Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process
<p>RF MEMS switch design: (<b>a</b>) Schematic diagram of the switch; (<b>b</b>) The cross-sectional view of the movable part; (<b>c</b>) Simulated ON state RF performances of the designed switch witch package; (<b>d</b>) Simulated OFF state RF performances of the designed switch with the package.</p> "> Figure 2
<p>Relationship between the duty ratio of the pulse and the deposition rate of electroplating. Electroplating condition: frequency is 1 kHz, current density is 0.5 A/dm<sup>2</sup>, temperature is 50 °C, flow rate is 20 L/min. The insets show the grain size at different duty ratios.</p> "> Figure 3
<p>Relationship between current density and deposition rate. Electroplating condition: frequency is 1 kHz, duty ratio is 50%, temperature is 50 °C, flow rate is 20 L/min. The insets are the electroplated gold surface at different current densities.</p> "> Figure 4
<p>Relationship between temperature and deposition rate. Electroplating condition: frequency is 1 kHz, duty ratio is 50%, current density is 0.5 A/dm<sup>2</sup>, flow rate is 20 L/min. The insets show the electroplated gold surface at different temperatures.</p> "> Figure 5
<p>The surface roughness of the electroplated gold tested by AFM.</p> "> Figure 6
<p>Profile scans of the released electroplated gold beam. The inset displays the released gold beam and profile scanning path.</p> "> Figure 7
<p>(<b>a</b>) SEM image of the fabricated switch. (<b>b</b>) SEM image of the switch with a hermetic package.</p> "> Figure 8
<p>An automatic testing system for pull-in voltage and lifetime test of the switch.</p> "> Figure 9
<p>Temperature effect on the pull-in voltage of the packaged switches.</p> "> Figure 10
<p>The pull-in voltage shift with the operation time at different temperatures.</p> "> Figure 11
<p>Electric field distribution of the switch under DC bias voltage.</p> "> Figure 12
<p>The lifetime of the switches at different temperatures.</p> "> Figure 13
<p>The insertion loss and isolation curves of the packaged switch measured at room temperature.</p> "> Figure 14
<p>The RF performance variation of the switches working at different temperature environments: (<b>a</b>) The insertion loss variation of three switch samples versus temperature @ 30 GHz; (<b>b</b>) The isolation variation of three switch samples versus temperature @ 30 GHz; (<b>c</b>) The insertion loss variation at different operation frequencies versus temperature; (<b>d</b>) The isolation variation at different operation frequencies versus temperature.</p> ">
Abstract
:1. Introduction
2. Switch Design
3. Fabrication
3.1. Optimization of Gold Electroplating Process
3.2. Characterization of the Optimized Electroplated Gold
4. Measurements and Discussion
4.1. Temperature Effect on Mechanical Performance
4.2. Temperature Effect on RF Performance
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameter | Value |
---|---|
GSG | 40/80/40 μm |
Beam thickness | 5 μm |
Beam spring size | 40 × 40 μm |
Beam electrode size | 100 × 160 μm |
Electrostatic gap | 1.8 μm |
Contact thickness | 0.5 μm |
Cavity depth of silicon cap | 100 μm |
Parameter | Value |
---|---|
Current density | 0.4~0.6 A/dm2 |
Temperature | 50 ± 5 °C |
Frequency | 1 kHz |
Duty ratio | 50% |
Flow rate | 10~30 L/min |
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Wang, L.; Jiang, L.; Ma, N.; Huang, X. Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process. Micromachines 2024, 15, 1085. https://doi.org/10.3390/mi15091085
Wang L, Jiang L, Ma N, Huang X. Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process. Micromachines. 2024; 15(9):1085. https://doi.org/10.3390/mi15091085
Chicago/Turabian StyleWang, Lifeng, Lili Jiang, Ning Ma, and Xiaodong Huang. 2024. "Temperature Effects in Packaged RF MEMS Switches with Optimized Gold Electroplating Process" Micromachines 15, no. 9: 1085. https://doi.org/10.3390/mi15091085