Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices
<p>The 14 nm SOI FinFET device structure: (<b>a</b>) 3D schematic of SOI FinFET; (<b>b</b>) cross-sections of SOI FinFET.</p> "> Figure 2
<p>Comparison of transfer characteristics of drain current for the SOI FinFET with the experimental data [<a href="#B5-micromachines-15-01026" class="html-bibr">5</a>].</p> "> Figure 3
<p>Degradation of device transfer characteristic curves after simulation of TID.</p> "> Figure 4
<p>Electron density and mobility at the bottom of the channel: (<b>a</b>) mobility; (<b>b</b>) density.</p> "> Figure 5
<p>Two-dimensional cross-sectional diagram: (<b>a</b>) mobility; (<b>b</b>) density of fin.</p> "> Figure 6
<p>Degradation of transfer characteristic curves of irradiated 1000 krad (SiO<sub>2</sub>) dose devices at different temperatures.</p> "> Figure 7
<p>Degradation of device parameters for irradiated 1000 krad (SiO<sub>2</sub>) dose devices at different temperatures: (<b>a</b>) threshold voltage; (<b>b</b>) off-state current; (<b>c</b>) open-state current.</p> "> Figure 8
<p>Transfer characteristic curves for different bias states: (<b>a</b>) TG state; (<b>b</b>) OFF state; (<b>c</b>) ON state; (<b>d</b>) NULL state.</p> "> Figure 9
<p>Degradation of electrical characteristic parameters in four bias states: (<b>a</b>) off-state current; (<b>b</b>) subthreshold swing; (<b>c</b>) threshold voltage.</p> "> Figure 10
<p>Irradiation-induced charge generation rates in the buried oxygen layer of devices in four different transport states at irradiation doses up to 1000 krad (SiO<sub>2</sub>).</p> "> Figure 11
<p>Comparison of transfer characteristic curve degradation of simulated hot carrier effect devices.</p> "> Figure 12
<p>Parameter degradation of the simulated hot carrier effect device at different temperatures: (<b>a</b>) threshold voltage; (<b>b</b>) drain saturation current.</p> "> Figure 13
<p>Degradation of device (<b>a</b>) transfer characteristic curve and (<b>b</b>) output characteristic curve after simulating TID and then HCI.</p> "> Figure 14
<p>Trap charge inside the device: (<b>a</b>) trap charge in the buried oxygen layer at total irradiation dose of 1 Mrad/s(SiO<sub>2</sub>); (<b>b</b>) gate oxide interface state trap charge when stress time is 10<sup>6</sup> s.</p> "> Figure 15
<p>Degradation of device transfer characteristic curve after simulating TID and then HCI.</p> "> Figure 16
<p>Degradation of the device transfer characteristic curve of the simulated coupling effect under different bias states.</p> "> Figure 17
<p>(<b>a</b>) Trap charge inside the device in the buried oxygen layer; (<b>b</b>) trap charge concentration in the buried oxygen layer under different bias states.</p> ">
Abstract
:1. Introduction
2. Device Simulation Modeling
3. TID and HCI Simulation
3.1. TID
3.1.1. Mechanism and Physical Model of Action of TID
3.1.2. Simulation of TID
3.1.3. Influence of Temperature on TID
3.1.4. Influence of Different Bias States on TID
3.2. HCI
3.2.1. Mechanism and Physical Model of Action of HCI
3.2.2. Simulation of HCI
3.2.3. Influence of Temperature on HCI
4. Coupling Effect of TID and HCI Simulation
4.1. HCI after TID
4.2. TID after HCI
4.3. Influence of Different Bias States on Coupling Effect
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameter | Data |
---|---|
Gate length (nm) | 20 |
Channel width (nm) | 10 |
Channel length (nm) | 26 |
Gate oxide thickness (nm) | 0.9 |
Buried oxide thickness (Tbox, nm) | 50 |
Buried oxide length (nm) | 140 |
Source/drain extension length (nm) | 10 |
Source/drain length (nm) | 50 |
Source/drain width (nm) | 40 |
Channel doping (cm−3) | 1.0 × 1015 |
Source/drain doping (cm−3) | 4.5 × 1019 |
Gate work function (eV) | 4.38 |
Dose (krad (SiO2)) | ∆Vth/Vth (%) | Ioff-Post/Ioff-Pre | ∆SS/SS (%) |
---|---|---|---|
0 | 0 | 1 | 0 |
100 | −1.65 | 1.13 | 1.15 |
200 | −3.73 | 1.38 | 2.51 |
300 | −5.08 | 1.77 | 4.41 |
500 | −7.51 | 3.19 | 10.3 |
700 | −9.35 | 5.71 | 18.6 |
1000 | −11.63 | 12.78 | 37.7 |
Stress Time (s) | ∆Vth/Vth (%) | Ioff-Post/Ioff-Pre | ∆SS/SS (%) |
---|---|---|---|
0 | 0 | 0 | 0 |
103 | 6.66 | −2.81 | −0.13 |
104 | 10.74 | −4.62 | −0.40 |
105 | 13.74 | −5.85 | −2.27 |
106 | 15.07 | −6.33 | −2.67 |
∆Vth/Vth (%) | Ioff-Post/Ioff-Pre | ∆SS/SS (%) | ∆Idsat/Idsat (%) | |
---|---|---|---|---|
Fresh | 0 | 1 | 0 | 0 |
TID (1000 krad (SiO2)) | −11.6 | 12.8 | 37.7 | 8.9 |
HCI (1000 s) | −7.7 | 7.9 | 33.6 | 2.9 |
HCI (104 s) | −1.2 | 4.2 | 28.5 | 0.2 |
HCI (105 s) | 3 | 2.1 | 22.9 | −1.7 |
HCI (106 s) | 4.3 | 1.4 | 20.0 | −2.5 |
∆Vth/Vth (%) | Ioff-Post/Ioff-Pre | ∆SS/SS (%) | ∆Idsat/Idsat (%) | |
---|---|---|---|---|
Fresh | 0 | 1 | 0 | 0 |
HCI (106 s) | 15 | 0.47 | −2.7 | −6.2 |
TID (100 krad (SiO2)) | 14.2 | 0.48 | −2.1 | −5.4 |
TID (500 krad (SiO2)) | 7.3 | 1.64 | 6.9 | −1 |
TID (1000 krad (SiO2)) | 2.6 | 8.2 | 31.5 | 2.1 |
∆Vth/Vth (%) | ∆Idsat/Idsat (%) | Ioff-Post/Ioff-Pre | ∆SS/SS (%) | |
---|---|---|---|---|
HCI after TID | 4.3 | −2.5 | 1.4 | 20 |
TID after HCI | 2.6 | 2.1 | 8.2 | 31.5 |
Threshold Voltage (V) | ∆Vth/Vth (%) | |
---|---|---|
Fresh | 0.233 | 0.0 |
HCI (106 s) | 0.268 | 15.0 |
TID (OFF) | 0.240 | 3.0 |
TID (TG) | 0.239 | 2.6 |
TID (ON) | 0.259 | 11.1 |
TID (NULL) | 0.252 | 8.1 |
Drain Saturation Current (A) | ∆Idsat/Idsat (%) | Off-State Current (A) | Ioff-Post/ Ioff-Pre | |
---|---|---|---|---|
Fresh | 4.85 × 10−5 | 0.0 | 7.20 × 10−9 | 1.0 |
HCI (106 s) | 4.54 × 10−5 | −6.2 | 3.40 × 10−9 | 0.5 |
TID (OFF) | 4.95 × 10−5 | 2.1 | 5.44 × 10−8 | 7.6 |
TID (TG) | 4.94 × 10−5 | 2.1 | 5.85 × 10−8 | 8.2 |
TID (ON) | 4.68 × 10−5 | −3.5 | 4.83 × 10−9 | 0.7 |
TID (NULL) | 4.77 × 10−5 | −1.6 | 9.26 × 10−9 | 1.3 |
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Yu, H.; Zhou, W.; Liu, H.; Wang, S.; Chen, S.; Liu, C. Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices. Micromachines 2024, 15, 1026. https://doi.org/10.3390/mi15081026
Yu H, Zhou W, Liu H, Wang S, Chen S, Liu C. Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices. Micromachines. 2024; 15(8):1026. https://doi.org/10.3390/mi15081026
Chicago/Turabian StyleYu, Hao, Wei Zhou, Hongxia Liu, Shulong Wang, Shupeng Chen, and Chang Liu. 2024. "Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices" Micromachines 15, no. 8: 1026. https://doi.org/10.3390/mi15081026