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Chips, Volume 3, Issue 2 (June 2024) – 6 articles

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20 pages, 2637 KiB  
Article
Survey of Security Issues in Memristor-Based Machine Learning Accelerators for RF Analysis
by Will Lillis, Max Cohen Hoffing and Wayne Burleson
Chips 2024, 3(2), 196-215; https://doi.org/10.3390/chips3020009 - 13 Jun 2024
Viewed by 884
Abstract
We explore security aspects of a new computing paradigm that combines novel memristors and traditional Complimentary Metal Oxide Semiconductor (CMOS) to construct a highly efficient analog and/or digital fabric that is especially well-suited to Machine Learning (ML) inference processors for Radio Frequency (RF) [...] Read more.
We explore security aspects of a new computing paradigm that combines novel memristors and traditional Complimentary Metal Oxide Semiconductor (CMOS) to construct a highly efficient analog and/or digital fabric that is especially well-suited to Machine Learning (ML) inference processors for Radio Frequency (RF) signals. Analog and/or hybrid hardware designed for such application areas follows different constraints from that of traditional CMOS. This paradigm shift allows for enhanced capabilities but also introduces novel attack surfaces. Memristors have different properties than traditional CMOS which can potentially be exploited by attackers. In addition, the mixed signal approximate computing model has different vulnerabilities than traditional digital implementations. However both the memristor and the ML computation can be leveraged to create security mechanisms and countermeasures ranging from lightweight cryptography, identifiers (e.g., Physically Unclonable Functions (PUFs), fingerprints, and watermarks), entropy sources, hardware obfuscation and leakage/attack detection methods. Three different threat models are proposed: (1) Supply Chain, (2) Physical Attacks, and (3) Remote Attacks. For each threat model, potential vulnerabilities and defenses are identified. This survey reviews a variety of recent work from the hardware and ML security literature and proposes open problems for both attack and defense. The survey emphasizes the growing area of RF signal analysis and identification in terms of commercial space, as well as military applications and threat models. We differ from other recent surveys that target ML, in general, neglecting RF applications. Full article
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<p>An example of a memristor array. This array shows the basics of a current summation model. The voltage inputs are multiplied against the conductances (<math display="inline"><semantics> <msub> <mi>G</mi> <mrow> <mi>i</mi> <mo>,</mo> <mi>j</mi> </mrow> </msub> </semantics></math>) of each device that generates current. The currents are then accumulated at each output.</p>
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<p>An example of a spectrum analyzer measuring signals, and an ML classifier developed to differentiate between transmitters sending a friendly signal and an adversarial signal based on inherent variation in transmitter properties. The green signal corresponds to a known transmitter, while the red signal corresponds to an adversarial transmitter attempting to impersonate the known transmitter. By utilizing RF fingerprinting techniques, the receiver can potentially differentiate between the two.</p>
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<p>Above is a list of areas in which an adversary could attack during the supply chain. In each step of the supply chain, an attack could occur in a different country or region with different laws and treaties, which increases the area of the attack surface. Note that these are just examples and do not refer to actual countries. (<b>a</b>) Given access to the original design specifications, the adversary could insert side channels to facilitate leakage of valuable information (Country A). (<b>b</b>) Third party products may come from untrustworthy sources, and could contain Trojans or other malicious hardware (Country B). (<b>c</b>) An adversary could produce counterfeit products or compromise the integrity of the chips (Country C). (<b>d</b>) A testing team could reverse engineer the NN model details (e.g., architecture, weights, etc.) by recording the inputs and outputs of the memristor array (Country D). (<b>e</b>) Distributor could illegally retain the chip and/or replace it with a counterfeit (Country E).</p>
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<p>A flow chart depicting the potential use of watermarking to detect imposter/ compromised classifiers. An RF signal (<b>a</b>) is received by an inference accelerator (<b>b</b>), which then performs a computation on the signal and sends its output. The output (<b>c</b>) is either stored or immediately forwarded to the second model. The output is received by a watermark extractor (<b>d</b>), which either detects watermarked information in the output (<b>e</b>) or detects the lack of a watermark (<b>f</b>) indicating a compromised device.</p>
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<p>A sample SoC (System on Chip) architecture, integrating RF receivers/transmitters, one or more memristive crossbars for analog signal processing, and a CMOS System to handle general computing. This system can be partitioned into a chiplet architecture, and then later integrated on a common silicon interposer that provides high-speed interconnects between the chiplets as well external interfaces, power delivery and potentially active circuits.</p>
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<p>The figure above shows two potential attacks against a chiplet type architecture: Die-swapping, and probing of the interconnections between chiplets.</p>
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14 pages, 2892 KiB  
Article
Directed Acyclic Graph-Based Datapath Synthesis Using Graph Isomorphism and Gate Reconfiguration
by Liuting Shang, Sheng Lu, Yichen Zhang, Sungyong Jung and Chenyun Pan
Chips 2024, 3(2), 182-195; https://doi.org/10.3390/chips3020008 - 4 Jun 2024
Viewed by 851
Abstract
Datapath synthesis is a crucial step in synthesis flow and aims at globally minimizing an area by identifying shareable logic structures. This paper introduces a novel Directed Acyclic Graph (DAG)-based datapath synthesis method based on graph isomorphism and gate reconfiguration. Unlike algorithms that [...] Read more.
Datapath synthesis is a crucial step in synthesis flow and aims at globally minimizing an area by identifying shareable logic structures. This paper introduces a novel Directed Acyclic Graph (DAG)-based datapath synthesis method based on graph isomorphism and gate reconfiguration. Unlike algorithms that identify common specification logic, our approach simplifies the problem by focusing on searching for common topology. Leveraging the concept of gate reconfiguration, our algorithm extends the applicability of DAG-based datapath synthesis by transforming a topology-equivalent network into a specification-equivalent network. Experimental results demonstrate up to 23.6% improvement when optimizing the adder–subtractor circuit, a scenario not addressed by existing DAG-based datapath synthesis algorithms. Full article
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<p>Three Boolean network representations for <math display="inline"><semantics> <mrow> <mi>f</mi> <mo>=</mo> <mfenced> <mrow> <mover accent="true"> <mi>a</mi> <mo>¯</mo> </mover> <mo>+</mo> <mi>b</mi> </mrow> </mfenced> <mo>×</mo> <mi>c</mi> <mo>+</mo> <mfenced> <mrow> <mi>a</mi> <mo>⊕</mo> <mi>b</mi> </mrow> </mfenced> <mo>×</mo> <mover accent="true"> <mi>c</mi> <mo>¯</mo> </mover> </mrow> </semantics></math>: (<b>a</b>) an AIG network, in which every node is the AND gate and the dotted line represents an inverter, (<b>b</b>) a network mapped with standard two-input logic gates, and (<b>c</b>) a network mapped with reconfigurable gates.</p>
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<p>(<b>a</b>) The original circuit with two logic cones, i.e., datapaths that are connected to the same MUX, and (<b>b</b>) the circuit that has been processed by the original datapath synthesis. This is the basic method to use graph isomorphism and it requires specification equivalence between logic cone 1 and logic cone 2.</p>
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<p>The existing approach of approximate pairing. The XOR gate in (<b>b</b>) is added to compensate for the inverter that only exists in the left cone in (<b>a</b>).</p>
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<p>An example showing the limits of the existing approximate pairing method. (<b>a</b>) A case that the specification difference reflects in the two-input logic gate, (<b>b</b>) a transformed implementation from (<b>a</b>), and (<b>c</b>) the implementation generated by datapath synthesis using existing approximate pairing.</p>
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<p>The novel approximate pairing scheme for leveraging gate-level reconfiguration. The colored gates mark the gates that are in the same topological position but with different operators.</p>
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<p>The example of creating a loop using reconfiguration-based approximate pairing. Assume all nodes in (<b>a</b>,<b>b</b>) are the AND gate except node 7, which is the OR gate; then, the common specification is generated as (<b>c</b>). The red circle marks the created loop.</p>
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<p>The example of removing inverter/wire combination using reconfiguration-based approximate pairing. (<b>a</b>) A circuit with an inverter difference between two datapaths, and (<b>b</b>) the solution that addresses the inverter difference by employing a reconfigurable gate.</p>
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<p>The partial structure of the benchmark circuit. Red components indicate the specification difference.</p>
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<p>Area of 64-bit ‘A+B:A−C’ generated by the five schemes with different areas overhead of gate-level reconfiguration.</p>
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<p>Area of ‘parity([A B]):A|C’ generated by the five schemes.</p>
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29 pages, 7625 KiB  
Review
A Review on Fundamentals of Noise-Shaping SAR ADCs and Design Considerations
by Victor H. Arzate-Palma, David G. Rivera-Orozco, Gerardo Molina Salgado and Federico Sandoval-Ibarra
Chips 2024, 3(2), 153-181; https://doi.org/10.3390/chips3020007 - 10 May 2024
Viewed by 1660
Abstract
A general overview of Noise-Shaping Successive Approximation Register (SAR) analog-to-digital converters is provided, encompassing the fundamentals, operational principles, and key architectures of Noise-Shaping SAR (NS SAR). Key challenges, including inherent errors in processing circuits, are examined, along with current advancements in architecture design. [...] Read more.
A general overview of Noise-Shaping Successive Approximation Register (SAR) analog-to-digital converters is provided, encompassing the fundamentals, operational principles, and key architectures of Noise-Shaping SAR (NS SAR). Key challenges, including inherent errors in processing circuits, are examined, along with current advancements in architecture design. Various issues, such as loop filter optimization, implementation methods, and DAC network element mismatches, are explored, along with considerations for voltage converter performance. The design of dynamic comparators is examined, highlighting their critical role in the SAR ADC architecture. Various architectures of dynamic comparators are extensively explored, including optimization techniques, performance considerations, and emerging trends. Finally, emerging trends and future challenges in the field are discussed. Full article
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<p>Types of ADCs comparative in terms of BW and resolution.</p>
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<p>Power consumption comparison in conventional A/D converter architectures and in NS-SARs.</p>
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<p>Traditional SAR ADC schematics.</p>
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<p>A 4-bit single-ended CDAC (<b>a</b>) and conventional comparator (<b>b</b>).</p>
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<p>Capacitive voltage divider in the first conversion cycle (<b>a</b>) and comparator-based switched amplifier (<b>b</b>).</p>
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<p>Four-bit CDAC sampling (<b>a</b>) top plate, (<b>b</b>) bottom plate, and (<b>c</b>) dynamic comparator.</p>
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<p>Full differential binary search algorithm in 4-bit CDAC.</p>
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<p>Differential conversion process of a 10-bit SAR ADC.</p>
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<p>Error Feedback NS SAR schematics.</p>
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<p>Cascade Integrator Feed-Forward NS SAR schematics.</p>
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<p>EF NS SAR ADC block diagram.</p>
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<p>CIFF NS SAR ADC block diagram.</p>
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<p>Representation of the value of <math display="inline"><semantics> <mi>α</mi> </semantics></math> in a unit circle.</p>
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<p>Active SC third-order implementation [<a href="#B21-chips-03-00007" class="html-bibr">21</a>].</p>
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<p>DA-based multi-input comparator.</p>
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<p>Capacitor stacking to double voltage.</p>
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<p>PSD without noise shaping.</p>
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<p>PSD with first-order noise shaping.</p>
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<p>Semilog chart of PSD with first-order noise shaping and 20 dB/dec slope.</p>
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<p>PSD with second-order noise shaping.</p>
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<p>PSD with third-order noise shaping.</p>
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<p>Linear and non-linear characteristics in A/D conversion.</p>
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<p>PSD with one mismatch in a first-order implementation EF.</p>
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<p>First-order MES. Sampling phase and LSBs reset stage.</p>
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<p>DEM process.</p>
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<p>Unit element selection using DWA algorithm.</p>
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<p>Block diagram of a NS SAR with the different error sources. The block L(z) that is added to the error, <math display="inline"><semantics> <msub> <mi>E</mi> <mi>D</mi> </msub> </semantics></math>(z), is intended to perform a noise shaping.</p>
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<p>StrongArm Latch.</p>
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<p>Double Tail Comparator.</p>
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<p>(<b>a</b>) Dynamic two-stage comparator and (<b>b</b>) dynamic bias comparator.</p>
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<p>(<b>a</b>) Floating inverter amplifier and (<b>b</b>) SA latch.</p>
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<p>Low-power dynamic comparator.</p>
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<p>NS SAR MASH 2-2 fourth-order without OTA [<a href="#B71-chips-03-00007" class="html-bibr">71</a>].</p>
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24 pages, 18551 KiB  
Article
A CMOS 12-Bit 3MS/s Rad-Hard Digital-to-Analog Converter Based on a High-Linearity Resistor String Poly-Matrix
by Cristiano Calligaro and Umberto Gatti
Chips 2024, 3(2), 129-152; https://doi.org/10.3390/chips3020006 - 8 May 2024
Cited by 1 | Viewed by 1419
Abstract
This work presents a rad-hard 12-bit 3 MS/s resistor string DAC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels starting from a conventional topology. The design considers the different effects of the radiation that [...] Read more.
This work presents a rad-hard 12-bit 3 MS/s resistor string DAC for space applications. The converter has been developed using rad-hardened techniques both at architecture and layout levels starting from a conventional topology. The design considers the different effects of the radiation that could damage the circuits in space environments. The DAC has been developed and integrated a standard CMOS 0.13 μm technology by IHP, using RHBD techniques. Low Earth Orbit (LEO) requires a TID value of around 100 krad (Si), according to the expected length of the mission. The temperature range is between −55 °C and 125 °C. The DAC power budget is similar to that of terrestrial applications. The measured INL (Integral Non-Linearity) and DNL (Differential Non-Linearity) are better than 0.2 LSB, while the ENOB (Effective Number Of Bits) at a 3 MS/s clock exceeds 9.7 bits while loading a 10 pF capacitor. The DAC has been characterized under radiation, showing a fluctuation in the analog output lower than 2 LSB (mainly due to measurement uncertainty) up to 500 krad (Si). Power consumption shows a negligible increase, too. A 10-bit version of the same DAC as the downscaled 12-bit one has been developed as well. Full article
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<p>Resistor string DAC (Kelvin divider for 3 bits).</p>
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<p>Matrix resistor string (folded resistor string for 4 bits).</p>
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<p>Schematic of the X-Y resistor matrix DAC [<a href="#B5-chips-03-00006" class="html-bibr">5</a>,<a href="#B25-chips-03-00006" class="html-bibr">25</a>].</p>
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<p>Complete block diagram of the full DAC.</p>
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<p>Monte Carlo simulations for process and mismatch variation (1000 runs): RCx = RFy = 61 ohm [<a href="#B5-chips-03-00006" class="html-bibr">5</a>].</p>
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<p>Straight layout (<b>a</b>) and folded layout (<b>b</b>) of a resistor string.</p>
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<p>Floorplan of the 12-bit DAC.</p>
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<p>Layout of the switch used as a coarse and fine selector in the DAC matrix [<a href="#B5-chips-03-00006" class="html-bibr">5</a>].</p>
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<p>Schematic of the opamp used as the DAC output buffer [<a href="#B5-chips-03-00006" class="html-bibr">5</a>] (all nMOS bodies are tied to the ground, the pMOS M1 and M2 bodies are tied to the source).</p>
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<p>Layout of the opamp input differential stage with a common centroid ELT.</p>
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<p>Layout of the 12-bit DAC macro.</p>
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<p>Chip photo (<b>a</b>) and packaged 12-bit DAC (<b>b</b>).</p>
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<p>Measured DNL (<b>a</b>) and INL (<b>b</b>) of the DAC.</p>
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<p>Measured spectrum of the buffered output when a 33 kHz 1.5 V<sub>pp</sub> sinewave with a clock of 1 MS/s is applied (ENOB = 10.8 Bit).</p>
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<p>Measured spectrum of the buffered output when a 100 kHz 1.5 V<sub>pp</sub> sinewave with a clock of 3 MS/s is applied (ENOB = 9.5 Bit).</p>
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<p>Measured IMD (IP3) when the buffered output of two tones with a clock of 1 MS/s is applied (IMD = 65 dBc).</p>
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<p>Layout (<b>a</b>) and chip photo (<b>b</b>) of the 10-bit DAC macro [<a href="#B5-chips-03-00006" class="html-bibr">5</a>].</p>
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<p>Detail of the Arduino 2 board plus a custom shield.</p>
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<p>Block diagram of the boards used for tests under irradiation.</p>
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<p>Photo of the complete system (MB + DB) for the DAC test of the TID.</p>
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<p>Photos of the IGS-3 gamma irradiator (<b>a</b>) and the “logical” split of environments and Hw connections (<b>b</b>).</p>
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<p>(<b>a</b>) Shielding box (with lead bricks) still open with the MB; (<b>b</b>) placement of the MB (protected) and DB (exposed).</p>
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<p>DNL-INL test block diagram.</p>
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<p>ADC output code as a function of radiation dose.</p>
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<p>DAC analog current consumption as a function of radiation dose for the half-range DAC.</p>
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<p>DAC analog current consumption as a function of radiation dose for three codes: 0, 2047, and 4095.</p>
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<p>Snapshot of the Leonida Platform.</p>
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31 pages, 1754 KiB  
Review
Slew-Rate Enhancement Techniques for Switched-Capacitors Fast-Settling Amplifiers: A Review
by Michele Dei, Francesco Gagliardi and Paolo Bruschi
Chips 2024, 3(2), 98-128; https://doi.org/10.3390/chips3020005 - 17 Apr 2024
Cited by 1 | Viewed by 1358
Abstract
This review is aimed at the integrated circuit design community and it explores slew-rate enhancement techniques for switched-capacitor amplifiers, with a primary focus on optimizing settling time within power constraints. Key challenges are addressed, including the selection between single-stage and two-stage amplifiers, along [...] Read more.
This review is aimed at the integrated circuit design community and it explores slew-rate enhancement techniques for switched-capacitor amplifiers, with a primary focus on optimizing settling time within power constraints. Key challenges are addressed, including the selection between single-stage and two-stage amplifiers, along with the utilization of advanced circuit-level techniques for slew-rate enhancement. Presently, there exists a gap in comprehensive discussion, with reliance primarily on two Figures of Merit aimed at assessing power efficiency under specific capacitive loads. However, these metrics fail to adequately assess the performance of the existing slew-rate enhancer solutions at different values of capacitive loads. As a consequence, the designer lacks clear guidelines in practical situations. This review provides a state-of-the art mapping under a figure of merit dedicated to assess the whole settling delay, and also introduces a novel performance metric which highlights the role of the circuital architectures, regardless of external operating conditions. By offering a thorough examination, this review seeks to steer future research in switched-capacitor amplifier design, thereby facilitating informed decision-making and fostering innovation in the field. Full article
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Figure 1
<p>Schematic diagram of an inverting fully-differential SC integrator. Nominally <math display="inline"><semantics> <mrow> <msub> <mi>C</mi> <mrow> <mn>1</mn> <mi>p</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mrow> <mn>1</mn> <mi>n</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mn>1</mn> </msub> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>C</mi> <mrow> <mn>2</mn> <mi>p</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mrow> <mn>2</mn> <mi>n</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mn>2</mn> </msub> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>C</mi> <mrow> <mn>3</mn> <mi>p</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mrow> <mn>3</mn> <mi>n</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>C</mi> <mn>3</mn> </msub> </mrow> </semantics></math>. Capacitors <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mn>3</mn> <mi>p</mi> </mrow> </msub> </semantics></math> and <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mn>3</mn> <mi>n</mi> </mrow> </msub> </semantics></math> represent the capacitive loads applied to the integrator. Phase <math display="inline"><semantics> <msub> <mi>ϕ</mi> <mi>reset</mi> </msub> </semantics></math> is used to establish the initial conditions of the integrator state variable. The differential input of the integrator is represented by <math display="inline"><semantics> <mrow> <msub> <mi>V</mi> <mrow> <mi>i</mi> <mi>p</mi> </mrow> </msub> <mo>−</mo> <msub> <mi>V</mi> <mrow> <mi>i</mi> <mi>n</mi> </mrow> </msub> </mrow> </semantics></math>, while the differential output is represented by <math display="inline"><semantics> <mrow> <msub> <mi>V</mi> <mrow> <mi>o</mi> <mi>p</mi> </mrow> </msub> <mo>−</mo> <msub> <mi>V</mi> <mrow> <mi>o</mi> <mi>n</mi> </mrow> </msub> </mrow> </semantics></math>. For simplicity, the output and the input common mode voltages are identical and equal to <math display="inline"><semantics> <msub> <mi>V</mi> <mrow> <mi>c</mi> <mi>m</mi> </mrow> </msub> </semantics></math>. In this configuration, the output is valid at the end of <math display="inline"><semantics> <msub> <mi>ϕ</mi> <mn>2</mn> </msub> </semantics></math>.</p>
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<p>Chronograph of the differential output voltage <math display="inline"><semantics> <mrow> <msub> <mi>V</mi> <mi>o</mi> </msub> <mrow> <mo>(</mo> <mi>t</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> [from (<a href="#FD3-chips-03-00005" class="html-disp-formula">3</a>)] the relative error <math display="inline"><semantics> <mrow> <msub> <mi>ϵ</mi> <mi>o</mi> </msub> <mrow> <mo>(</mo> <mi>t</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> [from (<a href="#FD7-chips-03-00005" class="html-disp-formula">7</a>)] for a small input step and for a large input.</p>
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<p>Schematic diagram of a fully-differential SC integrator during the settling phase. The capacitor <math display="inline"><semantics> <msub> <mi>C</mi> <mi>P</mi> </msub> </semantics></math> is associated to the OTA input device parasitic capacitance. The OTA has the idealized <math display="inline"><semantics> <mrow> <msub> <mi>I</mi> <mi>o</mi> </msub> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mi>i</mi> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math> characteristic shown in the inset plot. <math display="inline"><semantics> <msub> <mi>I</mi> <mi>o</mi> </msub> </semantics></math> represent the differential-mode current at the output of the OTA while <math display="inline"><semantics> <msub> <mi>V</mi> <mi>i</mi> </msub> </semantics></math> represent the differential voltage at the input of the OTA. This idealized characteristic is fully described by the set of the following three parameters: <math display="inline"><semantics> <mrow> <msub> <mi>G</mi> <mi>m</mi> </msub> <mo>,</mo> <msub> <mi>I</mi> <mrow> <mi>o</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> <mo>,</mo> <msub> <mi>V</mi> <mrow> <mi>d</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </mrow> </semantics></math>. <math display="inline"><semantics> <msub> <mi>I</mi> <mrow> <mi>s</mi> <mi>u</mi> <mi>p</mi> </mrow> </msub> </semantics></math> indicates the current drawn from the supply voltage.</p>
Full article ">Figure 4
<p>Numerical results for the settling-time model of Equation (<a href="#FD16-chips-03-00005" class="html-disp-formula">16</a>) with the following values: <math display="inline"><semantics> <msub> <mi>C</mi> <mn>1</mn> </msub> </semantics></math> = 4 pF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>2</mn> </msub> </semantics></math> = 32 pF, <math display="inline"><semantics> <msub> <mi>C</mi> <mn>3</mn> </msub> </semantics></math> = 1 pF, <math display="inline"><semantics> <msub> <mi>C</mi> <mi>P</mi> </msub> </semantics></math> = 0.2 pF, <math display="inline"><semantics> <msub> <mi>ϵ</mi> <mi>S</mi> </msub> </semantics></math> = 100 ppm, <math display="inline"><semantics> <msub> <mi>V</mi> <mrow> <mi>d</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </semantics></math> = 50 mV. Design case (A) features <math display="inline"><semantics> <msub> <mi>G</mi> <mi>m</mi> </msub> </semantics></math> = 1.33 mS, <math display="inline"><semantics> <msub> <mi>I</mi> <mrow> <mi>o</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </semantics></math> = 66.7 <math display="inline"><semantics> <mi mathvariant="sans-serif">μ</mi> </semantics></math>A, Design case (B) features <math display="inline"><semantics> <msub> <mi>G</mi> <mi>m</mi> </msub> </semantics></math> = 1.33 mS, <math display="inline"><semantics> <msub> <mi>I</mi> <mrow> <mi>o</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </semantics></math> = 266.7 <math display="inline"><semantics> <mi mathvariant="sans-serif">μ</mi> </semantics></math>A, Design case (C) features <math display="inline"><semantics> <msub> <mi>G</mi> <mi>m</mi> </msub> </semantics></math> = 2.67 mS, <math display="inline"><semantics> <msub> <mi>I</mi> <mrow> <mi>o</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> </semantics></math> = 133.3 <math display="inline"><semantics> <mi mathvariant="sans-serif">μ</mi> </semantics></math>A. Subplot (<b>a</b>) shows the <math display="inline"><semantics> <msub> <mi>t</mi> <mi>S</mi> </msub> </semantics></math>, <math display="inline"><semantics> <msub> <mi>t</mi> <mrow> <mi>l</mi> <mi>i</mi> <mi>n</mi> </mrow> </msub> </semantics></math> and <math display="inline"><semantics> <msub> <mi>t</mi> <mrow> <mi>s</mi> <mi>r</mi> </mrow> </msub> </semantics></math> behavour as function of <math display="inline"><semantics> <msub> <mi>V</mi> <mrow> <mi>i</mi> <mi>d</mi> </mrow> </msub> </semantics></math>. Subplot (<b>b</b>) shows the maximum <math display="inline"><semantics> <mrow> <mrow> <mo>|</mo> </mrow> <msub> <mi>V</mi> <mrow> <mi>i</mi> <mi>d</mi> </mrow> </msub> <mrow> <mo>|</mo> </mrow> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <msub> <mi>t</mi> <mi>S</mi> </msub> <mo>≤</mo> <msubsup> <mi>t</mi> <mrow> <mi>l</mi> <mi>i</mi> <mi>n</mi> </mrow> <mo>★</mo> </msubsup> </mrow> </semantics></math> as a function of the slew-rate enhancing ratio <math display="inline"><semantics> <mrow> <msub> <mi>I</mi> <mrow> <mi>o</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>G</mi> <mi>m</mi> </msub> <msub> <mi>V</mi> <mrow> <mi>d</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math>, where <math display="inline"><semantics> <msubsup> <mi>t</mi> <mrow> <mi>l</mi> <mi>i</mi> <mi>n</mi> </mrow> <mo>★</mo> </msubsup> </semantics></math> is defined as <math display="inline"><semantics> <mrow> <msubsup> <mi>t</mi> <mrow> <mi>l</mi> <mi>i</mi> <mi>n</mi> </mrow> <mo>★</mo> </msubsup> <mo>=</mo> <msub> <mi>t</mi> <mrow> <mi>l</mi> <mi>i</mi> <mi>n</mi> </mrow> </msub> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mrow> <mi>i</mi> <mi>d</mi> </mrow> </msub> <mo>=</mo> <msub> <mi>V</mi> <mrow> <mi>d</mi> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math>.</p>
Full article ">Figure 5
<p>Schematic diagrams of (<b>a</b>), a PMOS-input mirror OTA; (<b>b</b>), a two-stage Miller-compensated PMOS-input OTA.</p>
Full article ">Figure 6
<p>Simplified single-ended equivalent circuit of a two-stage amplifier with capacitive feedback.</p>
Full article ">Figure 7
<p>Mapping of state-of-the-art SC circuits: (<b>a</b>) <math display="inline"><semantics> <mrow> <mi>F</mi> <mi>O</mi> <mi>M</mi> <mi>S</mi> </mrow> </semantics></math> vs. <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mi>L</mi> <mi>E</mi> </mrow> </msub> </semantics></math>; (<b>b</b>) <math display="inline"><semantics> <mrow> <mi>F</mi> <mi>O</mi> <mi>M</mi> <mi>L</mi> </mrow> </semantics></math> vs. <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mi>L</mi> <mi>E</mi> </mrow> </msub> </semantics></math>. Reference pool: [<a href="#B15-chips-03-00005" class="html-bibr">15</a>,<a href="#B26-chips-03-00005" class="html-bibr">26</a>,<a href="#B30-chips-03-00005" class="html-bibr">30</a>,<a href="#B31-chips-03-00005" class="html-bibr">31</a>,<a href="#B32-chips-03-00005" class="html-bibr">32</a>,<a href="#B33-chips-03-00005" class="html-bibr">33</a>,<a href="#B34-chips-03-00005" class="html-bibr">34</a>,<a href="#B35-chips-03-00005" class="html-bibr">35</a>,<a href="#B36-chips-03-00005" class="html-bibr">36</a>,<a href="#B37-chips-03-00005" class="html-bibr">37</a>,<a href="#B38-chips-03-00005" class="html-bibr">38</a>,<a href="#B39-chips-03-00005" class="html-bibr">39</a>,<a href="#B40-chips-03-00005" class="html-bibr">40</a>,<a href="#B41-chips-03-00005" class="html-bibr">41</a>,<a href="#B42-chips-03-00005" class="html-bibr">42</a>,<a href="#B43-chips-03-00005" class="html-bibr">43</a>,<a href="#B44-chips-03-00005" class="html-bibr">44</a>,<a href="#B45-chips-03-00005" class="html-bibr">45</a>,<a href="#B46-chips-03-00005" class="html-bibr">46</a>,<a href="#B47-chips-03-00005" class="html-bibr">47</a>,<a href="#B48-chips-03-00005" class="html-bibr">48</a>,<a href="#B49-chips-03-00005" class="html-bibr">49</a>,<a href="#B50-chips-03-00005" class="html-bibr">50</a>,<a href="#B51-chips-03-00005" class="html-bibr">51</a>,<a href="#B52-chips-03-00005" class="html-bibr">52</a>,<a href="#B53-chips-03-00005" class="html-bibr">53</a>,<a href="#B54-chips-03-00005" class="html-bibr">54</a>,<a href="#B55-chips-03-00005" class="html-bibr">55</a>,<a href="#B56-chips-03-00005" class="html-bibr">56</a>,<a href="#B57-chips-03-00005" class="html-bibr">57</a>,<a href="#B58-chips-03-00005" class="html-bibr">58</a>,<a href="#B59-chips-03-00005" class="html-bibr">59</a>,<a href="#B60-chips-03-00005" class="html-bibr">60</a>,<a href="#B61-chips-03-00005" class="html-bibr">61</a>,<a href="#B62-chips-03-00005" class="html-bibr">62</a>,<a href="#B63-chips-03-00005" class="html-bibr">63</a>,<a href="#B64-chips-03-00005" class="html-bibr">64</a>,<a href="#B65-chips-03-00005" class="html-bibr">65</a>,<a href="#B66-chips-03-00005" class="html-bibr">66</a>,<a href="#B67-chips-03-00005" class="html-bibr">67</a>,<a href="#B68-chips-03-00005" class="html-bibr">68</a>,<a href="#B69-chips-03-00005" class="html-bibr">69</a>,<a href="#B70-chips-03-00005" class="html-bibr">70</a>,<a href="#B71-chips-03-00005" class="html-bibr">71</a>,<a href="#B72-chips-03-00005" class="html-bibr">72</a>,<a href="#B73-chips-03-00005" class="html-bibr">73</a>,<a href="#B74-chips-03-00005" class="html-bibr">74</a>,<a href="#B75-chips-03-00005" class="html-bibr">75</a>,<a href="#B76-chips-03-00005" class="html-bibr">76</a>,<a href="#B77-chips-03-00005" class="html-bibr">77</a>,<a href="#B78-chips-03-00005" class="html-bibr">78</a>,<a href="#B79-chips-03-00005" class="html-bibr">79</a>,<a href="#B80-chips-03-00005" class="html-bibr">80</a>,<a href="#B81-chips-03-00005" class="html-bibr">81</a>,<a href="#B82-chips-03-00005" class="html-bibr">82</a>,<a href="#B83-chips-03-00005" class="html-bibr">83</a>,<a href="#B84-chips-03-00005" class="html-bibr">84</a>].</p>
Full article ">Figure 8
<p>Mapping of state-of-the-art SC circuits: <math display="inline"><semantics> <mrow> <mi>F</mi> <mi>O</mi> <mi>M</mi> </mrow> </semantics></math> vs. <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mi>L</mi> <mi>E</mi> </mrow> </msub> </semantics></math>. References: [<a href="#B15-chips-03-00005" class="html-bibr">15</a>,<a href="#B26-chips-03-00005" class="html-bibr">26</a>,<a href="#B30-chips-03-00005" class="html-bibr">30</a>,<a href="#B32-chips-03-00005" class="html-bibr">32</a>,<a href="#B33-chips-03-00005" class="html-bibr">33</a>,<a href="#B36-chips-03-00005" class="html-bibr">36</a>,<a href="#B39-chips-03-00005" class="html-bibr">39</a>,<a href="#B40-chips-03-00005" class="html-bibr">40</a>,<a href="#B41-chips-03-00005" class="html-bibr">41</a>,<a href="#B42-chips-03-00005" class="html-bibr">42</a>,<a href="#B43-chips-03-00005" class="html-bibr">43</a>,<a href="#B45-chips-03-00005" class="html-bibr">45</a>,<a href="#B46-chips-03-00005" class="html-bibr">46</a>,<a href="#B47-chips-03-00005" class="html-bibr">47</a>,<a href="#B48-chips-03-00005" class="html-bibr">48</a>,<a href="#B49-chips-03-00005" class="html-bibr">49</a>,<a href="#B50-chips-03-00005" class="html-bibr">50</a>,<a href="#B51-chips-03-00005" class="html-bibr">51</a>,<a href="#B52-chips-03-00005" class="html-bibr">52</a>,<a href="#B54-chips-03-00005" class="html-bibr">54</a>,<a href="#B55-chips-03-00005" class="html-bibr">55</a>,<a href="#B60-chips-03-00005" class="html-bibr">60</a>,<a href="#B61-chips-03-00005" class="html-bibr">61</a>,<a href="#B62-chips-03-00005" class="html-bibr">62</a>,<a href="#B63-chips-03-00005" class="html-bibr">63</a>,<a href="#B65-chips-03-00005" class="html-bibr">65</a>,<a href="#B68-chips-03-00005" class="html-bibr">68</a>,<a href="#B69-chips-03-00005" class="html-bibr">69</a>,<a href="#B70-chips-03-00005" class="html-bibr">70</a>,<a href="#B74-chips-03-00005" class="html-bibr">74</a>,<a href="#B75-chips-03-00005" class="html-bibr">75</a>,<a href="#B76-chips-03-00005" class="html-bibr">76</a>,<a href="#B77-chips-03-00005" class="html-bibr">77</a>,<a href="#B78-chips-03-00005" class="html-bibr">78</a>,<a href="#B79-chips-03-00005" class="html-bibr">79</a>,<a href="#B80-chips-03-00005" class="html-bibr">80</a>,<a href="#B81-chips-03-00005" class="html-bibr">81</a>,<a href="#B83-chips-03-00005" class="html-bibr">83</a>].</p>
Full article ">Figure 9
<p>Mapping of state-of-the-art SC circuits: <math display="inline"><semantics> <mrow> <mi>F</mi> <mi>O</mi> <msup> <mi>M</mi> <mo>*</mo> </msup> </mrow> </semantics></math> vs. <math display="inline"><semantics> <msub> <mi>C</mi> <mrow> <mi>L</mi> <mi>E</mi> </mrow> </msub> </semantics></math>. References: [<a href="#B15-chips-03-00005" class="html-bibr">15</a>,<a href="#B26-chips-03-00005" class="html-bibr">26</a>,<a href="#B30-chips-03-00005" class="html-bibr">30</a>,<a href="#B33-chips-03-00005" class="html-bibr">33</a>,<a href="#B36-chips-03-00005" class="html-bibr">36</a>,<a href="#B39-chips-03-00005" class="html-bibr">39</a>,<a href="#B40-chips-03-00005" class="html-bibr">40</a>,<a href="#B41-chips-03-00005" class="html-bibr">41</a>,<a href="#B42-chips-03-00005" class="html-bibr">42</a>,<a href="#B43-chips-03-00005" class="html-bibr">43</a>,<a href="#B45-chips-03-00005" class="html-bibr">45</a>,<a href="#B47-chips-03-00005" class="html-bibr">47</a>,<a href="#B48-chips-03-00005" class="html-bibr">48</a>,<a href="#B49-chips-03-00005" class="html-bibr">49</a>,<a href="#B50-chips-03-00005" class="html-bibr">50</a>,<a href="#B51-chips-03-00005" class="html-bibr">51</a>,<a href="#B52-chips-03-00005" class="html-bibr">52</a>,<a href="#B54-chips-03-00005" class="html-bibr">54</a>,<a href="#B55-chips-03-00005" class="html-bibr">55</a>,<a href="#B60-chips-03-00005" class="html-bibr">60</a>,<a href="#B61-chips-03-00005" class="html-bibr">61</a>,<a href="#B62-chips-03-00005" class="html-bibr">62</a>,<a href="#B63-chips-03-00005" class="html-bibr">63</a>,<a href="#B65-chips-03-00005" class="html-bibr">65</a>,<a href="#B68-chips-03-00005" class="html-bibr">68</a>,<a href="#B69-chips-03-00005" class="html-bibr">69</a>,<a href="#B74-chips-03-00005" class="html-bibr">74</a>,<a href="#B75-chips-03-00005" class="html-bibr">75</a>,<a href="#B76-chips-03-00005" class="html-bibr">76</a>,<a href="#B77-chips-03-00005" class="html-bibr">77</a>,<a href="#B78-chips-03-00005" class="html-bibr">78</a>,<a href="#B79-chips-03-00005" class="html-bibr">79</a>,<a href="#B80-chips-03-00005" class="html-bibr">80</a>,<a href="#B81-chips-03-00005" class="html-bibr">81</a>,<a href="#B83-chips-03-00005" class="html-bibr">83</a>].</p>
Full article ">Figure 10
<p>Schematic diagram of the functional parts of a mirror-based OTA.</p>
Full article ">Figure 11
<p>Schematic diagrams of Flipped Voltage Follower employed as (<b>a</b>) current buffer loop for class-AB current biasing, (<b>b</b>) low-voltage current mirror.</p>
Full article ">Figure 12
<p>Schematic diagrams of: (<b>a</b>) transconductive core of the PMOS-input recycling folded cascode OTA, (<b>b</b>) transconductive core of the PMOS-input nested-mirror OTA.</p>
Full article ">Figure 13
<p>Schematic diagrams of non-linear current mirror configurations: (<b>a</b>) gate-series <math display="inline"><semantics> <mrow> <msub> <mi>V</mi> <mi>C</mi> </msub> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mn>1</mn> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math>; (<b>b</b>) same as previous but with constant <math display="inline"><semantics> <msub> <mi>V</mi> <mi>G</mi> </msub> </semantics></math>; (<b>c</b>) source-series <math display="inline"><semantics> <mrow> <msub> <mi>V</mi> <mi>C</mi> </msub> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mn>1</mn> </msub> <mo>)</mo> </mrow> </mrow> </semantics></math>; (<b>d</b>) trivial implementation of the previous by the means of a resistor; (<b>e</b>) body modulation at the input device.</p>
Full article ">Figure 14
<p>Schematic diagrams of differential non-linear currents mirrors: (<b>a</b>) structure based on local common-mode feedback circuit (LCMF) and (<b>b</b>) structure based on the non-linear source degeneration.</p>
Full article ">Figure 15
<p>Schematic diagrams of the compound body-biased MOSFET (CBBM): (<b>a</b>) basic structure and (<b>b</b>) small-signal circuits.</p>
Full article ">Figure 16
<p>Schematic diagrams of (<b>a</b>) OTA+PSRE configuration; (<b>b</b>) Implementation of a PSRE based on current mirrors, enhanced by the boost capacitor <math display="inline"><semantics> <msub> <mi>C</mi> <mi>B</mi> </msub> </semantics></math>; (<b>c</b>) Implementation of a class-B PSRE based on <math display="inline"><semantics> <mrow> <mi>R</mi> <mi>C</mi> </mrow> </semantics></math>-bias ties.</p>
Full article ">
29 pages, 27941 KiB  
Article
Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers
by Corina Cuntan, Caius Panoiu, Manuela Panoiu, Ioan Baciu and Sergiu Mezinescu
Chips 2024, 3(2), 69-97; https://doi.org/10.3390/chips3020004 - 1 Apr 2024
Viewed by 989
Abstract
Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an [...] Read more.
Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an amplifier in various connections. The user selects the generator’s parameters, the type of connection and its parameters, as well as the load circuit characteristics. The application can determine both the stage characteristics and the Bode characteristics. The amplifier’s stability zone, as well as its gain and phase, are determined based on these characteristics. An important advantage of this application is that the design of the amplifier stage can be created starting from some parameters that the amplifier can establish, from which the values of components can be determined. In order to validate the simulation results from the LabVIEW application, the specialized program Multisim was used, as well as experimental measurements using the Electronics Explorer Board. Both Multisim and Electronics Explorer Board can determine Bode characteristics. In both simulations and experimental amplifiers, the same schemes with the same transistor were used. The application can be used for educational purposes as well as to design an amplifier’s stage to achieve specific parameters. Full article
Show Figures

Figure 1

Figure 1
<p>An equivalent circuit of an amplifier stage using the quadrupole “h” parameters.</p>
Full article ">Figure 2
<p>Electronic scheme for common emitter connection.</p>
Full article ">Figure 3
<p>The equivalent scheme in dynamical regime for a common emitter connection.</p>
Full article ">Figure 4
<p>Electronic scheme for a common collector connection.</p>
Full article ">Figure 5
<p>The equivalent scheme in dynamical regime for a common collector connection.</p>
Full article ">Figure 6
<p>Electronic scheme for common base connection.</p>
Full article ">Figure 7
<p>The equivalent scheme in dynamical regime for a common base connection.</p>
Full article ">Figure 8
<p>Front panel for input/output parameters.</p>
Full article ">Figure 9
<p>Front panel for common emitter stage parameters.</p>
Full article ">Figure 10
<p>(<b>a</b>) Dynamic regime diagram CE, (<b>b</b>) Dynamic parameters CE.</p>
Full article ">Figure 11
<p>(<b>a</b>) Program implementation of computed parameters, (<b>b</b>) Subroutine EC1.</p>
Full article ">Figure 12
<p>Front panel for common collector stage parameters.</p>
Full article ">Figure 13
<p>(<b>a</b>) Dynamic regime diagram CC, (<b>b</b>) Dynamic parameters CC.</p>
Full article ">Figure 14
<p>(<b>a</b>) Program implementation of computed parameters, (<b>b</b>) Subroutine CC1.</p>
Full article ">Figure 15
<p>Front panel for common base stage parameters.</p>
Full article ">Figure 16
<p>(<b>a</b>) Dynamic regime diagram CB, (<b>b</b>) Dynamic parameters CB.</p>
Full article ">Figure 17
<p>(<b>a</b>) Program implementation of computed parameters, (<b>b</b>) Subroutine BC1.</p>
Full article ">Figure 18
<p>Bode diagram menu.</p>
Full article ">Figure 19
<p>Program implementation of Bode diagram menu.</p>
Full article ">Figure 20
<p>Bode diagram for line 8 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to ON, for 10 kHz frequency.</p>
Full article ">Figure 21
<p>Bode diagram for line 8 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to ON, for low cut frequency of 38.66 Hz.</p>
Full article ">Figure 22
<p>Bode diagram for line 8 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to ON, for high cut frequency of 3.29 MHz.</p>
Full article ">Figure 23
<p>Simulation results for common emitter connection with SW<sub>CEe1</sub> to ON, using Multisim.</p>
Full article ">Figure 24
<p>Measurement results for common emitter connection with SW<sub>CEe1</sub> to ON, using Electronic Explorer Board.</p>
Full article ">Figure 25
<p>Simulations and experimental results for common emitter connection with SW<sub>CEe1</sub> to ON.</p>
Full article ">Figure 26
<p>Bode diagram for line 4 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to OFF, for 10 kHz frequency.</p>
Full article ">Figure 27
<p>Bode diagram for line 4 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to OFF, for low cut frequency of 19.5 Hz.</p>
Full article ">Figure 28
<p>Bode diagram for line 4 from <a href="#chips-03-00004-t001" class="html-table">Table 1</a> with SW<sub>CEe1</sub> to OFF, for high cut frequency of 188.7 MHz.</p>
Full article ">Figure 29
<p>Simulations and experimental results for common emitter connection with SW<sub>CEe1</sub> to OFF.</p>
Full article ">Figure 30
<p>Bode diagram for line 5 from <a href="#chips-03-00004-t002" class="html-table">Table 2</a>, for 10 kHz frequency.</p>
Full article ">Figure 31
<p>Bode diagram for line 5 from <a href="#chips-03-00004-t002" class="html-table">Table 2</a>, for low cut pulsations of 98.85 Hz.</p>
Full article ">Figure 32
<p>Simulation results for common collector connection, using Multisim.</p>
Full article ">Figure 33
<p>Measurement results for common collector connection, using Electronic Explorer Board.</p>
Full article ">Figure 34
<p>Simulations and experimental results for common collector connection.</p>
Full article ">Figure 35
<p>Bode diagram for line 1 from <a href="#chips-03-00004-t003" class="html-table">Table 3</a>, for 10 kHz frequency.</p>
Full article ">Figure 36
<p>Bode diagram for line 1 from <a href="#chips-03-00004-t003" class="html-table">Table 3</a>, for low cut pulsations of 447.9 Hz.</p>
Full article ">Figure 37
<p>Bode diagram for line 1 from <a href="#chips-03-00004-t003" class="html-table">Table 3</a>, for high cut pulsations of 2.86 MHz.</p>
Full article ">Figure 38
<p>Simulation results for common base connection, using Multisim.</p>
Full article ">Figure 39
<p>Measurement results for common base connection, using Electronic Explorer Board.</p>
Full article ">Figure 40
<p>Simulations and experimental results for common base connection.</p>
Full article ">
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