Refer to Loading an Existing Session on page 26 for more information on this procedure.
QRC Substrate Technology Characterization Manual
Input and Output Files
July 2011 86 Product Version 10.1.2 HF1
Template Files
A template file contains all the important values that define regions, cross-sections, and
interface layers. It contains only more general information, such as region, cross-section, and
interconnect layer names, which you can re-use for similar technologies. These setup files are
called templates. QRC TCT does not allow you to load a template file that contains
discrepancies or invalid values.
Never change the template file manually; always use the QRC TCT graphical user interface.
You can find template files in the $ASSURAHOME/share/sna/TCTtemplates directory.
Select Session New Session to load a template file.
Refer to Creating a New Session on page 25 for more information on this procedure.
You can also save a Template file from the current session.
Choose Session Export Setup to save a template file.
Refer to Exporting a Template File on page 53 for more information on this procedure.
Doping Concentration Profiles
Doping concentration profiles are available in four different formats: electrons and holes
concentration, net carrier concentration, acceptor and donor concentration, and resistivity
profiles. Refer to Appendix B, Preparing Doping Profiles, for more information on creating
these files.
Note: To derive from two-dimensional geometry the capacitance values necessary to model
junction capacitors for the p-n junctions in the regions, see Calculating Junction Capacitance
for Two-Dimensional Doping Profiles on page 49.
Output Files
QRC TCT outputs three types of files:
Session files (see Session Files on page 85)
Template files (see Template Files on page 86)
Technology description files
QRC Substrate Technology Characterization Manual
Input and Output Files
July 2011 87 Product Version 10.1.2 HF1
Technology Description Files
QRC TCT generates the technology description file used by QRC to develop the three-
dimensional substrate model.
Since the technology description files are usually derived from confidential doping profiles,
QRC TCT precludes the ability to trace back to the doping profiles from the technology
description files.
QRC TCT samples the doping profiles, so the resulting resistance profiles contain about
10 points rather than the thousand contained by measured or simulated profiles.
QRC TCT saves only the resistivity.
You can encrypt the technology description files.
You can choose the encrypted file format for the technology description files. Use Session
Export Description Encrypted.
Refer to Saving the Technology Description on page 54 for more information on this
procedure.
You can choose a file name with any extension. QRC TCT expects a file with the
SCtechnology prefix. Use a suffix to describe your technology, for example,
SCtechnology.ld.10 for a lightly doped (ld) technology with 10 subdivisions.
Encrypted Format
QRC TCT generates an SCtechnology output file that contains computed substrate
parameters, depending on the process information (layers, doping profiles, electrical
parameters, interface layers, and so on) required by QRC AoT. The SCtechnology file stores
no direct information about the doping profiles, and there is no way to recreate the doping
profiles from the information in the technology file.
However, in some cases, you might want to generate a technology file that an end user cannot
read. Using a proprietary algorithm, QRC TCT can generate an encrypted file.
In the encrypted file, only the first lines are readable by the end user. The first part of the file
contains the regions, cross-sections, and interface layers. The interface layers must be
defined in your layout. The rest of the file is encrypted. These first lines are important for the
setup of the associated QRC AoT files, such as SCparameters.cds, but do not contain any
kind of information about the doping material. The other encrypted lines ensure a high level
of confidentiality and are readable by QRC AoT only.
QRC Substrate Technology Characterization Manual
Input and Output Files
July 2011 88 Product Version 10.1.2 HF1
QRC Substrate Technology Characterization Manual
July 2011 89 Product Version 10.1.2 HF1
B
Preparing Doping Profiles
In characterizing a technology, high resolution in the doping profiles is required where the
carrier concentration changes quickly according to the depth in the material. The accuracy of
the doping information contained in the doping profile has a direct influence on the accuracy
of the substrate models calculated by QRC AoT. Defining the number of regions and cross-
sections and the possible combinations is very important. Creating simple cross-section
views of the technology facilitates the definition of the regions and cross-sections. See
Figure B-3 on page 95 for an example of this.
Typically, doping profiles are provided by the foundry or the process department. They contain
essential information for the characterization of the technology. This section of the manual
addresses the following topics in preparing doping profiles:
Doping Profiles Required - defines the doping profiles needed to characterize a
technology with QRC TCT
Doping Profile File Format - the format of doping profiles
Recommendations for Creating Doping Profiles - best practices for defining doping
profiles
QRC TCT uses interface layers and vertical doping profiles to produce a macro view of the
process characteristics. Refer to Chapter 1, Substrate Characterization, for a complete
discussion of the topic. Figure 1-2 on page 13 shows a cross-section of a layout through the
a-a axis for a p-substrate process, illustrating the different masks and identifying the interface
and profile layers.
Each combination of profile layers produces a vertical carrier concentration variation known
as the vertical doping profile. For any specific process, substrate characteristics are fully
described by a number of these doping profiles. However, for ease of use QRC TCT uses
regions and cross-sections to define the number of doping profiles necessary to characterize
a process, rather than combinations of profile layers.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 90 Product Version 10.1.2 HF1
Regions and Cross-Sections
Regions
A region is a large area at the surface of the substrate that shows a special vertical doping
concentration. This vertical doping concentration is different from the default substrate.
Different regions are also identified by vertical p-n junctions with different vertical positions.
All layout areas having the same number of transitions at the same vertical position can be
characterized as one region. Here are some examples:
A default region, which is always present and features the kind of vertical doping
concentration most likely to be found in a design.
A pwell region, which is a large area at the surface of the substrate that shows a vertical
doping concentration different from that of the default substrate. You must define a
specific region for the pwell, even though the associated doping profiles do not present
any n-p or p-n transition.
An nwell region, such as an nwell in a p-doped substrate, which has one n-p junction
between the nwell and the substrate. The nwell junction is at a specified depth.
A triple well region, which may contain two p-n junctions, such as a pwell placed in an n-
pocket on top of the p-substrate.
A deep nwell region, which is another nwell in a p-doped substrate featuring an n-p
junction that resides at a vertical depth different from the previous nwell region.
Note: In some cases, the default region for the substrate represents a pwell-type
concentration because, by default, a pwell is the kind of vertical doping concentration most
likely to be found for the given process. In this case, a specific non-pwell region instead of
a pwell region is more likely to be defined.
Cross-Sections
A cross-section is the name for a generic function that can be shared by several regions. It
defines the interface between the substrate and devices and interconnects. Here are some
examples:
Default, which is always present and should be chosen for the default cross-section
Contact, which defines a cross-section for a substrate contact, a well contact, a triple well
contact, and so forth
Channel, which defines a cross-section for the device channel
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 91 Product Version 10.1.2 HF1
Source/drain, which defines all source and drain areas in all possible regions
For a given technology, the possible realistic combinations of regions and cross-sections
determine the number of doping profiles to be provided.
Note: Some combinations of regions and cross-sections might not be realistic for a given
process. For example, it may not be possible to have PMOS built in a deep nwell, so the
combination of a deep nwell and a channel is not realistic. No doping profile need be provided
for this combination.
Information Provided by the Process Engineer
The process engineer must provide the following information to create a doping profile:
Package die thickness, if available. Otherwise, the wafer thickness is suitable.
Regions and cross-sections of the process and combinations of these regions and cross-
sections that define the different doping profiles
Doping profiles associated with each possible realistic combination from the surface
down to the backside for the different cross-sections of the process (but just a part of
these profiles will be used)
Contact resistance (.*m2), which corresponds to the vertical contact resistance. It is
calculated from the resistance of a long contact string divided by the number of contacts,
which yields a resistance-per-contact value, Rnc (./contact). Then the intrinsic contact
resistance value, Rc (.*m2), is obtained as follows:
Rc=Rnc*area
where area is the size (m2) of a single contact. This contact resistance value applies
only to layers that are used to connect to substrate and nwell taps.
Capacitance per unit area (fF/m2) and per unit length (fF/m) of the active region (thin
oxide) between the substrate and each of the interface layers
Capacitance per unit area (fF/m2) and per unit length (fF/m) of the field oxide between
the substrate and each of the interface layers
The process engineer can also provide the following optional information:
p-n junction area capacitances (fF/m2), if they are not included in the profile. An
example is a drain/substrate or source/substrate junction. In this case, the profile for
these sections should not contain doping information for the source/substrate or the
drain/substrate junction.
Perimeter (fF/m) and area (fF/m2) well junction capacitances
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 92 Product Version 10.1.2 HF1
Doping Profiles Required
One doping profile is required for each possible and realistic combination of the given regions
and cross-sections of a technology.
CMOS Process
In the simple CMOS process presented in Figure 2, you can define two regions with a special
vertical doping concentration:
The default region, where there is no special global implantation
The nwell region, where an nwell pocket is created, changing the vertical doping
concentration for a large area at the surface of the substrate
You can also define four cross-sections:
Default, which has no special connections between the substrate and the outside circuit
Contact, which defines a cross-section for a contact
Channel, which defines a cross-section for the device channels
Source/drain, which defines all source/drain areas in all possible regions
In this typical CMOS process, all possible combinations of regions and cross-sections are
realistic, so eight doping profiles are needed. The names of the doping profiles, which you
can find in the QRC TCT examples in the installation disk, are given after each description.
Region/Cross-section: profile name
Default/Default: pfield.txt
Default/Contact: pcont.txt
Default/Source_Drain: nsd.txt
Default/Channel: nchan.txt
n-well/Default: nfield.txt
n-well/Contact: ncont.txt
n-well/Source_Drain: psd.txt
n-well/Channel: pchan.txt
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 93 Product Version 10.1.2 HF1
Figure 3 shows the different doping profiles required to characterize a simple CMOS
technology. The names of the profiles are listed at the top of the figure. The names of the
different regions and cross-sections are also given.
Figure B-1 Doping Profiles by Region/Cross-Section Combinations
BiCMOS Process
This section describes the doping profiles associated with bipolar transistors, isolated
trenches, and triple well structures.
Bipolar Transistors
When the process is based on a bipolar technology, you must define the profiles carefully.
Figure 4 shows an NPN transistor using a buried n layer. Since QRC AoT characterization
starts where the SPICE model stops, the relevant doping information for the doping profile
associated with the NPN starts under the buried n layer.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 94 Product Version 10.1.2 HF1
Figure B-2 Simplified Cross-Sectional View of a Bipolar NPN Transistor in a BiCMOS
Process
Isolated Trenches
The surface implant can be broken by using deep trenches (oxide), as shown in Figure 4. The
noise is then forced to flow in the substrate depth where the resistivity is generally higher. To
handle such trenches, QRC TCT requires a specific doping profile that starts at the bottom of
the trench.
Triple Well Structures
QRC TCT can support more than one p-n junction in each profile. For BiCMOS technologies
using triple well processes, QRC TCT can process both the p-n and the n-p transitions.
In most of the processes featuring isolated pwells, two extra regions are normally defined:
The triple well region or isolated pwell region, whose doping profile is associated with the
default cross-section and has one p-n transition and one n-p transition
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 95 Product Version 10.1.2 HF1
The deep nwell region, whose doping profile is associated with the default cross-section
and has one n-p transition
The doping profiles attached to the same region must share the same number of transitions
and transition depth. Figure 5 shows how regions are defined.
Figure B-3 NMOS Transistor Using a p Buried Layer in a Triple-Well Process
The number of doping profiles depends on the technology. For some BiCMOS technologies,
you can define more than 16 doping profiles. Do not forget to include the buried layers. The
doping profile name should reflect the name of the region or cross-section to which it is linked.
Using long namesfor example, nwell_contact.txtis a good practice.
Note: You must define only one doping profile per region/cross section combination. For
example, you may have one profile for the middle of a contact to an nwell and another one for
a section 0.1 m away from the center of the same contact. You must choose the most typical
doping profile to attach to the nwell/contact combination.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 96 Product Version 10.1.2 HF1
Information Relevant to QRC AoT
QRC AoT can produce a SPICE-type netlist of the substrate. This netlist is linked to the ideal
circuit netlist containing the different components and component models so that you can
include the substrate crosstalk in the circuit simulation.
Beginning of the Doping Profile
The doping information that QRC TCT uses must not overlap the information in the device
and interconnect SPICE models. For instance, the PMOS SPICE model already includes the
junction between the p-doped source/drain and the nwell. Therefore, the PMOS source/drain
doping information for the p-doped source/drain used for the substrate modeling should start
below the p-n source/drain transition (see Figure 3).
The QRC AoT information starts where the SPICE model stops.
In the case of an n-contact to the well, the n-contact is not modeled by SPICE, so the doping
information starts at the surface of the contact, enabling QRC AoT to consider the carrier
concentration change between the contact area and the deeper substrate.
In the case of field oxide at the surface of the substrate, the doping profile starts below the
field oxide.
QRC AoT automatically removes irrelevant doping information by noting the grouping of the
doping profiles into different regions. The doping profile associated with the default cross-
section of a given region dictates the number of transitions that must be present for the other
doping profiles of the same regions. For example, the doping profile associated with the
combination nwell/default has only one n-p transition. The doping profile associated with the
combination nwell/source_drain contains two transitions: one p-n for the source/bulk junction
and one n-p for the nwell/p-substrate junction. QRC TCT processes only the doping
information that starts after the first p-n transition for the source_drain doping profile. All the
doping information between the surface of the substrate and the first transition is ignored.
Note: Although QRC TCT automatically removes the unwanted doping information, you must
ensure that this operation includes the content of the SPICE models of the different models.
You do not want to remove transitions where they are not modeled by SPICE.
Substrate Depth Reference
Every doping profile must use the same substrate depth reference. Ideally, a depth of 0 m
is chosen as the original substrate surface before any etching or epitaxial processing, but this
setting is not required. Negative values are acceptable for the substrate depth in the epitaxial
process. Therefore, the substrate surface can be considered the origin of the Z axis. The first
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 97 Product Version 10.1.2 HF1
Z value of each doping profile is computed according to this origin. For example, in Figure 6,
the first Z value of profile 1 is that of the substrate surface (0 m). Because doping profile 2
starts at a depth of 0.2 m from the substrate surface, the first Z value for profile 2 is 0.2.
Similarly, the first Z value for profile 3 is 5 m, because doping profile 3 starts at a depth of 5
m from the substrate surface.
Figure B-4 Considering a Unique Depth Profile for All Profiles
End of the Doping Profile
It is not necessary for doping profiles to define concentration values all the way to the
backside of the substrate. The information can end at a depth where the carrier concentration
is assumed to be constant. QRC TCT automatically sets the carrier concentration of the
substrate bulk equal to the last value found in each doping profile. It checks this last value to
make sure it is the same for all the doping profiles in a single technology. This last value also
determines whether the substrate is p-type or n-type.
Note: The different backside connections are handled by QRC AoT. The doping profile is not
intended to store this information.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 98 Product Version 10.1.2 HF1
Doping Profile File Format
The doping profile file is a simple text file. One file is needed for each doping profile. QRC
TCT recognizes different types of doping profiles:
Figure B-5 Carrier File Formats for Doping Profiles
Electrons and Holes Concentration
Electron and hole concentration as a function of the substrate depth. If you want to provide
the doping concentration profiles in this format, you need an ASCII file containing three
columns, separated by a blank or a tab.
The first column contains the depth, in microns, from the substrate surface.
The second column contains the n carrier (electrons) concentration [cm
3
].
The third column contains the p carrier (holes) concentration [cm
3
].
Net Carrier Concentration
Net carrier concentration (the difference between the electron concentration and the hole
concentration) as a function of the substrate depth. A positive value for net carriers
corresponds to a majority of n carriers.
To provide the doping concentration profiles in this format, create an ASCII file containing two
columns, separated by a blank or a tab.
Electrons and Holes Carriers Net Carriers
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 99 Product Version 10.1.2 HF1
The first column contains the depth, in microns, from the substrate surface.
The second column contains the net carrier concentration [cm
3
]. The net carrier
concentration is calculated by n-p and has therefore a positive sign for regions with n
(electrons) majority and a negative sign for regions with p (holes) majority.
Acceptor and Donor Concentration
Donor and acceptor as a function of the substrate depth. When the doping concentration is
expressed by the number of the donor and the acceptor, you must use a simple method to
process your data to obtain a net carrier type for the doping profile.
The Donor and acceptor profile is an ASCII file containing two columns, separated by a blank
or a tab.
The first column contains the depth, in microns, from the substrate surface.
The second column contains the net carrier concentration [cm
3
]. To calculate this data,
use the formula N
D
- N
A
, where N
A
is the concentration of the acceptors, and N
D
is the
concentration of the donors, so that the p-type is negative and the n-type is positive.
Resistivity Profiles
Figure B-6 Doping Profile Resistivity Formats
Resistivity as a function of the substrate depth. QRC TCT extracts resistivity profiles from
your doping concentration. If you want to apply your own formulas to derive the resistivity
profiles, you can use this file format to read in the resistivities. The file must be in ASCII format
and contain two columns, separated by a blank or a tab.
Resistivity Formats
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 100 Product Version 10.1.2 HF1
The first column contains the depth, in microns, from the substrate surface.
The second column contains the resistivity, in ohm-micron. If the given resistivity is
negative, the material is assumed to be p-type. If the resistivity is positive, the material is
assumed to be n-type. In the case of a doping profile characterizing an nwell region of a
p-type substrate, the given resistivity is first positive in the nwell, then negative deeper in
the substrate.
Note: To derive from two-dimensional geometry the capacitance values necessary to
model junction capacitors for the p-n junctions in the regions, see Calculating Junction
Capacitance for Two-Dimensional Doping Profiles on page 49.
In all cases, the substrate depth increases according to the material depth; the bigger the
value of the substrate depth, the deeper the substrate is. Keeping the same depth reference
for every doping profile of a given technology is very important.
QRC TCT automatically determines the type of format when you load a doping profile file by
using the Edit Profile dialog box.
Note: Use the # or ; characters to begin a line of comments in these files.
You can use tabs or spaces to separate the different columns. Use only one depth per a line.
Depth parameters must be monotonic.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 101 Product Version 10.1.2 HF1
Recommendations for Creating Doping Profiles
Cadence recommends that you adhere to the following practices when creating doping
profiles.
Substrate Depths for N-P and P-N Transitions
Every doping profile attached to a given region must use the same substrate depth for the N-
P or P-N transitions. Depending on the method used to create or measure the doping profile,
the different well-substrate junctions may not be located at exactly the same depth for the
doping profiles attached to a given region. QRC AoT then uses a user-defined transition
tolerance parameter to enable the doping profiles to be loaded. The smaller the tolerance
parameter, the better the technology characterization will be. Create the doping profiles so
that each n-p transition occurs at approximately the same depth.
QRC AoT applies a tolerance parameter only for doping profiles attached to the same region,
so doping profiles from different regions can show different n-p junction depths. Figure 9
shows the transition depths for profiles attached to the same region.
Figure B-7 Same Transition Depth for Profiles Attached to the Same Region
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 102 Product Version 10.1.2 HF1
Doping Profile Representations
Every doping profile must be represented by a smooth line, not a group of points. Give only
one doping concentration for each depth, as shown in Figure 10.
Figure B-8 Smooth Doping Representation
Junction Representations
The slope of the n-p or p-n transitions has a direct impact on the computation of the junction
capacitance and therefore on the accuracy of the model. The junction representation must
accurately reflect the method used for the creation of the pockets. If the pockets are created
by a diffusion method, transitions must not be represented by abrupt changes in the doping
concentration. Figure 11 shows how diffused junctions are represented without abrupt
transitions.
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 103 Product Version 10.1.2 HF1
Figure B-9 Representing Diffused Junctions Without Abrupt Transitions
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 104 Product Version 10.1.2 HF1
Doping Profile Example
The following doping profile corresponds to a simple CMOS epitaxial process. It defines the
n-carrier and p-carrier concentrations according to the depth of a well region (n field). The
substrate is p-type. Some values have been removed to enable you to focus on the areas of
interest. You can verify that the profile defines a well region because the substrate type is p
(defined by the last value). There are more electrons than holes at the top of this profile.
Start of the Doping Profile
The doping profile starts with a negative depth, given the epitaxial process. However, this
parameter is not required as long as every doping profile is created or measured with the
same depth reference. There are more electrons than holes at the top of this profile.
-1.422E+01 1.6039E+16 1.3035E+04
-1.411E+01 1.1912E+16 1.7552E+04
-1.401E+01 9.6259E+15 2.1719E+04
-1.383E+01 6.7089E+15 3.1163E+04
-1.364E+01 5.6979E+15 3.6692E+04
-1.345E+01 5.3119E+15 3.9358E+04
-1.326E+01 5.0608E+15 4.1311E+04
-1.308E+01 4.8283E+15 4.3300E+04
-1.289E+01 4.5938E+15 4.5511E+04
-1.270E+01 4.3542E+15 4.8016E+04
...
Transition Region
The electron concentration decreases until there is a material-type inversion (between -9.525
m and -9.338 m). The following transition is between the nwell and the p-substrate:
-9.898E+00 3.0703E+13 6.8094E+06
-9.712E+00 1.1501E+12 1.8178E+08
-9.525E+00 2.2657E+10 9.2275E+09
-9.338E+00 4.0295E+08 5.1884E+11
-9.152E+00 1.1408E+07 1.8327E+13
-8.965E+00 9.0702E+05 2.3050E+14
-8.779E+00 2.5136E+05 8.3176E+14
-8.592E+00 1.4401E+05 1.4518E+15
...
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 105 Product Version 10.1.2 HF1
Final Values
Deeper into the substrate, the different carrier concentrations slowly change. The sampling
becomes coarser. The last value defines the material as p-type for this technology.
4.000E+00 2.2674E+02 9.2206E+17
4.494E+00 2.2144E+02 9.4415E+17
5.198E+00 2.1625E+02 9.6680E+17
6.200E+00 2.1214E+02 9.8554E+17
7.626E+00 2.0987E+02 9.9616E+17
9.656E+00 2.0918E+02 9.9948E+17
1.255E+01 2.0908E+02 1.0000E+18
3.350E+02 2.0908E+02 1.0000E+18
QRC Substrate Technology Characterization Manual
Preparing Doping Profiles
July 2011 106 Product Version 10.1.2 HF1
QRC Substrate Technology Characterization Manual
July 2011 107 Product Version 10.1.2 HF1
Glossary
This glossary defines the terms and concepts that you should understand to use QRC TCT
effectively.
AC simulation
AC simulation is a small-signal SPICE analysis around one DC operating point that
computes the result for a single frequency or a set of frequencies.
access port
An access port is the interface between the substrate and any element on top of the
substrate that is connected to the substrate model. An access port is characterized by
an interface area; the net name, which is either generated by QRC or by the circuit
extractor used before QRC; and by the type of connection, which can be resistive or
capacitive and can be used to model the resistivity of an ohmic contact.
Examples of an access port are the bottom area of a transistor (for example, the buried
layer in a BiCMOS technology), a substrate contact, the source/drain region of an MOS
transistor, or a guard ring.
backannotation
Backannotation is the process of returning the extracted parasitic components to the
original netlist.
backside depth
The backside depth is the distance between the surface of the substrate and the
backside of the substrate.
BiCMOS
BiCMOS is an acronym for Bipolar Complementary Metal Oxide Silicon technology,
which combines the features of bipolar and CMOS technology.
carrier concentration
The carrier concentration is the number of electrons subtracted from the number of holes
in the substrate. If the substrate has more electrons than holes, the net carrier
concentration is positive; if the substrate has more holes than electrons, the net carrier
concentration is negative.
QRC Substrate Technology Characterization Manual
Glossary
July 2011 108 Product Version 10.1.2 HF1
CMOS
CMOS is an acronym for Complementary Metal Oxide Silicon technology, which is a
method of fabricating semiconductors by superimposing several layers of conducting
(metal), insulating (oxide), and transistor-forming materials (silicon). The silicon in this
technology includes both n-type and p-type transistors.
contact area
The contact area is an area in the layout where contacts to the substrate or a well are
located.
coupled object
A coupled object is an access port. See access port.
cross-section
A cross-section is a type of vertical, one-dimensional cut through the substrate that is
attached to a functional property, such as a contact to the substrate, a channel of a MOS
transistor, or trench isolation. The name of the cross-section is a generic name that can
be shared by different regions.
critical depth
The critical depth is the distance from the surface of the substrate to the border of the
homogenous doping concentration region. At a point deep inside the substrate, the
doping concentration no longer changes and is assumed to be homogenous.
DC simulation
DC simulation is a type of simulation that calculates only DC operation points.
default region
The default region is the area of the substrate where no other regions (such as nwells)
have been defined. QRC uses combinations of regions and cross-sections to identify
areas on the layout. Each region contains several cross-sections. Default regions must
always be defined.
differential pair
A differential pair is a two-transistor subcircuit used in analog design to provide
differential gain and common-mode rejection.
discretization
Discretization is the process of solving a set of field equations for each piece of a
partitioned two- or three-dimensional space.
QRC Substrate Technology Characterization Manual
Glossary
July 2011 109 Product Version 10.1.2 HF1
doping concentration profile
A doping concentration profile is a vertical cut through the substrate that reflects the
carrier concentration at that depth of the substrate. It is stored in a file containing the
depth from the substrate surface and the corresponding number of electrons and holes
at that depth. The doping concentration is usually not constant from the surface of the
substrate to the backside.
drawn layer
A drawn layer is a layer that defines a set of masks used in circuit fabrication.
external node
An external node is a net connecting circuit elements with the substrate macromodel via
access ports. An external node can be used by several access ports, but an access port
can only use one external node. An access port can be disconnected as well.
field oxide region
A field oxide region is the oxide on top of the substrate. It is the carrier material for the
interconnect and isolates the devices from the interconnect. Field oxide is thicker than
gate oxide, so the capacitance between the substrate and the interconnect differs for field
oxide and gate oxide.
gate oxide region
A gate oxide region is the oxide on top of the substrate in the gate regions of MOS
transistors. Gate oxide is thinner than field oxide, so the capacitance between the
substrate and the interconnect differs for gate oxide and field oxide.
GDSII
GDSII is a file in graphical design system version 2.0 Stream format.
grounded node
A grounded node is a node characterized by a zero noise level and a null external
impedance. An example is the power supply nodes.
harmonic simulation
Harmonic simulation is a small-signal simulation using only sinusoidal sources. The
simulator linearizes all non-linear equations, so it is much faster in calculating the
simulation results.
ideal netlist
The ideal netlist is a netlist of the circuit that is extracted from the layout. It is in SPICE
format. It contains descriptions for locating the devices in the layout. The ideal netlist is
input to QRC.
QRC Substrate Technology Characterization Manual
Glossary
July 2011 110 Product Version 10.1.2 HF1
interface layer
An interface layer is a mask layer above the substrate surface that can couple to the
substrate surface resistively or capacitively. Normally, an interface layer is an
interconnect layer.
ISE
ISE is a process simulator from Integrated Systems Engineering.
MEDICI
MEDICI is a process simulator from TMA.
NetConnect
NetConnect is a QRC feature that automatically backannotates the substrate model
represented by the substrate.subckt netlist to the ideal netlist of the electrical circuit.
noise injection
Noise injection is the appearance of unexpected voltage values on a net resulting from
transitioning nets or circuitry and coupling through interconnect or substrate parasitics.
nwell region
An nwell region is an area that describes all cross-sections for a well with electrons as
the majority carriers.
panning
Panning is the process of obtaining a panoramic view of the design by selecting one point
as the center of the view without changing the scale of the design.
perturbing node
A perturbing node is an aggressor node that injects noise into the substrate. It can
comprise several access ports with the same node name. A perturbing node must be
defined to use QRCs visualization tools.
phase shift
A phase shift is the difference between two sinusoidal signals when their ordinate values
are zero and their abscissa values are not. The abscissa is the X axis of a plot, and the
ordinate is the Y axis of a plot.
PISCES
PISCES is a device simulator from TMA.
QRC Substrate Technology Characterization Manual
Glossary
July 2011 111 Product Version 10.1.2 HF1
profile layer
A profile layer is a mask layer that directly affects the lateral variation of carrier
concentration across the substrate.
sensitive node
A sensitive node is a non-grounded node that may be affected by noise injected by other
nodes. It is characterized by a null noise level and a non-zero external impedance, and
represents the equivalent impedance of the ideal circuit seen from this node.
small-signal simulation
Small-signal simulation is the same as harmonic simulation or AC simulation. See
harmonic simulation.
Spectre
Spectre is a SPICE-like network simulator from Cadence.
SPICE
SPICE (Simulation Program with Integrated Circuit Emphasis) is a simulation program
originally developed at UC Berkeley as a transistor-level circuit simulator. SPICE is now
often used as a generic term for any transistor-level circuit simulator.
substrate abstract view
A substrate abstract view is a layout view that contains geometry that defines the
interfaces between devices and the substrate, as well as regions; netlist information that
defines the nets used; and special parameters for the extraction.
SUPREM
SUPREM is a process simulator from TMA.
surface mesh
The surface mesh is a rectangular grid that QRC uses to divide the layout area into
smaller subregions. The mesh is defined at the surface of the layout and includes the
geometry of devices, guard rings, and so forth.
transient simulation
Transient simulation is a time-domain SPICE analysis using both large and small-signal
characteristics. It is the most accurate type of simulation but also the most time-
consuming.
trench isolation
Trench isolation is a part of the substrate, composed of silicon dioxide, that isolates circuit
devices from each other and from substrate noise. It is like a wall inside the substrate that
blocks parasitic currents flowing at the surface.
QRC Substrate Technology Characterization Manual
Glossary
July 2011 112 Product Version 10.1.2 HF1
triple well
A triple well is a substrate structure containing two p-n junctions. An example is a pwell,
which resides in a pocket of n-type material in a p-type substrate.
zooming
Zooming is the process of magnifying or shrinking the view of a selected area of the chip.
QRC Substrate Technology Characterization Manual
July 2011 113 Product Version 10.1.2 HF1
A
AC simulation 107
acceptor and donator concentration 99
access ports 15, 33, 107
Add Cross-Section dialog box 34
Add Interconnect dialog box 37
Add option
Cross-Sections dialog box 72
Define Regions dialog box 70
Gates dialog box 74
Interconnect Definition dialog box 74
Add Region Name dialog box 32, 71
Area option
active region 79
field oxide region 78
gate layer 79
Available Cross-Sections option 76
B
backannotation 107
backside depth 43, 61, 107
Backside Depth option 61
BiCMOS 53
BiCMOS technology 107
C
Calculated option 48, 77
Capacitance on Active Region option 78
Capacitance on Field Oxide option 78
Capacitance option 80
Capacitive option 35, 72
carrier concentration 17, 43, 107
clearing database 25, 86
CMOS 12, 108
color definition window 42
Compress option 63
contact area 108
contact cross-sections 18
Create New Interconnect dialog box 37
Create New Region dialog box 32, 70
critical depth 43, 62, 108
cross-section selection dialog box 40, 41,
42, 75
cross-sections
adding 72
associating with regions 39, 48, 49, 75
available for region 80
capacitance of 80
changing 72
contact 18
default 17
defined in template file 19
defining 33, 71
definition 17, 108
deleting 72
displaying names of available 76
displaying names of selected 76
purpose 33
selecting 75
source/drain 18
Cross-Sections dialog box 33, 71
Cross-Sections option 75, 80
D
DC simulation 108
deep well regions 17
default cross-sections 17
default directory for doping profiles 29, 60
Default option 43
default regions 17, 108
Defaults option 63
Define Regions dialog box 31, 70
design flow 18
Device Parameters dialog box 52, 80
die thickness 61
differential pair 108
Directories option 23
discretization
backside depth 43
changing parameters 44, 60
critical depth 43
definitiion 108
starting 46, 81
Discretization dialog box 44, 60
doping profile attachment window 40, 42
doping profiles
attaching to region/cross-section
combinations 38
changing scale of 64
characterizing the substrate 15
default directory 29, 60
definition 109
displaying 20
displaying electron and hole
QRC Substrate Technology Characterization Manual
July 2011 114 Product Version 10.1.2 HF1
concentration on linear scale 29,
64
displaying electron and hole
concentration on logarthmic
scale 30, 64
displaying net concentration profiles on
linear scale 30, 64
displaying net concentration profiles on
logarithmic scale 30, 64
displaying resistivity profiles on linear
scale 30, 64
displaying resistivity profiles on
logarithmic scale 30, 64
formats
acceptor and donator
concentration 99
electrons and holes 98
net carrier concentration 98
resistivity profiles 99
impedance 16
input to RCX-HF TCT 19, 85
legend 30, 67
loading 29
p-n transitions 62
region visibility 30, 68
sampling
by number of samples 62
by step width 62
substrate discretization 43
two-dimensional 49
vertical 13
drawn layers 12, 109
E
Edit command
Interface Parameters command 77
Device command 52, 80, 83
Gate command 51, 79, 83
Interconnect command 50, 77, 83
Regions Parameters command 39, 48,
49, 75, 83
Setup command 70
Cross-Sections command 33, 71,
83
Interface command 73
Gates command 38, 74, 83
Interconnects command 36, 73,
83
Regions Names command 31, 70,
83
Edit menu 69
electron and hole concentration profiles 64
encrypted format 54, 59, 87
exiting RCX-HF TCT 24, 59
Export menu 58
Export Setup File Selection dialog box 54
external nodes 109
F
field oxide region 78, 109
file selection dialog box 23, 26, 55, 58, 60
Files option 23
Filter option 23
G
gate layer
area capacitance 79
interface parameters 79
perimeter capacitance 79
Gate option 79
gate option 36, 73
gate oxide region 109
Gate Parameters dialog box 51, 79
gates
adding 74
changing 74
deleting 75
Gates Definition dialog box 74
GDSII 109
graphical user interface 19
grid visibility 28, 67
grounded node 109
H
harmonic simulation 109
Help command
About command 84
Help menu 82
Horizontal Axis option 43
I
icon bar 22
QRC Substrate Technology Characterization Manual
July 2011 115 Product Version 10.1.2 HF1
icon toolbar 82
ideal netlist 109
impedance 16
inputs 19
interconnect layer names 73
interconnect layers
adding 74
changing 74
deleting 74
Interconnect option 78
Interconnect Parameters dialog box 50, 77
interConnectOnActive option 36, 73
interConnectOnField option 36, 72
Interconnects Definition dialog box 36, 73
interface connections 72
Interface Connections option 72
interface layers
defined in RCX-HF TCT 13
defined in template files 19
definition 12, 110
specifying 73
Interface menu 77
interface parameters
defining 77
devices 52, 80
gates 51, 79
interconnects 50, 77
specifying layer 78
ISE 49
J
junction capacitance
calculating automatically 77
calculating from simulator
information 77
calculating manually 77
modeling 48, 76
junction parameters 48, 76
Junction Parameters dialog box 48, 76
Junction Parameters option 76
L
legend 30, 67
Legend dialog box 30, 67
line style 43
Line Style option 43
linear scale 64
loading existing session 26, 58, 85
logarithmic scale 64
M
main window 21
mask layers 12
Maximum Junction Potential Drop
option 63
MEDICI 49, 77, 110
menu bar 22
mesh generation 15, 16
metal_1 layer 51
metal_2 layer 50
Modify Cross-Section dialog box 35
Modify option
Cross-Sections dialog box 72
Define Regions dialog box 71
Interconnect Definition dialog box 74
Modifyoption
Gates dialog box 74
MOS transistors 74
N
n contacts 78
net carrier concentration 98
net concentration profiles 64
netconnect 110
NMOS 12
noise injection 110
Number of Subdivisions option 62
nwell region 110
O
Options command
Default Directory command 29, 60
Discretization command 44, 60
Options menu 60
outputs 19
P
p contacts 78
panning 28, 67, 110
Perimeter option
QRC Substrate Technology Characterization Manual
July 2011 116 Product Version 10.1.2 HF1
active region 79
field oxide region 78
gate layer 79
perturbing node 110
phase shift 110
PISCES 110
planar technology 12
PMOS 12
p-n junctions
defining perimeter and area
capacitance 77
defining regions 17
modeling junction capacitance 48, 49,
76
p-n transitions 62
polysilicon layer 50
potential drop 63
profile layers 12, 13, 111
Profile option 68
R
RC network 13
RCX-HF TCT
attaching doping profiles to region/cross-
section combinations 38
changing region parameters 47
commands in 57
controlling screen display 27
creating output 52
cross-sections 17
design flow 18
discretizing substrate 43
exiting 24, 59
file selection dialog boxes 23
function 11
graphical user interface 19
inputs 19, 85
loading doping profiles 29
main window 21
outputs 19, 86
regions 17
specifying regions, cross-sections,
interface layers 31
starting 21
starting sessions 25
substrate characterization 12
three-dimensional modeling 15
vertical mesh generation 16
Redraw option 43
Region Name option 75
region parameters 39, 47, 48, 49, 75
Region/Cross-section option 68
regions
adding 70
associating with cross-sections 39, 48,
49, 75
changing 71
cross-sections available for 80
deep well 17
default 17
defined in template files 19
defining 17, 31, 70
deleting 71
device locations 80
displaying 69
selecting 75
triple well 17
visibility 30, 68
well 17
Regions menu 68
Regions option 80
Regions Parameters dialog box 39, 41, 48,
75
Remove option
Cross-Sections dialog box 72
Define Regions dialog box 71
Gates dialog box 75
Interconnect Definition dialog box 74
Resistance p-Contact option 78
Resistive option 35, 72
resistivity profiles 18, 64, 99
reverting to saved session 27, 58
S
Sample option 62
Sampling option 62
saving session 52, 58
saving session as template file 59
saving technology description file 54, 59,
87
Select a Default Directory dialog box 29
Select a Doping Profile dialog box 39, 41,
42
Selected Cross-Sections option 76
Selection option 24
sensitive node 111
Session command
Exit command 24, 59
QRC Substrate Technology Characterization Manual
July 2011 117 Product Version 10.1.2 HF1
Export command 54, 58
Description command
Encrypted command 54, 59, 84,
87
Setup command 59
Load Session command 26, 58, 82, 85
New Session command 25, 82, 86
Revert to Saved command 27, 58
Save Session command 52, 58, 82
session files 19, 85
Session menu 57
sessions
loading existing 26, 58, 85
reverting to saved 27, 58
saving 52, 58
Set Color option 42
Setup menu 70
small-signal simulation 111
source/drain cross-sections 18
Spectre 111
SPICE 111
starting RCX-HF TCT 21
Step option 62
step width 62
stop implants 13
Subdivision command
Add command 46, 81, 84
Delete command 47, 81, 84
Discretization command 46, 81, 84
Move command 46, 81, 84
Redo command 47, 82, 84
Undo command 47, 81, 84
Subdivision menu 80
subdivisions
adding 46, 81
concentrating 63
creating 16
deleting 47, 81, 84
impedance 16
moving 46, 81
number above and below critical
depth 62
redoing changes 47, 82, 84
starting discretization 46, 81
undoing changes 47, 81, 84
vertical and horizontal impedance
values 11
vertical and horizontal resistances 15
visibility 46, 67
substrate abstract view 14, 111
substrate characterization 12
substrate discretization 43
substrate macromodel 14
SUPREM 49, 77, 111
surface mesh 14, 111
T
technology description file
output by RCX-HF TCT 19, 87
purpose 15
saving as encrypted 54, 59, 87
temperature 61
Temperature option 61
template file selection window 25, 57
template files
input to RCX-HF TCT 19, 85, 86
output by RCX-HF TCT 19
saving session as 59
templates directory 57
three-dimensional modeling 15
title banner 22
transient simulation 111
Transition Tolerance option 62
trench isolation 111
triple well regions 17, 112
2-D Geometry option 49, 77
two-dimensional doping profiles 49
U
User-Defined option 49, 77
V
Vertical Axis option 43
vertical mesh generation 16
View command
Grid command 28, 67, 83
Legend command 30, 67, 83
Regions command 30, 68
All command 69
None command 69
Subdivisions command 46, 67, 83
Y-Axis Scale command 64, 82
Electrons And Holes (lin)
command 29, 64
Electrons And Holes (log)
command 30, 64
QRC Substrate Technology Characterization Manual
July 2011 118 Product Version 10.1.2 HF1
Net Carriers (lin command 64
Net Carriers (lin) command 30
Net Carriers (log) command 30, 64
Resistivity (lin) command 30, 64
Resistivity (log) command 30, 64
Zoom command 28, 65
Full Screen command 67
Next Zoom command 66
Pan Down command 28, 67
Pan Left command 67
Pan Right command 28, 67
Pan Up command 28, 67
Previous Zoom command 66
Zoom command 65, 83
Zoom In command 28, 65, 83
Zoom In x Axis command 66
Zoom Out command 28, 66, 83
Zoom Out x Axis command 66
Zoom Out y Axis command 66
Zoomcommand
Pan Left command 28
Zoom In y Axis command 66
View menu 63
W
well regions 17
Z
Zoom menu 65
zooming 28, 65, 112