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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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Paramedico Guadalajara

This document provides the product specification for the SavantIC Semiconductor 2SD2349 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package, built-in damper diode, and is suitable for high voltage, high speed applications like horizontal deflection output for color TVs. - Absolute maximum ratings include collector-base voltage of 1500V, collector current of 10A, and junction temperature of 150°C. - Characteristics include typical emitter-base breakdown voltage of 5V, collector-emitter saturation voltage of 1.5V, DC current gain of 170, and collector output capacitance of 0.7pF. -

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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Paramedico Guadalajara
28 views3 pages
This document provides the product specification for the SavantIC Semiconductor 2SD2349 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package, built-in damper diode, and is suitable for high voltage, high speed applications like horizontal deflection output for color TVs. - Absolute maximum ratings include collector-base voltage of 1500V, collector current of 10A, and junction temperature of 150°C. - Characteristics include typical emitter-base breakdown voltage of 5V, collector-emitter saturation voltage of 1.5V, DC current gain of 170, and collector output capacitance of 0.7pF. -

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2SD 2349 Sal Hztal

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This document provides the product specification for the SavantIC Semiconductor 2SD2349 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package, built-in damper diode, and is suitable for high voltage, high speed applications like horizontal deflection output for color TVs. - Absolute maximum ratings include collector-base voltage of 1500V, collector current of 10A, and junction temperature of 150°C. - Characteristics include typical emitter-base breakdown voltage of 5V, collector-emitter saturation voltage of 1.5V, DC current gain of 170, and collector output capacitance of 0.7pF. -

Copyright:

Attribution Non-Commercial (BY-NC)
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
28 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

Paramedico Guadalajara
This document provides the product specification for the SavantIC Semiconductor 2SD2349 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package, built-in damper diode, and is suitable for high voltage, high speed applications like horizontal deflection output for color TVs. - Absolute maximum ratings include collector-base voltage of 1500V, collector current of 10A, and junction temperature of 150°C. - Characteristics include typical emitter-base breakdown voltage of 5V, collector-emitter saturation voltage of 1.5V, DC current gain of 170, and collector output capacitance of 0.7pF. -

Copyright:

Attribution Non-Commercial (BY-NC)
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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2349

DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low saturation voltage APPLICATIONS www.DataSheet4U.com Horizontal deflection output for color TV
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings (Ta=25 )


SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 10 20 5 50 150 -55~150 V A A A W UNIT V

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time ICP=7A ;IB1=1.4A;fH=15.75kHz tf Fall time CONDITIONS IE=300mA , IC=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=7A 83 10 6 1 MIN 5

2SD2349

SYMBOL V(BR)EBO VCEsat


www.DataSheet4U.com

TYP.

MAX

UNIT V

5.0 1.5 1 250

V V mA mA

VBEsat ICBO IEBO hFE-1 hFE-2 fT COB VF ts

9 3 170 1.8 12 0.7 MHz pF V s s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SD2349

www.DataSheet4U.com

Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)

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