Search Results (44)

Ternary and quaternary compounds offer vast potential for tailoring material properties through compositional adjustments and complex interactions among their constituent elements. However, many of their compositional possibilities still need to be investigated. Energy-dispersive X-ray spectroscopy (EDX) is crucial for determining elemental composition but is inadequate for identifying chemical bonds and physical properties. This work introduces a novel methodology using a stoichiometric deviation vector (SDV) to estimate the physical and compositional feature characteristics of Si, N, and O compounds by comparing actual molar ratios with ideal stoichiometric references. We validated this method by estimating Si-O bonds in silicon oxynitride samples, demonstrating strong agreement with FTIR and refractive index results. We also extended our proof of principle for SiAlON compounds and established an adaptable procedure to analyze compounds with more than three elements. This flexible methodology will significantly value the materials research community, providing valuable compositional features and physical insights by performing elemental EDX characterizations. Full article

Although in general ions are not able to migrate in the solid-state position due to rigid skeletal structure, in some solid electrolytes with a low energy barrier and high ionic conductivities, these ion transition can occur. In this work, we considered several solid electrolytes including lithium phosphorus oxy-nitride (LIPON), a lithium super-ionic conductor (SILICON), and thio-LISICON. For the fabrication and characterization of the solid electrolyte’s fabrication, we used a single-step ball milling (SSBM) procedure. Through this research on all-solid-state rechargeable lithium-ion batteries, our target is to discuss solving several problems in solid LIBs that have recently escalated due to raised concerns relating to safety hazards such as solvent leakage and the flammability of the liquid electrolytes used for commercial LIBs. Through this research, we tested the conductivity amounts of various substrates containing amorphous glass, SSBM, and glass-ceramic samples. Obviously, the SSBM glass-ceramics increased the conductivity, and we also found that the values for conductivity attained by SSBM were higher than those values for glass-ceramics. Using an SSBM technique, silicon nanoparticles were used as an anode material and it was found that the charge and discharge curves in the battery cell cycled between 0.009 and 1.45 V versus Li⁺/Li at a current density of 210 mA g⁻¹ at room temperature. Since high resistance causes degradation between the cathode material (LiCoO₂) and the solid electrolyte, we added GeS2 and SiS₂ to the Li₂S-P₂S₅ system to obtain higher conductivities and better stability of the electrode–electrolyte interface. Full article

A room-temperature photoluminescence (PL) study of amorphous Si/amorphous silicon oxynitride multilayer films prepared by plasma-enhanced chemical vapor deposition is reported. The PL peak position can be tuned from 800 nm to 660 nm by adjusting the oxygen/nitride ratio in the a-SiO_xN_y:H sublayer. The Fourier transform infrared (FTIR) absorption spectra indicate that the shift of the PL peak position is accompanied by an increase in the Si-O-Si absorption peak’s intensity, which induces the structural disorder at the interface, resulting in an increase in band gap energy. The effects of size on the photoluminescence spectrum have been studied. As a result, it has been observed that the addition of oxygen atoms introduces a large number of localized states at the interface, causing a blue shift in the emission peak position. With an increase in oxygen atoms, the localized states tend to saturate, and the quantum phenomenon caused by the a-Si sublayer becomes more pronounced. It is found that, as the thickness of the a-Si sublayer decreases, the increase in the [O/N] ratio is more likely to cause an increase in disordered states, leading to a decrease in luminescence intensity. For a-Si/a-SiO_xN_y:H samples with thinner a-Si sublayers, an appropriate value of [O/N] is required to achieve luminescence enhancement. When the value of [O/N] is one, the enhanced luminescence is obtained. It is also suggested that the PL originates from the radiative recombination in the localized states’ T_3- level-related negatively charged silicon dangling bond in the band tail of the a-Si:H sublayer embedded in an a-Si/a-SiO_xN_y:H multilayer structure. Full article

Healing in compromised and complicated bone defects is often prolonged and delayed due to the lack of bioactivity of the fixation device, secondary infections, and associated oxidative stress. Here, we propose amorphous silicon oxynitride (SiON_x) as a coating for the fixation devices to improve both bioactivity and bacteriostatic activity and reduce oxidative stress. We aimed to study the effect of increasing the N/O ratio in the SiON_x to fine-tune the cellular activity and the antioxidant effect via the NRF2 pathway under oxidative stress conditions. The in vitro studies involved using human mesenchymal stem cells (MSCs) to examine the effect of SiON_x coatings on osteogenesis with and without toxic oxidative stress. Additionally, bacterial growth on SiON_x surfaces was studied using methicillin-resistant Staphylococcus aureus (MRSA) colonies. NRF2 siRNA transfection was performed on the hMSCs (NRF2-KD) to study the antioxidant response to silicon ions. The SiON_x implant surfaces showed a >4-fold decrease in bacterial growth vs. bare titanium as a control. Increasing the N/O ratio in the SiON_x implants increased the alkaline phosphatase activity >1.5 times, and the other osteogenic markers (osteocalcin, RUNX2, and Osterix) were increased >2-fold under normal conditions. Increasing the N/O ratio in SiON_x enhanced the protective effects and improved cell viability against toxic oxidative stress conditions. There was a significant increase in osteocalcin activity compared to the uncoated group, along with increased antioxidant activity under oxidative stress conditions. In NRF2-KD cells, there was a stunted effect on the upregulation of antioxidant markers by silicon ions, indicating a role for NRF2. In conclusion, the SiON_x coatings studied here displayed bacteriostatic properties. These materials promoted osteogenic markers under toxic oxidative stress conditions while also enhancing antioxidant NRF2 activity. These results indicate the potential of SiON_x coatings to induce in vivo bone regeneration in a challenging oxidative stress environment. Full article

Fiber-chip edge couplers can minimize mode mismatch in integrated lithium niobate (LiNbO₃) photonics via facilitating broad optical bandwidth coupling between optical fibers and waveguide circuits. We designed a high-efficiency multi-tip edge coupler utilizing the lithium niobate on insulator (LNOI) platform for achieving superior fiber-to-chip coupling. The device comprises a bilayer LN inversely tapered waveguide, three 3D inversely tapered waveguides, and a silicon oxynitride (SiON) cladding waveguide (CLDWG). Finite difference method (FDM) and eigenmode expansion (EME) simulations were utilized to simulate and optimize the edge coupler structure specifically within the 1550 nm band. This coupler demonstrates a low fiber-chip coupling loss of 0.0682/0.0958 dB/facet for TE/TM mode at 1550 nm when interfaced with a commercially cleaved single-mode fiber (SMF) with a mode field diameter (MFD) of approximately 8.2 μm. Moreover, the 1 dB bandwidth of the coupler is 270 nm for the TE mode and 288 nm for the TM mode. Notably, the coupler exhibits a relatively large tolerance for optical misalignment owing to its large mode spot size of up to 4 μm. Given its ultra-low loss, high-efficiency ultra-broadband capabilities, and substantial tolerance features, this proposed device provides a paradigm for fiber-to-chip edge coupling within lithium niobate photonics. Full article

In this work, nanostructured TiAlCrN coatings were deposited on a WC-Co substrate using a co-sputtering process varying the silicon composition on the coatings. The influence of silicon content on the mechanical, chemical, and tribological performance of the coatings was studied. The hardness increases from 11 to 16 GPa with the Si content; also, Young’s modulus increases from 260 to 295 GPa. The H/E ratio, which is a measure of materials’ ability to take the strain before deformation, is also increased with the increase in Si content, suggesting increased toughness. XPS analysis reveals that the coatings present titanium, aluminum, chromium, and silicon nitrides. The tribological behavior of the coatings was conducted through ball-on-disc tests, in which the results show that the coefficients of friction range from 0.15 to 0.55, with the lowest for the samples with the highest Si content. This behavior is benefited by the formation of oxynitride species, identified by XPS, which acts as lubricating layers and diffusion barriers. TiAlCrSixN coating presents a potential application for severe wear owing to its tribological performance. Full article

Selective emission of green light phosphor powder Y₄SiAlO₈N as the host material and Tb³⁺ as the activator was successfully achieved using spray pyrolysis (SP). Samples synthesized with various calcination temperatures and precursor concentrations indicated that the most suitable parameter for the synthesized powder is the calcination of 0.05 M Y_3.92SiAlO₈N:0.08Tb³⁺ at a temperature of 1600 °C. The effect of the selected parameters was substantiated by the high purity of the Y_3.92SiAlO₈N:0.08Tb³⁺ phase, as confirmed by X-ray diffraction (XRD) analysis. The Scherrer equation was used to calculate grain size. In addition, scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometry (EDS) confirmed the presence of micron-sized particles, which matched well with the theoretical chemical composition. The specific surface area of the phosphor powder was determined using the Brunauer–Emmett–Teller method. Finally, fluorescence spectrometry was used to determine the luminescence properties. The correlation between the crystallinity of the phosphor powder and narrowing emission is also discussed. Full article

Broadband filters with sharp transition edges are important elements in diverse applications, including Raman and fluorescence spectral analysis, wideband wavelength-division multiplexing (WDM), and multi-octave interferometry. While the multi-layer thin-film interference broadband filter has been widely applied in various free-space optical systems, its integrated counterpart is still far from mature, which is also highly desired for constructing chip-scale miniature optical modules. In this article, we design, fabricate, and characterize an integrated broadband filter with sharp transition edges. An adiabatic coupler based on silicon nitride (SiN) and silicon oxynitride (SiON) composite waveguide is employed here. Long-pass, short-pass, band-pass, and band-stop filters can be realized in a single design of the composite waveguide coupler for a specific wavelength range, with only a difference in the SiN taper waveguide width. Experimental results with a roll-off value of larger than 0.7 dB nm⁻¹ and a 15 dB extinction ratio (ER) are presented. Full article

Titanium–silicon oxynitride sulfite (TiSiNOS) is a coating material that is deposited on H13 tool steel using the scalable pulsed power plasma (S3P) technique, where the coating deposition is a hybrid process consisting of a mix of sputtering and arc evaporation. The maximum hardness and coating thickness measured on TiSINOS-coated H13 tool steel are 38 GPa and 3.1 µm, respectively. After implementing the L₉ orthogonal array, nine samples were coated with TiSiNOS, which consists of the same properties. The nine coated and uncoated samples were tested separately based on the L₉ pattern to achieve accurate results. The experimental results indicate that the wear loss can be reduced by minimizing the load at 25 N even if the temperature rises to 250 °C. SEM analysis reveals that the uncoated sample has higher wear loss when compared with the coated samples, and material pullout is visible from the uncoated sample. Based on these results, it can be concluded that TiSINOS coating in H13 tool steel helps in improving the tool life during the drilling process. Taguchi was used in this research to evaluate the wear behavior. The data observed from the experiment were analyzed using the Minitab tool. The most crucial factor is to determine the effects of process parameters. A higher temperature influenced the wear behavior of the tool. Full article

Silicon carbide and silicon nitride materials were intensively studied in the end of the past century, yet some aspects of its physical chemistry require investigation. The strength characteristics of Si₃N₄-SiC refractories are moderate; however, these materials sometimes demonstrate “stress–strain” behavior, more typical for composite materials than for the brittle ceramics. These materials may be considered to be ceramic composites because they consist of big grains of silicon carbide surrounded by small grains of silicon nitride, with strict interfaces between them. There is no direct certainty whether Si₃N₄-SiC compositions may be called composite materials or brittle ceramic materials from the viewpoint of mechanics and strength. The balance of α/β modifications of silicon nitride in Si₃N₄-SiC composite material and, the occurrence and the role of silicon oxynitride Si₂ON₂ are also a matter of scientific interest in processing of Si₃N₄-SiC composite material. The same may be said about the particles of silicon nitride between the grains of silicon carbide—there is no direct understanding whether silicon nitride grains will be isometric grains or needle-like crystals. Full article

In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiN_xO_y) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiN_xO_y, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiN_xO_y systems, and discussed the related PL mechanisms. Full article

This work characterises the structure and mechanical properties, such as adhesion, of two different chemical vapour deposition (CVD) coatings deposited onto silicon aluminium oxynitride (Si₃N₄ + Al₂O₃ + Y₂O₃) round (RNGN) milling cutter tooling inserts. These inserts are often known by the trade abbreviation “SiAlON”. Wear was produced on the inserts using unidirectional sliding (pin-on-disc type) and scratch testing. Two coatings were investigated: a multilayer CVD coating (Coating A) with a composition of TiN + TiCN + Al₂O₃ and a bilayer coating (Coating B) with a composition of Al₂O₃ + TiN. Microstructural analysis was conducted after wear testing and Coating B demonstrated high stability when subjected to high alternating shear and tensile stresses, high abrasion resistance and very high adhesion to the SiAlON ceramic insert substrate when compared to Coating A. Coating A demonstrated a low capacity to distribute alternating shear and tensile stresses during the pin-on-disc and scratch testing, which led to failure. The scratch and pin-on-disc results from this study correlate highly with completed machining insert wear analysis that has used Coating A and Coating B SiAlON inserts to machine aged Inconel 718. Full article

A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics it is compatibility with silicon technology. It is expected that SiN_xO_y-based memristors will combine the advantages of memristors based on nonstoichiometric silicon oxides and silicon nitrides. In the present work, the plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon oxynitride-based memristor. The memristor leakage currents determine its power consumption. To minimize the power consumption, it is required to study the charge transport mechanism in the memristor in the high-resistance state and low-resistance state. The charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii–Efros percolation model. The charge transport in the forming-free PECVD SiO_0.9N_0.6-based memristor in high and low resistance states is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. For the high-resistance state, the trap ionization energy W is 0.35 eV, and the trap concentration N_d is 1.7 × 10¹⁹ cm⁻³; for the low-resistance state, the trap ionization energy W is 0.01 eV, and the trap concentration N_t is 4.6 × 10¹⁷ cm⁻³. Full article

Surface coating approaches for silicon (Si) have demonstrated potential for use as anodes in lithium-ion batteries (LIBs) to address the large volume change and low conductivity of Si. However, the practical application of these approaches remains a challenge because they do not effectively accommodate the pulverization of Si during cycling or require complex processes. Herein, Si-embedded titanium oxynitride (Si-TiON) was proposed and successfully fabricated using a spray-drying process. TiON can be uniformly coated on the Si surface via self-assembly, which can enhance the Si utilization and electrode stability. This is because TiON exhibits high mechanical strength and electrical conductivity, allowing it to act as a rigid and electrically conductive matrix. As a result, the Si-TiON electrodes delivered an initial reversible capacity of 1663 mA h g⁻¹ with remarkably enhanced capacity retention and rate performance. Full article

The high-temperature interactions of β-SiAlONs with sodium fluoride NaF at 1650 °C under a nitrogen atmosphere are described in this paper. It was found that in case of Si₅AlON₇ the formation of phases enriched with aluminum occurred, including Si₄Al₂O₂N₆ at an NaF loading of 0.5 wt.% and Si₄Al₂O₂N₆ and Si_3.1Al_2.9O_2.9N_5.1 at an NaF loading of 2.0 wt.%, although Si₅AlON₇ still was a major phase. For Si₄Al₂O₂N₆, a kind of disproportionation was observed, and Si₅AlON₇ formed together with Si₃Al₃O₃N₅ and Si_3.1Al_2.9O_2.9N_5.1. Moreover, the initial phase Si₄Al₂O₂N₆ was not identified at all, while Si₅AlON₇ was found to be a major phase at an NaF loading of 0.5 wt.% and Si_3.1Al_2.9O_2.9N_5.1 prevailed at an NaF loading of 2.0 wt.%. All the samples showed a high degree of densification when studied with scanning electronic microscopy. Full article