SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2564
(F8F60VX2)
600V 8A
FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. static Rds(on) is small. The switching time is fast. The Avalanche resistance guaranteed. APPLICATION
Switching power supply of
OUTLINE DIMENSIONS
Case : E-pack
Case : FTO-220
(Unit : mm)
AC 100-200V input Inverter Power Factor Control Circuit
RATINGS
Absolute Maximum Ratings = 25j Tc i Item Symbol Conditions Tstg Storage Temperature Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current DCj i ID Continuous Drain Current Peak) i IDP Continuous Source Current DCj i IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch= 25 Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR i Recommended torque : 0.3Nm j Ratings -55`150 150 600 }30 8 24 8 50 8 2 0.5 Unit V
A W A kV N E m
Copyright & Copy;2000 Shindengen Electr
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions
2SK2564 ( F8F60VX2 )
Min. 600 Typ. Max. 250 0.1 2.4 2.5 5.5 0.9 3.0 1.2 3.5 1.5 2.5 Unit V A S V / nC pF 80 290 ns
ID = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V ID = 4A, VDS = 10V ID = 4A, VGS = 10V ID = 1mA, VDS = 10V IS = 4A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 8A VDS = 10V, VGS = 0V, f = 1MHZ ID = 4A, RL = 37.5, VGS = 10V
42 1130 85 245 55 195
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2564
24 Tc = 55C
Transfer Characteristics
25C 20
Drain Current ID [A]
16 100C 12 150C
VDS = 25V pulse test TYP 0 5 10 15 20
Gate-Source Voltage VGS [V]
2SK2564
10
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
ID = 4A 1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2564
6
Gate Threshold Voltage
Gate Threshold Voltage VTH [V]
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2564
100
Safe Operating Area
10 100s
Drain Current ID [A]
200s
R DS(ON) limit
1ms
10ms
0.1
DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2564
Transient Thermal Impedance
10
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-2
10-3
10-1
100
101
102
Time t [s]
2SK2564
100
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
80
60
40
20
50
100
150
Starting Channel Temperature Tch [C]
2SK2564
10000
Capacitance
Capacitance Ciss Coss Crss [pF]
Ciss 1000
Coss 100
Crss
f=1MHz Tc=25C TYP 10 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2564
Single Avalanche Current - Inductive Load
VDD = 90V VGS = 15V 0V Rg = 25 IAS = 8A
100
10
EAR = 29mJ
EAS = 290mJ
Single Avalanche Current IAS [A]
0.1 0.1 1
10
100
Inductance L [mH]
2SK2564
100
Power Derating
80
Power Derating [%]
60
40
20
50
100
150
Case Temperature Tc [C]
2SK2564
500
Gate Charge Characteristics
20
VDS
Drain-Source Voltage VDS [V]
VDD = 400V 200V 300 100V
VGS
15
10 200
5 100 ID = 8A TYP 0 0 20 40 60 80 0 100
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
