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11 pages, 1033 KiB  
Article
Microfluidic Detection Platform for Determination of Ractopamine in Food
by Cheng-Xue Yu, Kuan-Hsun Huang, To-Lin Chen, Chan-Chiung Liu and Lung-Ming Fu
Biosensors 2024, 14(10), 462; https://doi.org/10.3390/bios14100462 - 26 Sep 2024
Abstract
A novel microfluidic ractopamine (RAC) detection platform consisting of a microfluidic RAC chip and a smart analysis device is proposed for the determination of RAC concentration in meat samples. This technology utilizes gold nanoparticles (AuNPs) modified with glutamic acid (GLU) and polyethyleneimine (PEI) [...] Read more.
A novel microfluidic ractopamine (RAC) detection platform consisting of a microfluidic RAC chip and a smart analysis device is proposed for the determination of RAC concentration in meat samples. This technology utilizes gold nanoparticles (AuNPs) modified with glutamic acid (GLU) and polyethyleneimine (PEI) to measure RAC concentration in food products. When RAC is present, AuNPs aggregate through hydrogen bonding, causing noticeable changes in their optical properties, which are detected using a self-built UV–visible micro-spectrophotometer. Within the range of 5 to 80 ppb, a linear relationship exists between the absorbance ratio (A693nm/A518nm) (Y) and RAC concentration (X), expressed as Y = 0.0054X + 0.4690, with a high coefficient of determination (R2 = 0.9943). This method exhibits a detection limit of 1.0 ppb and achieves results within 3 min. The practical utility of this microfluidic assay is exemplified through the evaluation of RAC concentrations in 50 commercially available meat samples. The variance between concentrations measured using this platform and those determined via liquid chromatography–tandem mass spectrometry (LC-MS/MS) is less than 8.33%. These results underscore the viability of the microfluidic detection platform as a rapid and cost-effective solution for ensuring food safety and regulatory compliance within the livestock industry. Full article
(This article belongs to the Special Issue Biosensors Based on Microfluidic Devices—2nd Edition)
44 pages, 9817 KiB  
Review
Microfluidics and Nanofluidics in Strong Light–Matter Coupling Systems
by Evelyn Granizo, Irina Kriukova, Pedro Escudero-Villa, Pavel Samokhvalov and Igor Nabiev
Nanomaterials 2024, 14(18), 1520; https://doi.org/10.3390/nano14181520 - 19 Sep 2024
Viewed by 484
Abstract
The combination of micro- or nanofluidics and strong light–matter coupling has gained much interest in the past decade, which has led to the development of advanced systems and devices with numerous potential applications in different fields, such as chemistry, biosensing, and material science. [...] Read more.
The combination of micro- or nanofluidics and strong light–matter coupling has gained much interest in the past decade, which has led to the development of advanced systems and devices with numerous potential applications in different fields, such as chemistry, biosensing, and material science. Strong light–matter coupling is achieved by placing a dipole (e.g., an atom or a molecule) into a confined electromagnetic field, with molecular transitions being in resonance with the field and the coupling strength exceeding the average dissipation rate. Despite intense research and encouraging results in this field, some challenges still need to be overcome, related to the fabrication of nano- and microscale optical cavities, stability, scaling up and production, sensitivity, signal-to-noise ratio, and real-time control and monitoring. The goal of this paper is to summarize recent developments in micro- and nanofluidic systems employing strong light–matter coupling. An overview of various methods and techniques used to achieve strong light–matter coupling in micro- or nanofluidic systems is presented, preceded by a brief outline of the fundamentals of strong light–matter coupling and optofluidics operating in the strong coupling regime. The potential applications of these integrated systems in sensing, optofluidics, and quantum technologies are explored. The challenges and prospects in this rapidly developing field are discussed. Full article
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<p>Strong light–matter coupling (SC) timeline: from cavity quantum electrodynamics (QED) to ultrastrong coupling (USC). The data are from Refs. [<a href="#B1-nanomaterials-14-01520" class="html-bibr">1</a>,<a href="#B2-nanomaterials-14-01520" class="html-bibr">2</a>,<a href="#B5-nanomaterials-14-01520" class="html-bibr">5</a>,<a href="#B6-nanomaterials-14-01520" class="html-bibr">6</a>,<a href="#B7-nanomaterials-14-01520" class="html-bibr">7</a>,<a href="#B8-nanomaterials-14-01520" class="html-bibr">8</a>,<a href="#B9-nanomaterials-14-01520" class="html-bibr">9</a>,<a href="#B10-nanomaterials-14-01520" class="html-bibr">10</a>,<a href="#B11-nanomaterials-14-01520" class="html-bibr">11</a>,<a href="#B12-nanomaterials-14-01520" class="html-bibr">12</a>,<a href="#B13-nanomaterials-14-01520" class="html-bibr">13</a>,<a href="#B14-nanomaterials-14-01520" class="html-bibr">14</a>,<a href="#B15-nanomaterials-14-01520" class="html-bibr">15</a>,<a href="#B16-nanomaterials-14-01520" class="html-bibr">16</a>,<a href="#B17-nanomaterials-14-01520" class="html-bibr">17</a>,<a href="#B18-nanomaterials-14-01520" class="html-bibr">18</a>,<a href="#B19-nanomaterials-14-01520" class="html-bibr">19</a>,<a href="#B20-nanomaterials-14-01520" class="html-bibr">20</a>,<a href="#B21-nanomaterials-14-01520" class="html-bibr">21</a>,<a href="#B22-nanomaterials-14-01520" class="html-bibr">22</a>,<a href="#B23-nanomaterials-14-01520" class="html-bibr">23</a>,<a href="#B24-nanomaterials-14-01520" class="html-bibr">24</a>,<a href="#B25-nanomaterials-14-01520" class="html-bibr">25</a>,<a href="#B26-nanomaterials-14-01520" class="html-bibr">26</a>].</p>
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<p>Schematics of weak (on the <b>left</b>) and strong (on the <b>right</b>) light–matter coupling. Here, a plasmonic resonator is represented by an array of periodically arranged gold rings coupled with emitters. In the weak coupling regime, the emitter decay rate <math display="inline"><semantics> <mrow> <mi>c</mi> <mo stretchy="false">(</mo> <mi>t</mi> <mo stretchy="false">)</mo> </mrow> </semantics></math> is enhanced (Purcell enhancement) without a substantial modification of the emitter eigenstate. In the strong coupling regime, the emitter decays at a rate governed by the Rabi frequency <math display="inline"><semantics> <mrow> <msub> <mi mathvariant="sans-serif">Ω</mi> <mi>R</mi> </msub> </mrow> </semantics></math>, which leads to the formation of two new eigenstates, exhibiting anti-crossing behavior: upper and lower polaritons (UP and LP, respectively).</p>
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<p>The decrease in the ratio of the reaction rates under vibrational strong coupling and outside the cavity as a function of the Rabi splitting energy. The inset shows the linear dependence of the Rabi splitting on the square root of the 1-phenyl-2-trimethylsilylacetylene (PTA) concentration. Adapted with permission from Thomas et al. (2016) [<a href="#B22-nanomaterials-14-01520" class="html-bibr">22</a>], published by Wiley-VCH GmbH &amp; Co. KGaA, Hoboken, NJ, USA.</p>
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<p>The quality factor, Q, versus mode volume of different types of cavities. Adapted with permission from Liu et al. (2022) [<a href="#B49-nanomaterials-14-01520" class="html-bibr">49</a>], published by Elsevier, Amsterdam, The Netherlands.</p>
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<p>Numerical and computational methodologies for describing light–matter interactions. Adapted with permission from Flick et al. (2018) [<a href="#B59-nanomaterials-14-01520" class="html-bibr">59</a>], published by De Gruyter, Berlin, Germany.</p>
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<p>Different setups used for obtaining strong light–matter coupling for the use in micro-/nanofluidics: (<b>A</b>) Fabry–Pérot cavity, (<b>B</b>) plasmon nanocavity, (<b>C</b>) photonic crystal fiber plasmonic sensor, (<b>D</b>) whispering-gallery mode microcavity (microring resonator).</p>
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<p>(<b>A</b>) (<b>Left panel</b>): schematics of the flow-cell Fabry–Pérot cavity. (<b>Right panel</b>): infrared absorption spectrum of DPPA (black) and its transmission spectrum under strong coupling with the Fabry–Pérot cavity modes (red). (<b>B</b>) (<b>Left panel</b>): optical micrographs showing white light transmission through the nanofluidic Fabry–Pérot cavities before and after filling them with toluene. (<b>Central panel</b>): schematic cross section of Fabry–Pérot nanocavities of thickness d, made of Ag layers and glass substrates. (<b>Right panel</b>): angle-resolved dispersion reflection spectra of a Fabry–Pérot nanocavity containing chlorin e6 in dimethylformamide at a high concentration under a strong coupling regime. Adapted with permission from George, J., et al. (2015) [<a href="#B21-nanomaterials-14-01520" class="html-bibr">21</a>], published by the American Chemical Society (<b>A</b>), and Bahsoun, H. et al. (2017) [<a href="#B84-nanomaterials-14-01520" class="html-bibr">84</a>], published by the American Chemical Society (<b>B</b>).</p>
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<p>(<b>A</b>) (<b>Left panel</b>): Two parallel gold nanoflakes floating in an aqueous solution of a ligand (CTAB). Bright-field image of a self-assembled dimer formed from flake I (triangular) and flake II (hexagonal). Inset: a SEM image of an exemplary gold nanoflake. (<b>Central panel</b>): a self-assembled microcavity coupled to a few layers of WSe<sub>2</sub>. (<b>Right panel</b>): anti-crossing of self-assembled microcavity coupled to a few layers of WSe<sub>2</sub>. (<b>B</b>) (<b>Left panel</b>): schematics of the exciton–polariton device based on a film (with the nanoscale thickness <span class="html-italic">d</span>) of aligned carbon nanotubes. (<b>Right panel</b>): the vacuum Rabi splitting <math display="inline"><semantics> <mrow> <mo stretchy="false">(</mo> <mo>ℏ</mo> <msub> <mi mathvariant="sans-serif">Ω</mi> <mi>R</mi> </msub> <mo stretchy="false">)</mo> </mrow> </semantics></math> (red dots) and the extracted coupling strength <math display="inline"><semantics> <mrow> <mo stretchy="false">(</mo> <mn>2</mn> <mo>ℏ</mo> <mi>g</mi> <mo stretchy="false">)</mo> </mrow> </semantics></math> (blue triangles) continuously tuned via the polarization angle <math display="inline"><semantics> <mi>ϕ</mi> </semantics></math> from strong to weak coupling. Adapted with permission from Munkhbat et al. (2021) [<a href="#B24-nanomaterials-14-01520" class="html-bibr">24</a>], published by Springer Nature (<b>A</b>), and Gao et al. (2018) [<a href="#B94-nanomaterials-14-01520" class="html-bibr">94</a>], published by Springer Nature (<b>B</b>).</p>
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<p>Schematic representation of a photonic-crystal fiber surface plasmon resonance sensor. (<b>Left panel</b>): the sensor with an evanescent wave generated by the surface plasmon wave propagating at the metal–dielectric interface. (<b>Right panel</b>): the real part of the effective index for the core and surface plasmon polariton (spp) modes and the loss spectrum of the core mode. The wavelength at which complete mode coupling occurs (1700 nm) is indicated.</p>
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<p>(<b>A</b>) Schematic representation of a D-shaped photonic-crystal fiber (PCF) surface plasmon resonance biosensor for refractive index sensing. (<b>Left panel</b>): PCF cross section. Central panel: PCF general view. (<b>Right panel</b>): schematics of the sensor operation. (<b>B</b>) (<b>Left panel</b>): a micrograph of the PCF cross section before polishing. Central panel: the cross section of the D-shaped sensor. (<b>Right panel</b>): a SEM image of the polished and Au-coated D-shaped PCF. Split air holes can be seen. (<b>C</b>) Experimentally detected spectrum at different RIs. Adapted with permission from Luo et al. (2023) [<a href="#B123-nanomaterials-14-01520" class="html-bibr">123</a>], published by Elsevier (<b>B</b>,<b>C</b>).</p>
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<p>Loss spectra of the sensor with different (<b>A</b>–<b>C</b>) diameters of the air holes and (<b>D</b>) hole-to-hole spacings (Λ). Adapted with permission from Ma et al. (2023) [<a href="#B124-nanomaterials-14-01520" class="html-bibr">124</a>], published by Elsevier.</p>
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<p>(<b>A</b>) (<b>Left panel</b>): schematics of the nanostructured microfluidic device for detection of H<sub>2</sub>O<sub>2</sub>. (<b>Right panel</b>): dynamic tuning of the plasmon−exciton coupling in the microfluidic channel: emergence and evolution of hybrid polariton states in scattering spectra. Colors show the concentrations of J-aggregates adjusted from 0 to 6.0 μM (from the bottom up, the concentrations are 0, 0.5, 1.0, 1.5, 2.0, 3.0, 4.0, 5.0, and 6.0 μM) (<b>B</b>) (<b>Top panel</b>): STEM images of a device with two quantum dots trapped within plasmonic bowties. The red arrows indicate the QDs in the bowtie gaps. (<b>Bottom panel</b>): the dark-field scattering (green) and photoluminescence (PL) (red) spectra of the device. (<b>C</b>) Left panel: schematics of the nanogap patch antenna. (<b>Central panel</b>): a SEM image of the fabricated patch antenna (top view). (<b>Right panel</b>): measured reflectance spectra of the nanogap patch antenna cavity for different periodicities of the array. The solid curve shows the measured reflectance from a single nanogap patch antenna. (<b>D</b>) Schematics of a plasmonic biosensor capable of detecting bisphenol A at ultralow concentrations. Adapted with permission from Liang et al. (2021) [<a href="#B51-nanomaterials-14-01520" class="html-bibr">51</a>], published by American Chemical Society (<b>A</b>); Gupta et al. (2021) [<a href="#B142-nanomaterials-14-01520" class="html-bibr">142</a>], published by Springer Nature (<b>B</b>); Dayal et al. (2021) [<a href="#B145-nanomaterials-14-01520" class="html-bibr">145</a>], published by American Chemical Society (<b>C</b>), and Allsop et al. (2019) [<a href="#B138-nanomaterials-14-01520" class="html-bibr">138</a>], published by Elsevier (<b>D</b>).</p>
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<p>A schematic diagram of the principle of a whispering-gallery mode microcavity (microring resonator) used for biosensing and the corresponding optical loss spectrum. Reproduced with permission from Park, M.K. (2013) [<a href="#B152-nanomaterials-14-01520" class="html-bibr">152</a>], published by Elsevier.</p>
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<p>Regimes of sensing using whispering-gallery mode (WGM) microcavities: (<b>A</b>) mode shifting, (<b>B</b>) mode broadening, and (<b>C</b>) mode splitting.</p>
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<p>(<b>A</b>) Schematics of a ring resonator. (<b>B</b>) Schematics of an optofluidic microbubble biosensor. (<b>Left panel</b>) Analytes enter the microfluidic channel and are captured by the interior surface of the cavity. (<b>Right panel</b>) Schematics of a gold nanorod adsorbed on the interior surface of the microbubble cavity of the Au-coated microsensor. (<b>C</b>) (<b>a</b>) A SEM image of a silicon disk resonator; (<b>b</b>) a magnified image of the silicon disk, with a 25 nm gap indicated; (<b>c</b>) simulation of the transverse magnetic fundamental mode in an aqueous environment; (<b>d</b>) a photograph of the on-chip sensor integrated with a microfluidic channel; (<b>D</b>) schematics of a microdroplet sensor. Reproduced with permission from Bahadoran et al. (2022) [<a href="#B168-nanomaterials-14-01520" class="html-bibr">168</a>], published by Springer Nature (<b>A</b>); Yu et al. (2022) [<a href="#B181-nanomaterials-14-01520" class="html-bibr">181</a>], published by the National Academy of Sciences of USA (<b>B</b>); Kim and Lee (2019) [<a href="#B184-nanomaterials-14-01520" class="html-bibr">184</a>], published by Optica, formerly known as the Optical Society of America (OSA) (<b>C</b>); and Duan et al. (2020) [<a href="#B185-nanomaterials-14-01520" class="html-bibr">185</a>], published by Elsevier (<b>D</b>).</p>
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13 pages, 16375 KiB  
Article
Laser-Induced Periodic Surface Structures and Their Application for Gas Sensing
by Johann Zehetner, Ivan Hotovy, Vlastimil Rehacek, Ivan Kostic, Miroslav Mikolasek, Dana Seyringer and Fadi Dohnal
Micromachines 2024, 15(9), 1161; https://doi.org/10.3390/mi15091161 - 17 Sep 2024
Viewed by 445
Abstract
Semiconducting metal oxides are widely used for solar cells, photo-catalysis, bio-active materials and gas sensors. Besides the material properties of the semiconductor being used, the specific surface topology of the sensors determines device performance. This study presents different approaches for increasing the sensing [...] Read more.
Semiconducting metal oxides are widely used for solar cells, photo-catalysis, bio-active materials and gas sensors. Besides the material properties of the semiconductor being used, the specific surface topology of the sensors determines device performance. This study presents different approaches for increasing the sensing area of semiconducting metal oxide gas sensors. Micro- and nanopatterned laser-induced periodic surface structures (LIPSSs) are generated on silicon, Si/SiO2 and glass substrates. The surface morphologies of the fabricated samples are examined by FE SEM. We selected the nanostructuring and characterization of nanostructured source Ni/Au and Ti/Au films prepared on glass using laser ablation as the most suitable of the investigated approaches. Surface structures produced on glass by backside ablation provide 100 nm features with a high surface area; they are also transparent and have high resistivity. The value of the hydrogen sensitivity in the range concentrations from 100 to 500 ppm was recorded using transmittance measurements to be twice as great for the nanostructured target TiO2/Au as compared to the NiO/Au. It was found that such transparent materials present additional possibilities for producing optical gas sensors. Full article
(This article belongs to the Special Issue Ultrafast Laser Micro- and Nanoprocessing, 2nd Edition)
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<p>Failed attempt to generate LIPSS directly on a Si/SiO<sub>2</sub> substrate (<b>a</b>) single pulse and (<b>b</b>) overlapping pulse procedure. LIPSS formation starts at the Si and not the SiO<sub>2</sub> surface.</p>
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<p>LIPSS fabrication directly on the Si wafer: (<b>a</b>) one scan generates LSFL-I type orientated perpendicular to polarization; (<b>b</b>) two scans cause transformation into LSFL-II type parallel orientated to polarization.</p>
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<p>LIPSS fabrication directly on the Si wafer: (<b>a</b>) four scans and no changes from LSFL-II typ, only the structure becomes more distinct; (<b>b</b>) four scans with reversed polarization and scan direction, LSFL-II type parallel orientated to polarization but now in y direction.</p>
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<p>(<b>a</b>) Thermal oxide on LIPSS has poor insulating quality due to sintered debris (inside red circle) from ablation; (<b>b</b>) alternative solution was sputtered Si<sub>3</sub>N<sub>4</sub> layer, red circle in the cross-section.</p>
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<p>(<b>a</b>) Subsurface nonlinear ionization, first breaking through to the surface at the white aero-points after one scan; (<b>b</b>) skin-like debris from the ionization breaking through after 10 over-scans and LSFL-I formation phase started. Nano-plasma bubble defects in the Si bulk will be later confined in thermal oxide and reduce breakdown voltage.</p>
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<p>(<b>a</b>) Backside formation of HSFLs between a metal electrode and SiC sample surface due to LIPAA effect indicated by the yellow arrow; (<b>b</b>) 100 nm hatched (depicted by yellow line) HSFLs produced with LIPAA.</p>
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<p>Preparation of LIPPS structures on microscopic glass.</p>
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<p>Experimental setup for optical gas sensing measurements.</p>
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<p>Metamorphosis of LIPSS depending on fluence and number of over-scans. (<b>c</b>,<b>d</b>) Highest fluence in the focal plane and lowest in (<b>a</b>). Sample position indicated by the colored arrows. At an intermediate fluence and 40 overscans pinholes are generated (<b>b</b>). The fluence is related to the sample position indicated by the colored arrows.</p>
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<p>(<b>a</b>) HSFL-II formation in the area of low laser intensity and LSFL-I formation at high-intensity position. (<b>b</b>) Light field modulation and spatial enhancement by an oxide particle, pinhole formation close to the particle. This is partly reminiscent of the visualization of threshold lowering in the LIPAA process. No LIPSS at a greater distance to the particle observed.</p>
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<p>FE SEM images in detail and EDX analysis of selected elements of the target nanostructres for (<b>a</b>) Ni/Au and (<b>b</b>) Ti/Au sources.</p>
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<p>(<b>a</b>) Optical transmittance spectra and optical band gap values determined using the Tauc method for (<b>b</b>) NiO/Au and (<b>c</b>) TiO<sub>2</sub>/Au target nanostructures.</p>
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<p>Changes in transmittance with the effect of H<sub>2</sub> concentrations on (<b>a</b>) NiO/Au and (<b>b</b>) TiO<sub>2</sub>/Au target nanostructures.</p>
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12 pages, 4854 KiB  
Article
Efficient Second-Harmonic Generation in Adapted-Width Waveguides Based on Periodically Poled Thin-Film Lithium Niobate
by Junjie He, Lian Liu, Mianjie Lin, Houhong Chen and Fei Ma
Micromachines 2024, 15(9), 1145; https://doi.org/10.3390/mi15091145 - 12 Sep 2024
Viewed by 572
Abstract
Frequency conversion process based on periodically poled thin-film lithium niobate (PPTFLN) has been widely recognized as an important component for quantum information and photonic signal processing. Benefiting from the tight confinement of optical modes, the normalized conversion efficiency (NCE) of nanophotonic waveguides is [...] Read more.
Frequency conversion process based on periodically poled thin-film lithium niobate (PPTFLN) has been widely recognized as an important component for quantum information and photonic signal processing. Benefiting from the tight confinement of optical modes, the normalized conversion efficiency (NCE) of nanophotonic waveguides is improved by orders of magnitude compared to their bulk counterparts. However, the power conversion efficiency of these devices is limited by inherent nanoscale inhomogeneity of thin-film lithium niobate (TFLN), leading to undesirable phase errors. In this paper, we theoretically present a novel approach to solve this problem. Based on dispersion engineering, we aim at adjusting the waveguide structure, making local waveguide width adjustment at positions of different thicknesses, thus eliminating the phase errors. The adapted waveguide width design is applied for etched and loaded waveguides based on PPTFLN, achieving the ultrahigh power conversion efficiency of second harmonic generation (SHG) up to 2.1 × 104%W−1 and 6936%W−1, respectively, which surpasses the power conversion efficiency of other related works. Our approach just needs standard periodic poling with a single period, significantly reducing the complexity of electrode fabrication and the difficulty of poling, and allows for the placing of multiple waveguides, without individual poling designs for each waveguide. With the advantages of simplicity, high production, and meeting current micro–nano fabrication technology, our work may open a new way for achieving highly efficient second-order nonlinear optical processes based on PPTFLN. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Second Edition)
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<p>(<b>a</b>) Three-dimensional structure diagram of etched waveguide based on PPTFLN with adapted waveguide width design. (<b>b</b>) Schematic diagram depicting the <span class="html-italic">z</span>-<span class="html-italic">x</span> cross section of waveguide structure, where <span class="html-italic">w</span> and <span class="html-italic">t</span> denote the width and thickness of the etched waveguide, respectively. The etched depth and sidewall angle are <span class="html-italic">h</span> = 300 nm and <span class="html-italic">θ</span> = 75°, respectively. The modal field distribution of TE bound mode for (<b>c</b>) FF wave at 1600 nm and (<b>d</b>) SH wave at 800 nm.</p>
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<p>(<b>a</b>) The relationship between poling period and LN thickness when the other waveguide structural parameters are fixed. The red star represents the required poling period when LN thickness is 600 nm, and the blue line represents the required poling period as LN thickness changes. (<b>b</b>) The variation of poling period with waveguide width under different LN thicknesses. (<b>c</b>) The required waveguide width as a function of LN thickness when poling period sets as Λ = 4.20 μm.</p>
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<p>(<b>a</b>,<b>b</b>) The blue curves show the distribution of LN thickness along the etched waveguide. The red lines show (<b>a</b>) uniform waveguide width design and (<b>b</b>) adapted waveguide width design along the etched waveguide, respectively. (<b>c</b>,<b>d</b>) are the SH spectrum corresponding to uniform and adapted waveguide width design, respectively.</p>
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<p>(<b>a</b>) Three-dimensional structure diagram of the polymer-loaded waveguide based on PPTFLN with an adapted waveguide width design. (<b>b</b>) Schematic diagram depicting the <span class="html-italic">z</span>-<span class="html-italic">x</span> cross section of waveguide structure, where w denotes the width of the polymer-loaded waveguide. The modal field distribution of TE-bound mode for (<b>c</b>) the FF wave at 1600 nm and (<b>d</b>) the SH wave at 800 nm.</p>
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<p>(<b>a</b>) The relationship between poling period Λ and LN thickness <span class="html-italic">t</span> when the other waveguide structural parameters are fixed. The red star represents the required poling period when LN thickness is 600 nm, and the blue line represents the required poling period as LN thickness changes. (<b>b</b>) The variation in poling period with waveguide width under different LN thicknesses. (<b>c</b>) The required waveguide width as a function of LN thickness when poling period sets as Λ = 5.05 μm.</p>
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<p>(<b>a</b>,<b>b</b>) The blue curves show the distribution of LN thickness along the loaded waveguide. The red lines show (<b>a</b>) uniform waveguide width design and (<b>b</b>) adapted waveguide width design along the loaded waveguide, respectively. (<b>c</b>,<b>d</b>) are the SH spectrum corresponding to uniform and adapted waveguide width design, respectively.</p>
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<p>Calculated peak power conversion efficiency of nanophotonic LN waveguides with different lengths using uniform waveguide width and adapted waveguide width design.</p>
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26 pages, 6242 KiB  
Article
Wireless Sensor Node for Chemical Agent Detection
by Zabdiel Brito-Brito, Jesús Salvador Velázquez-González, Fermín Mira, Antonio Román-Villarroel, Xavier Artiga, Satyendra Kumar Mishra, Francisco Vázquez-Gallego, Jung-Mu Kim, Eduardo Fontana, Marcos Tavares de Melo and Ignacio Llamas-Garro
Chemosensors 2024, 12(9), 185; https://doi.org/10.3390/chemosensors12090185 - 11 Sep 2024
Viewed by 483
Abstract
In this manuscript, we present in detail the design and implementation of the hardware and software to produce a standalone wireless sensor node, called SensorQ system, for the detection of a toxic chemical agent. The proposed wireless sensor node prototype is composed of [...] Read more.
In this manuscript, we present in detail the design and implementation of the hardware and software to produce a standalone wireless sensor node, called SensorQ system, for the detection of a toxic chemical agent. The proposed wireless sensor node prototype is composed of a micro-controller unit (MCU), a radio frequency (RF) transceiver, a dual-band antenna, a rechargeable battery, a voltage regulator, and four integrated sensing devices, all of them integrated in a package with final dimensions and weight of 200 × 80 × 60 mm and 0.422 kg, respectively. The proposed SensorQ prototype operates using the Long-Range (LoRa) wireless communication protocol at 2.4 GHz, with a sensor head implemented on a hetero-core fiber optic structure supporting the surface plasmon resonance (SPR) phenomenon with a sensing section (L = 10 mm) coated with titanium/gold/titanium and a chemically sensitive material (zinc oxide) for the detection of Di-Methyl Methyl Phosphonate (DMMP) vapor in the air, a simulant of the toxic nerve agent Sarin. The transmitted spectra with respect to different concentrations of DMMP vapor in the air were recorded, and then the transmitted power for these concentrations was calculated at a wavelength of 750 nm. The experimental results indicate the feasibility of detecting DMMP vapor in air using the proposed optical sensor head, with DMMP concentrations in the air of 10, 150, and 150 ppm in this proof of concept. We expect that the sensor and wireless sensor node presented herein are promising candidates for integration into a wireless sensor network (WSN) for chemical warfare agent (CWA) detection and contaminated site monitoring without exposure of armed forces. Full article
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<p>Hardware architecture of the proposed wireless sensor node.</p>
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<p>Wireless sensor node: (<b>a</b>) 3D model isometric (top/front/left) view, (<b>b</b>) 3D model lateral view, and (<b>c</b>) integrated and packaged wireless sensor node prototype.</p>
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<p>Architecture of the SensorQ system. Showing deployed wireless sensor nodes at the bottom of the figure connected to the communications gateway mounted on UAVs. The communications gateway makes data available to the end user through the MQTT protocol and 4G/5G wireless communications links.</p>
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<p>Wireless sensor node electronics: (<b>a</b>) communications side view and (<b>b</b>) sensors side view. A description of each part according to enclosed numbers is provided in <a href="#chemosensors-12-00185-t003" class="html-table">Table 3</a>.</p>
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<p>Wireless sensor node antenna: (<b>a</b>) top view, showing the stacked dual band antenna setup and (<b>b</b>) bottom view showing interconnections and power divider network.</p>
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<p>Gateway electronics. A description of each part according to enclosed numbers is provided in <a href="#chemosensors-12-00185-t005" class="html-table">Table 5</a>.</p>
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<p>Graphical representation of the proposed sensor probe supporting the SPR effect with stacked material layers deposited on the SMF: longitudinal optical fiber section (left) and optical fiber cross sections (right).</p>
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<p>Representation of data collection by the WSN composed of one gateway and three sensor nodes operating under low-power listening mode.</p>
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<p>Representation of the frame-slotted ALOHA’s (FSA) time organization whilst the gateway is collecting data from each sensor node into a defined sequence of frames (top), slot representation (bottom).</p>
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<p>Wireless sensor node software architecture based on four inter-related layers (L1–L4): L1 is for the Hardware Abstraction Layer, L2 is for the Real-Time Operating System, L3 is for the drivers to access other devices, and L4 is for the Application Layer.</p>
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<p>Wireless software architecture of the gateway based on four inter-related layers (L1–L4): L1 is for the interface with different peripherals, L2 is for the Raspbian operating system of the Raspberry Pi, L3 is for the MQT client, a GNSS receiver, and a Lora radio transceiver driver, and L4 is for the parallel running tasks.</p>
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<p>Screenshot of the configuration dashboard, which allows for the manipulation of several parameters regarding the experiment, the MAC layer, the PHY layer, and the commands sections.</p>
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<p>Deployment of different data collected in the measurements dashboard (screenshot), such as environmental conditions (gas concentration and temperature), the status (RSSI, acceleration, and battery level), and the location (GPS position and altitude) from two sensor node prototypes.</p>
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<p>Average data collection time depending on (<b>a</b>) the number of slots per frame for a given number of sensor nodes (each node sends 1 data packet of 22 bytes), (<b>b</b>) the number of sensor nodes for a given number of slots per frame (each node sends 1 data packet of 22 bytes), and (<b>c</b>) the number of slots per frame for a given number of sensor nodes (each node sends 10 data packets of 22 bytes or 1 data packet of 220 bytes). All results are presented for SF-6. (<b>a</b>) Data collection time over number of slots (single packet of 22 bytes), (<b>b</b>) data collection time over number of sensor nodes (single packet of 22 bytes), and (<b>c</b>) data collection time over number of slots (10 packets of 22 bytes or 1 packet of 220 bytes).</p>
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<p>Sensor head experimental setup based on the optical fiber hetero-core structure coated with Ti/Au/Ti/ZnO.</p>
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<p>Normalized transmitted intensity for different concentrations of DMMP mixed in the air and interaction with our proposed sensing probe (dots: measured data; dashed line: trend).</p>
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8 pages, 411 KiB  
Article
Modeling Electronic Devices with a Casimir Cavity
by G. Jordan Maclay
Physics 2024, 6(3), 1124-1131; https://doi.org/10.3390/physics6030070 - 10 Sep 2024
Viewed by 345
Abstract
The Casimir effect has been exploited in various MEMS (micro-electro-mechanical system) devices, especially to make sensitive force sensors and accelerometers. It has also been used to provide forces for a variety of purposes, for example, for the assembly of considerably small parts. Repulsive [...] Read more.
The Casimir effect has been exploited in various MEMS (micro-electro-mechanical system) devices, especially to make sensitive force sensors and accelerometers. It has also been used to provide forces for a variety of purposes, for example, for the assembly of considerably small parts. Repulsive forces and torques have been produced using various configurations of media and materials. Just a few electronic devices have been explored that utilize the electrical properties of the Casimir effect. Recently, experimental results were presented that described the operation of an electronic device that employed a Casimir cavity attached to a standard MIM (metal–insulator–metal) structure. The DC (direct current) conductance of the novel MIM device was enhanced by the attached cavity and found to be directly proportional to the capacitance of the attached cavity. The phenomenological model proposed assumed that the cavity reduced the vacuum fluctuations, which resulted in a reduced injection of carriers. The analysis presented here indicates that the optical cavity actually enhances vacuum fluctuations, which would predict a current in the opposite direction from that observed. Further, the vacuum fluctuations near the electrode are shown to be approximately independent of the size of the optical cavity, in disagreement with the experimental data which show a dependence on the size. Thus, the proposed mechanism of operation does not appear correct. A more detailed theoretical analysis of these devices is needed, in particular, one that uses real material parameters and computes the vacuum fluctuations for the entire device. Such an analysis would reveal how these devices operate and might suggest design principles for a new genre of electronic devices that make use of vacuum fluctuations. Full article
(This article belongs to the Section Atomic Physics)
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<p>The MIMOC (metal–insulator–metal optical cavity) device. An optical cavity (OC) of thickness <math display="inline"><semantics> <mrow> <mi>d</mi> <mi>c</mi> </mrow> </semantics></math> made from PMMA (polymethyl methacralate, spin coated photoresist) or SiO<sub>2</sub> is bounded by an aluminum mirror and a MIM interface. The latter consists of a palladium electrode of thickness <math display="inline"><semantics> <mrow> <mi>d</mi> <mi>p</mi> </mrow> </semantics></math>, a layer of insulator of thickness <math display="inline"><semantics> <mrow> <mi>d</mi> <mi>I</mi> </mrow> </semantics></math>, and a thick nickel electrode. A current is positive if it flows from the Pd electrode to the grounded Ni electrode.</p>
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<p>The conductance in mS of the device shown in <a href="#physics-06-00070-f001" class="html-fig">Figure 1</a>, as a function of 100/thickness <math display="inline"><semantics> <mrow> <mi>d</mi> <mi>c</mi> </mrow> </semantics></math> of the optical cavity made from PMMA. <math display="inline"><semantics> <mrow> <mi>d</mi> <mi>c</mi> </mrow> </semantics></math> varies from 33 nm to 1100 nm for the data shown. The data are taken from Figure 3b of Ref. [<a href="#B7-physics-06-00070" class="html-bibr">7</a>] and Figure 4a of Ref. [<a href="#B8-physics-06-00070" class="html-bibr">8</a>]. The solid line just connects the data points. A linear fit <math display="inline"><semantics> <mrow> <mi>y</mi> <mo>=</mo> <mn>0.3519</mn> <mi>x</mi> </mrow> </semantics></math> through the origin is also shown (as the dotted line) along with the coefficient of determination (<math display="inline"><semantics> <msup> <mi>R</mi> <mn>2</mn> </msup> </semantics></math>).</p>
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<p>The dimensionless normalized variance in energy, <math display="inline"><semantics> <mrow> <mrow> <mo>(</mo> <mn>12</mn> <mo>/</mo> <msup> <mi>q</mi> <mn>2</mn> </msup> <msup> <mi>v</mi> <mn>2</mn> </msup> <mo>)</mo> </mrow> <mfenced separators="" open="&#x2329;" close="&#x232A;"> <msup> <mrow> <mo>(</mo> <mo>Δ</mo> <mi>U</mi> <mo>)</mo> </mrow> <mn>2</mn> </msup> </mfenced> <mo>=</mo> <mn>1</mn> <mo>+</mo> <mn>3</mn> <msup> <mo form="prefix">csc</mo> <mn>2</mn> </msup> <mrow> <mo>(</mo> <mrow> <mi>π</mi> <msub> <mi>z</mi> <mn>0</mn> </msub> </mrow> <mo>/</mo> <mi>a</mi> <mo>)</mo> </mrow> </mrow> </semantics></math>, from Equation (<a href="#FD8-physics-06-00070" class="html-disp-formula">8</a>) as a function of the location within the cavity <span class="html-italic">z</span> nm for a cavity of width <math display="inline"><semantics> <mrow> <mi>a</mi> <mo>=</mo> <mn>50</mn> </mrow> </semantics></math> nm. The variance increases without bound at the locations of the plates, <math display="inline"><semantics> <mrow> <mi>z</mi> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math> nm and <math display="inline"><semantics> <mrow> <mi>z</mi> <mo>=</mo> <mn>50</mn> </mrow> </semantics></math> nm.</p>
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<p>Normalized variance in energy for cavities of width for <math display="inline"><semantics> <mrow> <mi>a</mi> <mo>=</mo> <mn>33</mn> </mrow> </semantics></math> nm (black dashed) and <math display="inline"><semantics> <mrow> <mi>a</mi> <mo>=</mo> <mn>1100</mn> </mrow> </semantics></math> nm (in red). Near the origin, the variances are almost identical.</p>
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<p>Fractional difference in variance for optical cavities of width 33 nm and 1100 nm, corresponding to data in <a href="#physics-06-00070-f004" class="html-fig">Figure 4</a>. The fractional difference is calculated as the ratio of the difference of the variances at 33 and 1100 nm to the variance at 33 nm.</p>
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16 pages, 7702 KiB  
Article
Fabrication and Characterization of Fe-Doped SnSe Flakes Using Chemical Vapor Deposition
by Florinel Sava, Claudia Mihai, Angel-Theodor Buruiana, Amelia Elena Bocirnea and Alin Velea
Crystals 2024, 14(9), 790; https://doi.org/10.3390/cryst14090790 - 6 Sep 2024
Viewed by 405
Abstract
The development of two-dimensional (2D) materials has gained significant attention due to their unique properties and potential applications in advanced electronics. This study investigates the fabrication and characterization of Fe-doped SnSe semiconductors using an optimized chemical vapor deposition (CVD) method. Fe doping was [...] Read more.
The development of two-dimensional (2D) materials has gained significant attention due to their unique properties and potential applications in advanced electronics. This study investigates the fabrication and characterization of Fe-doped SnSe semiconductors using an optimized chemical vapor deposition (CVD) method. Fe doping was achieved by dissolving FeCl3 in deionized water, applying it to SnSe powder, and conducting vacuum drying followed by high-temperature CVD at 820 °C. Structural and morphological properties were characterized using optical microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX). Results revealed differently shaped flakes, including rectangles, discs and wires, influenced by Fe content. Micro-Raman spectroscopy showed significant vibrational mode shifts, indicating structural changes. X-ray photoelectron spectroscopy (XPS) confirmed the presence of Sn-Se and Fe-Se bonds. Electrical characterization of the memristive devices showed stable switching between high- and low-resistance states, with a threshold voltage of 1.6 V. These findings suggest that Fe-doped SnSe is a promising material for non-volatile memory and neuromorphic computing applications. Full article
(This article belongs to the Section Materials for Energy Applications)
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<p>Synthesis recipe. (<b>a</b>) Schematic representation of the PVT system used for the synthesis of Fe-doped SnSe flakes, (<b>b</b>) the programmed furnace temperature during the entire process.</p>
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<p>Optical images of Fe-doped SnSe flakes (800× magnification) of rectangular shapes and different sizes obtained using the source materials with composition no. 1. The scale bar in each image is 20 µm.</p>
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<p>Optical images of Fe-doped SnSe objects (400× magnification) of different shapes and sizes formed using source materials with composition no. 2. Different shaped-flakes such as rectangles, stripes and wires are shown in (<b>a</b>–<b>d</b>). The scale bar in each image is 20 µm.</p>
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<p>Optical images of Fe-doped SnSe flakes (800× magnification) of different shapes and sizes formed using source material with composition no. 3. The scale bar in each image is 20 µm.</p>
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<p>Lateral size distribution of Fe-doped SnSe flakes obtained from compositions no. 1, no. 2, and no. 3. The histogram shows the count of flakes within specific lateral size ranges for each composition.</p>
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<p>SEM image and elemental distribution maps obtained by EDX of a disc-shaped Fe-doped SnSe flakes. The scale bar is 8 µm.</p>
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<p>Micro-Raman spectra recorded on different areas of Fe-doped SnSe (<b>a</b>) disc-shaped (<b>i</b>–<b>iv</b>) and (<b>b</b>) rectangular shaped (<b>i</b>–<b>iv</b>) flakes obtained on the SiO<sub>2</sub>/Si substrate using source material composition no. 3. Optical microscopy images of the investigated flakes and spots are shown next to each graph. Raman spectrum recorded on an undoped SnSe flake (<b>v</b>) is included in each panel, for comparison.</p>
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<p>XPS analysis results for the lines of interest: (<b>a</b>) Sn 3d, (<b>b</b>) Se 3d, (<b>c</b>) Fe 2p (overlapping with Sn 3p<sup>3/2</sup>). The Fe2p spectrum is also represented on top, in purple, for a better visualization of the difference between the fit line and the Sn 3p<sup>3/2</sup> component. (<b>d</b>) O 1s.</p>
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<p>Current–voltage (I-V) characteristics of one of the Fe-doped SnSe memristive devices. The current is represented in absolute value. Initial low-resistance state (i), followed by high-resistance state after reset at 1.6 V (ii) and (iii), and set to low-resistance state at −1.6 V (iv). The median cycle is evidenced in bold. Inset shows the optical image of the memristive device, with a scale bar of 20 µm.</p>
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13 pages, 2507 KiB  
Article
Controllable Preparation of Fused Silica Micro Lens Array through Femtosecond Laser Penetration-Induced Modification Assisted Wet Etching
by Kaijie Cheng, Ji Wang, Guolong Wang, Kun Yang and Wenwu Zhang
Materials 2024, 17(17), 4231; https://doi.org/10.3390/ma17174231 - 27 Aug 2024
Viewed by 365
Abstract
As an integrable micro-optical device, micro lens arrays (MLAs) have significant applications in modern optical imaging, new energy technology, and advanced displays. In order to reduce the impact of laser modification on wet etching, we propose a technique of femtosecond laser penetration-induced modification-assisted [...] Read more.
As an integrable micro-optical device, micro lens arrays (MLAs) have significant applications in modern optical imaging, new energy technology, and advanced displays. In order to reduce the impact of laser modification on wet etching, we propose a technique of femtosecond laser penetration-induced modification-assisted wet etching (FLIPM-WE), which avoids the influence of previous modification layers on subsequent laser pulses and effectively improves the controllability of lens array preparation. We conducted a detailed study on the effects of the laser single pulse energy, pulse number, and hydrofluoric acid etching duration on the morphology of micro lenses and obtained the optimal process parameters. Ultimately, two types of fused silica micro lens arrays with different focal lengths but the same numerical aperture (NA = 0.458) were fabricated using the FLPIM-WE technology. Both arrays exhibited excellent geometric consistency and surface quality (Ra~30 nm). Moreover, they achieved clear imaging at various magnifications with an adjustment range of 1.3×~3.0×. This provides potential technical support for special micro-optical systems. Full article
(This article belongs to the Special Issue Cutting Processes for Materials in Manufacturing)
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<p>Experimental setup and method. (<b>a</b>) Steps in the fabrication of micro lens array. Step 1: using femtosecond laser-induced modification, step 2: place the modified sample in HF acid solution for ultrasonic-assisted wet etching, step 3: surface cleaning of MLA, the illustration pointed to by the black arrow shows a vertical-sectional schematic of the morphology of the microlens array; (<b>b</b>) schematic diagram of device femtosecond laser-induced modification of fused silica; (<b>c</b>) comparison between penetration FLPIM method and traditional top-down modification method.</p>
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<p>Influence of laser parameters on micro modified hole dimensions. (<b>a</b>) Variation in the depth of the modified holes; (<b>b</b>) variation in major axis length of the modified holes; (<b>c</b>) variation in minor axis length of the modified holes; (<b>d</b>) variation in depth-to-diameter ratio of the modified holes.</p>
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<p>Morphological changes of micro lens under different HF solution etching times. (<b>a</b>) 0 min; (<b>b</b>) 60 min; (<b>c</b>) 120 min; (<b>d</b>) 150 min, scale bar in <a href="#materials-17-04231-f003" class="html-fig">Figure 3</a>a,b is 10 μm; (<b>e</b>) variation in micro lens contour profiles with the etching time.</p>
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<p>Controlled fabrication of micro lens profiles. (<b>a</b>) Profile curves of micro lens fabricated under different pulse numbers; (<b>b</b>) depth and diameter of the micro lens fabricated under different pulse numbers. The black arrow represents the depth curve of the left coordinate axis, and the red arrow represents the diameter curve of the right coordinate axis; (<b>c</b>–<b>g</b>) three-dimensional profiles of micro lens fabricated under different pulse numbers: (<b>c</b>) 20 pulses; (<b>d</b>) 40 pulses; (<b>e</b>) 60 pulses; (<b>f</b>) 80 pulses; (<b>g</b>) 100 pulses.</p>
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<p>MLA schematics. (<b>a</b>) Micro lens array fabricated with a single pulse energy of 1.39 μJ and 60 pulses, scale bar: 20 μm; (<b>b</b>) micro lens array fabricated with a single pulse energy of 1.89 μJ and 80 pulses, scale bar: 20 μm; (<b>c</b>) profiles of the two micro lens arrays. The red curve represents the profile measurement result of the micro lenses within the red box in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>a. The gray curve represents the profiles measurement result of the micro lenses within the gray box in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>b; (<b>d</b>,<b>e</b>) three-dimensional views of individual micro lens structures from the two micro lens arrays.</p>
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<p>Imaging performance testing of the two MLAs shown in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>a,b. (<b>a</b>) Optical path diagram of the imaging analysis system. The system is equipped with optional imaging objectives; (<b>b</b>,<b>c</b>) place the MLA shown in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>a,b in the imaging analysis system, respectively. The CCD imaging results without the mask using an imaging objective of 20×. The scales are 20 μm; (<b>d1</b>–<b>d3</b>) CCD imaging results of the MLA shown in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>a after inserting the mask N. The objective lenses used are 20×, 20×, and 50× in sequence. Among them, <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>d3</b>) is the imaging pattern obtained by moving the mask upwards based on <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>d2</b>). (<b>e1</b>–<b>e3</b>) CCD imaging results under the MLA shown in <a href="#materials-17-04231-f005" class="html-fig">Figure 5</a>b using the same testing method, corresponding to <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>d1</b>)–(<b>d3</b>). The scales in <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>d1</b>,<b>e1</b>) are 20 μm. The scales in <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>d2</b>,<b>d3</b>) and <a href="#materials-17-04231-f006" class="html-fig">Figure 6</a>(<b>e2</b>,<b>e3</b>) are 20 μm.</p>
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13 pages, 6968 KiB  
Article
Improving Surface Antimicrobial Performance by Coating Homogeneous PDA-Ag Micro–Nano Particles
by Shuilin Wang, Fanping Meng and Zhimin Cao
Coatings 2024, 14(7), 887; https://doi.org/10.3390/coatings14070887 - 16 Jul 2024
Viewed by 891
Abstract
Implants and other medical devices are prone to bacterial infections on their surface due to bacterial attachment and biofilm formation. In this study, silver nanoparticles were generated in situ onto regulated synthesized polydopamine particles, and the optimal amount of silver nitrate was determined. [...] Read more.
Implants and other medical devices are prone to bacterial infections on their surface due to bacterial attachment and biofilm formation. In this study, silver nanoparticles were generated in situ onto regulated synthesized polydopamine particles, and the optimal amount of silver nitrate was determined. Composite micro–nano particles were then deposited on a titanium alloy surface. X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy were used to confirm that the titanium alloy surface was successfully coated with PDA-Ag. Scanning electron microscopy, transmission electron microscopy, and three-dimensional optical profilometry were utilized to analysis the morphology of the micro–nano particles and the surface morphology after deposition. The diameters of the polydopamine particles and silver nanoparticles were 150 nm and 25 nm, respectively. The surface roughness values decreased from 0.357 μm to 25.253 μm because of the coated PDA-Ag. Morphology and chemical composition analyses of the modified surface indicated that the PDA-Ag particles were uniformly bonded to the substrate surface. Antimicrobial assays illustrated that the PDA-Ag-modified surface possessed resistance against Escherichia coli and Staphylococcus aureus attachment, with an effectiveness of 96.14 and 85.78%, respectively. This work provides a new strategy and theoretical basis for tackling medical-related surface infections caused by bacterial adhesion. Full article
(This article belongs to the Section Bioactive Coatings and Biointerfaces)
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<p>A schematic of PDA-Ag formation and the covalent assembly of PDA-Ag on TC4. (<b>a</b>) Preparation process diagram of TC4@PDA-Ag; (<b>b</b>) The actual pictures of TC4, TC4-PDA and TC4@PDA-Ag; (<b>c</b>) The reaction principle diagram of PDA-Ag 2.4. Characterization of TC4-PDA-Ag.</p>
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<p>SEM images of PDA (<b>a</b>,<b>b</b>) and PDA-Ag (<b>c</b>,<b>d</b>) obtained after a reaction time of 24 h (<b>a</b>,<b>c</b>) and 48 h (<b>b</b>,<b>d</b>).</p>
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<p>Optimization of PDA-Ag preparation at different silver nitrate concentrations. (<b>a</b>) 0.8 mg/mL; (<b>b</b>) 1.6 mg/mL; (<b>c</b>) 8 mg/mL; (<b>d</b>) 80 mg/mL.</p>
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<p>(<b>a</b>) TEM images and particle size analysis of PDA-Ag; (<b>b</b>) enlarged image from (<b>a</b>).</p>
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<p>(<b>a</b>) SEM image of TC4@PDA-Ag; (<b>b</b>) enlarged image from (<b>a</b>).</p>
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<p>SEM and EDS images of TC4@PDA-Ag. (<b>a</b>) SEM image; (<b>b</b>) element C; (<b>c</b>) element N; (<b>d</b>) element O; (<b>e</b>) element Ag; (<b>f</b>) EDS spectra.</p>
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<p>(<b>a</b>) Full XPS spectra of TC4@PDA-Ag and TC4@PDA; (<b>b</b>) Ag <span class="html-italic">3d</span> peaks, (<b>c</b>) N <span class="html-italic">1s</span> peaks, and (<b>d</b>) O <span class="html-italic">1s</span> peaks of TC4@PDA-Ag.</p>
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<p>The 3D optical profiler images of TC4 (<b>a</b>) and TC4@PDA-Ag (<b>b</b>); 1: main images; 2: 3D images; 3: X-axis profile; 4: Y-axis profile.</p>
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<p>Bacterial plate counting and anti-biofilm capacity of the samples. (<b>a</b>) TC4 treated with <span class="html-italic">E. coli</span>; (<b>b</b>) TC4@PDA-Ag treated with <span class="html-italic">E. coli</span>; (<b>c</b>) TC4 treated with <span class="html-italic">S. aureus</span>; (<b>d</b>) TC4@PDA-Ag treated with <span class="html-italic">S. aureus</span>; (<b>e</b>) Acetic acid elution solution after CV staining; (<b>f</b>) OD590nm analysis of biofilm eluent.** <span class="html-italic">p</span> &lt; 0.001, very significant.</p>
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<p>CLSM images of surfaces with attached bacteria. (<b>a</b>) <span class="html-italic">E. coli</span> on TC4; (<b>b</b>) <span class="html-italic">S. aureu</span>s on TC4; (<b>c</b>) <span class="html-italic">E. coli</span> on TC4@PDA-Ag; (<b>d</b>) <span class="html-italic">S. aureus</span> on TC4@PDA-Ag.</p>
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<p>SEM images of surfaces with attached bacteria. (<b>a</b>): <span class="html-italic">S. aureu</span>s on TC4; (<b>b</b>): <span class="html-italic">E. coli</span> on TC4; (<b>c</b>): <span class="html-italic">S. aureus</span> on TC4@PDA-Ag; (<b>d</b>): <span class="html-italic">E. coli</span> on TC4@PDA-Ag.</p>
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9 pages, 2034 KiB  
Article
Anisotropic Optical Response of Ti-Doped VO2 Single Crystals
by Salvatore Macis, Lorenzo Mosesso, Annalisa D’Arco, Andrea Perucchi, Paola Di Pietro and Stefano Lupi
Materials 2024, 17(13), 3121; https://doi.org/10.3390/ma17133121 - 25 Jun 2024
Viewed by 821
Abstract
This study delves into the effects of titanium (Ti) doping on the optical properties of vanadium dioxide (VO2), a material well known for its metal–to–insulator transition (MIT) near room temperature. By incorporating Ti into VO2’s crystal lattice, we aim [...] Read more.
This study delves into the effects of titanium (Ti) doping on the optical properties of vanadium dioxide (VO2), a material well known for its metal–to–insulator transition (MIT) near room temperature. By incorporating Ti into VO2’s crystal lattice, we aim to uncover the resultant changes in its physical properties, crucial for enhancing its application in smart devices. Utilizing polarized infrared micro–spectroscopy, we examined TixV1−xO2 single crystals with varying Ti concentrations (x = 0.059, x = 0.082, and x = 0.187) across different crystal phases (the conductive rutile phase and insulating monoclinic phases M1 and M2) from the far–infrared to the visible spectral range. Our findings reveal that Ti doping significantly influences the phononic spectra, introducing absorption peaks not attributed to pure VO2 or TiO2. This is especially notable with polarization along the crystal growth axis, mainly in the x = 0.187 sample. Furthermore, we demonstrate that the electronic contribution to optical conductivity in the metallic phase exhibits strong anisotropy, higher along the c axis than the a–b plane. This anisotropy, coupled with the progressive broadening of the zone center infrared active phonon modes with increasing doping, highlights the complex interplay between structural and electronic dynamics in doped VO2. Our results underscore the potential of Ti doping in fine-tuning VO2’s electronic and thermochromic properties, paving the way for its enhanced application in optoelectronic devices and technologies. Full article
(This article belongs to the Section Advanced Materials Characterization)
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<p>Reflectance spectra obtained from polarized measurements on single crystals with different Ti dopings from x = 0.059 to x = 0.187. The left column shows measurements with polarization parallel (perpendicular) to the growth axis, C<sub><span class="html-italic">R</span></sub>, and the right column shows measurements with polarization perpendicular to that. It is noticeable that the reflectivity of the rutile phase (blue lines) decreases as the doping increases (see text). As discussed previously, the monoclinic M1 phase is absent in the sample with x = 0.187.</p>
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<p>Real part of the optical conductivity of Ti<sub><span class="html-italic">x</span></sub>V<sub>1−<span class="html-italic">x</span></sub>O<sub>2</sub> single crystals in the R phase obtained with polarization (<b>a</b>) parallel and (<b>b</b>) orthogonal to the growth axis, <math display="inline"><semantics> <msub> <mi>c</mi> <mi>R</mi> </msub> </semantics></math>. Brown, orange, and yellow lines denote Ti doping with x = 0.059, x = 0.082, and x = 0.187, respectively. (<b>c</b>) Difference between the real part of the optical conductivities obtained with parallel and orthogonal polarization under fixed doping, as defined in Equation (<a href="#FD1-materials-17-03121" class="html-disp-formula">1</a>).</p>
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<p>Imaginary part of the dielectric function of Ti<sub><span class="html-italic">x</span></sub>V<sub>1−<span class="html-italic">x</span></sub>O<sub>2</sub> single crystals in the M1 phase, with polarization (<b>a</b>–<b>c</b>) parallel and (<b>d</b>–<b>f</b>) orthogonal to the growth axis, <math display="inline"><semantics> <msub> <mover accent="true"> <mi>c</mi> <mo>→</mo> </mover> <mi>R</mi> </msub> </semantics></math>. Each black line denotes the total <math display="inline"><semantics> <mrow> <msub> <mi>ϵ</mi> <mn>2</mn> </msub> <mrow> <mo>(</mo> <mi>ω</mi> <mo>)</mo> </mrow> </mrow> </semantics></math>, while colored sections represent single phononic modes. <math display="inline"><semantics> <mrow> <msub> <mi>ϵ</mi> <mn>2</mn> </msub> <mrow> <mo>(</mo> <mi>ω</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> presented in panels (<b>a</b>,<b>d</b>) are included for samples with x = 0 obtained from reference [<a href="#B9-materials-17-03121" class="html-bibr">9</a>].</p>
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<p>Imaginary part of the dielectric function of Ti<sub><span class="html-italic">x</span></sub>V<sub>1−<span class="html-italic">x</span></sub>O<sub>2</sub> single crystals in the M2 phase, with polarization (<b>a</b>–<b>c</b>) parallel and (<b>d</b>–<b>f</b>) orthogonal to the growth axis. Each black line denotes the total <math display="inline"><semantics> <mrow> <msub> <mi>ϵ</mi> <mn>2</mn> </msub> <mrow> <mo>(</mo> <mi>ω</mi> <mo>)</mo> </mrow> </mrow> </semantics></math>, while colored areas represent single phononic modes. The vertical scale is set to 100 cm<sup>−1</sup> to better show the low-intensity phonons.</p>
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12 pages, 1425 KiB  
Article
Increasing Optical Path Lengths in Micro-Fluidic Devices Using a Multi-Pass Cell
by Victor Argueta-Diaz, McKenna Owens and Ahmed Al Ramadan
Micromachines 2024, 15(7), 820; https://doi.org/10.3390/mi15070820 - 25 Jun 2024
Viewed by 886
Abstract
This study presents a novel absorption cell with a circular geometry that can be integrated into microfluidic devices for optical spectroscopy applications. The absorption cell is made of PDMS/SU8 and offers an optical path length that is 8.5 times its diameter, resulting in [...] Read more.
This study presents a novel absorption cell with a circular geometry that can be integrated into microfluidic devices for optical spectroscopy applications. The absorption cell is made of PDMS/SU8 and offers an optical path length that is 8.5 times its diameter, resulting in a significant increase in the sensitivity of the measurements. Overall, this design provides a reliable and efficient solution for optical spectroscopy in microfluidic systems, enabling the precise detection and analysis of small quantities of analytes. Full article
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<p>Top view of proposed designs for a circular multi-pass cell. (<b>a</b>) both input and output ports are on the same side and their optical path length is defined by Equation (<a href="#FD2-micromachines-15-00820" class="html-disp-formula">2</a>), in (<b>b</b>) input and output ports are on the opposite side allowing for an easier experimental implementation, although the optical path length is reduced by half. The PDMS layer is not shown.</p>
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<p>Ray optic simulation. The optical path can be adjusted by changing the release angle and size of the inner ring. (<b>a</b>) Shows an OPL of 8.4× with a release angle of 65 degrees. (<b>b</b>) Shows an OPL of 11× with a release angle of 48 degrees.</p>
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<p>Fabricated multi-pass cell. The figure shows the multi-pass-cell fabricated on a silicon wafer before adding the top PDMS layer.</p>
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<p>Cell fabrication process. SU8 is used as the waveguide material; the substrate can be glass, PDMS, or silicon.</p>
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<p>The experimental setup. The figure shows a light source illuminating a microscope objective, the multi-pass cell on a translation stage, and a spectrometer.</p>
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<p>The figure illustrates a comparison of the absorption characteristics of alcohol and water when measured using our multi-pass device and a cuvette. The data from the cuvette measurements are represented by dotted lines, providing a reference for comparison. The y-axis of the graph shows the normalized absorption. Different peaks correspond to absorption from silicon, SU8, PDMS, water, and ethanol.</p>
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<p>Transmission loss at 650 nm. Trend line calculated using linear least square. average STDEV of ±0.047 dB.</p>
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13 pages, 6143 KiB  
Article
Design of an Electromagnetic Micro Mirror Driving System for LiDAR
by Jie Chen, Haiqiang Zhang, Zhongjin Zhang and Wenjie Yan
Sensors 2024, 24(12), 3969; https://doi.org/10.3390/s24123969 - 19 Jun 2024
Viewed by 637
Abstract
Electromagnetic micro mirrors are in great demand for light detection and ranging (LiDAR) applications due to their light weight and low power consumption. The driven frequency of electromagnetic micro mirrors is very important to their performance and consumption. An electromagnetic micro mirror system [...] Read more.
Electromagnetic micro mirrors are in great demand for light detection and ranging (LiDAR) applications due to their light weight and low power consumption. The driven frequency of electromagnetic micro mirrors is very important to their performance and consumption. An electromagnetic micro mirror system is proposed in this paper. The model of the system was composed of a micro mirror, an integrated piezoresistive (PR) sensor, and a driving circuit was developed. The twisting angle of the mirror edge was monitored by an integrated PR sensor, which provides frequency feedback signals, and the PR sensor has good sensitivity and linearity in testing, with a maximum of 24.45 mV/deg. Stable sinusoidal voltage excitation and frequency tracking was realized via a phase-locked loop (PLL) in the driving circuit, with a frequency error within 10 Hz. Compared with other high-cost solutions using PLL circuits, it has greater advantages in power consumption, cost, and occupied area. The mechanical and piezoresistive properties of micro mirrors were performed in ANSYS 19.2 software. The behavior-level models of devices, circuits, and systems were validated by MATLAB R2023a Simulink, which contributes to the research on the large-angle deflection and low-power-consumption drive of the electromagnetic micro mirror. The maximum optical scan angle reached 37.6° at 4 kHz in the behavior-level model of the micro mirror. Full article
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<p>The block of the electromagnetic micro mirror with an integrated PR sensor.</p>
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<p>The electromagnetic micro mirror driven by a sinusoidal voltage excitation in the static magnetic field.</p>
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<p>The finite element simulation of the electromagnetic micro mirror with an integrated PR sensor in ANSYS: (<b>a</b>) the model of the electromagnetic micro mirror with an integrated PR sensor; (<b>b</b>) the torsion displacement and voltage output simulated in the mechanical–piezoresistive coupling field analysis.</p>
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<p>Schematic diagram of the structure of PR sensor.</p>
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<p>The simple scheme of the PLL applicated in the driving circuit.</p>
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<p>The single-degree-of-freedom dynamic model of micro mirror with PR sensor established in MATLAB Simulink.</p>
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<p>The bode plots of the micro mirrors established in MATLAB Simulink (<b>a</b>) the magnitude gains of the vacuum micro mirror; (<b>b</b>) the magnitude gains of the micro mirror in the air.</p>
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<p>The impulse response of the micro mirrors: (<b>a</b>) the impulse response of the model with infinite Q-factor; (<b>b</b>) the impulse response of the model with a Q-factor of 100.</p>
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<p>The analysis of the forced vibration: (<b>a</b>) the displacement for the micro mirror excited by a sinusoidal voltage of 3800 Hz; (<b>b</b>) the displacement for the micro mirror excited by a sinusoidal voltage of 4000 Hz.</p>
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<p>The behavior model of the micro mirror driving system established in MATLAB Simulink.</p>
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<p>Voltage-controlled oscillator model established in MATLAB Simulink.</p>
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<p>Low pass filter model established in MATLAB Simulink.</p>
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<p>The result plots in MATLAB Simulink: (<b>a</b>) the square wave generated by the PD; (<b>b</b>) the control voltage filtered by LPF for the VCO; (<b>c</b>) the twisting displacement of the micro mirror.</p>
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<p>(<b>a</b>) Schematic diagram of PR sensor; (<b>b</b>) lithographic PR sensor under metallographic microscope (50×).</p>
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<p>Measured PR sensor output voltage.</p>
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<p>Experiment: (<b>a</b>) micro mirror testing system; (<b>b</b>) micro mirror PCB.</p>
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<p>The plot of output voltage of the driving circuit.</p>
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<p>(<b>a</b>) The process of gradually changing the PD output and <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>c</mi> <mi>t</mi> <mi>r</mi> <mi>l</mi> </mrow> </msub> </mrow> </semantics></math>; (<b>b</b>) the process of gradually changing the output signal and excitation signal.</p>
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11 pages, 6000 KiB  
Article
Fabrication of Large-Area Nanostructures Using Cross-Nanoimprint Strategy
by Yujie Zhan, Liangui Deng, Wei Dai, Yongxue Qiu, Shicheng Sun, Dizhi Sun, Bowen Hu and Jianguo Guan
Nanomaterials 2024, 14(12), 998; https://doi.org/10.3390/nano14120998 - 8 Jun 2024
Viewed by 1031
Abstract
Nanostructures with sufficiently large areas are necessary for the development of practical devices. Current efforts to fabricate large-area nanostructures using step-and-repeat nanoimprint lithography, however, result in either wide seams or low efficiency due to ultraviolet light leakage and the overflow of imprint resin. [...] Read more.
Nanostructures with sufficiently large areas are necessary for the development of practical devices. Current efforts to fabricate large-area nanostructures using step-and-repeat nanoimprint lithography, however, result in either wide seams or low efficiency due to ultraviolet light leakage and the overflow of imprint resin. In this study, we propose an efficient method for large-area nanostructure fabrication using step-and-repeat nanoimprint lithography with a composite mold. The composite mold consists of a quartz support layer, a soft polydimethylsiloxane buffer layer, and multiple intermediate polymer stamps arranged in a cross pattern. The distance between the adjacent stamp pattern areas is equal to the width of the pattern area. This design combines the high imprinting precision of hard molds with the uniform large-area imprinting offered by soft molds. In this experiment, we utilized a composite mold consisting of three sub-molds combined with a cross-nanoimprint strategy to create large-area nanostructures measuring 5 mm × 30 mm on a silicon substrate, with the minimum linewidth of the structure being 100 nm. Compared with traditional step-and-flash nanoimprint lithography, the present method enhances manufacturing efficiency and generates large-area patterns with seam errors only at the micron level. This research could help advance micro–nano optics, flexible electronics, optical communication, and biomedicine studies. Full article
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<p>(<b>a</b>) Side-view and top-view of original mold 1 and composite mold 1; the cross-nanoimprint strategy with composite mold 1 in the lateral direction, which presents (<b>b</b>) the first nanoimprinting and etching results; and (<b>c</b>) the second cross-nanoimprinting and etching results; (<b>d</b>) the fabrication strategy of larger area nanostructures.</p>
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<p>Optical image of the original mold, along with corresponding scanning electron microscopy images of various regions.</p>
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<p>Scheme of the (<b>a</b>) IPSs and (<b>b</b>) composite mold fabrication process; (<b>c</b>) counterpoint system and displacement rotating platform; (<b>d</b>) optical image of the composite mold with three IPSs, along with corresponding scanning electron microscopy images of various regions.</p>
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<p>(<b>a</b>) Scheme of the first nanoimprinting and etching process; (<b>b</b>) optical image of the nanoimprinted silicon pattern, along with corresponding scanning electron microscopy images of various regions.</p>
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<p>SEM images of the sidewall structure of the (<b>a</b>) TU7 imprint resist and the (<b>b</b>) silicon substrate (the residual TU7 imprint resist remaining on the substrate).</p>
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<p>(<b>a</b>) Scheme of the second cross-nanoimprinting and etching process; (<b>b</b>) large-area nanoimprinted silicon pattern measuring 5 mm × 30 mm; (<b>c</b>,<b>d</b>) the results of the hole pattern transferred onto the silicon substrate after the first and second nanoimprinting and etching processes, respectively; (<b>e</b>,<b>f</b>) the seams at the edge and in the middle, respectively, between the patterns of the first and the second nanoimprinting and etching examples.</p>
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11 pages, 5833 KiB  
Article
Sensing Based on Plasmon-Induced Transparency in H-Shaped Graphene-Based Metamaterials
by Xiongxiong Wu, Jiani Chen, Shaolong Wang, Yang Ren, Yanning Yang and Zhihui He
Nanomaterials 2024, 14(12), 997; https://doi.org/10.3390/nano14120997 - 8 Jun 2024
Viewed by 830
Abstract
Graphene can support surface plasmon polaritons (SPPs) in the terahertz band, and graphene SPP sensors are widely used in the field of terahertz micro- and nano-optical devices. In this paper, we propose an H-shaped graphene metasurface and investigate the plasmon-induced transparency (PIT) phenomenon [...] Read more.
Graphene can support surface plasmon polaritons (SPPs) in the terahertz band, and graphene SPP sensors are widely used in the field of terahertz micro- and nano-optical devices. In this paper, we propose an H-shaped graphene metasurface and investigate the plasmon-induced transparency (PIT) phenomenon in the proposed structure using the finite-difference time-domain (FDTD) method. Our results show that the Fermi energy levels, as well as certain shape parameters, can effectively modulate the PIT phenomenon in the proposed structure. Interestingly, changing some of these shape parameters can excite two dips into three. In terms of sensing performance, the maximum values of sensitivity and figure of merit (FOM) are 1.4028 THz/RIU and 17.97, respectively. These results offer valuable guidance for the use of terahertz optical graphene SPP sensors. Full article
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<p>(<b>a</b>) The 3D schematic diagram of the periodic structure. (<b>b</b>) Schematic of unit cell, where <span class="html-italic">d</span><sub>1</sub> = 5 μm, <span class="html-italic">d</span><sub>2</sub> = 2.2 μm, <span class="html-italic">d</span><sub>3</sub> = 0.8 μm, <span class="html-italic">d</span><sub>4</sub> = 4.2 μm, <span class="html-italic">d</span><sub>5</sub> = 1.5 μm, and <span class="html-italic">d</span><sub>6</sub> = 4.5 μm.</p>
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<p>(<b>a</b>) Transmission spectra of graphene metasurface at a Fermi energy level of 1.0 eV, with the red solid line for the bright mode (Part 1), the blue solid line for the dark mode (Part 2), and the black solid line for the PIT (all parts). Figures (<b>b</b>–<b>d</b>) correspond to the electric field distributions at points (b), (c), and (d) labeled in figure (<b>a</b>), respectively.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">E<sub>f</sub></span> values. (<b>b</b>) The resonant frequencies of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span>. (<b>c</b>) The transmission of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span>.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">E<sub>f</sub></span><sub>1</sub> values. (<b>b</b>) The resonant frequencies of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span><sub>1</sub>. (<b>c</b>) The transmission of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span><sub>1</sub>.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">E<sub>f</sub></span><sub>2</sub> values. (<b>b</b>) The resonant frequencies of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span><sub>2</sub>. (<b>c</b>) The transmission of Dip1 and Dip2 with the varied Fermi energy <span class="html-italic">E<sub>f</sub></span><sub>2</sub>.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">d</span><sub>2</sub> values. (<b>b</b>) The resonant frequencies of Dip1 and Dip2 with the varied shape parameter <span class="html-italic">d</span><sub>2</sub>. (<b>c</b>) The transmission of Dip1 and Dip2 with the varied shape parameter <span class="html-italic">d</span><sub>2</sub>.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">d</span><sub>6</sub> values. (<b>b</b>) The resonant frequencies of Dip1 and Dip2 with the varied shape parameter <span class="html-italic">d</span><sub>6</sub>. Figure (<b>c</b>,<b>d</b>) correspond to the electric field distributions at the points (c) and (d) labeled in Figure (<b>a</b>), respectively.</p>
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<p>(<b>a</b>) Transmission spectra at different <span class="html-italic">d</span><sub>4</sub> values. Figure (<b>b</b>,<b>c</b>) correspond to the electric field distributions at points (b) and (c) labeled in figure (<b>a</b>), respectively.</p>
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<p>Transmission spectra at different refractive indices for the Fermi energy level of 1.0.</p>
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<p>Figure (<b>a</b>–<b>h</b>) show the FOM values corresponding to refractive indices of 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, and 2.0, respectively.</p>
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26 pages, 2503 KiB  
Article
Combined Control for a Piezoelectric Actuator Using a Feed-Forward Neural Network and Feedback Integral Fast Terminal Sliding Mode Control
by Eneko Artetxe, Oscar Barambones, Isidro Calvo, Asier del Rio and Jokin Uralde
Micromachines 2024, 15(6), 757; https://doi.org/10.3390/mi15060757 - 5 Jun 2024
Viewed by 769
Abstract
In recent years, there has been significant interest in incorporating micro-actuators into industrial environments; this interest is driven by advancements in fabrication methods. Piezoelectric actuators (PEAs) have emerged as vital components in various applications that require precise control and manipulation of mechanical systems. [...] Read more.
In recent years, there has been significant interest in incorporating micro-actuators into industrial environments; this interest is driven by advancements in fabrication methods. Piezoelectric actuators (PEAs) have emerged as vital components in various applications that require precise control and manipulation of mechanical systems. These actuators play a crucial role in the micro-positioning systems utilized in nanotechnology, microscopy, and semiconductor manufacturing; they enable extremely fine movements and adjustments and contribute to vibration control systems. More specifically, they are frequently used in precision positioning systems for optical components, mirrors, and lenses, and they enhance the accuracy of laser systems, telescopes, and image stabilization devices. Despite their numerous advantages, PEAs exhibit complex dynamics characterized by phenomena such as hysteresis, which can significantly impact accuracy and performance. The characterization of these non-linearities remains a challenge for PEA modeling. Recurrent artificial neural networks (ANNs) may simplify the modeling of the hysteresis dynamics for feed-forward compensation. To address these challenges, robust control strategies such as integral fast terminal sliding mode control (IFTSMC) have been proposed. Unlike traditional fast terminal sliding mode control methods, IFTSMC includes integral action to minimize steady-state errors, improving the tracking accuracy and disturbance rejection capabilities. However, accurate modeling of the non-linear dynamics of PEAs remains a challenge. In this study, we propose an ANN-based IFTSMC controller to address this issue and to enhance the precision and reliability of PEA positioning systems. We implement and validate the proposed controller in a real-time setup and compare its performance with that of a PID controller. The results obtained from real PEA experiments demonstrate the stability of the novel control structure, as corroborated by the theoretical analysis. Furthermore, experimental validation reveals a notable reduction in error compared to the PID controller. Full article
(This article belongs to the Special Issue Piezoelectric Devices and System in Micromachines)
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<p>Scheme of the software and hardware implementation.</p>
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<p>Hysteresis through a complete cycle.</p>
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<p>Control schemes for (<b>a</b>) the proposed ANN-based IFTSMC and (<b>b</b>) the PID controller.</p>
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<p>GRU layer information flow diagram.</p>
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<p>Real data vs. prediction errors.</p>
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<p>ANN prediction error.</p>
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<p>Tracking of a 1 Hz triangular signal for PI- and ANN-based IFTSMC.</p>
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<p>Zoom of the tracking of a 1 Hz triangular signal for PI- and ANN-based IFTSMC.</p>
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<p>Error of the tracking of a 1 Hz triangular signal for PI- and ANN-based IFTSMC.</p>
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<p>Tracking of a 1 Hz sinusoidal signal for PI- and ANN-based IFTSMC.</p>
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<p>Zoom of the tracking of a 1 Hz sinusoidal signal for PI- and ANN-based IFTSMC.</p>
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<p>Error of the tracking of a 1 Hz sinusoidal signal for PI- and ANN-based IFTSMC.</p>
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<p>Tracking of a 5 Hz triangular signal for PI- and ANN-based IFTSMC.</p>
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<p>Error of the tracking of a 5 Hz triangular signal for PI- and ANN-based IFTSMC.</p>
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<p>Tracking of a 5 Hz sinusoidal signal for PI- and ANN-based IFTSMC.</p>
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<p>Error of the tracking of a 5 Hz sinusoidal signal for PI- and ANN-based IFTSMC.</p>
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