Search Results (153)

The selectivity of the reactive ion etching of silicon using a negative electron resist AR-N 7520 mask was investigated. The selectivity dependencies on the fraction of SF₆ in the feeding gas and bias voltage were obtained. To understand the kinetics of passivation film formation and etching, the type and concentration of neutral particles were evaluated and identified using plasma optical emission spectroscopy. Electron temperature and electron density were measured by the Langmuir probe method to interpret the optical emission spectroscopy data. A high etching selectivity of 8.0 ± 1.8 was obtained for the etching process. The optimum electron beam exposure dose for defining the mask was 8200 pC/m at 30 keV. Full article

Photonic circuits find applications in biomedicine, manufacturing, quantum computing and communications. Photonic waveguides are crucial components, typically having cross-section orders of magnitude inferior when compared with other photonic components (e.g., optical fibers, light sources and photodetectors). Several light-coupling methods exist, consisting of either on-plane (e.g., adiabatic and end-fire coupling) or off-plane methods (e.g., grating and vertical couplers). The grating coupler is a versatile light-transference technique which can be tested at wafer level, not requiring specific fiber terminations or additional optical components, like lenses, polarizers or prisms. This study focuses on fully-etched grating couplers without a bottom reflector, made from hydrogenated amorphous silicon (a-Si:H), deposited over a silica substrate. Different coupler designs were tested, and of these we highlight two: the superimposition of two lithographic masks with different periods and an offset between them to create a random distribution and a technique based on the quadratic refractive-index variation along the device’s length. Results were obtained by 2D-FDTD simulation. The designed grating couplers achieve coupling efficiencies for the TE-like mode over −8 dB (mask overlap) and −3 dB (quadratic variation), at a wavelength of 1550 nm. The coupling scheme considers a 220 nm a-Si:H waveguide and an SMF-28 optical fiber. Full article

The high-efficiency preparation of large-area microstructures of optical materials and precision graphic etching technology is one of the most important application directions in the atomic and near-atomic-scale manufacturing industry. Traditional focused ion beam (FIB) and reactive ion etching (RIE) methods have limitations in precision and efficiency, hindering their application in automated mass production. The pulsed ion beam (PIB) method addresses these issues by enhancing ion beam deflection to achieve high-resolution material removal on a macro scale, which can reach the equivalent removal resolution of 6.4 × 10⁻⁴ nm. Experiments were conducted on a quartz sample (10 × 10 × 1 mm) with a specific pattern mask using the custom PIB processing device. The surface morphology, etching depth, and roughness were measured post-process. The results demonstrated that precise control over cumulative sputtering time yielded well-defined patterns with expected average etching depths and surface roughness. This confirms the PIB technique’s potential for precise atomic depth image transfer and its suitability for industrial automation, offering a significant advancement in microfabrication technology. Full article

Black GaAs nanotip arrays (NTs) with 3300 nm lengths were fabricated via self-masked plasma etching. We show, both experimentally and numerically, that these NTs, with three gradient refractive index layers, effectively suppress Fresnel reflections at the air–GaAs interface over a broad range of wavelengths. These NTs exhibit exceptional UV-Vis light absorption (up to 99%) and maintain high NIR absorption (33–60%) compared to bare GaAs. Moreover, possessing a graded layer with a low refractive index (n = 1.01 to 1.12), they achieve angular and polarization-independent antireflection properties exceeding 80° at 632.8 nm, aligning with perfect antireflective coating theory predictions. This approach is anticipated to enhance the performance of optoelectronic devices across a wide range of applications. Full article

Grayscale lithography (GSL) is an alternative approach to the standard binary lithography in MEMS fabrication, enabling the fabrication of complicated, arbitrary 3D structures on a wafer without the need for multiple masks and exposure steps. Despite its advantages, GSL’s effectiveness is highly dependent on controlled lab conditions, equipment consistency, and finely tuned photoresist (PR) exposure and etching processes. This works presents a thorough investigation of the challenges of GSL for silicon (Si) wafers and presents a detailed approach on how to minimize fabrication inaccuracies, aiming to replicate the intended design as closely as possible. Utilizing a maskless laser writer, all aspects of the GSL are analyzed, from photoresist exposure parameters to Si etching conditions. A practical application of GSL is demonstrated in the fabrication of 4-μm-deep $f$#/1 Si Fresnel lenses for long-wave infrared (LWIR) imaging (8–12 μm). The surface topography of a Fresnel lens is a good case to apply GSL, as it has varying shapes and size features that need to be preserved. The final fabricated lens profiles show a good match with the initial design, and demonstrate successful etching of coarse and fine features, and demonstrative images taken with an LWIR camera. Full article

The following study involved the utilization of dispersion polymerization to synthesize micron/nano-sized polystyrene (PS) spheres, which were then deposited onto a silicon substrate using the floating assembly method to form a long-range monolayer. Subsequently, dry etching techniques were utilized to create subwavelength structures. The adjustment of the stabilizer polyvinylpyrrolidone (PVP), together with changes in the monomer concentration, yielded PS spheres ranging from 500 nm to 5.6 μm in diameter. These PS spheres were suspended in a mixture of alcohol and deionized water before being arranged using the floating assembly method. The resulting tightly packed particle arrangement is attributed to van der Waals forces, Coulomb electrostatic forces between the PS spheres, and surface tension effects. The interplay of these forces was analyzed to comprehend the resulting structure. Dry etching, utilizing the PS spheres as masks, enabled the exploration of the effects of etching parameters on the resultant structures. Unlike traditional dry etching methods controlling RF power and etching gases, in the present study, we focused on adjusting the oxygen flow rate to achieve cylindrical, conical, and parabolic etched structures. Full article

Microfabrication technology with quartz crystals is gaining importance as the miniaturization of quartz MEMS devices is essential to ensure the development of portable and wearable electronics. However, until now, there have been no reports of dimension compensation for quartz device fabrication. Therefore, this paper studied the wet etching process of Z-cut quartz crystal substrates for making deep trench patterns using Au/Cr metal hard masks and proposed the first quartz fabrication dimension compensation strategy. The size effect of various sizes of hard mask patterns on the undercut developed in wet etching was experimentally investigated. Quartz wafers masked with initial vias ranging from 3 μm to 80 μm in width were etched in a buffered oxide etch solution (BOE, HF:NH₄F = 3:2) at 80 °C for prolonged etching (>95 min). It was found that a larger hard mask width resulted in a smaller undercut, and a 30 μm difference in hard mask width would result in a 17.2% increase in undercut. In particular, the undercuts were mainly formed in the first 5 min of etching with a relatively high etching rate of 0.7 μm/min (max). Then, the etching rate decreased rapidly to 27%. Furthermore, based on the etching width compensation and etching position compensation, new solutions were proposed for quartz crystal device fabrication. And these two kinds of compensation solutions were used in the fabrication of an ultra-small quartz crystal tuning fork with a resonant frequency of 32.768 kHz. With these approaches, the actual etched size of critical parts of the device only deviated from the designed size by 0.7%. And the pattern position symmetry of the secondary lithography etching process was improved by 96.3% compared to the uncompensated one. It demonstrated significant potential for improving the fabrication accuracy of quartz crystal devices. Full article

GH4169 alloy/Inconel 718 is extensively utilized in aerospace manufacturing due to its excellent high temperature mechanical properties. Micro-structuring on the workpiece surface can enhance its properties further. Through-mask electrochemical micromachining (TMEMM) is a promising and potential processing method for nickel-based superalloys. It can effectively solve the problem that traditional processing methods are difficult to achieve large-scale, high-precision and efficiency processing of surface micro-structure. This study explores the feasibility of electrochemical machining (ECM) for GH4169 using roll-print mask electrochemical machining with a linear cathode. Electrochemical dissolution characteristics of GH4169 alloy were analyzed in various electrolyte solutions and concentrations. Key parameters including cathode sizes, applied voltage and corrosion time were studied in the roll-print mask electrochemical machining. A qualitative model for micro-pit formation on GH4169 was established. Optimal parameters were determined through experiments: 300 μm mask hole and cathode size, 10 wt% NaNO₃ electrolyte, 12 V voltage, 6 s corrosion time. The results demonstrate that the micro-pits with a diameter of 402.3 μm, depth of 92.8 μm and etch factor (EF) of 1.81 show an excellent profile and localization. Full article

A high porosity micropore arrayed parylene membrane is a promising device that is used to capture circulating and exfoliated tumor cells (CTCs and ETCs) for liquid biopsy applications. However, its fabrication still requires either expensive equipment or an expensive process. Here, we report on the fabrication of high porosity (>40%) micropore arrayed parylene membranes through a simple reactive ion etching (RIE) that uses photoresist as the etching mask. Vertical sidewalls were observed in etched parylene pores despite the sloped photoresist mask sidewalls, which was found to be due to the simultaneous high DC-bias RIE induced photoresist melting and substrate pedestal formation. A theoretical model has been derived to illustrate the dependence of the maximum membrane thickness on the final pore-to-pore spacing, and it is consistent with the experimental data. A simple, yet accurate, low number (<50) cell counting method was demonstrated through counting cells directly inside a pipette tip under phase-contrast microscope. Membranes as thin as 3 μm showed utility for low number tumor cell capture, with an efficiency of 87–92%. Full article

This study presents a new design for a MEMS electrostatic speaker array with out-of-plane piston-like diaphragm displacement using a simplified silicon-on-insulator microfabrication process. The device comprises an array of parallel actuating membranes with small circular mechanically open but acoustically sealed apertures that enable controlled etching of the buried oxide to be released directly from the front side, but retain a high acoustic impedance acting as a flat membrane. This approach simplifies the microfabrication process, requiring only two lithography masks and increasing process tolerances. Preliminary experimental measurements validate the concept and demonstrate the electromechanical and acoustic performance compared with theoretical models. Full article

The high-performance determination of heavy metal ions (Cd²⁺) in water sources is significant for the protection of public health and safety. We have developed a novel sensor of nanograss boron and nitrogen co-doped diamond (NGBND) to detect Cd²⁺ using a simple method without any masks or reactive ion etching. The NGBND electrode is constructed based on the co-doped diamond growth mode and the removal of the non-diamond carbon (NDC) from the NGBND/NDC composite. Both the enlarged surface area and enhanced electrochemical performance of the NGBND film are achievable. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, cyclic voltammetry, electrochemical impedance spectroscopy, and differential pulse anodic stripping voltammetry (DPASV) were used to characterize the NGBND electrodes. Furthermore, we used a finite element numerical method to research the current density near the tip of NGBND. The NGBND sensor exhibits significant advantages for detecting trace Cd²⁺ via DPASV. A broad linear range of 1 to 100 μg L⁻¹ with a low detection limit of 0.28 μg L⁻¹ was achieved. The successful application of this Cd²⁺ sensor indicates considerable promise for the sensitive detection of heavy metal ions. Full article

Femtosecond laser material processing (FLMP) was used to make an X-ray mask in a 500 µm thick tungsten sheet without the use of any chemical etch methods. The laser produced an 800 nm wavelength at a 1 kHz repetition rate and a pulse width of 100 fs. The laser beam arrival at the tungsten sheet was synchronized to a computer numerically controlled (CNC) stage that allowed for motion in the XYZθ directions. The X-ray mask design was made using CAD/CAM software (Alphacam 2019 R1) and it consisted of linear, circular, and 45° angle features that covered an area of 10 mm × 10 mm. A total of 70 laser beam passes at a moderate laser energy of 605.94 J/cm² were used to make through-cut features into the tungsten sheet. The morphology of the top view (laser incident, LS) images showed cleaner and smoother cut edges relative to the bottom view (laser exit, LE) images. It was found that the size dimensions of the through-cut features on the LE surfaces were better aligned with the CAD dimensions than those of the LS surfaces. The focused laser beam produced inclined cut surfaces as the beam made the through cut from the LS to the LE of the tungsten sheet. The circular features at the LS surface deviated toward being oval-like on the LE surface, which could be compensated for in future CAD designs. The dependence of the CNC processing speed on the thickness of the etch depth was determined to have a third-order exponential decay relationship, thereby producing a theoretical model that will be useful for future investigators to predict the required experimental parameters needed to achieve a known etch depth in tungsten. This is the first study that has demonstrated the capability of using a femtosecond laser to machine through-cut an X-ray mask in a 500 µm thick tungsten sheet with no involvement of a wet etch or any other such supporting process. Full article

This study experimentally investigated the use of the chemical vapor etching method for silicon surface grooving for regular front deep metallic contact solar cell applications. The thickness of silicon wafers is a crucial parameter in the production of solar cells with front and back buried contacts, because silicon surface grooves result in a larger contact area, which in turn improves carrier collection and increases the collection probability for minority carriers. A simple, low-cost HNO₃/HF chemical vapor etching technique was used to create grooves on silicon wafers with the help of a highly effective anti-acid mask. The thick porous layer of powder that was produced was easily dissolved in water, leaving patterned grooved areas on the silicon substrate. A linear dependence was observed between the etched thickness and time, suggesting that the etching process followed a constant etch rate, something that is crucial for ensuring precise and reproducible etching results for the semiconductor and microfabrication industries. Moreover, by creating shorter pathways for charge carriers to travel to their respective contacts, front deep contacts minimize the overall distance they need to traverse and therefore reduce the chance of carrier recombination within the silicon material. As a result, the internal quantum efficiency of solar cells with front deep metallic contacts improved by 35% compared to mc-Si solar cells having planar contacts. The use of front deep contacts therefore represents a forward-looking strategy for improving the performance of silicon solar cells. Indeed, this innovative electrode configuration improves charge carrier collection, mitigates recombination losses, and ultimately leads to more efficient and effective solar energy conversion, which contributes to sustainable energy development in the areas of clean energy resources. Further work needs to be undertaken to develop energy sustainably and consider other clean energy resources. Full article

Glass microlens arrays (MLAs) have tremendous prospects in the fields of optical communication, sensing and high-sensitivity imaging for their excellent optical properties, high mechanical robustness and physicochemical stability. So far, glass MLAs are primarily fabricated using femtosecond laser modification assisted etching, in which the preparation procedure is time-consuming, with each concave-shaped microlens being processed using a femtosecond laser point by point. In this paper, a new method is proposed for implementing large-scale glass MLAs using glass particle sintering with the assistance of ultraviolet (UV) lithography. The glass particles are dispersed into the photoresist at first, and then immobilized as large-scaled micropillar arrays on quartz glass substrate using UV lithographing. Subsequently, the solidified photoresist is debinded and the glass particles are melted by means of sintering. By controlling the sintering conditions, the convex microlens will be self-assembled, attributed to the surface tension of the molten glass particles. Finally, MLAs with different focal lengths (0.12 to 0.2 mm) are successfully fabricated by utilizing different lithography masks. Meanwhile, we also present the optimization of the sintering parameter for eliminating the bubbles in the microlenses. The main factors that affect the focal length of the microlens and the image performance of the MLAs have been studied in detail. Full article

Single LiNbO₃ (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO₂ masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO. Full article