Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films
<p>Schematic of the sputtering system.</p> "> Figure 2
<p>Deposition rates of the NiO films at various oxygen flow rates.</p> "> Figure 3
<p>SEM images of the surface morphology of NiO films deposited via RF sputtering on a glass substrate at oxygen flow rates of (<b>a</b>) 0, (<b>b</b>) 2, (<b>c</b>) 4, (<b>d</b>) 6, (<b>e</b>) 8, and (<b>f</b>) 10 sccm. (<b>g</b>) Section of 50 nm NiO thin film fabricated with oxygen flow rate of 0 sccm.</p> "> Figure 3 Cont.
<p>SEM images of the surface morphology of NiO films deposited via RF sputtering on a glass substrate at oxygen flow rates of (<b>a</b>) 0, (<b>b</b>) 2, (<b>c</b>) 4, (<b>d</b>) 6, (<b>e</b>) 8, and (<b>f</b>) 10 sccm. (<b>g</b>) Section of 50 nm NiO thin film fabricated with oxygen flow rate of 0 sccm.</p> "> Figure 4
<p>AFM images of the surface morphology of NiO films deposited via RF sputtering on a glass substrate at oxygen flow rates of (<b>a</b>) 0, (<b>b</b>) 2, (<b>c</b>) 4, (<b>d</b>) 6, (<b>e</b>) 8, and (<b>f</b>) 10 sccm.</p> "> Figure 5
<p>XRD patterns of the 50 nm NiO films on a glass substrate with different oxygen flow rates.</p> "> Figure 6
<p>Transmittance of NiO films on a glass substrate using different oxygen flow rates.</p> "> Figure 7
<p>Optical band gap energy E<sub>g</sub> of the NiO film at (<b>a</b>) 0 sccm and (<b>b</b>) 10 sccm.</p> "> Figure 8
<p>Residual stress of NiO film with different oxygen flow rates measured via GIXRD (measured point and fitted linear graph of epsilon vs. sin<sup>2</sup>psi).</p> "> Figure 9
<p>Electrical properties of the NiO films deposited with various oxygen flow rates.</p> "> Figure 10
<p>The electrical properties of NiO films processed via RTA system under Ar, O<sub>2</sub>, and N<sub>2</sub> atmospheres.</p> "> Figure 11
<p>Transmittance of NiO films processed via RTA under Ar, O<sub>2</sub>, and N<sub>2</sub> atmospheres.</p> "> Figure 12
<p>The optical bandgap energy of NiO films processed via RTA under Ar, O<sub>2</sub>, and N<sub>2</sub> atmospheres. (<b>a</b>) with 0 sccm under Ar atmosphere; (<b>b</b>) with 0 sccm under O<sub>2</sub> atmosphere; (<b>c</b>) with 0 sccm under N<sub>2</sub> atmosphere; (<b>d</b>) with 10 sccm under Ar atmosphere; (<b>e</b>) with 10 sccm under O<sub>2</sub> atmosphere; (<b>f</b>) with 10 sccm under N<sub>2</sub> atmosphere.</p> "> Figure 13
<p>SEM images of the NiO films at different oxygen flow rates after 300 °C RTA. (<b>a</b>) 0 sccm, Ar; (<b>b</b>) 4 sccm, Ar; (<b>c</b>) 8 sccm, Ar; (<b>d</b>) 0 sccm, O<sub>2</sub>; (<b>e</b>) 4 sccm, O<sub>2</sub>; (<b>f</b>) 8 sccm, O<sub>2</sub>; (<b>g</b>) 0 sccm, N<sub>2</sub>; (<b>h</b>) 4 sccm, N<sub>2</sub>, and (<b>i</b>) 8 sccm, N<sub>2</sub>.</p> "> Figure 13 Cont.
<p>SEM images of the NiO films at different oxygen flow rates after 300 °C RTA. (<b>a</b>) 0 sccm, Ar; (<b>b</b>) 4 sccm, Ar; (<b>c</b>) 8 sccm, Ar; (<b>d</b>) 0 sccm, O<sub>2</sub>; (<b>e</b>) 4 sccm, O<sub>2</sub>; (<b>f</b>) 8 sccm, O<sub>2</sub>; (<b>g</b>) 0 sccm, N<sub>2</sub>; (<b>h</b>) 4 sccm, N<sub>2</sub>, and (<b>i</b>) 8 sccm, N<sub>2</sub>.</p> "> Figure 14
<p>The XRD images of NiO films fabricated using 0, 4, and 8 sccm oxygen flow rates after RTA processes under Ar, N<sub>2</sub>, and O<sub>2</sub> atmospheres.</p> "> Figure 15
<p>(<b>a</b>) Peaks of as-fabricated NiO films deposited at 8 sccm oxygen flow rate obtained via XPS measurement (the Ni 2p and O 1s spectra of NiO films); (<b>b</b>) C 1s, as-fabricated; (<b>c</b>) Ni 2p, as-fabricated; (<b>d</b>) O 1s, as-fabricated; (<b>e</b>) Ni 2p, RTA: Ar; (<b>f</b>) O 1s, RTA: Ar; (<b>g</b>) Ni 2p, RTA: O<sub>2</sub>; (<b>h</b>) O 1s, RTA: O<sub>2</sub>; (<b>i</b>) Ni 2p, RTA: N<sub>2</sub>; (<b>j</b>) O 1s, RTA: N<sub>2</sub>.</p> "> Figure 15 Cont.
<p>(<b>a</b>) Peaks of as-fabricated NiO films deposited at 8 sccm oxygen flow rate obtained via XPS measurement (the Ni 2p and O 1s spectra of NiO films); (<b>b</b>) C 1s, as-fabricated; (<b>c</b>) Ni 2p, as-fabricated; (<b>d</b>) O 1s, as-fabricated; (<b>e</b>) Ni 2p, RTA: Ar; (<b>f</b>) O 1s, RTA: Ar; (<b>g</b>) Ni 2p, RTA: O<sub>2</sub>; (<b>h</b>) O 1s, RTA: O<sub>2</sub>; (<b>i</b>) Ni 2p, RTA: N<sub>2</sub>; (<b>j</b>) O 1s, RTA: N<sub>2</sub>.</p> ">
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. As-Fabricated NiO Films
3.2. NiO Film Annealed at 300 °C RTA under Ar, O2, and N2 Atmospheres
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Parameters | Conditions |
---|---|
Layer | NiO |
Target | NiO (2″Dia, 3N5, 99.95%) |
Substrate | Soda-lime glass |
Base pressure | 5 × 10−6 Torr |
Working pressure | 5 × 10−3 Torr |
Gas flow rates | Ar: 20 sccm O2: 0, 2, 4, 6, 8, 10 sccm |
Input power | 150 W (RF) |
Parameters | Conditions | ||
---|---|---|---|
Working pressure | 1 Torr | ||
Temperature | 300 °C | ||
Time | 1 min | ||
Atmosphere | Ar: 50 sccm | O2: 30 sccm | N2: 40 sccm |
Oxygen Flow Rate | Lattice Constant (Å) | 2θ (°C) |
---|---|---|
0 sccm | 4.179 | 43.26 |
2 sccm | 4.239 | 42.622 |
4 sccm | 4.2428 | 42.580 |
6 sccm | 4.2758 | 42.237 |
8 sccm | 4.2836 | 42.156 |
10 sccm | — | — |
Oxygen Flow Rate | Optical Band Gap Energy Eg | Strain ε |
---|---|---|
0 sccm | 3.69 eV | 0.269% |
2 sccm | 3.67 eV | 1.708% |
4 sccm | 3.66 eV | 1.780% |
6 sccm | 3.63 eV | 2.591% |
8 sccm | 3.61 eV | 2.778% |
10 sccm | 3.57 eV | — |
Oxygen Flow Rate | Residual Stress (MPa) |
---|---|
0 sccm | −951.5 ± 722.7 |
2 sccm | −1604.0 ± 170.1 |
4 sccm | −914.2 ± 199.4 |
6 sccm | −781.1 ± 293.6 |
8 sccm | −1076.8 ± 452.5 |
10 sccm | −857.2 ± 178.2 |
Oxygen Flow Rate | Carrier Concentration (cm−3) | |||||
---|---|---|---|---|---|---|
0 °C | 100 °C | 200 °C | 300 °C | 400 °C | 500 °C | |
0 sccm | 5.86 × 1013 | 6.59 × 1013 | 6.42 × 1013 | 5.30 × 1013 | 5.31 × 1013 | 5.82 × 1013 |
2 sccm | 7.08 × 1018 | 1.36 × 1018 | 6.82 × 1017 | 2.01 × 1018 | 8.64 × 1014 | 1.16 × 1014 |
4 sccm | 4.09 × 1020 | 1.64 × 1020 | 7.92 × 1019 | 2.59 × 1019 | 1.02 × 1016 | 6.11 × 1013 |
6 sccm | 2.14 × 1020 | 6.79 × 1019 | 3.51 × 1019 | 5.30 × 1018 | 5.51 × 1015 | 1.17 × 1014 |
8 sccm | 3.35 × 1020 | 5.84 × 1019 | 7.98 × 1019 | 3.49 × 1019 | 5.70 × 1017 | 3.37 × 1014 |
10 sccm | 4.37 × 1020 | 1.25 × 1020 | 6.46 × 1019 | 3.57 × 1019 | 2.41 × 1017 | 2.61 × 1014 |
Oxygen Flow Rate | Mobility (cm−3) | |||||
---|---|---|---|---|---|---|
0 °C | 100 °C | 200 °C | 300 °C | 400 °C | 500 °C | |
0 sccm | 407.32 | 421.36 | 451.63 | 417.2 | 439.86 | 407.89 |
2 sccm | 1.356 | 1.2087 | 1.3114 | 1.8221 | 96.42 | 307.89 |
4 sccm | 0.602 | 0.911 | 1.443 | 2.597 | 49.9 | 208 |
6 sccm | 0.206 | 0.246 | 0.249 | 0.711 | 31.611 | 92.09 |
8 sccm | 0.189 | 0.202 | 0.432 | 0.670 | 11.41 | 84 |
10 sccm | 0.306 | 0.271 | 0.410 | 0.477 | 20.702 | 74.24 |
Oxygen Flow Rate | Optical Band Gap (Eg) | ||
---|---|---|---|
Ar | O2 | N2 | |
0 sccm | 3.68 eV | 3.69 eV | 3.69 eV |
2 sccm | 3.77 eV | 3.76 eV | 3.74 eV |
4 sccm | 3.73 eV | 3.72 eV | 3.69 eV |
6 sccm | 3.69 eV | 3.70 eV | 3.69 eV |
8 sccm | 3.71 eV | 3.73 eV | 3.73 eV |
10 sccm | 3.68 eV | 3.72 eV | 3.69 eV |
Oxygen Flow Rate | Lattice Constant (Å) | 2θ (°) | ||||
---|---|---|---|---|---|---|
Ar | O2 | N2 | O2 | Ar | N2 | |
0 sccm | 4.1738 | 4.1684 | 4.1638 | 43.32 | 43.38 | 43.429 |
2 sccm | 4.2172 | 4.229 | 4.2388 | 42.852 | 42.728 | 42.624 |
4 sccm | 4.2342 | 4.247 | 4.2482 | 42.691 | 42.537 | 42.524 |
6 sccm | 4.1738 | 4.1684 | 4.1638 | 43.32 | 43.38 | 43.429 |
8 sccm | 4.2172 | 4.229 | 4.2388 | 42.852 | 42.728 | 42.624 |
10 sccm | 4.2342 | 4.247 | 4.2482 | 42.691 | 42.537 | 42.524 |
Oxygen Flow Rate | Strain ε | ||
---|---|---|---|
Ar | O2 | N2 | |
0 sccm | 0.1439% | 0.0144% | −0.096% |
4 sccm | 1.185% | 1.468% | 1.704% |
8 sccm | 1.593% | 1.900% | 1.929% |
Atmosphere | Atomic Compositions | |
---|---|---|
O1s | Ni2p | |
as-fabricated, 8 sccm | 41.7% | 25.98% |
Ar | 36.46% | 22.79% |
O2 | 38.25% | 25.18% |
N2 | 35.42% | 22.73% |
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Kim, H.; Kim, K.; Hong, J. Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films. Coatings 2023, 13, 1954. https://doi.org/10.3390/coatings13111954
Kim H, Kim K, Hong J. Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films. Coatings. 2023; 13(11):1954. https://doi.org/10.3390/coatings13111954
Chicago/Turabian StyleKim, Hyungmin, Kyunghwan Kim, and Jeongsoo Hong. 2023. "Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films" Coatings 13, no. 11: 1954. https://doi.org/10.3390/coatings13111954